JP4810306B2 - 銅ダマシン多層配線の形成方法 - Google Patents
銅ダマシン多層配線の形成方法 Download PDFInfo
- Publication number
- JP4810306B2 JP4810306B2 JP2006136072A JP2006136072A JP4810306B2 JP 4810306 B2 JP4810306 B2 JP 4810306B2 JP 2006136072 A JP2006136072 A JP 2006136072A JP 2006136072 A JP2006136072 A JP 2006136072A JP 4810306 B2 JP4810306 B2 JP 4810306B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- multilayer wiring
- forming
- gas
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 79
- 229910052802 copper Inorganic materials 0.000 title claims description 79
- 239000010949 copper Substances 0.000 title claims description 79
- 238000000034 method Methods 0.000 title claims description 39
- 239000007789 gas Substances 0.000 claims description 20
- 239000012298 atmosphere Substances 0.000 claims description 17
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 49
- 238000007747 plating Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
2 層間絶縁膜
3 溝パターン
4 バリア金属膜
5 銅シード膜
6 銅めっき膜
7 銅酸化膜
8 ダマシン銅配線
Claims (6)
- 半導体集積回路装置における銅ダマシン多層配線の形成方法であって、
銅表面の酸化処理を行った後に、還元性ガス雰囲気にて300〜400℃の加熱あるいは還元性ガスプラズマ雰囲気にてプラズマアニールを行い、
還元性ガスとして、テトラメチルシクロテトラシロキサン(1、3、5、7-tetramethylcyclotetrasiloxane)蒸気、ヘキサメチルジシラザン(hexamethyldisilazan)蒸気又はヘキサメチルジシロキサン(hexamethyldisiloxane)蒸気を用いることを特徴とする銅ダマシン多層配線の形成方法。 - 前記銅表面の酸化処理方法として、酸素を0.1〜20%含む窒素ガス雰囲気で200℃〜500℃の加熱処理を行うことを特徴とする請求項1に記載の銅ダマシン多層配線の形成方法。
- 前記銅表面の酸化処理方法として、過酸化水素水を含む溶液に浸漬することを特徴とする請求項1に記載の銅ダマシン多層配線の形成方法。
- 前記銅表面の酸化処理方法として、オゾンガスを溶解させた水に浸漬することを特徴とする請求項1に記載の銅ダマシン多層配線の形成方法。
- 前記銅表面の酸化処理方法として、1〜100PPMのオゾンガスあるいは1〜100%の酸素ガスを含む雰囲気にて常温で3時間以上晒すことを特徴とする請求項1に記載の銅ダマシン多層配線の形成方法。
- 前記銅表面の酸化処理方法として、酸素ガスを含むガスプラズマ雰囲気に晒すことを特徴とする請求項1に記載の銅ダマシン多層配線の形成方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006136072A JP4810306B2 (ja) | 2006-05-16 | 2006-05-16 | 銅ダマシン多層配線の形成方法 |
US11/798,684 US20070269977A1 (en) | 2006-05-16 | 2007-05-16 | Method of forming a multilayer wiring by the use of copper damascene technique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006136072A JP4810306B2 (ja) | 2006-05-16 | 2006-05-16 | 銅ダマシン多層配線の形成方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007311383A JP2007311383A (ja) | 2007-11-29 |
JP2007311383A5 JP2007311383A5 (ja) | 2009-06-25 |
JP4810306B2 true JP4810306B2 (ja) | 2011-11-09 |
Family
ID=38712491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006136072A Active JP4810306B2 (ja) | 2006-05-16 | 2006-05-16 | 銅ダマシン多層配線の形成方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070269977A1 (ja) |
JP (1) | JP4810306B2 (ja) |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264535A (ja) * | 1995-03-27 | 1996-10-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH11340318A (ja) * | 1998-05-22 | 1999-12-10 | Sony Corp | 銅膜の形成方法 |
JP3907151B2 (ja) * | 2000-01-25 | 2007-04-18 | 株式会社東芝 | 半導体装置の製造方法 |
JP4425432B2 (ja) * | 2000-06-20 | 2010-03-03 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP3934343B2 (ja) * | 2000-07-12 | 2007-06-20 | キヤノンマーケティングジャパン株式会社 | 半導体装置及びその製造方法 |
JP2002033385A (ja) * | 2000-07-13 | 2002-01-31 | Toshiba Corp | 半導体装置の製造方法及び半導体装置の評価方法 |
JP4535629B2 (ja) * | 2001-02-21 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2004079835A (ja) * | 2002-08-20 | 2004-03-11 | Renesas Technology Corp | 半導体装置の製造方法 |
JPWO2004061931A1 (ja) * | 2002-12-26 | 2006-05-18 | 富士通株式会社 | 多層配線構造を有する半導体装置およびその製造方法 |
JP2004342750A (ja) * | 2003-05-14 | 2004-12-02 | Toshiba Corp | 電子デバイスの製造方法 |
US7425505B2 (en) * | 2003-07-23 | 2008-09-16 | Fsi International, Inc. | Use of silyating agents |
JP2005191034A (ja) * | 2003-12-24 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100552812B1 (ko) * | 2003-12-31 | 2006-02-22 | 동부아남반도체 주식회사 | 반도체 소자의 구리 배선 형성 방법 |
JP2005310861A (ja) * | 2004-04-19 | 2005-11-04 | Mitsui Chemicals Inc | 炭化窒化珪素膜の形成方法 |
JP2005311083A (ja) * | 2004-04-21 | 2005-11-04 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
-
2006
- 2006-05-16 JP JP2006136072A patent/JP4810306B2/ja active Active
-
2007
- 2007-05-16 US US11/798,684 patent/US20070269977A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2007311383A (ja) | 2007-11-29 |
US20070269977A1 (en) | 2007-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4321570B2 (ja) | 半導体装置の製造方法 | |
JP5548332B2 (ja) | 半導体デバイスの製造方法 | |
JP2009212232A (ja) | 半導体装置の製造方法、半導体製造装置及び記憶媒体 | |
JP5193542B2 (ja) | 半導体装置の製造方法 | |
JP4548280B2 (ja) | 半導体装置の製造方法 | |
JPH11186261A (ja) | 半導体装置の製造方法 | |
JP5141761B2 (ja) | 半導体装置及びその製造方法 | |
JP4555320B2 (ja) | 低誘電率絶縁膜のダメージ回復方法及び半導体装置の製造方法 | |
US20090045519A1 (en) | Semiconductor Device and Method of Producing the Same | |
JP2007165428A (ja) | 半導体装置の製造方法 | |
JP4309873B2 (ja) | 電子デバイスの製造方法 | |
TWI389255B (zh) | 積體電路結構之製備方法 | |
JP4638140B2 (ja) | 半導体素子の銅配線形成方法 | |
JP2005033160A (ja) | 半導体素子の銅配線形成方法 | |
JP4810306B2 (ja) | 銅ダマシン多層配線の形成方法 | |
JP5823359B2 (ja) | 半導体装置の製造方法 | |
JPH11191556A (ja) | 半導体装置の製造方法および銅または銅合金パターンの形成方法 | |
JP2001284355A (ja) | 半導体装置およびその製造方法 | |
JP5938920B2 (ja) | 半導体装置の製造方法 | |
JP2009141199A (ja) | 半導体装置及びその製造方法 | |
JP2008147467A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2007084891A (ja) | 配線基板のメッキ膜形成方法 | |
JP2005142330A (ja) | 半導体装置の製造方法及び半導体装置 | |
JP4380414B2 (ja) | 半導体装置の製造方法 | |
JP4757372B2 (ja) | 埋込配線層の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090511 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090511 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20100623 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100623 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110223 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110413 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110803 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110822 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140826 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4810306 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |