JP5019689B2 - 電流バラスティングｅｓｄ高感度装置のための装置 - Google Patents

電流バラスティングｅｓｄ高感度装置のための装置 Download PDF

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Publication number
JP5019689B2
JP5019689B2 JP2001550813A JP2001550813A JP5019689B2 JP 5019689 B2 JP5019689 B2 JP 5019689B2 JP 2001550813 A JP2001550813 A JP 2001550813A JP 2001550813 A JP2001550813 A JP 2001550813A JP 5019689 B2 JP5019689 B2 JP 5019689B2
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region
connection terminals
cross
esd
conductive strips
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JP2003519926A (ja
JP2003519926A5 (enExample
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クリスチャン， コーネリアス ラス，
コーエン， ジェラード， マリア ヴァーヘージ，
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ソフィックス ビーヴィービーエー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2001550813A 2000-01-04 2001-01-04 電流バラスティングｅｓｄ高感度装置のための装置 Expired - Lifetime JP5019689B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17432600P 2000-01-04 2000-01-04
US60/174,326 2000-01-04
US09/583,141 2000-05-30
US09/583,141 US6587320B1 (en) 2000-01-04 2000-05-30 Apparatus for current ballasting ESD sensitive devices
PCT/US2001/000182 WO2001050533A1 (en) 2000-01-04 2001-01-04 Apparatus for current ballasting esd sensitive devices

Publications (3)

Publication Number Publication Date
JP2003519926A JP2003519926A (ja) 2003-06-24
JP2003519926A5 JP2003519926A5 (enExample) 2011-12-15
JP5019689B2 true JP5019689B2 (ja) 2012-09-05

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JP2001550813A Expired - Lifetime JP5019689B2 (ja) 2000-01-04 2001-01-04 電流バラスティングｅｓｄ高感度装置のための装置

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Country Link
US (1) US6587320B1 (enExample)
EP (1) EP1245048A1 (enExample)
JP (1) JP5019689B2 (enExample)
TW (1) TW488061B (enExample)
WO (1) WO2001050533A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6947268B2 (en) * 2002-02-05 2005-09-20 Oki Electric Industry Co., Ltd. ESD-protecting circuit and LSI using the same
TW560042B (en) * 2002-09-18 2003-11-01 Vanguard Int Semiconduct Corp ESD protection device
US6946720B2 (en) * 2003-02-13 2005-09-20 Intersil Americas Inc. Bipolar transistor for an integrated circuit having variable value emitter ballast resistors
US6927458B2 (en) * 2003-08-08 2005-08-09 Conexant Systems, Inc. Ballasting MOSFETs using staggered and segmented diffusion regions
JP4170210B2 (ja) * 2003-12-19 2008-10-22 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2005209792A (ja) 2004-01-21 2005-08-04 Matsushita Electric Ind Co Ltd 半導体装置
KR100568515B1 (ko) * 2004-12-06 2006-04-07 삼성전자주식회사 저항 소자를 구비한 반도체소자 및 그 제조방법
US20060234399A1 (en) * 2005-04-15 2006-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Meander metal line under the pad for improved device MM ESD performance
DE102005022763B4 (de) * 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
US7646063B1 (en) 2005-06-15 2010-01-12 Pmc-Sierra, Inc. Compact CMOS ESD layout techniques with either fully segmented salicide ballasting (FSSB) in the source and/or drain regions
US7397089B2 (en) * 2005-08-10 2008-07-08 Skyworks Solutions, Inc. ESD protection structure using contact-via chains as ballast resistors
US7595245B2 (en) * 2005-08-12 2009-09-29 Texas Instruments Incorporated Semiconductor device having a gate electrode material feature located adjacent a gate width side of its gate electrode and a method of manufacture therefor
US7709896B2 (en) * 2006-03-08 2010-05-04 Infineon Technologies Ag ESD protection device and method
JP4993941B2 (ja) * 2006-04-27 2012-08-08 パナソニック株式会社 半導体集積回路及びこれを備えたシステムｌｓｉ
US7557413B2 (en) * 2006-11-10 2009-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Serpentine ballasting resistors for multi-finger ESD protection device
US8008747B2 (en) 2008-02-28 2011-08-30 Alpha & Omega Semiconductor, Ltd. High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
US8946942B2 (en) * 2008-03-03 2015-02-03 Alpha And Omega Semiconductor Incorporated Robust semiconductor power devices with design to protect transistor cells with slower switching speed
US8390971B2 (en) 2008-09-11 2013-03-05 Nxp B.V. Protection for an integrated circuit
JP5603089B2 (ja) * 2009-02-23 2014-10-08 セイコーインスツル株式会社 半導体装置
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
JP5886387B2 (ja) * 2009-03-11 2016-03-16 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
JP2011071329A (ja) * 2009-09-25 2011-04-07 Seiko Instruments Inc 半導体装置
US8987778B1 (en) * 2009-12-16 2015-03-24 Maxim Integrated Products, Inc. On-chip electrostatic discharge protection for a semiconductor device
US9293452B1 (en) * 2010-10-01 2016-03-22 Altera Corporation ESD transistor and a method to design the ESD transistor
US8981484B2 (en) * 2011-06-27 2015-03-17 Marvell World Trade Ltd. Ballast resistor for super-high-voltage devices
JP5864216B2 (ja) * 2011-11-04 2016-02-17 ルネサスエレクトロニクス株式会社 半導体装置
US9059168B2 (en) * 2012-02-02 2015-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Adjustable meander line resistor
US8890222B2 (en) 2012-02-03 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Meander line resistor structure
CN103280458B (zh) * 2013-05-17 2015-07-29 电子科技大学 一种集成电路芯片esd防护用mos器件
EP3007224A1 (en) * 2014-10-08 2016-04-13 Nxp B.V. Metallisation for semiconductor device
US9543430B2 (en) 2014-11-03 2017-01-10 Texas Instruments Incorporated Segmented power transistor
US10115718B2 (en) 2016-04-21 2018-10-30 Globalfoundries Inc. Method, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protection
US10461182B1 (en) 2018-06-28 2019-10-29 Texas Instruments Incorporated Drain centered LDMOS transistor with integrated dummy patterns
US11374124B2 (en) 2018-06-28 2022-06-28 Texas Instruments Incorporated Protection of drain extended transistor field oxide
US11152505B2 (en) 2018-06-28 2021-10-19 Texas Instruments Incorporated Drain extended transistor
CN110824181B (zh) * 2019-10-18 2021-10-15 中国航空工业集团公司西安飞行自动控制研究所 一种低电阻敏感器件信号连接方法
CN112289793A (zh) * 2020-09-14 2021-01-29 珠海迈巨微电子有限责任公司 用于电池保护的半导体器件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136359A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体集積回路装置
JPH02105562A (ja) * 1988-10-14 1990-04-18 Nec Corp 半導体集積回路装置
JPH02273971A (ja) * 1989-03-13 1990-11-08 Philips Gloeilampenfab:Nv 保護回路をそなえた半導体デバイス
JPH1050933A (ja) * 1996-08-02 1998-02-20 Nippon Steel Corp 入力保護回路
JPH10242296A (ja) * 1997-02-28 1998-09-11 Nec Corp 半導体装置
JPH1187631A (ja) * 1997-09-09 1999-03-30 Nec Corp 半導体装置
JPH11103021A (ja) * 1997-09-26 1999-04-13 Seiko Instruments Inc 保護回路および保護回路を用いた電子回路

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1380427A (en) 1970-12-07 1975-01-15 Hitachi Ltd Apparatus for scanning the signals applied to an array of semiconduc tor devices
US4306246A (en) 1976-09-29 1981-12-15 Motorola, Inc. Method for trimming active semiconductor devices
DE2852621C4 (de) 1978-12-05 1995-11-30 Siemens Ag Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone
JPH0821632B2 (ja) 1987-01-10 1996-03-04 三菱電機株式会社 半導体集積回路
DE58906972D1 (de) 1988-08-16 1994-03-24 Siemens Ag Bipolartransistor als Schutzelement für integrierte Schaltungen.
US5248892A (en) * 1989-03-13 1993-09-28 U.S. Philips Corporation Semiconductor device provided with a protection circuit
US4930036A (en) 1989-07-13 1990-05-29 Northern Telecom Limited Electrostatic discharge protection circuit for an integrated circuit
DE4003560A1 (de) 1990-02-06 1991-08-08 Siemens Ag Schaltungsanordnung zum schutz von anschluessen integrierter schaltkreise
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
JP3318774B2 (ja) 1992-06-29 2002-08-26 ソニー株式会社 半導体装置および固体撮像装置
US5218222A (en) 1992-09-16 1993-06-08 Micron Semiconductor, Inc. Output ESD protection circuit
US5404041A (en) * 1993-03-31 1995-04-04 Texas Instruments Incorporated Source contact placement for efficient ESD/EOS protection in grounded substrate MOS integrated circuit
US5477414A (en) * 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
TW247368B (en) * 1993-09-29 1995-05-11 Seiko Epuson Co Current regulating semiconductor integrate circuit device and fabrication method of the same
US5498892A (en) 1993-09-29 1996-03-12 Ncr Corporation Lightly doped drain ballast resistor
DE4341170C2 (de) 1993-12-02 2001-05-03 Siemens Ag ESD-Schutzstruktur für integrierte Schaltungen
JPH088441A (ja) 1994-06-23 1996-01-12 Sony Corp デュアルゲート型電界効果トランジスタ
JP2638537B2 (ja) 1995-01-11 1997-08-06 日本電気株式会社 半導体装置
DE19507313C2 (de) 1995-03-02 1996-12-19 Siemens Ag Halbleiterbauelement mit Schutzstruktur zum Schutz vor elektrostatischer Entladung
DE19510777C1 (de) 1995-03-24 1996-06-05 Itt Ind Gmbh Deutsche Verfahren zum Herstellen einer CMOS-Struktur mit ESD-Schutz
US5602409A (en) 1995-07-13 1997-02-11 Analog Devices, Inc. Bidirectional electrical overstress protection circuit for bipolar and bipolar-CMOS integrated circuits
US5654860A (en) 1995-08-16 1997-08-05 Micron Technology, Inc. Well resistor for ESD protection of CMOS circuits
JP3232335B2 (ja) 1995-11-30 2001-11-26 マイクロン・テクノロジー・インコーポレーテッド 半導体チップにおけるｅｓｄ保護用構造
US5637902A (en) 1996-01-16 1997-06-10 Vlsi Technology, Inc. N-well resistor as a ballast resistor for output MOSFET
US5547881A (en) 1996-03-06 1996-08-20 Taiwan Semiconductor Manufacturing Company Ltd Method of forming a resistor for ESD protection in a self aligned silicide process
JP3717227B2 (ja) 1996-03-29 2005-11-16 株式会社ルネサステクノロジ 入力／出力保護回路
US5721439A (en) 1996-04-10 1998-02-24 Winbond Electronics Corporation MOS transistor structure for electro-static discharge protection circuitry
US5744839A (en) 1996-06-11 1998-04-28 Micron Technology, Inc. ESD protection using selective siliciding techniques
KR100188135B1 (en) 1996-06-27 1999-06-01 Samsung Electronics Co Ltd Protection device of semiconductor device
US5763919A (en) 1996-07-08 1998-06-09 Winbond Electronics Corporation MOS transistor structure for electro-static discharge protection circuitry having dispersed parallel paths
TW305071B (en) * 1996-08-14 1997-05-11 Winbond Electronics Corp The MOSFET in electro-static discharge protecting circuit
US5796570A (en) 1996-09-19 1998-08-18 National Semiconductor Corporation Electrostatic discharge protection package
US5793083A (en) 1996-11-25 1998-08-11 Texas Instruments Incorporated Method for designing shallow junction, salicided NMOS transistors with decreased electrostatic discharge sensitivity
TW408465B (en) 1997-01-24 2000-10-11 United Microelectronics Corp The manufacture method of anti-electrostatic discharge device
US5990520A (en) 1997-02-07 1999-11-23 Digital Equipment Corporation Method for fabricating a high performance vertical bipolar NPN or PNP transistor having low base resistance in a standard CMOS process
US5854504A (en) 1997-04-01 1998-12-29 Maxim Integrated Products, Inc. Process tolerant NMOS transistor for electrostatic discharge protection
US5991134A (en) 1997-06-19 1999-11-23 Advanced Micro Devices, Inc. Switchable ESD protective shunting circuit for semiconductor devices
US5834356A (en) 1997-06-27 1998-11-10 Vlsi Technology, Inc. Method of making high resistive structures in salicided process semiconductor devices
JPH1187727A (ja) * 1997-09-12 1999-03-30 Mitsubishi Electric Corp 半導体装置
US6022769A (en) 1997-12-23 2000-02-08 Texas Instruments -- Acer Incorporated Method of making self-aligned silicided MOS transistor with ESD protection improvement
US6028758A (en) 1998-01-16 2000-02-22 Vantis Corporation Electrostatic discharge (ESD) protection for a 5.0 volt compatible input/output (I/O) in a 2.5 volt semiconductor process

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136359A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体集積回路装置
JPH02105562A (ja) * 1988-10-14 1990-04-18 Nec Corp 半導体集積回路装置
JPH02273971A (ja) * 1989-03-13 1990-11-08 Philips Gloeilampenfab:Nv 保護回路をそなえた半導体デバイス
JPH1050933A (ja) * 1996-08-02 1998-02-20 Nippon Steel Corp 入力保護回路
JPH10242296A (ja) * 1997-02-28 1998-09-11 Nec Corp 半導体装置
JPH1187631A (ja) * 1997-09-09 1999-03-30 Nec Corp 半導体装置
JPH11103021A (ja) * 1997-09-26 1999-04-13 Seiko Instruments Inc 保護回路および保護回路を用いた電子回路

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Publication number Publication date
EP1245048A1 (en) 2002-10-02
JP2003519926A (ja) 2003-06-24
WO2001050533A1 (en) 2001-07-12
US6587320B1 (en) 2003-07-01
TW488061B (en) 2002-05-21

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