JP4963908B2 - ポリッシングパッド - Google Patents
ポリッシングパッド Download PDFInfo
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- JP4963908B2 JP4963908B2 JP2006248420A JP2006248420A JP4963908B2 JP 4963908 B2 JP4963908 B2 JP 4963908B2 JP 2006248420 A JP2006248420 A JP 2006248420A JP 2006248420 A JP2006248420 A JP 2006248420A JP 4963908 B2 JP4963908 B2 JP 4963908B2
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- 238000012545 processing Methods 0.000 claims description 21
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明は、半導体のポリッシングパッドに関し、特に、ケミカルメカニカルポリシング(chemicalmechanical polishing :CMP)及びCMPプロセス中のインシチュウ(in-situ)終点検出に用いるポリッシングパッドに関する。
現代の半導体集積回路(IC)製造のプロセスにおいては、先に形成された層や構造の上に様々な材料の層や構造を形成することが必要となる。しかし、先に形成される際に、プロセス中のウエハの上面の局所構造において、隆起物、高低差のある部分、谷間、溝、及び/又はその他の表面の不均一さが現れ、非常に不均一となることがしばしばである。次の層を形成する際に、これらの不均一さが問題を生じさせる。例えば、先に形成された層の上に細かい幾何的構造をもつフォトリソグラフィのパターンを転写する場合は、フォーカスを非常に浅くする必要がある。従って、表面は平坦で平面的であることが不可欠であり、そうでなければ、パターンの中でフォーカスが合っている部分とそうでない部分とが生じることになる。実際、表面の変動は、25x25mmのダイの上に1000オングストローム未満のオーダーである事が好ましい。更に、主要な処理ステップにおいてこの不均一性をならしておかなければ、ウエハ表面の局所構造が更に不均一となり、その先の処理において積層を重ねる際に更に問題が生じることとなる。用いるダイの種類や幾何的なサイズによっては、この表面の不均一性が、収率やデバイスの性能を悪化させる。従って、IC構造体に何等かの平坦化(プラナリゼーション(planarization))やレベリング(leveling)を行うことが望ましい。実際、多くの高密度ICの製造技術では、製造プロセスにおける重要な局面において、ウエハ表面を平坦化する方法を使用できるようになっている。
CMPプロセスの最中に終点をインシチュウに検出するために、様々な装置や方法が開発されてきた。例えば、超音波の使用と結び付いた装置及び方法や、機械的抵抗、電気的インピーダンスないしウエハ表面温度と結び付いた装置及び方法が用いられてきた。これらの装置や方法は、ウエハやその層の厚さを決定することに依拠し、厚さの変化をモニタすることによりプロセスの終点を確定することに依拠している。ウエハの表面の層が薄くなるようなケースでは、厚さの変化を用いて、表面の層がいつ所望の深さになったかを検出する。また、パターニングを有する表面が不均一なウエハを平坦化するケースでは、厚さの変化をモニタし、表面の不均一度のおよその深さを知ることにより、終点が決定される。厚さの変化が不均一度の深さと等しくなったときに、CMPプロセスが終了する。これらの装置及び方法は、意図していた用途に対してそこそこ良好であったが、更に正確に終点の決定をすることができるシステムがなお必要である。
本発明は、研磨プロセスに関して正確性を向上し更に有用な情報を与えるために用いる事ができる終点の検出器及び方法を目指すものである。本発明の装置及び方法は、CMPプロセスの最中に、除去された材料の厚さ又はウエハ表面の平坦度をインシチュウに決定するための、干渉による技術を採用する。
図2は、本発明の一つの具体例に従って変形されたCMP装置の一部を表している。プラーテン16にはホール(穴)30が形成され、このホールはプラーテンパッド18の上にある。研磨ヘッド12の平行移動的な動きに関係なく、プラーテンが回転している時間の一部の間、研磨ヘッド12によって保持されるウエハ14から見えるように、このホール30の位置が与えられる。レーザー干渉計32は、プラーテン16の下にあって、ホール30がウエハ14に近接した時には、レーザー干渉計32によって投影されるレーザービーム34がプラーテン16のホール30を通過してその上にあるウエハ14の表面に入射するような位置に、固定される。
以上詳細に説明してきたように、本発明の装置及び方法は、CMPプロセスの最中に、除去された材料の厚さ又はウエハ表面の平坦度をインシチュウに決定するための、干渉による技術を採用する。
Claims (6)
- ウエハを研磨する装置において、
表面を有するプラーテンと、
研磨面、前記プラーテンの表面に固定された底面、穴を有する研磨パッドと、
前記穴内に置かれた中空でなくソリッドな前記研磨面より光透過性の高い部分であって、前記光透過性の高い部分の底面は、前記研磨パッドが取り付けられる前記プラーテンの表面により定められた平面より上方に置かれる、前記光透過性の高い部分と、
処理中、前記ウエハを前記研磨パッドに対し保持する研磨ヘッドと、
検出器と、光ビームが少なくとも研磨動作の一部で前記光透過性の高い部分を通過するように配置された光源とを備える光学モニタシステムであって、前記光ビームは前記ウエハに当たり、前記光透過性の高い部分を通って前記検出器まで戻り、インシチュウで研磨処理のモニタが行われる、前記光学モニタシステムと、を備える前記装置。 - 前記光源は、レーザーを備え、前記光ビームは、レーザービームを備える、請求項1に記載の装置。
- 前記プラーテンは、内部に穴を有し、前記光透過性の高い部分は、前記穴の上方に置かれる、請求項1に記載の装置。
- 前記プラーテンは、移動可能であり、前記装置は、更に、前記プラーテンに運動を伝えるモータを備える、請求項1に記載の装置。
- 前記プラーテンは回転可能である、請求項4に記載の装置。
- 前記光透過性の高い部分は、前記研磨パッドに固定されている、請求項1に記載の装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41398295A | 1995-03-28 | 1995-03-28 | |
US08/413982 | 1995-03-28 | ||
US08/605,769 US5964643A (en) | 1995-03-28 | 1996-02-22 | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US08/605769 | 1996-02-22 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003326193A Division JP2004048051A (ja) | 1995-03-28 | 2003-09-18 | ケミカルメカニカルポリシングの操作をインシチュウでモニタするための装置及び方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011168160A Division JP2011249833A (ja) | 1995-03-28 | 2011-08-01 | Cmpプロセス中のインシチュウ終点検出に用いるポリッシングパッド |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007027781A JP2007027781A (ja) | 2007-02-01 |
JP4963908B2 true JP4963908B2 (ja) | 2012-06-27 |
Family
ID=27022372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006248420A Expired - Lifetime JP4963908B2 (ja) | 1995-03-28 | 2006-09-13 | ポリッシングパッド |
Country Status (4)
Country | Link |
---|---|
US (1) | US5964643A (ja) |
EP (2) | EP1419853B1 (ja) |
JP (1) | JP4963908B2 (ja) |
KR (1) | KR100380785B1 (ja) |
Families Citing this family (218)
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US7037403B1 (en) | 1992-12-28 | 2006-05-02 | Applied Materials Inc. | In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization |
US6614529B1 (en) * | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US6537133B1 (en) * | 1995-03-28 | 2003-03-25 | Applied Materials, Inc. | Method for in-situ endpoint detection for chemical mechanical polishing operations |
US6876454B1 (en) * | 1995-03-28 | 2005-04-05 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
JP3431115B2 (ja) * | 1995-03-28 | 2003-07-28 | アプライド マテリアルズ インコーポレイテッド | ケミカルメカニカルポリシングの操作をインシチュウでモニタするための装置及び方法 |
US6676717B1 (en) * | 1995-03-28 | 2004-01-13 | Applied Materials Inc | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
IL113829A (en) * | 1995-05-23 | 2000-12-06 | Nova Measuring Instr Ltd | Apparatus for optical inspection of wafers during polishing |
US7169015B2 (en) * | 1995-05-23 | 2007-01-30 | Nova Measuring Instruments Ltd. | Apparatus for optical inspection of wafers during processing |
US20070123151A1 (en) * | 1995-05-23 | 2007-05-31 | Nova Measuring Instruments Ltd | Apparatus for optical inspection of wafers during polishing |
US6102775A (en) * | 1997-04-18 | 2000-08-15 | Nikon Corporation | Film inspection method |
US6489624B1 (en) * | 1997-07-18 | 2002-12-03 | Nikon Corporation | Apparatus and methods for detecting thickness of a patterned layer |
US6332470B1 (en) | 1997-12-30 | 2001-12-25 | Boris Fishkin | Aerosol substrate cleaner |
US6271047B1 (en) | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
US6352466B1 (en) * | 1998-08-31 | 2002-03-05 | Micron Technology, Inc. | Method and apparatus for wireless transfer of chemical-mechanical planarization measurements |
US6280289B1 (en) * | 1998-11-02 | 2001-08-28 | Applied Materials, Inc. | Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers |
JP4484370B2 (ja) | 1998-11-02 | 2010-06-16 | アプライド マテリアルズ インコーポレイテッド | 基板上のメタル層の化学機械研磨に関して終点を決定するための方法及び基板のメタル層を研磨するための装置 |
US6159073A (en) | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
US20040082271A1 (en) * | 1999-01-25 | 2004-04-29 | Wiswesser Andreas Norbert | Polishing pad with window |
US6994607B2 (en) * | 2001-12-28 | 2006-02-07 | Applied Materials, Inc. | Polishing pad with window |
US6190234B1 (en) | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
US6247998B1 (en) * | 1999-01-25 | 2001-06-19 | Applied Materials, Inc. | Method and apparatus for determining substrate layer thickness during chemical mechanical polishing |
US6179709B1 (en) * | 1999-02-04 | 2001-01-30 | Applied Materials, Inc. | In-situ monitoring of linear substrate polishing operations |
JP2000269173A (ja) | 1999-03-17 | 2000-09-29 | Toshiba Corp | 半導体研磨装置及び半導体研磨方法 |
EP1176630B1 (en) * | 1999-03-31 | 2007-06-27 | Nikon Corporation | Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device |
US6213846B1 (en) * | 1999-07-12 | 2001-04-10 | International Business Machines Corporation | Real-time control of chemical-mechanical polishing processes using a shaft distortion measurement |
JP3867844B2 (ja) * | 1999-08-27 | 2007-01-17 | 旭化成エレクトロニクス株式会社 | 研磨パッドおよび研磨装置 |
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- 1996-03-28 KR KR1019960008699A patent/KR100380785B1/ko not_active IP Right Cessation
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2006
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KR100380785B1 (ko) | 2003-08-02 |
KR960035865A (ko) | 1996-10-28 |
EP1419853A1 (en) | 2004-05-19 |
EP1419853B1 (en) | 2006-02-15 |
JP2007027781A (ja) | 2007-02-01 |
US5964643A (en) | 1999-10-12 |
EP1108501B1 (en) | 2004-05-12 |
EP1108501A2 (en) | 2001-06-20 |
EP1108501A3 (en) | 2001-12-05 |
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