JP4943629B2 - ターゲット修復用のイオンビーム - Google Patents

ターゲット修復用のイオンビーム Download PDF

Info

Publication number
JP4943629B2
JP4943629B2 JP2003396297A JP2003396297A JP4943629B2 JP 4943629 B2 JP4943629 B2 JP 4943629B2 JP 2003396297 A JP2003396297 A JP 2003396297A JP 2003396297 A JP2003396297 A JP 2003396297A JP 4943629 B2 JP4943629 B2 JP 4943629B2
Authority
JP
Japan
Prior art keywords
charged particle
substrate
particle beam
alignment mark
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003396297A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004179165A5 (enExample
JP2004179165A (ja
Inventor
ブライアン・ミラー
Original Assignee
エフ・イ−・アイ・カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エフ・イ−・アイ・カンパニー filed Critical エフ・イ−・アイ・カンパニー
Publication of JP2004179165A publication Critical patent/JP2004179165A/ja
Publication of JP2004179165A5 publication Critical patent/JP2004179165A5/ja
Application granted granted Critical
Publication of JP4943629B2 publication Critical patent/JP4943629B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0614—Marking devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/101—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/507—Located in dummy chips or in reference chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/603—Formed on wafers or substrates before dicing and remaining on chips after dicing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2003396297A 2002-11-26 2003-11-26 ターゲット修復用のイオンビーム Expired - Fee Related JP4943629B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42913502P 2002-11-26 2002-11-26
US60/429,135 2002-11-26

Publications (3)

Publication Number Publication Date
JP2004179165A JP2004179165A (ja) 2004-06-24
JP2004179165A5 JP2004179165A5 (enExample) 2007-01-11
JP4943629B2 true JP4943629B2 (ja) 2012-05-30

Family

ID=32298306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003396297A Expired - Fee Related JP4943629B2 (ja) 2002-11-26 2003-11-26 ターゲット修復用のイオンビーム

Country Status (3)

Country Link
US (1) US7150811B2 (enExample)
EP (1) EP1424723B1 (enExample)
JP (1) JP4943629B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100898924B1 (ko) * 2002-10-24 2009-05-26 엘지전자 주식회사 초소형 렌즈의 비구면 가공방법 및 그를 이용한 초소형렌즈의제조방법
US20050186753A1 (en) * 2004-02-25 2005-08-25 Ping-Hsu Chen FIB exposure of alignment marks in MIM technology
JP4405865B2 (ja) * 2004-06-24 2010-01-27 富士通マイクロエレクトロニクス株式会社 多層配線構造の製造方法及びｆｉｂ装置
JP5254613B2 (ja) * 2004-08-24 2013-08-07 セラ セミコンダクター エンジニアリング ラボラトリーズ リミテッド 被加工物の有向多偏向イオンビームミリングならびにその程度の決定および制御
JP4216263B2 (ja) * 2005-03-09 2009-01-28 シャープ株式会社 製造検査解析システム、および製造検査解析方法
FR2884045A1 (fr) * 2005-03-29 2006-10-06 St Microelectronics Sa Identification d'un circuit integre de reference pour equipement de prise et pose
DE102008000709B3 (de) * 2008-03-17 2009-11-26 Carl Zeiss Smt Ag Reinigungsmodul, EUV-Lithographievorrichtung und Verfahren zu seiner Reinigung
KR101470267B1 (ko) 2010-11-05 2014-12-05 가부시키가이샤 히다치 하이테크놀로지즈 이온 밀링 장치
US9190261B2 (en) * 2011-08-25 2015-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Layer alignment in FinFET fabrication
EP2787523B1 (en) * 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
WO2016121079A1 (ja) * 2015-01-30 2016-08-04 株式会社 日立ハイテクノロジーズ イオンミリング装置を備えた電子顕微鏡、および三次元再構築方法
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
ES3010110B2 (es) * 2023-09-29 2025-12-18 Consejo Superior Investigacion Sistema de fabricacion de contactos electricos y metodo de fabricacion asociado

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699334A (en) * 1969-06-16 1972-10-17 Kollsman Instr Corp Apparatus using a beam of positive ions for controlled erosion of surfaces
US3860783A (en) 1970-10-19 1975-01-14 Bell Telephone Labor Inc Ion etching through a pattern mask
DE2603675A1 (de) 1976-01-31 1977-08-04 Leybold Heraeus Gmbh & Co Kg Verfahren zur kontrolle des abtragens einer duennen schicht oder durch masken bestimmter schichtbereiche mit hilfe des ionen-aetzens
JPS5562734A (en) 1978-11-01 1980-05-12 Toshiba Corp Ion source and ion etching method
JPS5694630A (en) * 1979-12-27 1981-07-31 Nec Corp Etching method using ion-beam
JPS56107555A (en) * 1980-01-29 1981-08-26 Nec Corp Detection of position of electron beam
US4490210A (en) 1984-01-24 1984-12-25 International Business Machines Corporation Laser induced dry chemical etching of metals
JPH01225772A (ja) * 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> イオンビームスパッタ装置
US5643472A (en) 1988-07-08 1997-07-01 Cauldron Limited Partnership Selective removal of material by irradiation
US5018164A (en) 1989-09-12 1991-05-21 Hughes Aircraft Company Excimer laser ablation method and apparatus for microcircuit fabrication
US4975141A (en) 1990-03-30 1990-12-04 International Business Machines Corporation Laser ablation for plasma etching endpoint detection
EP0477154B1 (en) 1990-09-04 1994-03-09 Lift And Go Products Aktiebolag Load handling device with extendable load engaging members
JPH053143A (ja) 1991-04-19 1993-01-08 Hitachi Ltd 位置合せ方法および装置
JP3349519B2 (ja) * 1992-02-04 2002-11-25 株式会社日立製作所 スパッタ装置
US5807650A (en) * 1992-03-24 1998-09-15 Kabushiki Kaisha Toshiba Photo mask and apparatus for repairing photo mask
JP3117836B2 (ja) * 1993-03-02 2000-12-18 セイコーインスツルメンツ株式会社 集束イオンビーム装置
US5504340A (en) * 1993-03-10 1996-04-02 Hitachi, Ltd. Process method and apparatus using focused ion beam generating means
US5483037A (en) 1993-12-01 1996-01-09 Martin Marietta Energy Systems, Inc. Multiple target laser ablation system
US5456756A (en) 1994-09-02 1995-10-10 Advanced Micro Devices, Inc. Holding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor wafer
US5952247A (en) 1994-11-23 1999-09-14 Intel Corporation Method of accessing the circuitry on a semiconductor substrate from the bottom of the semiconductor substrate
US6057525A (en) 1995-09-05 2000-05-02 United States Enrichment Corporation Method and apparatus for precision laser micromachining
TW350095B (en) 1995-11-21 1999-01-11 Daido Hoxan Inc Cutting method and apparatus for semiconductor materials
AU4993797A (en) 1996-11-08 1998-05-29 W.L. Gore & Associates, Inc. Method for using fiducial schemes to increase nominal registration
US5911108A (en) 1997-01-29 1999-06-08 Integrated Device Technology, Inc. Method for protecting an alignment mark on a semiconductor substrate during chemical mechanical polishing and the resulting structure
US5738961A (en) 1997-03-03 1998-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Two-step photolithography method for aligning and patterning non-transparent layers
US6083841A (en) 1997-05-15 2000-07-04 Rohm Co., Ltd. Method of etching gallium-nitride based compound semiconductor layer and method of manufacturing semiconductor light emitting device utilizing the same
JPH11238209A (ja) * 1998-02-23 1999-08-31 Yamaha Corp 薄膜磁気ヘッドの製造方法
JP2000021978A (ja) 1998-07-03 2000-01-21 Mitsubishi Electric Corp フォトマスクおよびパターン形成方法
JP2000035390A (ja) * 1998-07-16 2000-02-02 Seiko Instruments Inc 薄片化加工方法
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US6288773B2 (en) 1998-12-11 2001-09-11 Lsi Logic Corporation Method and apparatus for removing residual material from an alignment mark of a semiconductor wafer
US6440615B1 (en) * 1999-02-09 2002-08-27 Nikon Corporation Method of repairing a mask with high electron scattering and low electron absorption properties
US6277659B1 (en) 1999-09-29 2001-08-21 Advanced Micro Devices, Inc. Substrate removal using thermal analysis
US6261918B1 (en) 1999-10-04 2001-07-17 Conexant Systems, Inc. Method for creating and preserving alignment marks for aligning mask layers in integrated circuit manufacture
US6281471B1 (en) 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material
US6552301B2 (en) 2000-01-25 2003-04-22 Peter R. Herman Burst-ultrafast laser machining method
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
JP2001345360A (ja) * 2000-06-01 2001-12-14 Hitachi Ltd 検査・解析方法および試料作製装置
JP4178741B2 (ja) * 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
JP4354657B2 (ja) * 2001-01-11 2009-10-28 エスアイアイ・ナノテクノロジー株式会社 集束イオンビーム装置
JP4127601B2 (ja) * 2001-03-09 2008-07-30 株式会社東芝 レーザ加工装置
WO2002075806A1 (en) * 2001-03-16 2002-09-26 Hitachi, Ltd. Method for inspecting wafer, focused ion beam apparatus and transmission electron beam apparatus
JP2002280295A (ja) * 2001-03-22 2002-09-27 Sony Corp 半導体素子の製造方法および撮像素子の製造方法
US20030138709A1 (en) * 2001-11-09 2003-07-24 Burbank Daniel P. Wafer fabrication having improved laserwise alignment recovery

Also Published As

Publication number Publication date
EP1424723B1 (en) 2015-01-07
EP1424723A3 (en) 2009-08-05
US20040099638A1 (en) 2004-05-27
US7150811B2 (en) 2006-12-19
JP2004179165A (ja) 2004-06-24
EP1424723A2 (en) 2004-06-02

Similar Documents

Publication Publication Date Title
US7504182B2 (en) Photolithography mask repair
US6753538B2 (en) Electron beam processing
EP1261752B1 (en) Method for repairing lithography masks using a charged particle beam system
US6897157B2 (en) Method of repairing an opaque defect on a mask with electron beam-induced chemical etching
JP5090255B2 (ja) 原位置でのｓｔｅｍサンプル作製方法
JP4943629B2 (ja) ターゲット修復用のイオンビーム
JPH053143A (ja) 位置合せ方法および装置
US7256405B2 (en) Sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method
EP0320292B1 (en) A process for forming a pattern
US6030731A (en) Method for removing the carbon halo caused by FIB clear defect repair of a photomask
WO2024104605A1 (en) Improved editing of deep, multi-layered structures
WO2023181882A1 (ja) 分析方法、分析装置、薬液の管理方法及びレジスト組成物の管理方法
US6251543B1 (en) Process for fabricating a projection electron lithography mask and a removable reusable cover for use therein
JP2888228B2 (ja) 荷電粒子線用部分一括マスクの構造
US9581893B2 (en) Mask manufacturing method, mask substrate, and charged beam drawing method
JP2002184689A (ja) 電子ビーム近接露光装置
JP2003332226A (ja) マスクの欠陥修正方法およびマスクの製造方法
JP2003168384A (ja) 電子線装置及び該装置を用いたデバイス製造方法
JP2005136284A (ja) 露光方法及び露光装置

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060510

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061121

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090915

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20091215

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20091218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100126

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100420

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100423

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100525

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100608

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100908

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100913

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100915

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20110912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120228

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120301

R150 Certificate of patent or registration of utility model

Ref document number: 4943629

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150309

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees