JP4825891B2 - 半導体装置の製造方法およびテンプレート - Google Patents

半導体装置の製造方法およびテンプレート Download PDF

Info

Publication number
JP4825891B2
JP4825891B2 JP2009086917A JP2009086917A JP4825891B2 JP 4825891 B2 JP4825891 B2 JP 4825891B2 JP 2009086917 A JP2009086917 A JP 2009086917A JP 2009086917 A JP2009086917 A JP 2009086917A JP 4825891 B2 JP4825891 B2 JP 4825891B2
Authority
JP
Japan
Prior art keywords
pattern
template
mask
closed loop
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009086917A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010239009A5 (enExample
JP2010239009A (ja
Inventor
耕治 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2009086917A priority Critical patent/JP4825891B2/ja
Priority to US12/683,876 priority patent/US8222150B2/en
Priority to KR1020100019975A priority patent/KR101182885B1/ko
Publication of JP2010239009A publication Critical patent/JP2010239009A/ja
Publication of JP2010239009A5 publication Critical patent/JP2010239009A5/ja
Application granted granted Critical
Publication of JP4825891B2 publication Critical patent/JP4825891B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10P50/691—
    • H10P74/203—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009086917A 2009-03-31 2009-03-31 半導体装置の製造方法およびテンプレート Expired - Fee Related JP4825891B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009086917A JP4825891B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法およびテンプレート
US12/683,876 US8222150B2 (en) 2009-03-31 2010-01-07 Method of manufacturing semiconductor device, template, and method of creating pattern inspection data
KR1020100019975A KR101182885B1 (ko) 2009-03-31 2010-03-05 반도체 장치 제조 방법, 템플릿, 및 패턴 검사 데이터 생성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009086917A JP4825891B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法およびテンプレート

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011167069A Division JP5337207B2 (ja) 2011-07-29 2011-07-29 パターン検査データの作成方法

Publications (3)

Publication Number Publication Date
JP2010239009A JP2010239009A (ja) 2010-10-21
JP2010239009A5 JP2010239009A5 (enExample) 2011-06-23
JP4825891B2 true JP4825891B2 (ja) 2011-11-30

Family

ID=42784805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009086917A Expired - Fee Related JP4825891B2 (ja) 2009-03-31 2009-03-31 半導体装置の製造方法およびテンプレート

Country Status (3)

Country Link
US (1) US8222150B2 (enExample)
JP (1) JP4825891B2 (enExample)
KR (1) KR101182885B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014103615A1 (ja) * 2012-12-28 2014-07-03 大日本印刷株式会社 ナノインプリントモールドの製造方法
JP2014187257A (ja) * 2013-03-25 2014-10-02 Dainippon Printing Co Ltd ナノインプリントモールドの製造方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5173944B2 (ja) * 2009-06-16 2013-04-03 キヤノン株式会社 インプリント装置及び物品の製造方法
JP5275208B2 (ja) * 2009-12-02 2013-08-28 株式会社東芝 半導体装置の製造方法
JP5337114B2 (ja) * 2010-07-30 2013-11-06 株式会社東芝 パタン形成方法
CN102468136A (zh) * 2010-11-19 2012-05-23 中芯国际集成电路制造(上海)有限公司 双重图形化方法
JP2013065772A (ja) 2011-09-20 2013-04-11 Toshiba Corp 半導体装置の製造方法
JP6324318B2 (ja) * 2011-12-19 2018-05-16 キャノン・ナノテクノロジーズ・インコーポレーテッド インプリントリソグラフィー用のシームレスな大面積マスターテンプレートの製造方法
JP5899931B2 (ja) * 2012-01-06 2016-04-06 大日本印刷株式会社 ナノインプリント用テンプレート及びその製造方法
JP6142539B2 (ja) * 2012-01-20 2017-06-07 東レ株式会社 成形材料
JP6127535B2 (ja) * 2012-02-03 2017-05-17 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP6089451B2 (ja) * 2012-05-30 2017-03-08 大日本印刷株式会社 ナノインプリントモールドおよびその製造方法
JP6236918B2 (ja) * 2012-06-26 2017-11-29 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP6019967B2 (ja) * 2012-09-10 2016-11-02 大日本印刷株式会社 パターン形成方法
JP6019966B2 (ja) * 2012-09-10 2016-11-02 大日本印刷株式会社 パターン形成方法
JP2014079903A (ja) * 2012-10-15 2014-05-08 Hoya Corp インプリント用モールドの製造方法
JP6357753B2 (ja) * 2012-10-30 2018-07-18 大日本印刷株式会社 ナノインプリントモールドの製造方法
JP5983322B2 (ja) * 2012-11-05 2016-08-31 大日本印刷株式会社 パターン構造体の形成方法
JP6003571B2 (ja) * 2012-11-21 2016-10-05 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP6136271B2 (ja) * 2013-01-08 2017-05-31 大日本印刷株式会社 インプリントモールドの製造方法
JP6127517B2 (ja) * 2013-01-08 2017-05-17 大日本印刷株式会社 インプリントモールドの製造方法
JP6115245B2 (ja) * 2013-03-28 2017-04-19 大日本印刷株式会社 ナノインプリント用テンプレートおよびその製造方法
JP6232731B2 (ja) * 2013-04-16 2017-11-22 大日本印刷株式会社 インプリントモールドの製造方法
JP6136721B2 (ja) * 2013-08-01 2017-05-31 大日本印刷株式会社 パターン形成方法及びインプリントモールドの製造方法
JP6156013B2 (ja) * 2013-09-24 2017-07-05 大日本印刷株式会社 インプリントモールドの製造方法
JP6565415B2 (ja) * 2015-07-22 2019-08-28 大日本印刷株式会社 インプリントモールド製造用の基板およびインプリントモールドの製造方法
JP2018531506A (ja) * 2015-09-24 2018-10-25 東京エレクトロン株式会社 サブ解像度基板パターニングのためのエッチングマスクを形成する方法
JP6183519B2 (ja) * 2016-08-26 2017-08-23 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP6311769B2 (ja) * 2016-10-24 2018-04-18 大日本印刷株式会社 ナノインプリント用テンプレート
KR101907039B1 (ko) * 2016-11-04 2018-12-05 한국과학기술연구원 신뢰성 있는 동작 지표, 소자 간 균일성 및 다중 레벨 데이터 저장 특성을 갖는 비휘발성 저항 변화 메모리 소자 및 이의 제조방법
KR102617139B1 (ko) * 2018-04-09 2023-12-26 삼성전자주식회사 반도체 소자 및 그 제조방법
JP2020047634A (ja) 2018-09-14 2020-03-26 キオクシア株式会社 パターン形成方法、マスタテンプレートおよびテンプレートの製造方法
JP2021153133A (ja) 2020-03-24 2021-09-30 キオクシア株式会社 パターン形成方法およびテンプレートの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000194142A (ja) 1998-12-25 2000-07-14 Fujitsu Ltd パタ―ン形成方法及び半導体装置の製造方法
EP1072954A3 (en) 1999-07-28 2002-05-22 Lucent Technologies Inc. Lithographic process for device fabrication
US7432634B2 (en) * 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
KR100862301B1 (ko) * 2000-07-16 2008-10-13 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피를 위한 고분해능 오버레이 정렬 방법 및 시스템
WO2002067055A2 (en) 2000-10-12 2002-08-29 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
JP2007144995A (ja) 2005-10-25 2007-06-14 Dainippon Printing Co Ltd 光硬化ナノインプリント用モールド及びその製造方法
JP4774937B2 (ja) 2005-11-10 2011-09-21 大日本印刷株式会社 テンプレートの製造方法
WO2008005087A2 (en) * 2006-06-30 2008-01-10 Advanced Micro Devices, Inc. A nano imprint technique with increased flexibility with respect to alignment and feature shaping
US7666578B2 (en) * 2006-09-14 2010-02-23 Micron Technology, Inc. Efficient pitch multiplication process
WO2008032416A1 (fr) * 2006-09-15 2008-03-20 Hitachi High-Technologies Corporation Puce d'alignement pour une mesure d'aberration ponctuelle de microscope électronique à balayage
JP2008218690A (ja) 2007-03-05 2008-09-18 Seiko Epson Corp 半導体装置の製造方法及びテンプレート
KR100876805B1 (ko) * 2007-05-14 2009-01-09 주식회사 하이닉스반도체 나노 임프린트 리소그라피 공정용 템플릿 및 이를 이용한 반도체 소자 제조 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014103615A1 (ja) * 2012-12-28 2014-07-03 大日本印刷株式会社 ナノインプリントモールドの製造方法
KR20150100610A (ko) * 2012-12-28 2015-09-02 다이니폰 인사츠 가부시키가이샤 나노임프린트 몰드의 제조 방법
JPWO2014103615A1 (ja) * 2012-12-28 2017-01-12 大日本印刷株式会社 ナノインプリントモールドの製造方法
US9586343B2 (en) 2012-12-28 2017-03-07 Dai Nippon Printing Co., Ltd. Method for producing nanoimprint mold
KR102052465B1 (ko) 2012-12-28 2019-12-05 다이니폰 인사츠 가부시키가이샤 나노임프린트 몰드의 제조 방법
JP2014187257A (ja) * 2013-03-25 2014-10-02 Dainippon Printing Co Ltd ナノインプリントモールドの製造方法

Also Published As

Publication number Publication date
KR20100109374A (ko) 2010-10-08
KR101182885B1 (ko) 2012-09-13
US20100248482A1 (en) 2010-09-30
JP2010239009A (ja) 2010-10-21
US8222150B2 (en) 2012-07-17

Similar Documents

Publication Publication Date Title
JP4825891B2 (ja) 半導体装置の製造方法およびテンプレート
US9482965B2 (en) Transmission balancing for phase shift mask with a trim mask
US7252909B2 (en) Method to reduce CD non-uniformity in IC manufacturing
JP5076025B2 (ja) 自動作成マスク及び多重マスク層を利用した単一集積回路層のパターン形成
JP5567248B2 (ja) ゲートパターンを形成するための二重露光二重レジスト層プロセス
US7669172B2 (en) Pattern creation method, mask manufacturing method and semiconductor device manufacturing method
KR101275947B1 (ko) 다중 레티클 프로세스를 위한 레티클 정렬 및 오버레이
TW200826157A (en) Method of manufacturing mask
US9607852B2 (en) Methods of dividing layouts and methods of manufacturing semiconductor devices using the same
US8178366B2 (en) Pattern forming method, manufacturing method of semiconductor device, and template manufacturing method
JP2008132722A (ja) ナノインプリント用モールドおよびその作成方法、ならびにデバイスの製造方法
JP5337207B2 (ja) パターン検査データの作成方法
US9104833B2 (en) Mask set for double exposure process and method of using the mask set
KR20110112728A (ko) 스페이서 패터닝을 이용한 반도체소자의 미세패턴 형성방법
US20130220970A1 (en) Method for fabricating template
Mukai et al. A study of CD budget in spacer patterning technology
JP2008235553A (ja) パターン作成方法、パターン検証方法およびプログラム
TWI521369B (zh) 佈局分割方法及應用其之半導體元件製造方法
KR101145032B1 (ko) 포토마스크 제조 방법
CN1245662C (zh) 减少透镜像差与图案移位的光罩与方法
JP2010026416A (ja) フォトマスクパターンの作成方法
Yang et al. OPC accuracy enhancement through systematic OPC calibration and verification methodology for sub-100nm node
Meng et al. Enhancing lithographic resolution for via and metal layers in advanced semiconductor manufacturing: NTD-based multipatterning strategies
CN106154736B (zh) 提升图案精密度的方法
TW201011460A (en) Method for manufacturing photo mask

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110502

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110502

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20110502

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20110520

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110531

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110729

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110816

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110912

R151 Written notification of patent or utility model registration

Ref document number: 4825891

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140916

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees