JP4916671B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4916671B2
JP4916671B2 JP2005104984A JP2005104984A JP4916671B2 JP 4916671 B2 JP4916671 B2 JP 4916671B2 JP 2005104984 A JP2005104984 A JP 2005104984A JP 2005104984 A JP2005104984 A JP 2005104984A JP 4916671 B2 JP4916671 B2 JP 4916671B2
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Japan
Prior art keywords
layer
gan
opening
based semiconductor
electron
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Expired - Fee Related
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JP2005104984A
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English (en)
Japanese (ja)
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JP2006286942A (ja
JP2006286942A5 (enExample
Inventor
健 中田
健 川崎
誠司 八重樫
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2005104984A priority Critical patent/JP4916671B2/ja
Priority to US11/392,639 priority patent/US7592647B2/en
Publication of JP2006286942A publication Critical patent/JP2006286942A/ja
Publication of JP2006286942A5 publication Critical patent/JP2006286942A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
JP2005104984A 2005-03-31 2005-03-31 半導体装置 Expired - Fee Related JP4916671B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005104984A JP4916671B2 (ja) 2005-03-31 2005-03-31 半導体装置
US11/392,639 US7592647B2 (en) 2005-03-31 2006-03-30 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005104984A JP4916671B2 (ja) 2005-03-31 2005-03-31 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011266051A Division JP5458084B2 (ja) 2011-12-05 2011-12-05 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006286942A JP2006286942A (ja) 2006-10-19
JP2006286942A5 JP2006286942A5 (enExample) 2008-05-15
JP4916671B2 true JP4916671B2 (ja) 2012-04-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005104984A Expired - Fee Related JP4916671B2 (ja) 2005-03-31 2005-03-31 半導体装置

Country Status (2)

Country Link
US (1) US7592647B2 (enExample)
JP (1) JP4916671B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11990542B2 (en) 2018-12-27 2024-05-21 Panasonic Holdings Corporation Nitride semiconductor device

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JP2010098141A (ja) * 2008-10-16 2010-04-30 Sumitomo Electric Device Innovations Inc 半導体装置の製造方法
JP5533661B2 (ja) 2008-10-29 2014-06-25 富士通株式会社 化合物半導体装置及びその製造方法
JP5496635B2 (ja) * 2008-12-19 2014-05-21 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
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JP2012094688A (ja) * 2010-10-27 2012-05-17 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11990542B2 (en) 2018-12-27 2024-05-21 Panasonic Holdings Corporation Nitride semiconductor device
US12328894B2 (en) 2018-12-27 2025-06-10 Panasonic Holdings Corporation Nitride semiconductor device

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US7592647B2 (en) 2009-09-22
US20060220060A1 (en) 2006-10-05

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