KR100627202B1 - 화학 기계 연마용 패드 및 화학 기계 연마 방법 - Google Patents
화학 기계 연마용 패드 및 화학 기계 연마 방법 Download PDFInfo
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- KR100627202B1 KR100627202B1 KR1020040055662A KR20040055662A KR100627202B1 KR 100627202 B1 KR100627202 B1 KR 100627202B1 KR 1020040055662 A KR1020040055662 A KR 1020040055662A KR 20040055662 A KR20040055662 A KR 20040055662A KR 100627202 B1 KR100627202 B1 KR 100627202B1
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- South Korea
- Prior art keywords
- polishing
- chemical mechanical
- mechanical polishing
- polishing pad
- light transmitting
- Prior art date
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
Claims (8)
- 수불용성 매트릭스와 이 수불용성 매트릭스 재료에 분산된 수용성 입자를 포함하고,연마 표면과 이 연마 표면의 이면에 있는 비-연마 표면을 가지고,연마 표면으로부터 비-연마 표면으로 광학적으로 통하는 광 투과 영역을 가지며, 여기서 상기 수용성 입자의 양이 상기 수불용성 매트릭스 및 수용성 입자의 총량을 100 부피%로 하여 0.1 내지 5 부피%이고, 광 투과 영역의 비-연마 표면의 표면 조도 (Ra)가 10 ㎛ 이하인 화학 기계 연마용 패드.
- 제1항에 있어서, 광 투과 영역에 더하여, 광 투과 영역보다 더 낮은 투광성을 지닌 약한 광 투과 영역을 가지며, 광 투과 영역이 약한 광 투과 영역에 의해 둘러싸여 있는 화학 기계 연마용 패드.
- 제2항에 있어서, 광 투과 영역이 비-연마면 상의 약한 광 투과 영역에 함몰되어, 광 투과 영역이 약한 광 투과 영역보다 더 박막화된 것인 화학 기계 연마용 패드.
- 제1항의 화학 기계 연마용 패드와 상기 패드의 비-연마 표면 상에 형성된 기저층을 포함하며, 기저층이 두께 방향으로 연장된 광 투과 영역을 갖고 광 투과 영역이 화학 기계 연마용 패드의 광 투과 영역과 광학적으로 통하는 것인 화학 기계 연마용 적층 패드.
- 제1항에 있어서, 광학적 종점 (end-point) 검출기를 구비한 화학 기계 연마 장치에 사용되는 화학 기계 연마용 패드.
- 제4항에 있어서, 광학적 종점 검출기를 구비한 화학 기계 연마 장치에 사용되는 화학 기계 연마용 적층 패드.
- 광학적 종점 검출기를 이용하여 화학 기계 연마의 종점을 검출하는 것을 포함하는, 제1항의 화학 기계 연마용 패드를 사용하는 화학 기계 연마 방법.
- 광학적 종점 검출기를 이용하여 화학 기계 연마의 종점을 검출하는 것을 포함하는, 제4항의 화학 기계 연마용 적층 패드를 사용하는 화학 기계 연마 방법.
Applications Claiming Priority (2)
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JP2003275740 | 2003-07-17 | ||
JPJP-P-2003-00275740 | 2003-07-17 |
Publications (2)
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KR20050009240A KR20050009240A (ko) | 2005-01-24 |
KR100627202B1 true KR100627202B1 (ko) | 2006-09-25 |
Family
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KR1020040055662A KR100627202B1 (ko) | 2003-07-17 | 2004-07-16 | 화학 기계 연마용 패드 및 화학 기계 연마 방법 |
Country Status (5)
Country | Link |
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US (1) | US7183213B2 (ko) |
EP (1) | EP1498222B1 (ko) |
KR (1) | KR100627202B1 (ko) |
CN (1) | CN100352605C (ko) |
TW (1) | TWI290504B (ko) |
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EP1466699A1 (en) * | 2003-04-09 | 2004-10-13 | JSR Corporation | Abrasive pad, method and metal mold for manufacturing the same, and semiconductor wafer polishing method |
CN100352605C (zh) | 2003-07-17 | 2007-12-05 | Jsr株式会社 | 化学机械抛光垫以及化学机械抛光方法 |
EP1739729B1 (en) * | 2004-04-23 | 2012-03-28 | JSR Corporation | Polishing pad for semiconductor wafer, polishing multilayered body for semiconductor wafer having same, and method for polishing semiconductor wafer |
TW200709892A (en) * | 2005-08-18 | 2007-03-16 | Rohm & Haas Elect Mat | Transparent polishing pad |
TWI378844B (en) * | 2005-08-18 | 2012-12-11 | Rohm & Haas Elect Mat | Polishing pad and method of manufacture |
US7312154B2 (en) * | 2005-12-20 | 2007-12-25 | Corning Incorporated | Method of polishing a semiconductor-on-insulator structure |
JP4931133B2 (ja) * | 2007-03-15 | 2012-05-16 | 東洋ゴム工業株式会社 | 研磨パッド |
US7530887B2 (en) * | 2007-08-16 | 2009-05-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with controlled wetting |
US7758403B2 (en) * | 2007-11-16 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | System, method and apparatus for lapping workpieces with soluble abrasives |
EP2083027B8 (en) * | 2008-01-24 | 2012-05-16 | JSR Corporation | Mechanical polishing pad and chemical mechanical polishing method |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
KR101267982B1 (ko) * | 2011-12-13 | 2013-05-27 | 삼성코닝정밀소재 주식회사 | 반도체 기판의 연마방법 및 반도체 기판의 연마장치 |
US9156125B2 (en) | 2012-04-11 | 2015-10-13 | Cabot Microelectronics Corporation | Polishing pad with light-stable light-transmitting region |
US9597769B2 (en) * | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
CN103158057B (zh) * | 2013-03-06 | 2016-02-17 | 中国科学院上海微系统与信息技术研究所 | 确定相变材料的化学机械抛光停止点的方法及检测系统 |
US9446497B2 (en) * | 2013-03-07 | 2016-09-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Broad spectrum, endpoint detection monophase olefin copolymer window with specific composition in multilayer chemical mechanical polishing pad |
US20140256231A1 (en) * | 2013-03-07 | 2014-09-11 | Dow Global Technologies Llc | Multilayer Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window |
US20140370788A1 (en) * | 2013-06-13 | 2014-12-18 | Cabot Microelectronics Corporation | Low surface roughness polishing pad |
JP6010511B2 (ja) * | 2013-08-22 | 2016-10-19 | 株式会社荏原製作所 | 研磨パッドの表面粗さ測定方法 |
CA174231S (en) | 2016-10-21 | 2018-07-10 | 3M Innovative Properties Co | Floor polishing disc |
CN108838745B (zh) * | 2018-06-27 | 2019-08-13 | 大连理工大学 | 一种钇铝石榴石晶体的高效化学机械抛光方法 |
US20220023991A1 (en) * | 2018-11-27 | 2022-01-27 | 3M Innovative Properties Company | Polishing pads and systems and methods of making and using the same |
US11298794B2 (en) * | 2019-03-08 | 2022-04-12 | Applied Materials, Inc. | Chemical mechanical polishing using time share control |
CN113579993B (zh) * | 2021-07-30 | 2023-02-24 | 河南科技学院 | 一种化学机械抛光垫及其制备方法和应用 |
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- 2004-07-16 CN CNB200410064056XA patent/CN100352605C/zh not_active Expired - Fee Related
- 2004-07-16 KR KR1020040055662A patent/KR100627202B1/ko active IP Right Grant
- 2004-07-16 US US10/892,096 patent/US7183213B2/en active Active
- 2004-07-16 TW TW093121392A patent/TWI290504B/zh not_active IP Right Cessation
- 2004-07-16 EP EP04016806.4A patent/EP1498222B1/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
TW200518876A (en) | 2005-06-16 |
KR20050009240A (ko) | 2005-01-24 |
TWI290504B (en) | 2007-12-01 |
CN1590026A (zh) | 2005-03-09 |
EP1498222A1 (en) | 2005-01-19 |
US20050014376A1 (en) | 2005-01-20 |
US7183213B2 (en) | 2007-02-27 |
EP1498222B1 (en) | 2014-12-17 |
CN100352605C (zh) | 2007-12-05 |
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