DE69932589T2 - Magnetischer tunnelübergang mit geringer umschaltfeldstärke für magnetische mehrzustandsspeicherzelle - Google Patents

Magnetischer tunnelübergang mit geringer umschaltfeldstärke für magnetische mehrzustandsspeicherzelle Download PDF

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Publication number
DE69932589T2
DE69932589T2 DE69932589T DE69932589T DE69932589T2 DE 69932589 T2 DE69932589 T2 DE 69932589T2 DE 69932589 T DE69932589 T DE 69932589T DE 69932589 T DE69932589 T DE 69932589T DE 69932589 T2 DE69932589 T2 DE 69932589T2
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DE
Germany
Prior art keywords
magnetic
magnetoresistive
layer
switching
tunnel junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69932589T
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German (de)
English (en)
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DE69932589D1 (de
Inventor
Eugene Gilbert Chen
N. Saied Tempe TEHRANI
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NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
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Publication of DE69932589D1 publication Critical patent/DE69932589D1/de
Application granted granted Critical
Publication of DE69932589T2 publication Critical patent/DE69932589T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5615—Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE69932589T 1998-07-20 1999-07-19 Magnetischer tunnelübergang mit geringer umschaltfeldstärke für magnetische mehrzustandsspeicherzelle Expired - Fee Related DE69932589T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US118979 1998-07-20
US09/118,979 US5953248A (en) 1998-07-20 1998-07-20 Low switching field magnetic tunneling junction for high density arrays
PCT/US1999/016314 WO2000004552A1 (en) 1998-07-20 1999-07-19 Low switching field magnetic tunneling junction usable for multi-state magnetic memory cell

Publications (2)

Publication Number Publication Date
DE69932589D1 DE69932589D1 (de) 2006-09-14
DE69932589T2 true DE69932589T2 (de) 2006-12-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE69932589T Expired - Fee Related DE69932589T2 (de) 1998-07-20 1999-07-19 Magnetischer tunnelübergang mit geringer umschaltfeldstärke für magnetische mehrzustandsspeicherzelle

Country Status (6)

Country Link
US (1) US5953248A (enExample)
EP (1) EP1038299B1 (enExample)
JP (1) JP4815051B2 (enExample)
DE (1) DE69932589T2 (enExample)
TW (1) TW451192B (enExample)
WO (1) WO2000004552A1 (enExample)

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Also Published As

Publication number Publication date
EP1038299A1 (en) 2000-09-27
EP1038299B1 (en) 2006-08-02
JP4815051B2 (ja) 2011-11-16
DE69932589D1 (de) 2006-09-14
TW451192B (en) 2001-08-21
WO2000004552A1 (en) 2000-01-27
US5953248A (en) 1999-09-14
JP2002520873A (ja) 2002-07-09

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