JP4912604B2 - 窒化物半導体ｈｅｍｔおよびその製造方法。 - Google Patents

窒化物半導体ｈｅｍｔおよびその製造方法。 Download PDF

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JP4912604B2
JP4912604B2 JP2005096902A JP2005096902A JP4912604B2 JP 4912604 B2 JP4912604 B2 JP 4912604B2 JP 2005096902 A JP2005096902 A JP 2005096902A JP 2005096902 A JP2005096902 A JP 2005096902A JP 4912604 B2 JP4912604 B2 JP 4912604B2
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layer
silicon
gan
insulating film
gate electrode
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JP2006278812A (ja
JP2006278812A5 (enExample
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俊介 倉知
務 駒谷
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2005096902A priority Critical patent/JP4912604B2/ja
Priority to EP06251792.5A priority patent/EP1708259B8/en
Priority to US11/392,785 priority patent/US8178900B2/en
Publication of JP2006278812A publication Critical patent/JP2006278812A/ja
Publication of JP2006278812A5 publication Critical patent/JP2006278812A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

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  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005096902A 2005-03-30 2005-03-30 窒化物半導体ｈｅｍｔおよびその製造方法。 Expired - Lifetime JP4912604B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005096902A JP4912604B2 (ja) 2005-03-30 2005-03-30 窒化物半導体ｈｅｍｔおよびその製造方法。
EP06251792.5A EP1708259B8 (en) 2005-03-30 2006-03-30 Semiconductor device having GaN-based semiconductor layer
US11/392,785 US8178900B2 (en) 2005-03-30 2006-03-30 Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005096902A JP4912604B2 (ja) 2005-03-30 2005-03-30 窒化物半導体ｈｅｍｔおよびその製造方法。

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JP2006278812A5 JP2006278812A5 (enExample) 2008-04-24
JP4912604B2 true JP4912604B2 (ja) 2012-04-11

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US (1) US8178900B2 (enExample)
EP (1) EP1708259B8 (enExample)
JP (1) JP4912604B2 (enExample)

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US20090321787A1 (en) * 2007-03-20 2009-12-31 Velox Semiconductor Corporation High voltage GaN-based heterojunction transistor structure and method of forming same
US7939853B2 (en) * 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
JP5420157B2 (ja) * 2007-06-08 2014-02-19 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP4963455B2 (ja) * 2007-09-04 2012-06-27 国立大学法人北海道大学 半導体基板の表面に絶縁膜を形成する方法と装置
US7915643B2 (en) 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
JP5069531B2 (ja) * 2007-09-28 2012-11-07 富士フイルム株式会社 窒化シリコン膜の形成方法
US8093136B2 (en) * 2007-12-28 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5345328B2 (ja) 2008-02-22 2013-11-20 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP2009239230A (ja) * 2008-03-28 2009-10-15 Fujitsu Ltd 半導体装置及びその製造方法
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8289065B2 (en) * 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
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US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
JP5306438B2 (ja) * 2011-11-14 2013-10-02 シャープ株式会社 電界効果トランジスタおよびその製造方法
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
JP5957994B2 (ja) * 2012-03-16 2016-07-27 富士通株式会社 半導体装置の製造方法
JP6025242B2 (ja) * 2012-03-30 2016-11-16 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
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JP2014029908A (ja) * 2012-07-31 2014-02-13 Toyota Central R&D Labs Inc 半導体装置および半導体装置の製造方法
JP6145985B2 (ja) * 2012-10-09 2017-06-14 日亜化学工業株式会社 電界効果トランジスタ
JP6106908B2 (ja) 2012-12-21 2017-04-05 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP6093190B2 (ja) * 2013-01-18 2017-03-08 住友電気工業株式会社 Ｍｉｓ構造トランジスタ、及びｍｉｓ構造トランジスタを作製する方法
CN105164811B (zh) 2013-02-15 2018-08-31 创世舫电子有限公司 半导体器件的电极及其形成方法
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US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
JP6627441B2 (ja) * 2015-11-11 2020-01-08 住友電気工業株式会社 半導体装置
JP6107922B2 (ja) * 2015-11-30 2017-04-05 富士通株式会社 半導体装置
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
TWI762486B (zh) 2016-05-31 2022-05-01 美商創世舫科技有限公司 包含漸變空乏層的三族氮化物裝置
JP6640687B2 (ja) * 2016-09-09 2020-02-05 株式会社東芝 半導体装置
JP6885710B2 (ja) * 2016-11-16 2021-06-16 株式会社アドバンテスト 化合物半導体装置およびその製造方法
US10741494B2 (en) * 2018-11-07 2020-08-11 Semiconductor Components Industries, Llc Electronic device including a contact structure contacting a layer
CN112382662B (zh) * 2020-11-13 2022-06-21 宁波铼微半导体有限公司 氮化镓增强型器件及其制造方法

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Publication number Priority date Publication date Assignee Title
US9893210B2 (en) 2015-09-24 2018-02-13 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same
DE102016217862B4 (de) 2015-09-24 2022-09-01 Mitsubishi Electric Corporation Halbleiteranordnung und Verfahren zum Herstellen einer Halbleiteranordnung

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EP1708259A3 (en) 2008-05-28
US20060220063A1 (en) 2006-10-05
US8178900B2 (en) 2012-05-15
JP2006278812A (ja) 2006-10-12
EP1708259B8 (en) 2015-01-07
EP1708259B1 (en) 2014-10-22
EP1708259A2 (en) 2006-10-04

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