JP5027992B2 - 高周波用途のためのガラス材料 - Google Patents
高周波用途のためのガラス材料 Download PDFInfo
- Publication number
- JP5027992B2 JP5027992B2 JP2004508402A JP2004508402A JP5027992B2 JP 5027992 B2 JP5027992 B2 JP 5027992B2 JP 2004508402 A JP2004508402 A JP 2004508402A JP 2004508402 A JP2004508402 A JP 2004508402A JP 5027992 B2 JP5027992 B2 JP 5027992B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- glass
- substrate
- conductor
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011521 glass Substances 0.000 title claims description 230
- 239000000463 material Substances 0.000 title claims description 79
- 239000004020 conductor Substances 0.000 claims description 183
- 239000000758 substrate Substances 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 74
- 238000000576 coating method Methods 0.000 claims description 43
- 239000011248 coating agent Substances 0.000 claims description 42
- 238000007740 vapor deposition Methods 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 7
- 239000003513 alkali Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 2
- 238000000869 ion-assisted deposition Methods 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 202
- 230000008569 process Effects 0.000 description 22
- 238000012360 testing method Methods 0.000 description 15
- 239000011247 coating layer Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000005352 borofloat Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000011231 conductive filler Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002650 laminated plastic Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31616—Deposition of Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
- H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/003—Coplanar lines
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/467—Adding a circuit layer by thin film methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/355—Temporary coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
- H01L2924/19033—Structure including wave guides being a coplanar line type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Glass Compositions (AREA)
- Inorganic Insulating Materials (AREA)
- Laminated Bodies (AREA)
Description
組成 組成範囲
SiO2 40〜90
B2O3 10〜40
Al2O3 0〜5
K2O 0〜5
Li2O 0〜3
Na2O 0〜3
上記数値は重量百分率である。
組成 組成範囲
SiO2 60〜90
B2O3 10〜30
Al2O3 0〜3
K2O 0〜3
Li2O 0〜2
Na2O 0〜2
組成 ガラス1 ガラス2
SiO2 84±5 71±5
B2O3 11±5 26±5
Na2O 2±0.2 0.5±0.2
Li2O 0・3±0.2 0.5±0.2
K2O 0.3±0.2 1.0±0.2
Al2O3 0.5±0.2 1.0±0.2
20℃〜300℃の熱膨張係数:α20〜300=3.2×10−6/K
屈折率: nd=1.465
転移温度: Tg=466℃
軟化点: TEW=742℃
動作点: TVA=1207℃
40GHzでの相対誘電率: εR=3.9
40GHzでの損失係数: tanδ=26×10−4
密度: ρ=2.12g/cm3
耐水性クラス: 2
耐酸性クラス: 2
耐アルカリ性クラス: 3
この特に適したガラスを以下ではガラスG018−189とも呼ぶ。
20℃〜300℃の熱膨張係数:α20〜300=2.75×10−6/K
屈折率: nd=1.47
転移温度: Tg=562℃
40GHzでの相対誘電率: εR=5
40GHzでの損失係数: tanδ=40×10−6
密度: ρ=2.2g/cm3
耐水性クラス: 1
耐酸性クラス: 1
耐アルカリ性クラス: 2
同様に特に適したこのガラスを以下ではガラス8329とも呼ぶ。
図15〜17はガラス8329を用いた埋め込み共平面導波路の測定値を示す。
2 半導体ウェハ
3 1の第1側
4、41、42 導体構成
5 1の第2側
6 1の上の導電構造物を有する層
61〜64 6の導体構造体
71〜74 コンタクト−コネクション領域
8 コンタクト−コネクション領域71〜74の9の開口部
9、91〜93 蒸着コーディングガラス層
10 構成要素
11 導体構造物を有する層
100、111、112、113 導体構造体
13 最終的な蒸着コーディングガラス層
14 蒸着コーディングガラスの封止層
15 バイア
17 溶着ビード
19 導電性材料
21 中間層のレジスト構造体
23 受動電気構成要素
25 導電層
27 フォトリソグラフィで構造化可能な中間層
29 分離軸線
31 可塑性カバー
33 能動半導体領域
35 33の接続場所
37 1を貫通するバイア
39 受動層
43 37の導電性充填物
75、76 コンタクト−コネクション領域
90 レジスト構造体上の蒸着コーティングガラス層の領域
Claims (27)
- 高周波基板又は高周波導電体構成用の絶縁層(9、91、92、93、13)であって、重量百分率で以下の組成:
SiO2 71±5、
B2O3 26±5、
Al2O3 1±0.2、
K2O 1±0.2、
Li2O 0.5±0.2、
Na2O 0.5±0.2
を有するガラス材料を含み、該ガラス材料は、該ガラス材料を蒸着して堆積させる蒸着コーティングによって堆積させられ、且つ1GHzを超える少なくともある周波数範囲において70×10−4以下の損失係数tanδを有する高周波基板又は高周波導体構成用の絶縁層(9、91、92、93、13)。 - 請求項1に記載の高周波基板または高周波導体構成用の絶縁層(9、91、92、93、13)において、0.05μm〜5mmの範囲の層厚を有する絶縁層。
- 40GHzの範囲の周波数において50×10−4以下の損失係数tanδを有するか、又は40GHzの周波数において30×10−4以下の損失係数tanδを有する請求項1又は2の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 1,300℃より低い動作点を有する請求項1乃至3の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 1GHzを超える少なくともある周波数範囲において5以下の相対誘電率δεRを有するか、又は40GHzの周波数において、5以下の相対誘電率εRを有する請求項1乃至4の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 20℃〜300℃の温度範囲において2.9×10−6/K〜3.5×10−6/Kの範囲でα20〜300の熱膨張係数を有する請求項1乃至5の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 絶縁層が基板材料の熱膨張係数とは20℃〜300℃の温度範囲において1×10−6/K未満だけ異なる熱膨張係数を有する、基板材料に塗布される請求項1乃至6の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 耐酸性クラス2までの耐酸性を有するか、又は耐アルカリ性クラス3までの耐アルカリ性を有する請求項1乃至7の何れか1項に記載の絶縁層(9、91、92、93、13)。
- 高周波導体構成(4、41、42)を有する構成要素(10)を形成する方法であって、
構造化されたガラス層(9、91、92、93、13)を堆積させる工程と、
コンタクト−コネクション領域(71〜74)と電気的に接触する、少なくとも1つの導体構造体(100、111、112、113)を前記ガラス層(9、91、92、93)に塗布する工程とから構成され、
ガラス材料は、重量百分率で以下の組成:
SiO 2 71±5、
B 2 O 3 26±5、
Al 2 O 3 1±0.2、
K 2 O 1±0.2、
Li 2 O 0.5±0.2、
Na 2 O 0.5±0.2
を有し、該ガラス層がガラス材料の蒸着によって堆積される方法。 - 前記少なくとも1つの導体構造体と接触する少なくとも1つの受動電気構成要素が、前記ガラス層(9、91、92、93)に塗布される請求項9に記載の方法。
- 1つの構造化されたガラス層を堆積させる工程と該少なくとも1つの導体構造体(111、112、113)を塗布する工程が複数回実行されることにより、該導体構造体(111、112、113)のうちの少なくとも2つのうちの1つがより先の段階で塗布され、該導体構造体(111、112、113)のうちの少なくとも2つのうちの他の1つがより後の段階で塗布されるように、該導体構造体(111、112、113)のうちの少なくとも2つが塗布され、後の段階で塗布された該他の導体構造体を該先の段階で塗布された該1つの導体構造体のコンタクト−コネクション領域に接触させた状態で、該他の導体構造体が堆積させられる請求項9乃至10の何れか1項に記載の方法。
- 請求項9乃至11の何れか1項に記載の方法において、少なくとも1つの開口部(8)を有する構造化されたガラス層(9、91、92、93、13)を蒸着コーティングによってコンタクト−コネクション領域(71〜74)の上に堆積させる工程を含み、該堆積させる工程が、
前記コンタクト−コネクション領域を被覆する構造化された中間層(21)を塗布する工程と、
蒸着コーティングによって前記基板および該基板上に存在する前記中間層(21)にガラス層(9、91、92、93、13)を塗布する工程とを含み、該方法は、さらに、
前記構造化された中間層(21)を除去する工程を含み、それにより、前記構造化された中間層(21)上に位置する前記ガラス層(9、91、92、93、13)のそれら領域(90)が該構造化された中間層(21)によって持ち上げられた状態となっている方法。 - 蒸着コーティングによって前記ガラス層(9、91、92、93、13)を塗布する前に、前記コンタクト−コネクション領域に隣接する領域に対して突出する導電性材料(19)が、前記少なくとも1つのコンタクト−コネクション領域(71〜74)に塗布され、且つこの材料(19)が前記構造化された中間層(21)によって被覆され、前記構造化された中間層(21)が印刷又はフォトリソグラフィ構造化によって形成される請求項12に記載の方法。
- 導体構造体の塗布が、少なくとも凹状に構造化された中間層を塗布する工程及び導電性材料を堆積させる工程を含んだ請求項9乃至13の何れか1項に記載の方法。
- 構造化されたガラス層(9、91、92、93、13)を堆積させる工程の前に、少なくとも1つの導体構造体、特に相互接続が前記基板に塗布される請求項9乃至14の何れか1項に記載の方法。
- 重量百分率で以下の組成:
SiO2 71±5、
B2O3 26±5、
Al2O3 1±0.2、
K2O 1±0.2、
Li2O 0.5±0.2、
Na2O 0.5±0.2
を有するガラス材料を用いて最終ガラス層(13)を堆積し、且つ該最終ガラス層(13)に少なくとも1つのバイア(15)を形成する工程を含む請求項9乃至15の何れか1項に記載の方法。 - 前記基板(1)が能動半導体領域(33)を有する半導体基板を含み、前記少なくとも1つの導体構造体(100、111、112、113)が、それが塗布されている間に、前記能動半導体領域(33)の接続場所(35)に電気的に接続される請求項9乃至16の何れか1項に記載の方法。
- 前記少なくとも1つの導体構造体(100、111、112、113)が、それが塗布されている間に前記基板(1)を通るバイア(37)に接続される請求項9乃至17の何れか1項に記載の方法。
- 蒸着コーティングによって前記ガラス層(9、91、92、93、13)を塗布する間に、前記基板(1)が50℃〜200℃に保たれる請求項9に記載の方法。
- 前記ガラス層(9、91、92、93)が、1分当たり少なくとも0.1μmの層厚の堆積速度の蒸着コーティングによって塗布される請求項9乃至19の何れか1項に記載の方法。
- 前記ガラス層(9、91、92、93、13)内の前記少なくとも1つの開口部(8)が導電性材料(19)で充填される請求項9乃至20の何れか1項に記載の方法。
- 前記基板(1)がまだウェハに接合されている間に被覆される請求項9乃至21の何れか1項に記載の方法。
- 蒸着コーティングによるガラス層(9、91、92、93、13)の塗布がプラズマ・イオン支援堆積法(PIAD)によって行われる請求項9に記載の方法。
- 高周波導体構成(4、41、42)を有する構成要素(10)であって、
少なくとも1つのコンタクト−コネクション領域(71〜74)を有する基板(1)と、
前記基板(1)の少なくとも一方の側(3、5)上にあって、バイアを有する少なくとも1つの開口部(8)を備えたガラス層であり、該ガラス層はガラス材料を蒸着して堆積させる蒸着コーティングによって堆積され、且つ該バイアは前記コンタクト−コネクション領域(71〜74)と電気的に接触するガラス層とを含み、該ガラス材料は、重量百分率で以下の組成:
SiO 2 71±5、
B 2 O 3 26±5、
Al 2 O 3 1±0.2、
K 2 O 1±0.2、
Li 2 O 0.5±0.2、
Na 2 O 0.5±0.2
を有し、
前記バイアと接触する、前記ガラス層(9、91、92、93)上の少なくとも1つの導体構造体(100、111、112、113)とを備えた構成要素(10)。 - 前記少なくとも1つの導体構造体(100、111、112、113)に接続された少なくとも1つの受動電気構成要素(23)を前記ガラス層(9、91、92、93、13)上に含む請求項24に記載の構成要素。
- 蒸着コーティングによって塗布され、かつ各々該ガラス層に塗布された導体構造体(100、111、112、113)を含む少なくとも2つのガラス層(9、91、92、93、13)を有する多層導体構成(4、41、42)を備え、第1のガラス層上の導体構造体がバイア(15)を介して第2のガラス層上の導体構造体と電気的に接触する請求項24又は25の何れか1項に記載の構成要素。
- 前記基板(1)が、前記基板(1)の第1の側(3)上に、前記導体構造体に接続された少なくとも1つの能動半導体領域(33)を有する半導体基板を含む請求項24乃至26の何れか1項に記載の構成要素。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10222609A DE10222609B4 (de) | 2002-04-15 | 2002-05-23 | Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat |
DE10222609.1 | 2002-05-23 | ||
PCT/EP2003/003907 WO2003088347A2 (de) | 2002-04-15 | 2003-04-15 | Verfahren zum verbinden von substraten und verbundelement |
EPPCT/EP03/03907 | 2003-04-15 | ||
PCT/EP2003/005414 WO2003100846A2 (de) | 2002-05-23 | 2003-05-23 | Glasmaterial für hochfrequenzanwendungen |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010086382A Division JP2010153927A (ja) | 2002-05-23 | 2010-04-02 | 高周波用途のためのガラス材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006513558A JP2006513558A (ja) | 2006-04-20 |
JP5027992B2 true JP5027992B2 (ja) | 2012-09-19 |
Family
ID=31983847
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004508410A Withdrawn JP2005535108A (ja) | 2002-05-23 | 2003-05-23 | 高周波用途に適した導体構成を有する構成要素を製造する方法 |
JP2004508402A Expired - Lifetime JP5027992B2 (ja) | 2002-05-23 | 2003-05-23 | 高周波用途のためのガラス材料 |
JP2010086382A Pending JP2010153927A (ja) | 2002-05-23 | 2010-04-02 | 高周波用途のためのガラス材料 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004508410A Withdrawn JP2005535108A (ja) | 2002-05-23 | 2003-05-23 | 高周波用途に適した導体構成を有する構成要素を製造する方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010086382A Pending JP2010153927A (ja) | 2002-05-23 | 2010-04-02 | 高周波用途のためのガラス材料 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8273671B2 (ja) |
EP (1) | EP1506578A2 (ja) |
JP (3) | JP2005535108A (ja) |
CN (1) | CN1656612A (ja) |
AU (1) | AU2003247287A1 (ja) |
WO (1) | WO2003100846A2 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL165282A0 (en) | 2002-05-23 | 2005-12-18 | Schott Ag | Method for producing a component comprising a conductor structure that issuitable for use at high frequencies |
US20040061232A1 (en) | 2002-09-27 | 2004-04-01 | Medtronic Minimed, Inc. | Multilayer substrate |
US8003513B2 (en) | 2002-09-27 | 2011-08-23 | Medtronic Minimed, Inc. | Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures |
DE102007016659B8 (de) * | 2007-04-04 | 2015-12-03 | Tricumed Medizintechnik Gmbh | Infusionspumpe, Kanalplatte für eine Infusionspumpe und Verfahren zu ihrer Herstellung |
DE102008034372B4 (de) | 2008-07-23 | 2013-04-18 | Msg Lithoglas Ag | Verfahren zum Herstellen einer dielektrischen Schicht in einem elektroakustischen Bauelement sowie elektroakustisches Bauelement |
DE102008044938B4 (de) | 2008-08-29 | 2013-10-10 | Schott Ag | Verfahren zur Terminierung von lichtleitenden Faserbündeln sowie Hülse mit einem Faserbündel |
DE102008037613A1 (de) * | 2008-11-28 | 2010-06-02 | Schott Solar Ag | Verfahren zur Herstellung eines Metallkontakts |
CN102427890A (zh) * | 2009-03-26 | 2012-04-25 | Ntnu技术转让公司 | 具有导电过孔的晶片键合的cmut阵列 |
DE102009002662B4 (de) | 2009-04-27 | 2022-11-24 | Ifm Electronic Gmbh | Kapazitiver Drucksensor als Kombinationssensor zur Erfassung weiterer Messgrößen |
DE102009034532A1 (de) * | 2009-07-23 | 2011-02-03 | Msg Lithoglas Ag | Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat |
CN104380432A (zh) * | 2012-03-30 | 2015-02-25 | Msg里松格莱斯股份公司 | 半导体器件和用于制造类玻璃层的方法 |
US9673131B2 (en) | 2013-04-09 | 2017-06-06 | Intel Corporation | Integrated circuit package assemblies including a glass solder mask layer |
JP6447075B2 (ja) * | 2014-12-10 | 2019-01-09 | 凸版印刷株式会社 | 配線基板、半導体装置及び半導体装置の製造方法 |
JP6832630B2 (ja) * | 2016-03-28 | 2021-02-24 | 富士通インターコネクトテクノロジーズ株式会社 | 配線基板の製造方法 |
WO2018051793A1 (ja) | 2016-09-13 | 2018-03-22 | 旭硝子株式会社 | 高周波デバイス用ガラス基板と高周波デバイス用回路基板 |
RU2701611C1 (ru) * | 2017-11-07 | 2019-09-30 | Ферро Корпорэйшн | Композиции диэлектрика с низкой к для применений при высоких частотах |
DE102018112069A1 (de) * | 2018-05-18 | 2019-11-21 | Schott Ag | Verwendung eines Flachglases in elektronischen Bauteilen |
CN109206015B (zh) * | 2018-10-08 | 2022-03-11 | 浙江矽瓷科技有限公司 | 一种低温、低电压阳极键合基板材料及其制备方法 |
US11503704B2 (en) * | 2019-12-30 | 2022-11-15 | General Electric Company | Systems and methods for hybrid glass and organic packaging for radio frequency electronics |
DE102020133756A1 (de) | 2020-12-16 | 2022-06-23 | Infineon Technologies Ag | Hochfrequenzvorrichtungen mit dämpfenden dielektrischen Materialien |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2965519A (en) | 1958-11-06 | 1960-12-20 | Bell Telephone Labor Inc | Method of making improved contacts to semiconductors |
US3543394A (en) * | 1967-05-24 | 1970-12-01 | Sheldon L Matlow | Method for depositing thin films in controlled patterns |
US3417393A (en) | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
DE1934217C3 (de) | 1969-07-05 | 1974-05-22 | Leybold-Heraeus Gmbh & Co Kg, 5000 Koeln | Glas für die Herstellung dünner Schichten durch Aufdampfen im Hochvakuum |
JPS5120699B2 (ja) * | 1971-08-27 | 1976-06-26 | ||
US4035276A (en) * | 1976-04-29 | 1977-07-12 | Ibm Corporation | Making coplanar layers of thin films |
JPS53106464A (en) * | 1977-02-28 | 1978-09-16 | Sharp Kk | Multilayer circuit board |
US4564997A (en) | 1981-04-21 | 1986-01-21 | Nippon-Telegraph And Telephone Public Corporation | Semiconductor device and manufacturing process thereof |
US4492717A (en) | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
FR2525391B1 (fr) * | 1982-04-16 | 1985-09-13 | Thomson Csf | Substrat pour circuit electronique fonctionnant dans la gamme des hyperfrequences, et procede de metallisation de ce substrat |
US4439270A (en) * | 1983-08-08 | 1984-03-27 | International Business Machines Corporation | Process for the controlled etching of tapered vias in borosilicate glass dielectrics |
US4508815A (en) * | 1983-11-03 | 1985-04-02 | Mostek Corporation | Recessed metallization |
JPS613431A (ja) | 1984-06-15 | 1986-01-09 | Nec Corp | 多層配線を有する半導体装置およびその製造方法 |
JPS61151038A (ja) | 1984-12-24 | 1986-07-09 | Toshiba Glass Co Ltd | 半導体被覆用タ−ゲツトガラス |
US4819039A (en) | 1986-12-22 | 1989-04-04 | American Telephone And Telegraph Co. At&T Laboratories | Devices and device fabrication with borosilicate glass |
JPH0238775A (ja) | 1988-07-27 | 1990-02-08 | Hitachi Metals Ltd | 圧電体駆動回路 |
US5024975A (en) * | 1989-10-19 | 1991-06-18 | E. I. Du Pont De Nemours And Co., Inc. | Crystallizable, low dielectric constant, low dielectric loss composition |
JPH0636472B2 (ja) | 1990-05-28 | 1994-05-11 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 多層配線基板の製造方法 |
JPH04320356A (ja) * | 1991-04-19 | 1992-11-11 | Fujitsu Ltd | 薄膜回路基板の製造方法 |
US5264399A (en) * | 1992-04-28 | 1993-11-23 | International Business Machines Corporation | Ceramic composite body |
JPH0637251A (ja) | 1992-07-14 | 1994-02-10 | Rohm Co Ltd | 半導体装置 |
JPH0669653A (ja) * | 1992-08-20 | 1994-03-11 | Fujitsu Ltd | 多層回路基板及びその製造方法 |
JPH06112710A (ja) | 1992-09-25 | 1994-04-22 | Sumitomo Metal Ind Ltd | 高周波回路基板 |
DE4236264C1 (ja) | 1992-10-27 | 1993-09-02 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De | |
JP3381332B2 (ja) | 1993-08-24 | 2003-02-24 | 日本電気硝子株式会社 | 高誘電率ガラスセラミック |
US5597767A (en) | 1995-01-06 | 1997-01-28 | Texas Instruments Incorporated | Separation of wafer into die with wafer-level processing |
WO1996022949A1 (en) * | 1995-01-27 | 1996-08-01 | Sarnoff Corporation | Low dielectric loss glasses |
US5639325A (en) * | 1995-02-01 | 1997-06-17 | The Whitaker Corporation | Process for producing a glass-coated article |
JP3236882B2 (ja) * | 1995-02-13 | 2001-12-10 | 三菱マテリアル株式会社 | 窒化アルミニウム基板及びその製造方法 |
DE19638380B4 (de) | 1995-09-22 | 2004-11-04 | Murata Manufacturing Co., Ltd., Nagaokakyo | Verwendung einer Glasmasse mit einer niedrigen Dielektrizitätskonstante für Hochfrequenzstromkreise |
JPH09142876A (ja) * | 1995-09-22 | 1997-06-03 | Murata Mfg Co Ltd | 高周波用低誘電率ガラス組成物 |
US5696466A (en) * | 1995-12-08 | 1997-12-09 | The Whitaker Corporation | Heterolithic microwave integrated impedance matching circuitry and method of manufacture |
US5822856A (en) | 1996-06-28 | 1998-10-20 | International Business Machines Corporation | Manufacturing circuit board assemblies having filled vias |
TW424321B (en) | 1996-10-31 | 2001-03-01 | Sharp Kk | Integrated electronic circuit |
JP3935558B2 (ja) | 1997-06-04 | 2007-06-27 | 大日本印刷株式会社 | パターン形成方法 |
EP0915513A1 (en) * | 1997-10-23 | 1999-05-12 | STMicroelectronics S.r.l. | High quality factor, integrated inductor and production method thereof |
JP3827846B2 (ja) | 1997-12-11 | 2006-09-27 | 大日本印刷株式会社 | 配線基板の製造方法と配線基板 |
US6620731B1 (en) | 1997-12-18 | 2003-09-16 | Micron Technology, Inc. | Method for fabricating semiconductor components and interconnects with contacts on opposing sides |
DE19846691C1 (de) | 1998-10-09 | 1999-11-25 | Daimler Chrysler Ag | Verfahren zur Mikrostrukturierung von Gläsern |
KR100318684B1 (ko) * | 1999-12-18 | 2001-12-28 | 윤종용 | 반도체 메모리 장치의 캐패시터 제조 방법 |
JP3680684B2 (ja) | 2000-03-06 | 2005-08-10 | 株式会社村田製作所 | 絶縁体磁器、セラミック多層基板、セラミック電子部品及び積層セラミック電子部品 |
US6262464B1 (en) | 2000-06-19 | 2001-07-17 | International Business Machines Corporation | Encapsulated MEMS brand-pass filter for integrated circuits |
JP3457266B2 (ja) * | 2000-06-21 | 2003-10-14 | 日本電信電話株式会社 | 素子実装基板および素子実装基板の製造方法 |
US6329702B1 (en) * | 2000-07-06 | 2001-12-11 | Tyco Electronics Corporation | High frequency carrier |
DE10042653A1 (de) | 2000-08-31 | 2002-03-28 | Bosch Gmbh Robert | Keramische Mehrlagenschaltung |
US6444517B1 (en) * | 2002-01-23 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | High Q inductor with Cu damascene via/trench etching simultaneous module |
-
2003
- 2003-05-23 JP JP2004508410A patent/JP2005535108A/ja not_active Withdrawn
- 2003-05-23 CN CNA038118211A patent/CN1656612A/zh active Pending
- 2003-05-23 US US10/514,876 patent/US8273671B2/en active Active
- 2003-05-23 JP JP2004508402A patent/JP5027992B2/ja not_active Expired - Lifetime
- 2003-05-23 WO PCT/EP2003/005414 patent/WO2003100846A2/de active Application Filing
- 2003-05-23 AU AU2003247287A patent/AU2003247287A1/en not_active Abandoned
- 2003-05-23 EP EP03755118A patent/EP1506578A2/de not_active Withdrawn
-
2010
- 2010-04-02 JP JP2010086382A patent/JP2010153927A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US8273671B2 (en) | 2012-09-25 |
WO2003100846A3 (de) | 2004-03-18 |
AU2003247287A8 (en) | 2003-12-12 |
EP1506578A2 (de) | 2005-02-16 |
JP2005535108A (ja) | 2005-11-17 |
JP2010153927A (ja) | 2010-07-08 |
CN1656612A (zh) | 2005-08-17 |
WO2003100846A2 (de) | 2003-12-04 |
AU2003247287A1 (en) | 2003-12-12 |
US20070166520A1 (en) | 2007-07-19 |
JP2006513558A (ja) | 2006-04-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2010153927A (ja) | 高周波用途のためのガラス材料 | |
US7825029B2 (en) | Method for the production of structured layers on substrates | |
US5286926A (en) | Integrated circuit package and process for producing same | |
KR102518025B1 (ko) | 접지면을 갖는 고효율 컴팩트형 슬롯 안테나 | |
JP2002261189A (ja) | 高周波用回路チップ及びその製造方法 | |
CA2484794A1 (en) | Glass material for use at high frequencies | |
US20210175136A1 (en) | Heterogenous Integration for RF, Microwave and MM Wave Systems in Photoactive Glass Substrates | |
JPH09124358A (ja) | 低温焼成磁器組成物 | |
US8529780B2 (en) | Ceramic substrate material, method for the production and use thereof, and antenna or antenna array | |
US8659206B2 (en) | Method for producing a dielectric layer in an electroacoustic component, and electroacoustic component | |
KR100735396B1 (ko) | 박막 캐패시터, 박막 캐패시터 내장형 인쇄회로기판 및 그제조방법 | |
JPH0447978B2 (ja) | ||
KR20050019082A (ko) | 고주파수에서 사용을 위한 유리물질 | |
CA3177603C (en) | Broadband induction | |
KR100942944B1 (ko) | 다층 박막 기판의 제조 방법 및 그 다층 박막 기판 | |
KR20050024283A (ko) | 고주파수에서 사용하기에 적합한 도전체 구조를 포함하는부품 생산 방법 | |
KR100868386B1 (ko) | 기판의 패턴화 코팅 방법 및 상기 방법에 의해 생성된 코팅 기판 | |
US20060024901A1 (en) | Method for fabricating a high-frequency and high-power semiconductor module | |
KR20240095180A (ko) | 전력 증폭기 시스템 인 패키지 | |
JPS60254639A (ja) | 電極膜およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080312 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080612 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080619 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080714 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080722 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080812 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100402 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100521 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20101029 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110531 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110606 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120112 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120412 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120625 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150629 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5027992 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |