JP4815051B2 - 低切替磁界磁性トンネル接合 - Google Patents

低切替磁界磁性トンネル接合 Download PDF

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Publication number
JP4815051B2
JP4815051B2 JP2000560586A JP2000560586A JP4815051B2 JP 4815051 B2 JP4815051 B2 JP 4815051B2 JP 2000560586 A JP2000560586 A JP 2000560586A JP 2000560586 A JP2000560586 A JP 2000560586A JP 4815051 B2 JP4815051 B2 JP 4815051B2
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magnetic
layer
vector
tunnel junction
parallel
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JP2002520873A5 (enExample
JP2002520873A (ja
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ユージーン・チェン
サイエド・エヌ・テラニ
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Everspin Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5615—Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2000560586A 1998-07-20 1999-07-19 低切替磁界磁性トンネル接合 Expired - Lifetime JP4815051B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/118,979 1998-07-20
US09/118,979 US5953248A (en) 1998-07-20 1998-07-20 Low switching field magnetic tunneling junction for high density arrays
PCT/US1999/016314 WO2000004552A1 (en) 1998-07-20 1999-07-19 Low switching field magnetic tunneling junction usable for multi-state magnetic memory cell

Publications (3)

Publication Number Publication Date
JP2002520873A JP2002520873A (ja) 2002-07-09
JP2002520873A5 JP2002520873A5 (enExample) 2006-09-21
JP4815051B2 true JP4815051B2 (ja) 2011-11-16

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JP2000560586A Expired - Lifetime JP4815051B2 (ja) 1998-07-20 1999-07-19 低切替磁界磁性トンネル接合

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US (1) US5953248A (enExample)
EP (1) EP1038299B1 (enExample)
JP (1) JP4815051B2 (enExample)
DE (1) DE69932589T2 (enExample)
TW (1) TW451192B (enExample)
WO (1) WO2000004552A1 (enExample)

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JP3515940B2 (ja) 2000-02-17 2004-04-05 シャープ株式会社 磁気トンネル接合素子及びそれを用いた磁気メモリ
DE10106860A1 (de) * 2000-02-17 2001-08-30 Sharp Kk MTJ-Element und Magnetspeicher unter Verwendung eines solchen
US6727105B1 (en) * 2000-02-28 2004-04-27 Hewlett-Packard Development Company, L.P. Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
US6911710B2 (en) * 2000-03-09 2005-06-28 Hewlett-Packard Development Company, L.P. Multi-bit magnetic memory cells
US6469926B1 (en) * 2000-03-22 2002-10-22 Motorola, Inc. Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
DE10113853B4 (de) * 2000-03-23 2009-08-06 Sharp K.K. Magnetspeicherelement und Magnetspeicher
US6538921B2 (en) 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
US6544801B1 (en) 2000-08-21 2003-04-08 Motorola, Inc. Method of fabricating thermally stable MTJ cell and apparatus
US6767655B2 (en) * 2000-08-21 2004-07-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element
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US6730949B2 (en) * 2001-03-22 2004-05-04 Kabushiki Kaisha Toshiba Magnetoresistance effect device
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US6657888B1 (en) 2001-05-11 2003-12-02 Board Of Regents Of The University Of Nebraska Application of high spin polarization materials in two terminal non-volatile bistable memory devices
US6744086B2 (en) 2001-05-15 2004-06-01 Nve Corporation Current switched magnetoresistive memory cell
US6963543B2 (en) 2001-06-29 2005-11-08 Qualcomm Incorporated Method and system for group call service
US6430085B1 (en) 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6633498B1 (en) * 2002-06-18 2003-10-14 Motorola, Inc. Magnetoresistive random access memory with reduced switching field
US6693824B2 (en) 2002-06-28 2004-02-17 Motorola, Inc. Circuit and method of writing a toggle memory
US6850433B2 (en) * 2002-07-15 2005-02-01 Hewlett-Packard Development Company, Lp. Magnetic memory device and method
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
JP3837102B2 (ja) * 2002-08-20 2006-10-25 Ｔｄｋ株式会社 電磁変換素子、薄膜磁気ヘッド、磁気ヘッドアセンブリおよび磁気再生装置、ならびに電磁変換素子の製造方法
JP2004128237A (ja) * 2002-10-03 2004-04-22 Sony Corp 磁気抵抗効果素子および磁気メモリ装置
US6873542B2 (en) 2002-10-03 2005-03-29 International Business Machines Corporation Antiferromagnetically coupled bi-layer sensor for magnetic random access memory
US6870758B2 (en) * 2002-10-30 2005-03-22 Hewlett-Packard Development Company, L.P. Magnetic memory device and methods for making same
JP3863484B2 (ja) * 2002-11-22 2006-12-27 株式会社東芝 磁気抵抗効果素子および磁気メモリ
DE10258860A1 (de) * 2002-12-17 2004-07-15 Robert Bosch Gmbh Magnetoresistives Schichtsystem und Sensorelement mit diesem Schichtsystem
US6714446B1 (en) * 2003-05-13 2004-03-30 Motorola, Inc. Magnetoelectronics information device having a compound magnetic free layer
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
JP4253225B2 (ja) * 2003-07-09 2009-04-08 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US6956764B2 (en) * 2003-08-25 2005-10-18 Freescale Semiconductor, Inc. Method of writing to a multi-state magnetic random access memory cell
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US7310265B2 (en) * 2003-10-14 2007-12-18 Agency For Science, Technology And Research Magnetic memory device
US6985383B2 (en) * 2003-10-20 2006-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Reference generator for multilevel nonlinear resistivity memory storage elements
JP4581394B2 (ja) * 2003-12-22 2010-11-17 ソニー株式会社 磁気メモリ
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
US7105372B2 (en) 2004-01-20 2006-09-12 Headway Technologies, Inc. Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
DE102005004126B4 (de) * 2004-02-06 2008-05-08 Qimonda Ag MRAM-Speicherzelle mit schwacher intrinsisch anisotroper Speicherschicht
US7436700B2 (en) * 2004-02-06 2008-10-14 Infineon Technologies Ag MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
FR2869445B1 (fr) * 2004-04-26 2006-07-07 St Microelectronics Sa Element de memoire vive magnetique
US7372116B2 (en) * 2004-06-16 2008-05-13 Hitachi Global Storage Technologies Netherlands B.V. Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
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US7599156B2 (en) * 2004-10-08 2009-10-06 Kabushiki Kaisha Toshiba Magnetoresistive element having specially shaped ferromagnetic layer
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JP4388008B2 (ja) * 2004-11-30 2009-12-24 株式会社東芝 半導体記憶装置
JP4012196B2 (ja) * 2004-12-22 2007-11-21 株式会社東芝 磁気ランダムアクセスメモリのデータ書き込み方法
JP2007081280A (ja) * 2005-09-16 2007-03-29 Fujitsu Ltd 磁気抵抗効果素子及び磁気メモリ装置
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FR2925747B1 (fr) 2007-12-21 2010-04-09 Commissariat Energie Atomique Memoire magnetique a ecriture assistee thermiquement
US8242776B2 (en) * 2008-03-26 2012-08-14 Everspin Technologies, Inc. Magnetic sensor design for suppression of barkhausen noise
KR102034210B1 (ko) * 2013-03-15 2019-10-18 에스케이하이닉스 주식회사 반도체 장치 및 이의 제조 방법, 이 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템

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Also Published As

Publication number Publication date
EP1038299A1 (en) 2000-09-27
EP1038299B1 (en) 2006-08-02
DE69932589D1 (de) 2006-09-14
TW451192B (en) 2001-08-21
WO2000004552A1 (en) 2000-01-27
DE69932589T2 (de) 2006-12-07
US5953248A (en) 1999-09-14
JP2002520873A (ja) 2002-07-09

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