JP5003033B2 - ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法 - Google Patents

ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法 Download PDF

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JP5003033B2
JP5003033B2 JP2006182118A JP2006182118A JP5003033B2 JP 5003033 B2 JP5003033 B2 JP 5003033B2 JP 2006182118 A JP2006182118 A JP 2006182118A JP 2006182118 A JP2006182118 A JP 2006182118A JP 5003033 B2 JP5003033 B2 JP 5003033B2
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gan
substrate
thin film
bulk crystal
bonded
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JP2008010766A (ja
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仁 笠井
昭広 八郷
祥紀 三浦
勝史 秋田
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2006182118A priority Critical patent/JP5003033B2/ja
Priority to TW096120036A priority patent/TW200818248A/zh
Priority to EP07011175.2A priority patent/EP1873817B1/de
Priority to KR1020070064361A priority patent/KR20080002644A/ko
Priority to US11/819,574 priority patent/US7728348B2/en
Priority to CNB2007101273561A priority patent/CN100573822C/zh
Publication of JP2008010766A publication Critical patent/JP2008010766A/ja
Priority to HK08105764.5A priority patent/HK1117270A1/xx
Priority to US12/765,357 priority patent/US8143140B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
JP2006182118A 2006-06-30 2006-06-30 ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法 Expired - Fee Related JP5003033B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006182118A JP5003033B2 (ja) 2006-06-30 2006-06-30 ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
TW096120036A TW200818248A (en) 2006-06-30 2007-06-05 Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
EP07011175.2A EP1873817B1 (de) 2006-06-30 2007-06-06 Substrat mit darauf aufgetragener GaN-Dünnschicht und Herstellungsverfahren dafür
US11/819,574 US7728348B2 (en) 2006-06-30 2007-06-28 Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
KR1020070064361A KR20080002644A (ko) 2006-06-30 2007-06-28 ＧａＮ 박막 접합 기판 및 그 제조 방법과, ＧａＮ계반도체 디바이스 및 그 제조 방법
CNB2007101273561A CN100573822C (zh) 2006-06-30 2007-07-02 衬底及其制备方法以及半导体器件及其制备方法
HK08105764.5A HK1117270A1 (en) 2006-06-30 2008-05-23 Substrate and method of fabricating the same, and semiconductor device and method of fabricating the same
US12/765,357 US8143140B2 (en) 2006-06-30 2010-04-22 Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006182118A JP5003033B2 (ja) 2006-06-30 2006-06-30 ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法

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JP2008010766A JP2008010766A (ja) 2008-01-17
JP5003033B2 true JP5003033B2 (ja) 2012-08-15

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US (2) US7728348B2 (de)
EP (1) EP1873817B1 (de)
JP (1) JP5003033B2 (de)
KR (1) KR20080002644A (de)
CN (1) CN100573822C (de)
HK (1) HK1117270A1 (de)
TW (1) TW200818248A (de)

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US20100210089A1 (en) 2010-08-19
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