JP4999464B2 - 広いメサを備えた超接合ディバイスの製造方法 - Google Patents
広いメサを備えた超接合ディバイスの製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 81
- 239000002019 doping agent Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 68
- 238000002513 implantation Methods 0.000 claims description 63
- 239000011810 insulating material Substances 0.000 claims description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims 2
- 210000004027 cell Anatomy 0.000 description 70
- 238000005530 etching Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 13
- 239000007943 implant Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 238000009271 trench method Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 210000004897 n-terminal region Anatomy 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XABBWGWLMBYJGI-UHFFFAOYSA-N NPPN Chemical compound NPPN XABBWGWLMBYJGI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Description
図1から図11は、本発明の第1の好ましい実施例によるN形構造体の製造方法を示す。
溝の表面からシリコンの薄層(約100から1,000Å)を除去するため等方性(isotropic)プラズマ・エッチングが用いられる。
犠牲二酸化シリコン層6を溝の表面で成長させ、ついで、バッファ酸化物エッチングあるいは希釈フッ化水素(HF)エッチング等のエッチング法を用いて除去する。
図15は、図16のディバイスを製造するのに用いられる工程の概略を示すフローチャートである。図15に進むと、図1〜図11と同様、この方法は、先ず、N形エピタキシアル層5が上にあるN++基板3から開始する。エッチング工程201が行われ、複数個の溝89が、ほぼ、図14で示されているエピタキシアル再充填物67の個所に、そしてメサ81が図14でカラム69が示されている個所に位置する。工程203では、第1実施例のように、メサ81と溝89とが薄い酸化物層で被覆される。この酸化物層の目的はドーパントが工程中逃げるのを阻止することである。工程204に進んで、N形ドーパントが第1所定打込み角度Φで打込まれ、その後、工程205で、N形ドーパントが、垂直軸に対し第1所定打込み角度Φの負の角度である第2所定打ち込み角度Φ’で打込まれる。次いで、この方法は、工程206に進んで、打込まれたドーパントが拡散され、工程212でエピタキシアル再充填が行われるが、このエピタキシアル再充填物は全ての溝89を充填するものではない。この時点で、エピタキシアル層には、工程207で、P形ドーパントが第1所定打込み角度Φで打込まれ、その後、工程208で、第1所定打込み角度Φの負の角度である第2所定打込み角度Φ’で第2回目のP形ドーパントの打込みを行う。図16では、イオン打込み工程が行われた後の薄いエピタキシアル層83が示されている。その後、工程209で、エピタキシアル再充填があり、工程210では、確実に溝89が充填されて、カラム69がエピタキシアル層で分離されるよう拡散工程が行われる。その後P本体の打込みとセルの形成が工程211でなされる。端子あるいは分離リング16及び18(図14)も形成されるのはこの時点である。
第3実施例の代替例では、NチャネルとPチャネルとが交換できる。再充填材料は、ドープされたあるいはされていない酸化物、窒化物あるいはその他の組み合わせである。N形構造体同様、P形構造体は、MOSFETS、ショットキィ・ディバイス等のディバイスを作製するのに用いられる。図22に示されているように、広いNカラム261が狭い2Pポリ263で区画されており、このカラムは、また、酸化物層165により区画されていて、この酸化物層165はこのカラムを端子領域231から区画させている。Nリング65及び68等のN領域が端子領域231に配置されている。
Claims (20)
- 半導体ディバイスの製造方法であって、
相互に対向する第1主表面及び第2主表面とを有する半導体基板を設け、この半導体基板は、第2主表面に、第1導電型の強くドープされた領域を有し、第1主表面に、第1導電型の軽くドープされた領域を有する、
上記の半導体基板に、複数個の溝と複数個のメサとを形成し、各メサは、隣接する溝と、強くドープされた領域に向け、上記の第1主表面から第1深さ位置迄のびる第1延長部分とを有して、少なくとも1つのメサが第1側壁面と第2側壁面とを有し、複数個の溝の各々は底部を有する、
第2導電型のドーパントを、上記少なくとも1つのメサの第1側壁面に、打ち込み、第2導電型の第1ドープ領域を形成し、
第2導電型のドーパントを、上記少なくとも1つのメサの第2側壁面に打込み、第2導電型の第2ドープ領域を形成し、
打込まれたドーパントを少なくとも1つのメサに拡散させ、
第1導電型のドーパントを上記の少なくとも1つのメサの第1側壁面に打ち込んで第1導電型の第2ドープ領域を第1側壁に設け、そして第1導電型のドーパントを、その第2側壁面に打込み、
打込まれたドーパントを、少なくとも1つのメサに拡散して、第1および第2側壁面に第1導電型の第2ドープ領域を設け、
少なくとも1つ以上のメサに隣接する溝に、半絶縁材料および絶縁材料の1つを充填することからなり、
更に、第1導電率のドーパントを、少なくとも1つのメサの第1側壁面に打込む前に、少なくとも、この少なくとも1つのメサに隣接する溝の底部ならびに上記の第1および第2側壁を含む少なくとも1つのメサの上にテトラエチルオルトシリケート(TEOS)ライナを形成することからなるもの。 - 請求項1に記載の半導体ディバイスの製造方法であって、更に、
第2導電型のドーパントを、少なくとも1つのメサの第1側壁面に打込む前に、少なくとも1つのメサと、少なくとも、この1つ以上のメサに隣接する溝の第1および第2側壁と底部の上に酸化物層を形成することからなるもの。 - 請求項1に記載の半導体ディバイスの製造方法であって、更に、
少なくとも、少なくとも1つのメサに隣接する溝に半絶縁材料および絶縁材料の1つを充填する工程が、少なくとも、上記の少なくとも1つのメサに隣接する溝に、ドープされないポリシリコン、ドープされたポリシリコン、ドープされた酸化物、ドープされない酸化物、窒化ケイ素および半絶縁ポリクリスタリン・シリコン(SIPOS)のうちの少なくとも1つを充填することを含むもの。 - 請求項1に記載の半導体ディバイスの製造方法であって、更に、
第1側壁面が第1主表面に対し、第1所定傾斜角度を維持し、第2側壁面が第1主表面に対し、第2所定傾斜角度を維持するもの。 - 請求項1に記載の半導体ディバイスの製造方法であって、上記の第1および第2側壁面が第2主表面に対して垂直であるもの。
- 請求項1に記載の半導体ディバイスの製造方法であって、複数個の溝が、半導体基板を機械加工するマイクロマシン(MEMS)技術を用いて形成されるもの。
- 半導体ディバイスの製造方法であって、
相互に対向する第1主表面及び第2主表面とを有する半導体基板を設け、この半導体基板は、第2主表面に、第1導電型の強くドープされた領域を有し、第1主表面に、第1導電型の軽くドープされた領域を有し、
複数個の溝と複数個のメサとを形成し、各メサは、隣接する溝と、強くドープされた領域に向け、上記の第1主表面から第1深さ位置迄伸びる第1延長部分とを有し、少なくとも1つのメサは第1側壁面と第2側壁面とを有し、複数個の溝の各々が底部を有し、
第1導電型のドーパントを、上記少なくとも1つのメサの第1側壁面に、打ち込み、第1導電型の第1ドープ領域を形成し、
第1導電型のドーパントを、上記少なくとも1つのメサの第2側壁面に打込み、第1導電型の第2ドープ領域を形成し、
打込まれたドーパントを少なくとも1つのメサに拡散させ、
第2導電型のドーパントを少なくとも1つのメサの第1側壁面に打ち込み、その第1側壁に第2導電型の第2ドープ領域を設け、そして第2導電型のドーパントを、上記少なくとも1つのメサの第2側壁面に打込み、
打込まれたドーパントを少なくとも1つのメサに拡散して、第1および第2側壁に第2導電型の第1ドープ領域を設け、
少なくとも、少なくとも1つのメサに隣接する溝に、半絶縁材料および絶縁材料の1つを充填し、
更に、第2導電型のドーパントを、少なくとも1つのメサの第1側壁面に打込む前に、少なくとも、この1つ以上のメサに隣接する溝の底部ならびに上記の第1および第2側壁を含む少なくとも1つのメサの上にテトラエチルオルトシリケート(TEOS)ライナを形成することからなるもの。 - 請求項7に記載の半導体ディバイスの製造方法であって、更に、
第1導電率のドーパントを、少なくとも1つのメサの第1側壁面に打込む前に、少なくとも、この1つ以上のメサに隣接する溝の底部ならびに上記の第1および第2側壁を含む少なくとも1つのメサの上に酸化物層を形成することからなるもの。 - 請求項7に記載の半導体ディバイスの製造方法であって、更に、
少なくとも、1つ以上のメサに隣接する溝に半絶縁材料および絶縁材料の1つを充填する工程が、少なくとも、上記の1つ以上のメサに隣接する溝に、ドープされないポリシリコン、ドープされたポリシリコン、ドープされた酸化物、ドープされない酸化物、窒化ケイ素および半絶縁ポリクリスタリン・シリコン(SIPOS)のうちの少なくとも1つを充填することを含むもの。 - 請求項7に記載の半導体ディバイスの製造方法であって、更に、
第1側壁面が第1主表面に対し、第1所定傾斜角度を維持し、第2側壁面が第1主表面に対し、第2所定傾斜角度を維持するもの。 - 請求項7に記載の半導体ディバイスの製造方法であって、第1および第2側壁面が第2主表面に対して垂直であるもの。
- 請求項7に記載の半導体ディバイスの製造方法であって、複数個の溝が、半導体基板を機械加工するマイクロマシン(MEMS)技術を用いて形成されるもの。
- 請求項1に記載の半導体ディバイスの製造方法であって、第2導電型のドーパントの第1側壁面への打込みが、第1所定打込み角度で行なわれるもの。
- 請求項1に記載の半導体ディバイスの製造方法であって、第2導電型のドーパントの第2側壁面への打込みが、第2所定打込み角度で行なわれるもの。
- 請求項1に記載の半導体ディバイスの製造方法であって、第1導電型のドーパントの第1側壁面への打込みが、第1所定打込み角度で行なわれるもの。
- 請求項1に記載の半導体ディバイスの製造方法であって、第1導電型のドーパントの第2側壁面への打込みが、第2所定打込み角度で行なわれるもの。
- 請求項7に記載の半導体ディバイスの製造方法であって、第1導電型のドーパントの第1側壁面への打込みが、第1所定打込み角度で行なわれるもの。
- 請求項7に記載の半導体ディバイスの製造方法であって、第1導電型のドーパントの第2側壁面への打込みが、第2所定打込み角度で行なわれるもの。
- 請求項7に記載の半導体ディバイスの製造方法であって、第2導電型のドーパントの第1側壁面への打込みが、第1所定打込み角度で行なわれるもの。
- 請求項7に記載の半導体ディバイスの製造方法であって、第2導電型のドーパントの第2側壁面への打込みが、第2所定打込み角度で行なわれるもの。
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2004
- 2004-12-20 WO PCT/US2004/042548 patent/WO2005060676A2/en active Application Filing
- 2004-12-20 JP JP2006545503A patent/JP4999464B2/ja not_active Expired - Fee Related
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- 2004-12-20 KR KR1020067014532A patent/KR20070029655A/ko not_active Application Discontinuation
- 2004-12-20 TW TW093139614A patent/TWI348219B/zh not_active IP Right Cessation
- 2004-12-20 EP EP04814697A patent/EP1706900A4/en not_active Withdrawn
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WO2005060676A3 (en) | 2006-05-11 |
TWI348219B (en) | 2011-09-01 |
US7364994B2 (en) | 2008-04-29 |
TW200531281A (en) | 2005-09-16 |
KR20070029655A (ko) | 2007-03-14 |
WO2005060676A2 (en) | 2005-07-07 |
EP1706900A2 (en) | 2006-10-04 |
US20060205174A1 (en) | 2006-09-14 |
US20050181564A1 (en) | 2005-08-18 |
JP2007515071A (ja) | 2007-06-07 |
US7052982B2 (en) | 2006-05-30 |
WO2005060676B1 (en) | 2006-07-13 |
EP1706900A4 (en) | 2009-07-22 |
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