JP4970401B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4970401B2
JP4970401B2 JP2008267102A JP2008267102A JP4970401B2 JP 4970401 B2 JP4970401 B2 JP 4970401B2 JP 2008267102 A JP2008267102 A JP 2008267102A JP 2008267102 A JP2008267102 A JP 2008267102A JP 4970401 B2 JP4970401 B2 JP 4970401B2
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JP
Japan
Prior art keywords
lead
semiconductor
semiconductor device
lead frame
mounting region
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Active
Application number
JP2008267102A
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English (en)
Japanese (ja)
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JP2009117819A5 (https=
JP2009117819A (ja
Inventor
善秋 後藤
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Toshiba Corp
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Toshiba Corp
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Priority to JP2008267102A priority Critical patent/JP4970401B2/ja
Publication of JP2009117819A publication Critical patent/JP2009117819A/ja
Publication of JP2009117819A5 publication Critical patent/JP2009117819A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/415—Leadframe inner leads serving as die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/466—Tape carriers or flat leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H10W70/429—Bent parts being the outer leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/433—Shapes or dispositions of deformation-absorbing parts, e.g. leads having meandering shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/334—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
JP2008267102A 2007-10-16 2008-10-16 半導体装置 Active JP4970401B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008267102A JP4970401B2 (ja) 2007-10-16 2008-10-16 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007268775 2007-10-16
JP2007268775 2007-10-16
JP2008267102A JP4970401B2 (ja) 2007-10-16 2008-10-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011136497A Division JP4970610B2 (ja) 2007-10-16 2011-06-20 半導体装置の製造方法とリードフレーム

Publications (3)

Publication Number Publication Date
JP2009117819A JP2009117819A (ja) 2009-05-28
JP2009117819A5 JP2009117819A5 (https=) 2011-02-03
JP4970401B2 true JP4970401B2 (ja) 2012-07-04

Family

ID=40533376

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008267102A Active JP4970401B2 (ja) 2007-10-16 2008-10-16 半導体装置
JP2011136497A Active JP4970610B2 (ja) 2007-10-16 2011-06-20 半導体装置の製造方法とリードフレーム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011136497A Active JP4970610B2 (ja) 2007-10-16 2011-06-20 半導体装置の製造方法とリードフレーム

Country Status (2)

Country Link
US (7) US20090096073A1 (https=)
JP (2) JP4970401B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090096073A1 (en) 2007-10-16 2009-04-16 Kabushiki Kaisha Toshiba Semiconductor device and lead frame used for the same
US8004071B2 (en) * 2007-12-27 2011-08-23 Kabushiki Kaisha Toshiba Semiconductor memory device
JP5275019B2 (ja) * 2008-12-26 2013-08-28 株式会社東芝 半導体装置
JP5361426B2 (ja) 2009-02-05 2013-12-04 株式会社東芝 半導体デバイス
KR101685057B1 (ko) * 2010-01-22 2016-12-09 삼성전자주식회사 반도체 소자의 적층 패키지
JP5032623B2 (ja) * 2010-03-26 2012-09-26 株式会社東芝 半導体記憶装置
JP5924313B2 (ja) * 2012-08-06 2016-05-25 株式会社デンソー ダイオード
JP6680274B2 (ja) * 2017-06-27 2020-04-15 日亜化学工業株式会社 発光装置及び樹脂付リードフレーム

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JP2862557B2 (ja) * 1989-03-20 1999-03-03 宮崎沖電気株式会社 半導体装置
JPH082537B2 (ja) 1989-08-25 1996-01-17 トリニティ工業株式会社 熱処理装置
JPH03136267A (ja) * 1989-10-20 1991-06-11 Texas Instr Japan Ltd 半導体装置及びその製造方法
JPH083929Y2 (ja) * 1989-12-14 1996-01-31 株式会社小糸製作所 車輌用灯具
JPH0395661U (https=) * 1990-01-12 1991-09-30
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US5455454A (en) * 1992-03-28 1995-10-03 Samsung Electronics Co., Ltd. Semiconductor lead frame having a down set support member formed by inwardly extending leads within a central aperture
EP0595021A1 (en) * 1992-10-28 1994-05-04 International Business Machines Corporation Improved lead frame package for electronic devices
JPH06204390A (ja) * 1993-01-07 1994-07-22 Fujitsu Ltd 半導体装置
JPH06244352A (ja) * 1993-02-19 1994-09-02 Shinko Electric Ind Co Ltd リードフレーム及び半導体装置の製造方法
JP3082507B2 (ja) 1993-04-07 2000-08-28 日産自動車株式会社 移動体の画像処理装置
JP3013135B2 (ja) * 1993-11-16 2000-02-28 株式会社三井ハイテック 半導体装置用リードフレームの製造方法
JP2972096B2 (ja) * 1994-11-25 1999-11-08 シャープ株式会社 樹脂封止型半導体装置
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KR100203934B1 (ko) * 1996-02-17 1999-06-15 윤종용 패턴닝된 리드프레임을 이용한 멀티 칩 패키지
JP3078526B2 (ja) * 1998-08-12 2000-08-21 宮崎沖電気株式会社 樹脂封止型半導体装置
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JP3813788B2 (ja) * 2000-04-14 2006-08-23 株式会社ルネサステクノロジ 半導体装置及びその製造方法
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JP3793752B2 (ja) * 2002-12-16 2006-07-05 沖電気工業株式会社 半導体装置
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JP2005268533A (ja) * 2004-03-18 2005-09-29 Shinko Electric Ind Co Ltd 積層型半導体装置
JP4372022B2 (ja) * 2004-04-27 2009-11-25 株式会社東芝 半導体装置
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JP4916745B2 (ja) * 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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US20090096073A1 (en) * 2007-10-16 2009-04-16 Kabushiki Kaisha Toshiba Semiconductor device and lead frame used for the same
JP6164895B2 (ja) * 2013-04-02 2017-07-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9978675B2 (en) * 2015-11-20 2018-05-22 Canon Kabushiki Kaisha Package, electronic component, and electronic apparatus

Also Published As

Publication number Publication date
JP2011181967A (ja) 2011-09-15
US20110260312A1 (en) 2011-10-27
US9589870B2 (en) 2017-03-07
US8618643B2 (en) 2013-12-31
US20200388547A1 (en) 2020-12-10
US10777479B2 (en) 2020-09-15
JP4970610B2 (ja) 2012-07-11
JP2009117819A (ja) 2009-05-28
US20190139849A1 (en) 2019-05-09
US20140077348A1 (en) 2014-03-20
US11688659B2 (en) 2023-06-27
US20160027720A1 (en) 2016-01-28
US10199300B2 (en) 2019-02-05
US20090096073A1 (en) 2009-04-16
US20170154832A1 (en) 2017-06-01
US9177900B2 (en) 2015-11-03

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