JP2006513558A - 高周波用途のためのガラス材料 - Google Patents
高周波用途のためのガラス材料 Download PDFInfo
- Publication number
- JP2006513558A JP2006513558A JP2004508402A JP2004508402A JP2006513558A JP 2006513558 A JP2006513558 A JP 2006513558A JP 2004508402 A JP2004508402 A JP 2004508402A JP 2004508402 A JP2004508402 A JP 2004508402A JP 2006513558 A JP2006513558 A JP 2006513558A
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- Prior art keywords
- layer
- glass
- substrate
- contact
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011521 glass Substances 0.000 title claims abstract description 249
- 239000000463 material Substances 0.000 title claims abstract description 96
- 239000010410 layer Substances 0.000 claims abstract description 252
- 239000004020 conductor Substances 0.000 claims abstract description 182
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000011247 coating layer Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 75
- 238000000576 coating method Methods 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 41
- 238000007740 vapor deposition Methods 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 7
- 239000003513 alkali Substances 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 4
- 238000000869 ion-assisted deposition Methods 0.000 claims description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 22
- 238000012360 testing method Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 6
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- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
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- 239000003990 capacitor Substances 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002650 laminated plastic Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/003—Coplanar lines
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- H05K3/467—Adding a circuit layer by thin film methods
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- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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Abstract
Description
組成 組成範囲
SiO2 40〜90
B2O3 10〜40
Al2O3 0〜5
K2O 0〜5
Li2O 0〜3
Na2O 0〜3
上記数値は重量百分率である。
組成 組成範囲
SiO2 60〜90
B2O3 10〜30
Al2O3 0〜3
K2O 0〜3
Li2O 0〜2
Na2O 0〜2
組成 ガラス1 ガラス2
SiO2 84±5 71±5
B2O3 11±5 26±5
Na2O 2±0.2 0.5±0.2
Li2O 0・3±0.2 0.5±0.2
K2O 0.3±0.2 1.0±0.2
Al2O3 0.5±0.2 1.0±0.2
20℃〜300℃の熱膨張係数:α20〜300=3.2×10−6/K
屈折率: nd=1.465
転移温度: Tg=466℃
軟化点: TEW=742℃
動作点: TVA=1207℃
40GHzでの相対誘電率: εR=3.9
40GHzでの損失係数: tanδ=26×10−4
密度: ρ=2.12g/cm3
耐水性クラス: 2
耐酸性クラス: 2
耐アルカリ性クラス: 3
この特に適したガラスを以下ではガラスG018−189とも呼ぶ。
20℃〜300℃の熱膨張係数:α20〜300=2.75×10−6/K
屈折率: nd=1.47
転移温度: Tg=562℃
40GHzでの相対誘電率: εR=5
40GHzでの損失係数: tanδ=40×10−6
密度: ρ=2.2g/cm3
耐水性クラス: 1
耐酸性クラス: 1
耐アルカリ性クラス: 2
同様に特に適したこのガラスを以下ではガラス8329とも呼ぶ。
図15〜17はガラス8329を用いた埋め込み共平面導波路の測定値を示す。
2 半導体ウェハ
3 1の第1側
4、41、42 導体構成
5 1の第2側
6 1の上の導電構造物を有する層
61〜64 6の導体構造体
71〜74 コンタクト−コネクション領域
8 コンタクト−コネクション領域71〜74の9の開口部
9、91〜93 蒸着コーディングガラス層
10 構成要素
11 導体構造物を有する層
100、111、112、113 導体構造体
13 最終的な蒸着コーディングガラス層
14 蒸着コーディングガラスの封止層
15 バイア
17 溶着ビード
19 導電性材料
21 中間層のレジスト構造体
23 受動電気構成要素
25 導電層
27 フォトリソグラフィで構造化可能な中間層
29 分離軸線
31 可塑性カバー
33 能動半導体領域
35 33の接続場所
37 1を貫通するバイア
39 受動層
43 37の導電性充填物
75、76 コンタクト−コネクション領域
90 レジスト構造体上の蒸着コーティングガラス層の領域
Claims (39)
- 1GHzを超える少なくともある周波数範囲において70×10−4以下の損失係数tanδを有し、塗布層(9、91、92、93、13)として特に0.05μm〜5mmの範囲、好適には0.05μm〜1mmの範囲の層厚を有する、高周波基板または高周波導体構成用の絶縁層を形成するガラス材料。
- 前記材料が、特に0.05μm〜5mmの範囲の層厚を有する塗布層(9、91、92、93、13)として、約40GHzの範囲の周波数において50×10−4以下の損失係数tanδを有する請求項1に記載のガラス材料。
- 前記材料が、特に0.05μm〜5mmの範囲の層厚を有する塗布層(9、91、92、93、13)として、40GHzの周波数において30×10−4以下の損失係数tanδを有する請求項1または2に記載のガラス材料。
- 層(9、91、92、93、13)を堆積させるために蒸着することのできる請求項1乃至3のいずれか1項に記載のガラス材料。
- 電子ビーム蒸着法によって蒸着することのできる請求項1乃至4のいずれか1項に記載のガラス材料。
- 1300℃より低い動作点を有する請求項1乃至5のいずれか1項に記載のガラス材料。
- 塗布層として特に0.05μm〜5mmの範囲の層厚を有する、1GHzを超える少なくともある周波数範囲において5以下の相対誘電率εRを有する請求項1乃至6のいずれか1項に記載のガラス材料。
- 塗布層として特に0.05μm〜5mmの範囲の層厚を有する、40GHzの周波数において、5以下の相対誘電率εR、特に5より小さい相対誘電率εRを有する請求項1乃至7のいずれか1項に記載のガラス材料。
- 塗布層として特に0.05μm〜5mmの範囲の層厚を有する、20℃〜300℃の温度範囲において2.9×10−6/K〜3.5×10−6/Kの範囲でα20〜300の熱膨張係数を有する請求項1乃至8のいずれか1項に記載のガラス材料。
- 塗布層として特に0.05μm〜5mmの範囲の層厚を有する、20℃〜300℃の温度範囲において熱膨張係数α20〜300=(3.2±0.2)×10−6/Kを有する請求項1乃至9のいずれか1項に記載のガラス材料。
- 塗布層として特に0.05μm〜5mmの範囲の層厚を有する、基板材料の熱膨張係数とは20℃〜300℃の温度範囲において1×10−6/K未満だけ異なる熱膨張係数を有する請求項1乃至10のいずれか1項に記載のガラス材料。
- 塗布層として、耐酸性クラス2までの耐酸性を有する請求項1乃至11のいずれか1項に記載のガラス材料。
- 塗布層として、耐アルカリ性クラス3までの耐アルカリ性を有する請求項1乃至12のいずれか1項に記載のガラス材料。
- 重量百分率で以下の組成を有する請求項1乃至13のいずれか1項に記載のガラス材料:
SiO2 40〜90、
B2O3 10〜40、
Al2O3 0〜5、
K2O 0〜5、
Li2O 0〜3、
Na2O 0〜3。 - 重量百分率で以下の組成を有する請求項1乃至14のいずれか1項に記載のガラス材料:
SiO2 60〜90、
B2O3 105〜305、
Al2O3 0〜3、
K2O 0〜3、
Li2O 0〜2、
Na2O 0〜2。 - 重量百分率で以下の組成を有する請求項1乃至15のいずれか1項に記載のガラス材料:
SiO2 71±5、
B2O3 26±5、
Al2O3 1.0±0.2、
K2O 1.0±0.2、
Li2O 0.5±0.2、
Na2O 0.5±0.2。 - 重量百分率で以下の組成を有する請求項1乃至16のいずれか1項に記載のガラス材料:
SiO2 84±5、
B2O3 11±5、
Al2O3 0.5±0.2、
K2O 0.3±0.2、
Li2O 0・3±0.2、
Na2O 2±0.2。 - 高周波導体構造体または高周波基板用の絶縁層(9、91、92、93、13)を形成する請求項1乃至17のいずれか1項に記載のガラス材料の使用。
- 高周波導体構成(4、41、42)を有する構成要素(10)を形成する方法であって、
請求項1乃至18のいずれか1項に記載のガラス材料を用いて、少なくとも1つの開口部(8)を有する構造化されたガラス層(9、91、92、93、13)を基板(1)上のコンタクト−コネクション領域(71〜74)の上に堆積させる工程と、
前記コンタクト−コネクション領域(71〜74)と電気的に接触する、少なくとも1つの導体構造体(100、111、112、113)を前記ガラス層(9、91、92、93)に塗布する工程とから構成される方法。 - 前記ガラス層がガラス材料の蒸着によって堆積される請求項19に記載の方法。
- 前記少なくとも1つの導体構造体と接触する少なくとも1つの受動電気構成要素が、前記ガラス層(9、91、92、93)に塗布される請求項19または20に記載の方法。
- 先の段階で塗布された導体構造体のコンタクト−コネクション領域に後の段階で塗布される導体構造体を接触させた状態で、構造化されたガラス層を堆積させる前記工程と、少なくとも1つの導体構造体(111、112、113)を塗布する前記工程が多数回にわたって実行される請求項19乃至21のいずれか1項に記載の方法。
- 少なくとも1つの開口部(8)を有する構造化されたガラス層(9、91、92、93、13)を蒸着コーティングによってコンタクト−コネクション領域(71〜74)の上に堆積させる前記工程が、
前記コンタクト−コネクション領域を被覆する構造化された中間層(21)を塗布する工程と、
蒸着コーティングによって前記基板および該基板上に存在する前記中間層(21)にガラス層(9、91、92、93、13)を塗布する工程であり、該ガラス層(9、91、92、93、13)の厚さは前記構造化された中間層(21)の厚さより薄いことが好ましい工程と、
前記構造化された中間層(21)上に位置する前記ガラス層(9、91、92、93、13)のそれら領域(90)がガラス層によって持ち上げられた状態で、前記構造化された中間層(21)を除去する工程とから構成される請求項19乃至22のいずれか1項に記載の方法。 - 蒸着コーティングによって前記ガラス層を塗布する前に、前記コンタクト−コネクション領域に隣接する領域に対して突出する導電性材料(19)が、前記少なくとも1つのコンタクト−コネクション領域(71〜74)に塗布され、かつこの材料(19)が前記構造化された中間層(21)によって被覆される請求項23に記載の方法。
- 前記構造化された中間層(21)が印刷またはフォトリソグラフィ構造化によって形成される請求項23または24に記載の方法。
- 導体構造体の塗布が、少なくとも凹状に構造化された中間層を塗布する工程および導電性材料を堆積させる工程を含んだ請求項19乃至25のいずれか1項に記載の方法。
- 構造化されたガラス層(9、91、92、93、13)を堆積させる工程の前に、少なくとも1つの導体構造体、特に相互接続が前記基板に塗布される請求項19乃至26のいずれか1項に記載の方法。
- 請求項1乃至17のいずれか1項に記載のガラス材料を用いて最終ガラス層(13)を堆積し、かつ該最終ガラス層(13)に少なくとも1つのバイア(15)を形成する工程を含む請求項19乃至27のいずれか1項に記載の方法。
- 前記基板(1)が能動半導体領域(33)を有する半導体基板を含み、前記少なくとも1つの導体構造体(100、111、112、113)が、それが塗布されている間に、前記能動半導体領域(33)の接続場所(35)に接続される請求項19乃至28のいずれか1項に記載の方法。
- 前記少なくとも1つの導体構造体(100、111、112、113)が、それが塗布されている間に前記基板(1)を通るバイア(37)に接続される請求項19乃至29のいずれか1項に記載の方法。
- 蒸着コーティングによって前記ガラス層(9、91、92、93、13)を塗布する間に、前記基板(1)が50℃〜200℃、好適には80℃〜120℃に保たれる請求項19乃至30のいずれか1項に記載の方法。
- 前記ガラス層(9、91、92、93)が、1分当たり少なくとも0.1μmの層厚の堆積速度の蒸着コーティングによって塗布される請求項19乃至31のいずれか1項に記載の方法。
- 前記ガラス層(9、91、92、93、13)内の前記少なくとも1つの開口部(8)が導電性材料(19)で充填される請求項19乃至32のいずれか1項に記載の方法。
- 前記基板(1)がまだ前記ウェハに接合されている間に被覆される請求項19乃至33のいずれか1項に記載の方法。
- 蒸着コーティングによるガラス層(9、91、92、93、13)の塗布がプラズマ・イオン支援堆積法(PIAD)によって行われる請求項19乃至34のいずれか1項に記載の方法。
- 特に請求項19乃至35のいずれか1項に記載の方法を用いて形成される、高周波導体構成(4、41、42)を有する構成要素(10)であって、
少なくとも1つのコンタクト−コネクション領域(71〜74)を有する基板(1)と、
前記基板(1)の少なくとも一方の側(3、5)上にあって、バイアを有する少なくとも1つの開口部(8)を備えたガラス層であり、該ガラス層は特に請求項1乃至17のいずれか1項に記載の
ガラス材料の蒸着によって堆積され、かつ該バイアは前記コンタクト−コネクション領域(71〜74)と電気的に接触するガラス層と、
前記バイアと接触する、前記ガラス層(9、91、92、93)上の少なくとも1つの導体構造体(100、111、112、113)とを備えた構成要素(10)。 - 前記少なくとも1つの導体構造体(100、111、112、113)に接続された少なくとも1つの受動電気構成要素(23)を前記ガラス層(9、91、92、93、13)上に含む請求項36に記載の構成要素。
- 蒸着コーティングによって塗布され、かつ各々該ガラス層に塗布された導体構造体(100、111、112、113)を含む少なくとも2つのガラス層(9、91、92、93、13)を有する多層導体構成(4、41、42)を備え、第1のガラス層上の導体構造体がバイア(15)を介して第2のガラス層上の導体構造体と電気的に接触する請求項36および37のいずれか1項に記載の構成要素。
- 前記基板(1)が、前記基板(1)の第1の側(3)上に、前記導体構造体に接続された少なくとも1つの能動半導体領域(33)を有する半導体基板を含む請求項36乃至38のいずれか1項に記載の構成要素。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006500783A (ja) * | 2002-09-27 | 2006-01-05 | メドトロニック ミニメド インコーポレイテッド | 多層基板 |
US8003513B2 (en) | 2002-09-27 | 2011-08-23 | Medtronic Minimed, Inc. | Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures |
JP2012533686A (ja) * | 2009-07-23 | 2012-12-27 | エムエスゲー リトグラス アクチエンゲゼルシャフト | 構造化被覆部を基板上に形成する方法、被覆済み基板、および、被覆済み基板を備えた半完成品 |
JP2015518519A (ja) * | 2012-03-30 | 2015-07-02 | エムエスゲー リトグラス ゲーエムベーハー | 半導体装置およびガラス状の層を生成するための方法 |
JPWO2018051793A1 (ja) * | 2016-09-13 | 2019-06-24 | Agc株式会社 | 高周波デバイス用ガラス基板と高周波デバイス用回路基板 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003237668A1 (en) | 2002-05-23 | 2003-12-12 | Schott Ag | Method for producing a component comprising a conductor structure that is suitable for use at high frequencies and corresponding component |
DE102007016659B8 (de) * | 2007-04-04 | 2015-12-03 | Tricumed Medizintechnik Gmbh | Infusionspumpe, Kanalplatte für eine Infusionspumpe und Verfahren zu ihrer Herstellung |
DE102008034372B4 (de) | 2008-07-23 | 2013-04-18 | Msg Lithoglas Ag | Verfahren zum Herstellen einer dielektrischen Schicht in einem elektroakustischen Bauelement sowie elektroakustisches Bauelement |
DE102008044938B4 (de) | 2008-08-29 | 2013-10-10 | Schott Ag | Verfahren zur Terminierung von lichtleitenden Faserbündeln sowie Hülse mit einem Faserbündel |
DE102008037613A1 (de) * | 2008-11-28 | 2010-06-02 | Schott Solar Ag | Verfahren zur Herstellung eines Metallkontakts |
EP2669019A1 (en) * | 2009-03-26 | 2013-12-04 | Norwegian University of Science and Technology (NTNU) | An acoustic damping structure for use in an ultrasound transducer |
DE102009002662B4 (de) | 2009-04-27 | 2022-11-24 | Ifm Electronic Gmbh | Kapazitiver Drucksensor als Kombinationssensor zur Erfassung weiterer Messgrößen |
US9673131B2 (en) | 2013-04-09 | 2017-06-06 | Intel Corporation | Integrated circuit package assemblies including a glass solder mask layer |
JP6447075B2 (ja) * | 2014-12-10 | 2019-01-09 | 凸版印刷株式会社 | 配線基板、半導体装置及び半導体装置の製造方法 |
JP6832630B2 (ja) * | 2016-03-28 | 2021-02-24 | 富士通インターコネクトテクノロジーズ株式会社 | 配線基板の製造方法 |
RU2701611C1 (ru) * | 2017-11-07 | 2019-09-30 | Ферро Корпорэйшн | Композиции диэлектрика с низкой к для применений при высоких частотах |
DE102018112069A1 (de) * | 2018-05-18 | 2019-11-21 | Schott Ag | Verwendung eines Flachglases in elektronischen Bauteilen |
CN109206015B (zh) * | 2018-10-08 | 2022-03-11 | 浙江矽瓷科技有限公司 | 一种低温、低电压阳极键合基板材料及其制备方法 |
US11503704B2 (en) * | 2019-12-30 | 2022-11-15 | General Electric Company | Systems and methods for hybrid glass and organic packaging for radio frequency electronics |
DE102020133756A1 (de) | 2020-12-16 | 2022-06-23 | Infineon Technologies Ag | Hochfrequenzvorrichtungen mit dämpfenden dielektrischen Materialien |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2965519A (en) | 1958-11-06 | 1960-12-20 | Bell Telephone Labor Inc | Method of making improved contacts to semiconductors |
US3543394A (en) * | 1967-05-24 | 1970-12-01 | Sheldon L Matlow | Method for depositing thin films in controlled patterns |
US3417393A (en) | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
DE1934217C3 (de) * | 1969-07-05 | 1974-05-22 | Leybold-Heraeus Gmbh & Co Kg, 5000 Koeln | Glas für die Herstellung dünner Schichten durch Aufdampfen im Hochvakuum |
JPS5120699B2 (ja) * | 1971-08-27 | 1976-06-26 | ||
US4035276A (en) * | 1976-04-29 | 1977-07-12 | Ibm Corporation | Making coplanar layers of thin films |
JPS53106464A (en) * | 1977-02-28 | 1978-09-16 | Sharp Kk | Multilayer circuit board |
US4564997A (en) | 1981-04-21 | 1986-01-21 | Nippon-Telegraph And Telephone Public Corporation | Semiconductor device and manufacturing process thereof |
US4492717A (en) | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
FR2525391B1 (fr) * | 1982-04-16 | 1985-09-13 | Thomson Csf | Substrat pour circuit electronique fonctionnant dans la gamme des hyperfrequences, et procede de metallisation de ce substrat |
US4439270A (en) * | 1983-08-08 | 1984-03-27 | International Business Machines Corporation | Process for the controlled etching of tapered vias in borosilicate glass dielectrics |
US4508815A (en) * | 1983-11-03 | 1985-04-02 | Mostek Corporation | Recessed metallization |
JPS613431A (ja) | 1984-06-15 | 1986-01-09 | Nec Corp | 多層配線を有する半導体装置およびその製造方法 |
JPS61151038A (ja) | 1984-12-24 | 1986-07-09 | Toshiba Glass Co Ltd | 半導体被覆用タ−ゲツトガラス |
US4819039A (en) * | 1986-12-22 | 1989-04-04 | American Telephone And Telegraph Co. At&T Laboratories | Devices and device fabrication with borosilicate glass |
JPH0238775A (ja) | 1988-07-27 | 1990-02-08 | Hitachi Metals Ltd | 圧電体駆動回路 |
US5024975A (en) * | 1989-10-19 | 1991-06-18 | E. I. Du Pont De Nemours And Co., Inc. | Crystallizable, low dielectric constant, low dielectric loss composition |
JPH0636472B2 (ja) | 1990-05-28 | 1994-05-11 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 多層配線基板の製造方法 |
JPH04320356A (ja) * | 1991-04-19 | 1992-11-11 | Fujitsu Ltd | 薄膜回路基板の製造方法 |
US5264399A (en) * | 1992-04-28 | 1993-11-23 | International Business Machines Corporation | Ceramic composite body |
JPH0637251A (ja) | 1992-07-14 | 1994-02-10 | Rohm Co Ltd | 半導体装置 |
JPH0669653A (ja) * | 1992-08-20 | 1994-03-11 | Fujitsu Ltd | 多層回路基板及びその製造方法 |
JPH06112710A (ja) | 1992-09-25 | 1994-04-22 | Sumitomo Metal Ind Ltd | 高周波回路基板 |
DE4236264C1 (ja) * | 1992-10-27 | 1993-09-02 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De | |
JP3381332B2 (ja) | 1993-08-24 | 2003-02-24 | 日本電気硝子株式会社 | 高誘電率ガラスセラミック |
US5597767A (en) | 1995-01-06 | 1997-01-28 | Texas Instruments Incorporated | Separation of wafer into die with wafer-level processing |
WO1996022949A1 (en) * | 1995-01-27 | 1996-08-01 | Sarnoff Corporation | Low dielectric loss glasses |
US5639325A (en) * | 1995-02-01 | 1997-06-17 | The Whitaker Corporation | Process for producing a glass-coated article |
JP3236882B2 (ja) * | 1995-02-13 | 2001-12-10 | 三菱マテリアル株式会社 | 窒化アルミニウム基板及びその製造方法 |
CN1130315C (zh) | 1995-09-22 | 2003-12-10 | 株式会社村田制作所 | 用于高频电路的具有低介电常数的玻璃组合物 |
JPH09142876A (ja) * | 1995-09-22 | 1997-06-03 | Murata Mfg Co Ltd | 高周波用低誘電率ガラス組成物 |
US5696466A (en) * | 1995-12-08 | 1997-12-09 | The Whitaker Corporation | Heterolithic microwave integrated impedance matching circuitry and method of manufacture |
US5822856A (en) | 1996-06-28 | 1998-10-20 | International Business Machines Corporation | Manufacturing circuit board assemblies having filled vias |
US5929510A (en) | 1996-10-31 | 1999-07-27 | Sarnoff Corporation | Integrated electronic circuit |
JP3935558B2 (ja) | 1997-06-04 | 2007-06-27 | 大日本印刷株式会社 | パターン形成方法 |
EP0915513A1 (en) * | 1997-10-23 | 1999-05-12 | STMicroelectronics S.r.l. | High quality factor, integrated inductor and production method thereof |
JP3827846B2 (ja) | 1997-12-11 | 2006-09-27 | 大日本印刷株式会社 | 配線基板の製造方法と配線基板 |
US6620731B1 (en) | 1997-12-18 | 2003-09-16 | Micron Technology, Inc. | Method for fabricating semiconductor components and interconnects with contacts on opposing sides |
DE19846691C1 (de) | 1998-10-09 | 1999-11-25 | Daimler Chrysler Ag | Verfahren zur Mikrostrukturierung von Gläsern |
KR100318684B1 (ko) * | 1999-12-18 | 2001-12-28 | 윤종용 | 반도체 메모리 장치의 캐패시터 제조 방법 |
JP3680684B2 (ja) | 2000-03-06 | 2005-08-10 | 株式会社村田製作所 | 絶縁体磁器、セラミック多層基板、セラミック電子部品及び積層セラミック電子部品 |
US6262464B1 (en) | 2000-06-19 | 2001-07-17 | International Business Machines Corporation | Encapsulated MEMS brand-pass filter for integrated circuits |
JP3457266B2 (ja) * | 2000-06-21 | 2003-10-14 | 日本電信電話株式会社 | 素子実装基板および素子実装基板の製造方法 |
US6329702B1 (en) * | 2000-07-06 | 2001-12-11 | Tyco Electronics Corporation | High frequency carrier |
DE10042653A1 (de) | 2000-08-31 | 2002-03-28 | Bosch Gmbh Robert | Keramische Mehrlagenschaltung |
US6444517B1 (en) * | 2002-01-23 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | High Q inductor with Cu damascene via/trench etching simultaneous module |
-
2003
- 2003-05-23 CN CNA038118211A patent/CN1656612A/zh active Pending
- 2003-05-23 US US10/514,876 patent/US8273671B2/en active Active
- 2003-05-23 AU AU2003247287A patent/AU2003247287A1/en not_active Abandoned
- 2003-05-23 JP JP2004508410A patent/JP2005535108A/ja not_active Withdrawn
- 2003-05-23 EP EP03755118A patent/EP1506578A2/de not_active Withdrawn
- 2003-05-23 JP JP2004508402A patent/JP5027992B2/ja not_active Expired - Lifetime
- 2003-05-23 WO PCT/EP2003/005414 patent/WO2003100846A2/de active Application Filing
-
2010
- 2010-04-02 JP JP2010086382A patent/JP2010153927A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006500783A (ja) * | 2002-09-27 | 2006-01-05 | メドトロニック ミニメド インコーポレイテッド | 多層基板 |
US7781328B2 (en) | 2002-09-27 | 2010-08-24 | Medtronic Minimed, Inc. | Multilayer substrate |
US8003513B2 (en) | 2002-09-27 | 2011-08-23 | Medtronic Minimed, Inc. | Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures |
JP2012533686A (ja) * | 2009-07-23 | 2012-12-27 | エムエスゲー リトグラス アクチエンゲゼルシャフト | 構造化被覆部を基板上に形成する方法、被覆済み基板、および、被覆済み基板を備えた半完成品 |
JP2015518519A (ja) * | 2012-03-30 | 2015-07-02 | エムエスゲー リトグラス ゲーエムベーハー | 半導体装置およびガラス状の層を生成するための方法 |
JPWO2018051793A1 (ja) * | 2016-09-13 | 2019-06-24 | Agc株式会社 | 高周波デバイス用ガラス基板と高周波デバイス用回路基板 |
US10974987B2 (en) | 2016-09-13 | 2021-04-13 | AGC Inc. | Glass substrate for high-frequency device and circuit board for high-frequency device |
Also Published As
Publication number | Publication date |
---|---|
US8273671B2 (en) | 2012-09-25 |
CN1656612A (zh) | 2005-08-17 |
US20070166520A1 (en) | 2007-07-19 |
AU2003247287A1 (en) | 2003-12-12 |
WO2003100846A3 (de) | 2004-03-18 |
JP2005535108A (ja) | 2005-11-17 |
JP2010153927A (ja) | 2010-07-08 |
AU2003247287A8 (en) | 2003-12-12 |
EP1506578A2 (de) | 2005-02-16 |
WO2003100846A2 (de) | 2003-12-04 |
JP5027992B2 (ja) | 2012-09-19 |
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