JP4791110B2 - 真空チャンバおよび真空処理装置 - Google Patents
真空チャンバおよび真空処理装置 Download PDFInfo
- Publication number
- JP4791110B2 JP4791110B2 JP2005255294A JP2005255294A JP4791110B2 JP 4791110 B2 JP4791110 B2 JP 4791110B2 JP 2005255294 A JP2005255294 A JP 2005255294A JP 2005255294 A JP2005255294 A JP 2005255294A JP 4791110 B2 JP4791110 B2 JP 4791110B2
- Authority
- JP
- Japan
- Prior art keywords
- main frame
- vacuum chamber
- reinforcing
- substrate
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims description 35
- 230000003014 reinforcing effect Effects 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 54
- 238000012546 transfer Methods 0.000 claims description 38
- 238000012423 maintenance Methods 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 27
- 230000008569 process Effects 0.000 description 27
- 230000002787 reinforcement Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000032258 transport Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 230000007723 transport mechanism Effects 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005255294A JP4791110B2 (ja) | 2005-09-02 | 2005-09-02 | 真空チャンバおよび真空処理装置 |
KR1020060083845A KR100856145B1 (ko) | 2005-09-02 | 2006-08-31 | 진공 챔버 및 진공 처리 장치 |
TW095132454A TWI406332B (zh) | 2005-09-02 | 2006-09-01 | Vacuum chamber and vacuum treatment device |
CNB2006101289226A CN100421212C (zh) | 2005-09-02 | 2006-09-04 | 真空腔室和真空处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005255294A JP4791110B2 (ja) | 2005-09-02 | 2005-09-02 | 真空チャンバおよび真空処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007073542A JP2007073542A (ja) | 2007-03-22 |
JP2007073542A5 JP2007073542A5 (es) | 2008-10-02 |
JP4791110B2 true JP4791110B2 (ja) | 2011-10-12 |
Family
ID=37817679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005255294A Expired - Fee Related JP4791110B2 (ja) | 2005-09-02 | 2005-09-02 | 真空チャンバおよび真空処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4791110B2 (es) |
KR (1) | KR100856145B1 (es) |
CN (1) | CN100421212C (es) |
TW (1) | TWI406332B (es) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7018517B2 (en) | 2002-06-21 | 2006-03-28 | Applied Materials, Inc. | Transfer chamber for vacuum processing system |
KR101101757B1 (ko) * | 2005-11-07 | 2012-01-05 | 주성엔지니어링(주) | 제조비용을 절감한 진공챔버 |
WO2009078351A1 (ja) * | 2007-12-14 | 2009-06-25 | Ulvac, Inc. | チャンバ及び成膜装置 |
JP5551346B2 (ja) * | 2008-06-10 | 2014-07-16 | 東京エレクトロン株式会社 | チャンバ及び処理装置 |
CN102272350B (zh) * | 2009-01-14 | 2014-12-24 | 株式会社爱发科 | 等离子cvd装置 |
FI122940B (fi) * | 2009-02-09 | 2012-09-14 | Beneq Oy | Reaktiokammio |
KR20110067939A (ko) * | 2009-12-15 | 2011-06-22 | 주식회사 테스 | 로드락 챔버 |
KR101598176B1 (ko) * | 2010-03-30 | 2016-02-26 | 주식회사 원익아이피에스 | 진공챔버 |
JP5526988B2 (ja) * | 2010-04-28 | 2014-06-18 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理システム |
KR101363064B1 (ko) * | 2012-05-22 | 2014-02-14 | 박종민 | 진공 챔버 구조 |
US9717147B2 (en) * | 2013-09-26 | 2017-07-25 | Applied Materials, Inc. | Electronic device manufacturing system |
JP7023097B2 (ja) * | 2016-12-28 | 2022-02-21 | 東京エレクトロン株式会社 | 真空チャンバおよび真空チャンバの扉の施錠方法 |
JP6625597B2 (ja) * | 2017-11-13 | 2019-12-25 | 平田機工株式会社 | 搬送チャンバ |
JP7277137B2 (ja) * | 2018-12-28 | 2023-05-18 | 株式会社Screenホールディングス | 基板処理装置、および搬送モジュール |
KR102193096B1 (ko) | 2019-01-31 | 2020-12-21 | (주)에프티엘 | 진공챔버의 리브를 용접하기 위한 용접지그장치 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3608065B2 (ja) * | 1996-10-31 | 2005-01-05 | 東京エレクトロン株式会社 | 縦型熱処理装置およびそのボートと保温筒のメンテナンス方法 |
US5914493A (en) * | 1997-02-21 | 1999-06-22 | Nikon Corporation | Charged-particle-beam exposure apparatus and methods with substrate-temperature control |
US6241117B1 (en) * | 1997-11-26 | 2001-06-05 | Steven R. Wickins | Pressure differential containment structure |
JP4253107B2 (ja) * | 2000-08-24 | 2009-04-08 | キヤノンアネルバ株式会社 | 基板処理装置及びその増設方法 |
JP4003412B2 (ja) * | 2001-06-20 | 2007-11-07 | 株式会社島津製作所 | 真空チャンバ及びその真空チャンバを用いた液晶注入装置 |
JP2003077974A (ja) * | 2001-08-31 | 2003-03-14 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2003188226A (ja) * | 2001-12-18 | 2003-07-04 | Anelva Corp | 真空搬送処理装置 |
JP2004089872A (ja) * | 2002-08-30 | 2004-03-25 | Tsukishima Kikai Co Ltd | 真空装置 |
JP2004311640A (ja) * | 2003-04-04 | 2004-11-04 | Tokyo Electron Ltd | 処理容器 |
SG115678A1 (en) * | 2003-04-22 | 2005-10-28 | Asml Netherlands Bv | Substrate carrier and method for making a substrate carrier |
JP2004335743A (ja) * | 2003-05-08 | 2004-11-25 | Ulvac Japan Ltd | 真空処理装置用真空チャンバー |
KR100441875B1 (ko) * | 2003-06-02 | 2004-07-27 | 주성엔지니어링(주) | 분리형 이송 챔버 |
JP4833512B2 (ja) * | 2003-06-24 | 2011-12-07 | 東京エレクトロン株式会社 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
JP4767574B2 (ja) * | 2005-03-31 | 2011-09-07 | 東京エレクトロン株式会社 | 処理チャンバおよび処理装置 |
JP4079157B2 (ja) * | 2005-04-12 | 2008-04-23 | 東京エレクトロン株式会社 | ゲートバルブ装置及び処理システム |
-
2005
- 2005-09-02 JP JP2005255294A patent/JP4791110B2/ja not_active Expired - Fee Related
-
2006
- 2006-08-31 KR KR1020060083845A patent/KR100856145B1/ko active IP Right Grant
- 2006-09-01 TW TW095132454A patent/TWI406332B/zh active
- 2006-09-04 CN CNB2006101289226A patent/CN100421212C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN100421212C (zh) | 2008-09-24 |
KR20070026215A (ko) | 2007-03-08 |
TW200731391A (en) | 2007-08-16 |
TWI406332B (zh) | 2013-08-21 |
KR100856145B1 (ko) | 2008-09-03 |
JP2007073542A (ja) | 2007-03-22 |
CN1925111A (zh) | 2007-03-07 |
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