WO2003100846A3 - Glasmaterial für hochfrequenzanwendungen - Google Patents

Glasmaterial für hochfrequenzanwendungen Download PDF

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Publication number
WO2003100846A3
WO2003100846A3 PCT/EP2003/005414 EP0305414W WO03100846A3 WO 2003100846 A3 WO2003100846 A3 WO 2003100846A3 EP 0305414 W EP0305414 W EP 0305414W WO 03100846 A3 WO03100846 A3 WO 03100846A3
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WO
WIPO (PCT)
Prior art keywords
frequency
glass material
high frequencies
conductor assemblies
layer
Prior art date
Application number
PCT/EP2003/005414
Other languages
English (en)
French (fr)
Other versions
WO2003100846A2 (de
Inventor
Juergen Leib
Dietrich Mund
Original Assignee
Schott Glas
Zeiss Stiftung
Juergen Leib
Dietrich Mund
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10222609A external-priority patent/DE10222609B4/de
Priority claimed from PCT/EP2003/003907 external-priority patent/WO2003088347A2/de
Application filed by Schott Glas, Zeiss Stiftung, Juergen Leib, Dietrich Mund filed Critical Schott Glas
Priority to EP03755118A priority Critical patent/EP1506578A2/de
Priority to CA002484794A priority patent/CA2484794A1/en
Priority to AU2003247287A priority patent/AU2003247287A1/en
Priority to JP2004508402A priority patent/JP5027992B2/ja
Priority to US10/514,876 priority patent/US8273671B2/en
Publication of WO2003100846A2 publication Critical patent/WO2003100846A2/de
Publication of WO2003100846A3 publication Critical patent/WO2003100846A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
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    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
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    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
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    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
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Abstract

Zur Verbesserung der Hochfrequenzeigenschaften von Hochfrequenz-Substraten oder Hochfrequenz­Leiteranordnungen wird ein Glasmaterial zur Herstellung von Isolationsschichten für Hochfrequenz-Substrate oder Hochfrequenz Leiteranordnungen vorgeschlagen, welches als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 um bis 5 mm in zumindest einem Frequenzbereich to oberhalb von 1 GHz einen Verlustfaktor tan8 kleiner oder gleich 70*10-4 aufweist.
PCT/EP2003/005414 2002-05-23 2003-05-23 Glasmaterial für hochfrequenzanwendungen WO2003100846A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP03755118A EP1506578A2 (de) 2002-05-23 2003-05-23 Glasmaterial für hochfrequenzanwendungen
CA002484794A CA2484794A1 (en) 2002-05-23 2003-05-23 Glass material for use at high frequencies
AU2003247287A AU2003247287A1 (en) 2002-05-23 2003-05-23 Glass material for use at high frequencies
JP2004508402A JP5027992B2 (ja) 2002-05-23 2003-05-23 高周波用途のためのガラス材料
US10/514,876 US8273671B2 (en) 2002-05-23 2003-05-23 Glass material for radio-frequency applications

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10222609A DE10222609B4 (de) 2002-04-15 2002-05-23 Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat
DE10222609.1 2002-05-23
EPPCT/EP03/03907 2003-04-15
PCT/EP2003/003907 WO2003088347A2 (de) 2002-04-15 2003-04-15 Verfahren zum verbinden von substraten und verbundelement

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WO2003100846A2 WO2003100846A2 (de) 2003-12-04
WO2003100846A3 true WO2003100846A3 (de) 2004-03-18

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US (1) US8273671B2 (de)
EP (1) EP1506578A2 (de)
JP (3) JP5027992B2 (de)
CN (1) CN1656612A (de)
AU (1) AU2003247287A1 (de)
WO (1) WO2003100846A2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003237668A1 (en) 2002-05-23 2003-12-12 Schott Ag Method for producing a component comprising a conductor structure that is suitable for use at high frequencies and corresponding component
US8003513B2 (en) 2002-09-27 2011-08-23 Medtronic Minimed, Inc. Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures
US20040061232A1 (en) * 2002-09-27 2004-04-01 Medtronic Minimed, Inc. Multilayer substrate
DE102007016659B8 (de) * 2007-04-04 2015-12-03 Tricumed Medizintechnik Gmbh Infusionspumpe, Kanalplatte für eine Infusionspumpe und Verfahren zu ihrer Herstellung
DE102008034372B4 (de) 2008-07-23 2013-04-18 Msg Lithoglas Ag Verfahren zum Herstellen einer dielektrischen Schicht in einem elektroakustischen Bauelement sowie elektroakustisches Bauelement
DE102008044938B4 (de) 2008-08-29 2013-10-10 Schott Ag Verfahren zur Terminierung von lichtleitenden Faserbündeln sowie Hülse mit einem Faserbündel
DE102008037613A1 (de) * 2008-11-28 2010-06-02 Schott Solar Ag Verfahren zur Herstellung eines Metallkontakts
EP2662153A1 (de) * 2009-03-26 2013-11-13 Norwegian University of Science and Technology (NTNU) CMUT-Array
DE102009002662B4 (de) 2009-04-27 2022-11-24 Ifm Electronic Gmbh Kapazitiver Drucksensor als Kombinationssensor zur Erfassung weiterer Messgrößen
DE102009034532A1 (de) * 2009-07-23 2011-02-03 Msg Lithoglas Ag Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat
JP2015518519A (ja) * 2012-03-30 2015-07-02 エムエスゲー リトグラス ゲーエムベーハー 半導体装置およびガラス状の層を生成するための方法
US9673131B2 (en) 2013-04-09 2017-06-06 Intel Corporation Integrated circuit package assemblies including a glass solder mask layer
JP6447075B2 (ja) * 2014-12-10 2019-01-09 凸版印刷株式会社 配線基板、半導体装置及び半導体装置の製造方法
JP6832630B2 (ja) * 2016-03-28 2021-02-24 富士通インターコネクトテクノロジーズ株式会社 配線基板の製造方法
CN116282901A (zh) * 2016-09-13 2023-06-23 Ａｇｃ株式会社 高频器件用玻璃基板和高频器件用电路基板
RU2701611C1 (ru) * 2017-11-07 2019-09-30 Ферро Корпорэйшн Композиции диэлектрика с низкой к для применений при высоких частотах
DE102018112069A1 (de) * 2018-05-18 2019-11-21 Schott Ag Verwendung eines Flachglases in elektronischen Bauteilen
CN109206015B (zh) * 2018-10-08 2022-03-11 浙江矽瓷科技有限公司 一种低温、低电压阳极键合基板材料及其制备方法
US11503704B2 (en) * 2019-12-30 2022-11-15 General Electric Company Systems and methods for hybrid glass and organic packaging for radio frequency electronics
DE102020133756A1 (de) 2020-12-16 2022-06-23 Infineon Technologies Ag Hochfrequenzvorrichtungen mit dämpfenden dielektrischen Materialien

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1934217A1 (de) * 1969-07-05 1971-06-09 Leybold Heraeus Gmbh & Co Kg Glas fuer die Herstellung duenner Schichten durch Aufdampfen im Hochvakuum
US4508815A (en) * 1983-11-03 1985-04-02 Mostek Corporation Recessed metallization
DE4236264C1 (de) * 1992-10-27 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De
US5710082A (en) * 1995-09-22 1998-01-20 Murata Manufacturing Co., Ltd. Glass composition having a low dielectric constant for high-frequency circuits
US20010026864A1 (en) * 2000-03-06 2001-10-04 Murata Manufacturing Co. ,Ltd. Insulating ceramic, multilayer ceramic substrate, ceramic electronic parts and laminated ceramic electronic parts

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2965519A (en) 1958-11-06 1960-12-20 Bell Telephone Labor Inc Method of making improved contacts to semiconductors
US3543394A (en) * 1967-05-24 1970-12-01 Sheldon L Matlow Method for depositing thin films in controlled patterns
US3417393A (en) 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS5120699B2 (de) * 1971-08-27 1976-06-26
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
JPS53106464A (en) * 1977-02-28 1978-09-16 Sharp Kk Multilayer circuit board
US4564997A (en) 1981-04-21 1986-01-21 Nippon-Telegraph And Telephone Public Corporation Semiconductor device and manufacturing process thereof
US4492717A (en) 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
FR2525391B1 (fr) * 1982-04-16 1985-09-13 Thomson Csf Substrat pour circuit electronique fonctionnant dans la gamme des hyperfrequences, et procede de metallisation de ce substrat
US4439270A (en) * 1983-08-08 1984-03-27 International Business Machines Corporation Process for the controlled etching of tapered vias in borosilicate glass dielectrics
JPS613431A (ja) 1984-06-15 1986-01-09 Nec Corp 多層配線を有する半導体装置およびその製造方法
JPS61151038A (ja) 1984-12-24 1986-07-09 Toshiba Glass Co Ltd 半導体被覆用タ−ゲツトガラス
US4819039A (en) * 1986-12-22 1989-04-04 American Telephone And Telegraph Co. At&T Laboratories Devices and device fabrication with borosilicate glass
JPH0238775A (ja) 1988-07-27 1990-02-08 Hitachi Metals Ltd 圧電体駆動回路
US5024975A (en) * 1989-10-19 1991-06-18 E. I. Du Pont De Nemours And Co., Inc. Crystallizable, low dielectric constant, low dielectric loss composition
JPH0636472B2 (ja) 1990-05-28 1994-05-11 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 多層配線基板の製造方法
JPH04320356A (ja) * 1991-04-19 1992-11-11 Fujitsu Ltd 薄膜回路基板の製造方法
US5264399A (en) * 1992-04-28 1993-11-23 International Business Machines Corporation Ceramic composite body
JPH0637251A (ja) 1992-07-14 1994-02-10 Rohm Co Ltd 半導体装置
JPH0669653A (ja) * 1992-08-20 1994-03-11 Fujitsu Ltd 多層回路基板及びその製造方法
JPH06112710A (ja) 1992-09-25 1994-04-22 Sumitomo Metal Ind Ltd 高周波回路基板
JP3381332B2 (ja) 1993-08-24 2003-02-24 日本電気硝子株式会社 高誘電率ガラスセラミック
US5597767A (en) 1995-01-06 1997-01-28 Texas Instruments Incorporated Separation of wafer into die with wafer-level processing
EP0805785B1 (de) * 1995-01-27 2002-09-25 Sarnoff Corporation Gläser mit niedrigem dielektrischem verlust
US5639325A (en) * 1995-02-01 1997-06-17 The Whitaker Corporation Process for producing a glass-coated article
JP3236882B2 (ja) * 1995-02-13 2001-12-10 三菱マテリアル株式会社 窒化アルミニウム基板及びその製造方法
JPH09142876A (ja) * 1995-09-22 1997-06-03 Murata Mfg Co Ltd 高周波用低誘電率ガラス組成物
US5696466A (en) * 1995-12-08 1997-12-09 The Whitaker Corporation Heterolithic microwave integrated impedance matching circuitry and method of manufacture
US5822856A (en) 1996-06-28 1998-10-20 International Business Machines Corporation Manufacturing circuit board assemblies having filled vias
US5929510A (en) 1996-10-31 1999-07-27 Sarnoff Corporation Integrated electronic circuit
JP3935558B2 (ja) 1997-06-04 2007-06-27 大日本印刷株式会社 パターン形成方法
EP0915513A1 (de) * 1997-10-23 1999-05-12 STMicroelectronics S.r.l. Integrierte Spule mit hohem Gütefaktor und deren Herstellungsverfahren
JP3827846B2 (ja) 1997-12-11 2006-09-27 大日本印刷株式会社 配線基板の製造方法と配線基板
US6620731B1 (en) 1997-12-18 2003-09-16 Micron Technology, Inc. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
DE19846691C1 (de) 1998-10-09 1999-11-25 Daimler Chrysler Ag Verfahren zur Mikrostrukturierung von Gläsern
KR100318684B1 (ko) * 1999-12-18 2001-12-28 윤종용 반도체 메모리 장치의 캐패시터 제조 방법
US6262464B1 (en) 2000-06-19 2001-07-17 International Business Machines Corporation Encapsulated MEMS brand-pass filter for integrated circuits
JP3457266B2 (ja) * 2000-06-21 2003-10-14 日本電信電話株式会社 素子実装基板および素子実装基板の製造方法
US6329702B1 (en) * 2000-07-06 2001-12-11 Tyco Electronics Corporation High frequency carrier
DE10042653A1 (de) 2000-08-31 2002-03-28 Bosch Gmbh Robert Keramische Mehrlagenschaltung
US6444517B1 (en) * 2002-01-23 2002-09-03 Taiwan Semiconductor Manufacturing Company High Q inductor with Cu damascene via/trench etching simultaneous module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1934217A1 (de) * 1969-07-05 1971-06-09 Leybold Heraeus Gmbh & Co Kg Glas fuer die Herstellung duenner Schichten durch Aufdampfen im Hochvakuum
US4508815A (en) * 1983-11-03 1985-04-02 Mostek Corporation Recessed metallization
DE4236264C1 (de) * 1992-10-27 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De
US5710082A (en) * 1995-09-22 1998-01-20 Murata Manufacturing Co., Ltd. Glass composition having a low dielectric constant for high-frequency circuits
US20010026864A1 (en) * 2000-03-06 2001-10-04 Murata Manufacturing Co. ,Ltd. Insulating ceramic, multilayer ceramic substrate, ceramic electronic parts and laminated ceramic electronic parts

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
TUMMALA R ET AL: "MICROELECTRONICS PACKAGING HANDBOOK", 1989, MICROELECTRONICS PACKAGING HANDBOOK, NEW YORK, VAN NOSTRAND REINHOLD, US, PAGE(S) 548, XP002264135 *
WEICHEL S ET AL: "Silicon-to-silicon wafer bonding using evaporated glass", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 70, no. 1-2, 1 October 1998 (1998-10-01), pages 179 - 184, XP004140130, ISSN: 0924-4247 *

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WO2003100846A2 (de) 2003-12-04
US20070166520A1 (en) 2007-07-19
JP2005535108A (ja) 2005-11-17
US8273671B2 (en) 2012-09-25
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EP1506578A2 (de) 2005-02-16
JP5027992B2 (ja) 2012-09-19

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