Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
  • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
  • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B19/00—Other methods of shaping glass
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
  • C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C3/00—Glass compositions
  • C03C3/04—Glass compositions containing silica
  • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
  • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C3/00—Glass compositions
  • C03C3/04—Glass compositions containing silica
  • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
  • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C4/00—Compositions for glass with special properties
  • C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/10—Glass or silica
• • H—ELECTRICITY
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
  • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
  • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
  • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
  • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
  • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
  • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/314—Inorganic layers
  • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
  • H01L21/31604—Deposition from a gas or vapour
  • H01L21/31616—Deposition of Al2O3
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  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/314—Inorganic layers
  • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
  • H01L21/31604—Deposition from a gas or vapour
  • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
• • H—ELECTRICITY
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  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
  • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/02—Containers; Seals
  • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
  • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
  • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
  • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
  • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
  • H01L23/5329—Insulating materials
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  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/93—Batch processes
  • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
  • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
  • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
  • H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
  • H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
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  • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
  • H01P3/00—Waveguides; Transmission lines of the waveguide type
  • H01P3/003—Coplanar lines
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  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/46—Manufacturing multilayer circuits
  • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
  • H05K3/467—Adding a circuit layer by thin film methods
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  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
  • H10K50/842—Containers
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  • C03C2214/00—Nature of the non-vitreous component
  • C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
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  • C03C2217/00—Coatings on glass
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  • C03C2218/00—Methods for coating glass
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  • C03C2218/00—Methods for coating glass
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  • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
  • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Definitions

• the invention relates generally to the field of high-frequency circuits, in particular the invention relates to a glass material which is suitable for producing high-frequency conductor structures on a substrate, and to a high-frequency substrate.
• HTCC and LTCC materials at very high frequencies - generally above 40GHz - is limited by relatively high dielectric constants (DK) and loss angles (tan ⁇ ) in these frequency ranges.
• DK dielectric constants
• Tan ⁇ loss angles
• the HTCC and LTCC ceramics have an unavoidable grain size which has a negative influence on the high-frequency properties and which leads to the fact that the conductor tracks integrated therein are one of the Grain have corresponding surface roughness. This surface roughness leads to increased line losses.
• the substrates inevitably also shrink during sintering, which makes it difficult to precisely maintain the desired dimensions.
• the invention is therefore based on the object of providing improved materials for conductor track systems, in particular with regard to the radio frequency properties, and of improving the radio frequency properties of radio-frequency conductor arrangements.
• This task is already carried out in a surprisingly simple manner by a glass material for the production of insulation layers for high-frequency substrates or high-frequency conductor arrangements, a method for producing a component with a high-frequency conductor arrangement or high-frequency conductor track system, and a component with high-frequency conductor arrangement according to the independent Claims solved.
• Advantageous refinements and developments are the subject of the respective subclaims.
• a glass material according to the invention for the production of insulation layers for high-frequency substrates or high-frequency conductor arrangements has an applied layer, in particular with a layer thickness in the range from 0.05 ⁇ m to 5 mm, preferably in the range from 0.05 ⁇ m to 1 mm, in at least one frequency range above of 1 GHz
• Loss factor tan ⁇ less than or equal to 70 * 10 ⁇ 4 .
• LTCC and HTCC materials are valued, among other things, for their good encapsulation properties, which make it possible to use such a substrate as part of the housing of components.
• the encapsulation properties of glass layers are even better because glass has an extremely low permittivity for most gases.
• the glass material according to the invention is outstandingly suitable for high-frequency applications.
• a glass material according to the invention can be applied as a layer, in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm at a frequency of 40 GHz particularly advantageously have a loss factor tan ⁇ less than or equal to 50 * 10 ⁇ 4 .
• This low loss factor makes the glass material according to the invention excellently applicable for high-frequency applications even at very high frequencies in the microwave range.
• the loss factor tan ⁇ of a layer with a layer thickness in the range between 0.05 ⁇ m to 5 mm, which was applied using a glass material according to the invention is even less than or equal to 30 * 10 ⁇ 4 at a microwave frequency of 40 GHz.
• This loss factor is even lower than the loss factors of LTCC and HTCC substrates in the microwave range.
• the material can be evaporated to deposit a layer.
• insulation layers can be deposited on a substrate using a glass material according to the invention by PVD coating or by vapor deposition.
• this is particularly advantageous since only a moderate temperature load on the base or the substrate occurs.
• the deposition of glass layers by evaporation of the glass material for example from a target with the glass material according to the invention arranged at a distance from the surface to be coated, enables the production of very thin, homogeneous insulation layers.
• the use of the glass material thus also allows an increase in the
• Integration density of high-frequency components such as high-frequency substrates.
• a glass material according to this embodiment of the invention can accordingly be evaporated so that a glass layer or glass-like layer forms on the surface of a substrate, which faces the evaporation source and is exposed to the steam emitted by the source.
• This property of a glass material according to the invention is not fulfilled by all glass materials. With many glass materials, no glass layers or glass-like layers are formed, only non-glass-like oxide layers are deposited, which then generally no longer have good encapsulation and / or high-frequency properties.
• Glasses which comprise an at least binary material system are particularly suitable as steam glasses, or glass materials which can be vaporized and deposited again as glass-like or glass layers. Glass layers which have been deposited by evaporation of such glasses have particularly good encapsulation and high-frequency properties due to their low defect level.
• a glass material according to the invention can be evaporated by electron beam evaporation.
• electron beam evaporation a very small source spot can be created on a target with the glass material at the point of impact of the electron beam, on which the power of the electron beam is concentrated.
• Electron beam evaporation can also achieve high deposition rates on the substrate to be coated.
• the glass material can be processed easily, for example to form a glass target for electron beam evaporation, it is advantageous if the glass material has a processing temperature of less than 1300 ° C.
• Processing temperature is generally understood to mean the temperature at which the viscosity of the glass is 10 4 dPas.
• the glass material as an applied layer in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm, in at least one frequency range above 1 GHz, has a relative dielectric constant ⁇ R less than or equal to five having .
• the glass material as an applied layer in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm, also in the microwave range at a frequency of 40 GHz, a relative dielectric constant ⁇ R less than or equal to 5, in particular a relative dielectric constant ⁇ R of 4 Have ⁇ 0.5.
• the glass material as the applied layer in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm in a temperature range from 20 ° C. to 300 ° C., has a coefficient of thermal expansion ⁇ 2 o- 3 oo in the range is from 2.9xl0 "6 K " 1 to 3.5xl0 ⁇ 6 K "1.
• This coefficient of expansion is well adapted, among other things, to the coefficient of expansion of silicon or Borofloat ® 33 glass. For example, temperature stresses when using silicon or Borofloat ® 33 glass as substrate materials can be largely avoided.
• the glass material in particular, is applied as an applied layer a layer thickness in the range between 0.05 ⁇ m to 5 mm in a temperature range from 20 ° C. to 300 ° C.
• a glass material which, in order to reduce temperature stresses when used as an insulation layer in silicon substrates as an applied layer, in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm in a temperature range of 20 ° C. up to 300 ° C has a coefficient of thermal expansion that deviates from the coefficient of thermal expansion of the substrate material, for example silicon, less than 1 ⁇ 10 6 K 1
• the glass layer is as resistant as possible to the action of acids or alkalis.
• One embodiment of the invention therefore provides a glass material which, as an applied layer, is acid-resistant in accordance with acid resistance class ⁇ 2.
• the glass material as an applied layer is alkali-resistant according to alkali resistance class ⁇ 3.
• Glass materials according to the invention preferably have the following composition in percent by weight:
• T VA 1207 ° C
• This particularly suitable glass is also referred to below as glass G018-189.
• a further embodiment produces a suitable glass with the composition 84% by weight SiO 2 , 11% by weight B 2 0 3 , ⁇ 2% by weight A1 2 0 3 , 2.0% by weight Na 2 0 and in each case approximately 0.3% by weight Li 2 0 and K 2 0 the following properties were measured:
• This glass which is also particularly suitable, is also referred to below as glass 8329.
• compositions given above relate to the glass material before application.
• the layer that was applied using such a glass material can also have a different composition.
• the composition in the layer can change compared to the glass material according to the invention if the layer is deposited by vapor deposition and the components of the glass material have different vapor pressures.
• a glass material as described above can be used particularly advantageously for producing an insulation layer for a high-frequency conductor structure or a high-frequency substrate.
• a component with a high-frequency conductor arrangement can advantageously comprise the steps:
• Component can be manufactured with high-frequency conductor arrangement, which
• a substrate with at least one contacting area, on at least one side of the substrate a glass layer which has at least one opening with a via, and the via is in electrical contact with the contacting area, and at least one conductor structure on the glass layer which the via is in contact.
• a component is not only understood to be an electronic component. Also a coated substrate with high frequency conductor arrangement, respectively
• High-frequency conductor system which then serves as a whole as a carrier and for connecting further components, is understood as a component in the sense of this invention. Similar components with carrier material and high-frequency conductor system are generally also referred to as high-frequency substrates.
• Silicon, ceramic, glass or even plastic are suitable as substrate materials.
• Composite materials for example glass-plastic laminates, in particular also with integrated conductor arrangements can also be used.
• other semiconductor materials such as gallium arsenide can also be used, for example.
• Silicon, ceramics and glass as substrate material are also special due to their vapor-deposited glass very similar coefficients of thermal expansion.
• the glass layer is particularly preferably deposited by evaporating glass material according to the invention.
• the glass layer it is also conceivable for the glass layer to be deposited on the surface of the substrate to be coated, for example by sputtering, from a target with glass material according to the invention.
• the glass layer is vapor-deposited by means of plasma ion-assisted vapor deposition (PIAD).
• PIAD plasma ion-assisted vapor deposition
• An ion beam is directed onto the surface to be coated during the vapor deposition process. This leads to a further compression and a reduction in the defect density.
• one or more passive electrical components can also be applied to the glass layer and with the
• Conductor structure brought into contact or connected For example, a capacitor, a resistor, a coil, a varistor, a PTC, an NTC, or a filter element can be applied to the glass layer as a passive electrical component.
• a particularly advantageous embodiment of the invention provides for the production of a three-dimensional or multilayer conductor system on a substrate.
• the steps of depositing a structured glass layer and applying at least one conductor structure are carried out several times.
• the individual glass layers and / or conductor structures can be structured differently in order to form a three-dimensional conductor system, in particular also with passive components that are based on one or more Layers of the multilayer conductor system are formed.
• a subsequently applied conductor structure can advantageously be connected or brought into contact with a contact area of a previously applied conductor structure, so that an electrical connection is created between two layers of the conductor arrangement and the layers can be electrically networked with one another.
• a component can be formed which has a multilayer conductor arrangement with at least two vapor-deposited glass layers and a conductor structure applied thereon, a conductor structure on a first glass layer being in electrical contact with a conductor structure on a second glass layer via a plated-through hole.
• such a structured intermediate layer can also be produced directly, for example by printing.
• a further development of the method also provides for a conductive, opposite to, before the vapor deposition of the glass layer on the at least one contacting area
• Intermediate layer is photolithographically structured together with a layer of conductive material, the layer of conductive material together with the intermediate layer being removed from the regions which surround the contacting region.
• the glass layer can then advantageously be evaporated so that its thickness substantially corresponds to the thickness of the applied conductive material, so that an essentially flat surface is present after the glass layer has been lifted off over the contact area.
• a glass layer with at least one opening is deposited directly above a contact area or advantageously offset laterally, and the at least one opening in the glass layer is then filled with conductive material.
• the substrate is kept at a temperature between 50 ° C. and 200 ° C., preferably between 80 ° C. and 120 ° C., during the vapor deposition of the glass layer.
• the moderate heating is also advantageous for the morphology of the glass layers, it being possible to produce particularly pore-free glass layers at these substrate temperatures.
• a base pressure in the Aufdampfhimmmer which is in vapor deposition of the glass layer is at most in the range of 10 "4 mbar, preferably in the range of 10 -5 mbar or less retained.
• the surface of the substrate to be coated is one
• the glass layer to be vapor-deposited with a deposition rate of at least 0.5 ⁇ m layer thickness per minute.
• This high deposition rate can be achieved without disadvantage for the layer quality of the glass layers and allows a short manufacturing time.
• other vacuum deposition processes such as cathode sputtering, only achieve deposition rates of a few nanometers per minute.
• the application of the conductor structure can also advantageously include the steps of applying a negatively structured intermediate layer and then depositing include conductive material on the base coated with the intermediate layer.
• the base comprises the substrate and / or the substrate with one or more applied glass layers and conductor structures arranged thereon.
• This intermediate layer can also be structured photolithographically or produced by structured printing.
• the substrate itself can already have a conductor structure, for example in the form of conductor tracks. These can also advantageously be applied directly to the substrate before the step of depositing the structured glass layer.
• a contacting area can then be provided on a conductor track applied directly on the substrate, which contact area is then brought into contact with a conductor structure subsequently applied on an insulating glass layer.
• a multilayer, high-frequency conductor system, or a multilayer, high-frequency conductor arrangement can be created.
• the substrate comprises a semiconductor substrate with one or more active semiconductor regions on a first side of the substrate.
• the substrate can comprise a semiconductor integrated circuit.
• the at least one conductor structure can be applied with a Connection point of the active semiconductor region are connected so that there is electrical contact with the conductor structure and thus also with the conductor arrangement.
• the path has been disputed to monolithically integrate individual semiconductor components into cavities in the ceramic, so that the ceramic is the carrier for the semiconductor components.
• the invention also enables the reverse route, in which the conductor arrangement is applied directly to a chip and thus serves as a carrier for the conductor arrangement.
• a further embodiment of the invention provides a substrate which has at least one plated-through hole.
• the at least one conductor structure can then be connected to the via through the substrate during application.
• This embodiment of the invention makes it possible, among other things, to connect structures on one side of the substrate with a high-frequency conductor arrangement on a further side of the substrate.
• a further, final glass layer can additionally be deposited by vapor deposition, which covers the layers previously applied.
• at least one through-connection can advantageously be created through the final glass layer.
• This glass layer can be produced in the same way as the production of the underlying glass layers of the conductor arrangement.
• This further layer can serve as an insulation layer which insulates the conductor arrangement from the outside.
• the substrate is coated in the wafer composite, so that a large number of components are processed simultaneously.
• vapor-deposited glass layers are used as insulation layers.
• the glass material according to the invention can also be used in particular for the methods and components described in this application, the disclosure content of this application in this regard being hereby expressly incorporated by reference.
• a glass material according to the invention for the production of an insulation layer for a high-frequency conductor structure or a high-frequency substrate is generally considered in order to improve the high-frequency properties of such elements.
• Fig. 1 is a sectional view of a first
• FIG. 2 A sectional view of another
• FIG. 3A with the aid of cross-sectional views the steps of a to 3G embodiment of the method according to the invention
• FIG. 4A a variant of the method steps shown in FIGS
• Fig. 8 is a schematic layer structure for HF
• FIG. 10 shows a layer structure of buried coplanar lines CPW
• Fig. 11 is a listing of properties of measured
• FIG. 12 the amount of the scattering parameters and their up to 14 phase profile of the sample G1ACPW2 2 (glass 8329)
• 15 shows the amount of the scattering parameters and their up to 17 phase profile of the sample G1ACPW3_2 (glass 8329)
• FIG. 1 shows a simplified sectional illustration of a first embodiment of a component according to the invention, designated as a whole by reference number 10, having a substrate 1 with a first side 3 and a side 5 opposite to side 3 and a side 5 arranged on the substrate on the first side 3, as a whole with the reference number 4 high-frequency conductor arrangement.
• a layer 6 with conductor structures 61-64 is arranged on the substrate 1.
• the conductor structures 61-64 can be conductor tracks, for example.
• some of the conductor structures 61-64 can also be designed as passive electrical components.
• Contacting regions 71-74 are defined on these conductor structures 61-64 on the first side 3 of the substrate 1.
• an insulating glass layer 9 is then deposited in a structured manner by vapor deposition on the first side 3 of the substrate, so that it has openings 8 above the contacting areas 71-74. These openings 8 are filled with a conductive material 19, so that the openings in connection with the conductive fillings each create vias through the insulating glass layer 9.
• a layer 11 with further conductor structures 111, 112, 113 is applied to the glass layer 9. The conductor structures 111, 112, 113 are each in contact with at least one of the plated-through holes, so that an electrical connection of the conductor structures 111, 112, 113 to the conductor structures 61 - 64 of layer 6.
• the substrate thus has a multilayer conductor arrangement, the layers 6 and 11 of which are separated from one another by an insulating glass layer 9 with excellent high-frequency properties.
• the glass layer 9 can have a thickness in the range from 0.05 ⁇ m to 5 mm, glass layers produced by vapor deposition expediently having a thickness in the range from 0.05 ⁇ m to 1 mm.
• a further, final vapor-deposition glass layer 13 is deposited on the layer 11 with the conductor structures 111, 112, 113 and serves as external insulation of the conductor structures 111, 112, 113.
• Solder beads 17 are additionally applied to the plated-through holes 15 in order to attach and connect the component 10 to an SMT circuit board, for example.
• a target with glass material according to the invention is preferably evaporated by electron beam evaporation and deposited on the substrate 1.
• a glass according to the invention is used in particular as the glass material for producing the insulation layers 9, 13, which, as an applied layer with a layer thickness in the range between 0.05 ⁇ m to 5 mm, has a loss factor tan ⁇ less than or equal to 50 * 10 in at least one frequency range above 1 GHz ⁇ 4 .
• the above-described glasses 8329 and in particular G018-189 are particularly suitable for this due to its excellent high-frequency properties.
• Fig. 2 shows a sectional view of another
• Embodiment of a component 10 according to the invention has a high-frequency conductor arrangement 41 and 42 on two opposite sides 3 and 5, respectively.
• the conductor arrangements 41 and 42 are constructed analogously to the conductor arrangement 4 of the embodiment shown in FIG. 1.
• the conductor arrangements 41 and 42 each have a glass layer 9 made of vapor-deposited glass with openings in which conductive material is used
• Through-contacting is present and in electrical contact with contacting areas arranged under the openings.
• Layers 6 with conductor structures are arranged on the glass layers 9 of the conductor arrangements 41 and 42, which are in turn in contact with the plated-through holes.
• the conductor structures on the glass layer 9 are covered with further, final vapor-deposition glass layers 13, in which plated-through holes 15 are provided for the connection of the component.
• 3A to 3G show, using cross-sectional views, the steps for producing a component according to the invention in accordance with an embodiment of the method according to the invention.
• FIG. 3A shows a substrate 1 after a first processing step, in which a layer 6 with conductor structures 61-64, such as in particular of suitable conductor tracks, is produced on the side to which the high-frequency conductor arrangement is applied.
• a layer 6 with conductor structures 61-64 such as in particular of suitable conductor tracks, is produced on the side to which the high-frequency conductor arrangement is applied.
• these can For example, contact points of electronic components of the substrate, not shown in FIG. 3A, or connect to such contact points.
• a glass layer is deposited, which has openings over contact areas 71-74 of the underlying surface.
• a structured intermediate layer with structures 21, which cover the respective contacting regions 71-74 is applied in a further step. This is preferably accomplished by photolithographically structuring a suitable photoresist coating. Alternatively, however, another method, such as printing on the surface, can be used to produce the structures 21.
• a glass layer 9 is evaporated, which covers both those with the structures 21 of the intermediate layer
• the thickness of the glass layer 9 is preferably less than the thickness of the structured intermediate layer.
• the intermediate layer is then removed, with the regions 90 of the glass layer 9 which cover the structures 21 of the intermediate layer or which are located on the structured intermediate layer being lifted off as well.
• FIG. 3D shows the substrate after this step, which accordingly now has a glass layer 9 with openings 8 above the contacting areas 71-74 of the surface below.
• the openings 8 can then, as shown in FIG. 3E, be filled with a conductive material 19, for example.
• Layer 11 with conductor structures 111, 112, 113 and passive components 23 are applied, as shown in FIG. 3F.
• the components 23 can comprise, for example, a capacitor, a resistor, a coil, a varistor, a PTC, an NTC, or a filter element.
• Capacitors and coils can in particular also be realized by means of conductor structures of layers lying one above the other and insulated from one another by a vapor deposition glass layer. For example, a conductor structure of the layer 6 and a further conductor structure of the layer 11 lying above it can be used.
• the conductor structures can be applied, for example, by applying a further, negatively structured intermediate layer and the deposition of electrically conductive material, the conductor structures 111, 112, 113 coming into contact with the conductive material 19 in the openings 8, so that an electrical connection is also made , or an electrical contact with the respective associated contacting areas 71 - 74 arises.
• the conductor structures can also have structures with different conductive materials or also semiconductor materials, for example by applying the conductor structures in several steps using different materials. This allows further functionalities to be integrated into the conductor arrangement, for example by creating semiconductor-metal contacts or thermoelectric contacts.
• the conductor structures 19 can be produced by galvanic deposition so that the deposited material, starting from the contacting areas 71-74, first fills the openings 8 and then continues to grow on the surface of the glass layer 9, where it forms the conductor structures, and also, if provided, can form the passive components 23.
• the conductor structures 111, 112, 113 can also be produced by vapor deposition or sputtering, the contacting regions 71-74 and edges of the openings 8 also being able to be vapor-coated or coated, so that the respective conductor structures are in electrical contact with the contacting regions 71-74 come.
• the intermediate layer can then be removed again, wherein conductive material deposited on the intermediate layer is lifted off and the provided conductor structures and possibly applied components also remain on the surface of the glass layer 9.
• Contacting areas by vapor deposition using glass material according to the invention, such as, for example, glass G018-189 on the substrate and the application of conductor structures, can then be repeated to produce further layers of the conductor arrangement.
• a subsequently applied conductor structure is brought into contact with a contact area of a previously applied conductor structure.
• an intermediate layer with structures 21 is again applied to the provided contacting areas 75, 76 of the surface of the coated substrate 1, the contacting areas expediently being applied to applied conductor structures, or else Vias.
• a further insulating glass layer 91 with vias is then produced through openings in the glass layer 91 above the contacting areas 75, 76, the production taking place analogously to the method steps described with reference to FIGS. 3C to 3E.
• FIGS. 3B to 3E show a variant of the method steps of the method according to the invention shown with reference to FIGS. 3B to 3E.
• This variant of the method according to the invention is based on applying a conductive material, which is adjacent to the respective contacting area and which is covered by the structure of the intermediate layer, on the contacting areas before the vapor deposition of the glass layer. This conductive material then forms the via.
• a conductive layer 25 is applied and a photostructurable intermediate layer 27 is applied thereon, as is illustrated with reference to FIG. 4A.
• FIG. 4B shows the substrate after a photolithographic structuring of the intermediate layer 27.
• the layer is structured in such a way that structures 21 remain which cover the contacting areas 71-74 provided.
• the conductive layer 25 is removed from the uncovered regions surrounding the contacting regions 71-74. This can be done in a customary manner, for example by etching. Accordingly, the contacting areas 71-74 are covered by a conductive material which is raised or protrudes from areas adjacent to the respective contacting area and which is covered in each case by a structure 21 of the intermediate layer 27. Then, as shown in FIG.
• the insulating glass layer 9 is evaporated by evaporating glass material according to the invention, the thickness of the glass layer 9 preferably being selected so that it approximately corresponds to the thickness of the raised conductive material 19.
• the structures 21 of the intermediate layer are removed, for example by using a suitable solvent, and the areas 90 of the glass layer 9 which cover the structures 21 are lifted off. In this way, a substrate with a glass layer is obtained, which has openings above the respective contacting areas and plated-through holes in the form of the conductive material located in the openings. This processing state is shown in Fig. 4E.
• the surface of the conductive material and the glass layer 9 are approximately at the same height, so that a flat surface is obtained.
• the method can then be continued as explained with reference to FIGS. 3F to 3G, the second glass layer 91 in FIG. 3G and any further glass layers with plated-through holes also being able to be produced in the same or similar manner as in FIG. 4A until 4E was explained.
• the components 10 are produced by coating substrates in the wafer composite.
• 5 to 7 show various embodiments of coated wafers 2, the components being obtained by separating individual substrates 1 from the wafer.
• FIG. 5 shows an embodiment of the invention in which a semiconductor wafer 2 with a sequence of glass or Conductor layers have been provided. Silicon is preferably used as the wafer material for this purpose, since this material has a temperature expansion coefficient which corresponds very well with the vapor deposition glass.
• the individual substrates 1 are after
• the coating in the wafer assembly and the production of the processing state shown in FIG. 5 are separated by cutting along the intended separating axes 29 in order finally to obtain components 10 with a high-frequency conductor structure.
• the wafer 2 has on a first side 3 individual active semiconductor regions 33 which are connected to connection points 35.
• the conductor arrangement 4 is arranged on a second side 5 of the wafer 2 or the substrates 1 of the wafer 2, which lies opposite the first sides with the active semiconductor regions 33.
• the conductor arrangement 4 is shown in a simplified manner for the sake of clarity, with all conductor structures being designated by reference number 100 here, among other things.
• the individual layers of the conductor arrangement 4 can advantageously be produced as explained with reference to FIGS. 3A to 3G and / or FIGS. 4A to 4E.
• the conductor arrangement 4 shown in FIG. 5 is also made in multiple layers, with the steps of depositing a structured glass layer and applying
• Conductor structures 100 are accordingly carried out several times, and a subsequently applied conductor structure 100 is brought into contact with a contact area of a previously applied conductor structure 100.
• Through-contacts 37 are also inserted into the wafer 2 through the substrates 1, which are electrically connected to the connection points 35.
• the plated-through hole can preferably be produced by etching etching pits in the wafer from the second side 5 to the preferably metallic connection points 35, which simultaneously act as an etching stop.
• a passivation layer 39 is then produced on the walls of the etching pit and the etching pit is filled with conductive material 43.
• the conductive material 43 of the plated-through holes 37, which is exposed on the side 3, serves as a contact area for conductor structures 100 of the conductor arrangement 4.
• Contacting areas are used for some of the conductor structures 100 of the conductor arrangement 4. If these conductor structures 100 are brought into contact with the contacting areas when they are applied to the previously deposited glass layer 9, the conductor structures are accordingly also electrically connected to the connection points 35 on the first side of the substrates 1. In this way, the active semiconductor regions 33 can then be supplied via the conductor arrangement and electrical signals from the active semiconductor regions can be applied to the conductor structures 100 of the conductor arrangement 4.
• FIG. 6 shows a further embodiment of the invention, substrates which have also been connected in the wafer composite being coated with a conductor arrangement 4. This embodiment of the invention is similar to the embodiment shown in FIG. 5.
• a semiconductor wafer 2 with active semiconductor regions 33, which are assigned to individual substrates 1, is also used in the embodiment shown in FIG. 6.
• the connection points 35 of the active semiconductor regions 33 are connected to conductor structures 100.
• conductor arrangement 4 is evaporated on the first side 3 of the substrates 1, on which the active semiconductor regions 33 are also arranged.
• the plated-through holes 15 in the lowermost glass layer 9 of the conductor arrangement 4 are applied directly to the contact points 35, the
• contact points 35 form the contacting areas of the substrates 1 for the corresponding conductor structures 100 on the first glass layer 9.
• the components 10, which are obtained by separating from the coated wafers 2, as are shown by way of example in FIGS. 5 and 6, can be used, for example, as high-frequency transmission / reception modules for frequencies above 10 GHz, in particular for frequencies in the region around 40GHz or higher.
• FIG. 7 shows yet another embodiment of substrates 1 which, according to the invention, have been provided with a high-frequency conductor arrangement 4 in the wafer assembly.
• the conductor arrangement 4 with the glass layers 9, 91, 92, 93, 13 and the conductor structures 100 is here applied to a wafer, the substrates 1 of which are also
• the components 10 with substrates 1 and conductor arrangements 4 serve after the separation from the wafer as a high-frequency rewiring substrate for further components that can be connected to the external contact points of the components 10.
• the external contact points are provided with soldering beads 17, for example, so that further components in SMT technology can be attached and connected.
• the substrates 1 have no active components here.
• the substrate wafer 2 can also be made from insulating material, such as glass or plastic. A particularly well-suited glass as material for the wafer or the substrates 1 of the components 10 is
• Borofloat ® glass which has a thermal expansion coefficient that almost matches the preferred vapor deposition glass.
• Fig. 8 shows that for the characterization of the HF
• the scattering parameters S12 and S21 are also used as transmission loss and the scattering parameters Sll and S22 referred to as reflection loss.
• Attenuation values of less than -2 dB for the scattering parameters S12 and S21 can be recognized on the basis of the measured values shown in FIG. 13 up to a frequency of 50 GHz.
• the scattering parameters S21 and S12 represent the values of the transmission of the electrical signal at the respective frequency. Up to a frequency of 50 GHz can be recognized.
• the linear phase profile of the scattering parameter S21 indicates a very low dispersion up to a frequency of 50GHz.
• the measured values shown with reference to FIGS. 12 to 14 can also be verified during measurements on further samples, the

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• 2003
  • 2003-05-23 CN CNA038118211A patent/CN1656612A/zh active Pending
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