JP4769997B2 - 薄膜トランジスタ及びその製造方法、液晶表示装置、液晶表示装置の製造方法、有機ｅｌ装置、有機ｅｌ装置の製造方法 - Google Patents

薄膜トランジスタ及びその製造方法、液晶表示装置、液晶表示装置の製造方法、有機ｅｌ装置、有機ｅｌ装置の製造方法 Download PDF

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JP4769997B2
JP4769997B2 JP2000105304A JP2000105304A JP4769997B2 JP 4769997 B2 JP4769997 B2 JP 4769997B2 JP 2000105304 A JP2000105304 A JP 2000105304A JP 2000105304 A JP2000105304 A JP 2000105304A JP 4769997 B2 JP4769997 B2 JP 4769997B2
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film
electrode
insulating film
thickness
forming
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Expired - Fee Related
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Japanese (ja)
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JP2001291870A5 (enExample
JP2001291870A (ja
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田中　　勉
昌宏 藤野
久雄 林
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Sony Corp
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Sony Corp
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Priority to JP2000105304A priority Critical patent/JP4769997B2/ja
Priority to KR1020010018233A priority patent/KR100772347B1/ko
Priority to US09/827,676 priority patent/US6933180B2/en
Publication of JP2001291870A publication Critical patent/JP2001291870A/ja
Priority to US10/051,267 priority patent/US6952021B2/en
Publication of JP2001291870A5 publication Critical patent/JP2001291870A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
JP2000105304A 2000-04-06 2000-04-06 薄膜トランジスタ及びその製造方法、液晶表示装置、液晶表示装置の製造方法、有機ｅｌ装置、有機ｅｌ装置の製造方法 Expired - Fee Related JP4769997B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000105304A JP4769997B2 (ja) 2000-04-06 2000-04-06 薄膜トランジスタ及びその製造方法、液晶表示装置、液晶表示装置の製造方法、有機ｅｌ装置、有機ｅｌ装置の製造方法
KR1020010018233A KR100772347B1 (ko) 2000-04-06 2001-04-06 바텀-게이트 박막 트랜지스터 및 그 제조 방법, 액정디스플레이 장치 및 그 제조 방법, 및 유기 이엘 장치 및그 제조 방법
US09/827,676 US6933180B2 (en) 2000-04-06 2001-04-06 Thin-film transistor and method for making the same
US10/051,267 US6952021B2 (en) 2000-04-06 2002-01-18 Thin-film transistor and method for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000105304A JP4769997B2 (ja) 2000-04-06 2000-04-06 薄膜トランジスタ及びその製造方法、液晶表示装置、液晶表示装置の製造方法、有機ｅｌ装置、有機ｅｌ装置の製造方法

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JP2001291870A JP2001291870A (ja) 2001-10-19
JP2001291870A5 JP2001291870A5 (enExample) 2007-04-26
JP4769997B2 true JP4769997B2 (ja) 2011-09-07

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US (2) US6933180B2 (enExample)
JP (1) JP4769997B2 (enExample)
KR (1) KR100772347B1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002372725A (ja) * 2001-04-04 2002-12-26 Seiko Epson Corp 非線形素子の製造方法、電気光学装置の製造方法、電気光学装置、および電子機器
KR20020060113A (ko) * 2002-05-13 2002-07-16 정태훈 결정화된 폴리실리콘층 상에 보호막이 형성된 투명 기판을제공하는 방법, 그 폴리실리콘 활성층 형성 방법 및 이를이용한 폴리실리콘 박막 트랜지스터 제조 방법
US7109650B2 (en) * 2002-07-08 2006-09-19 Lg.Philips Lcd Co., Ltd. Active matrix organic electroluminescent display device and method of fabricating the same
KR20040021758A (ko) * 2002-09-04 2004-03-11 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막트랜지스터 제조방법
KR100846006B1 (ko) * 2003-11-28 2008-07-11 니폰 제온 가부시키가이샤 액티브 매트릭스 표시 장치 및 박막 트랜지스터 집적 회로 장치
KR100683671B1 (ko) * 2004-03-25 2007-02-15 삼성에스디아이 주식회사 전자기파 차폐층을 구비한 플라즈마 디스플레이 패널
JP5011852B2 (ja) * 2005-07-20 2012-08-29 富士通セミコンダクター株式会社 電子デバイスの製造方法
JP4548264B2 (ja) * 2005-08-01 2010-09-22 株式会社デンソー 車両用交流発電機
TWI603307B (zh) * 2006-04-05 2017-10-21 半導體能源研究所股份有限公司 半導體裝置，顯示裝置，和電子裝置
KR100792780B1 (ko) * 2006-06-09 2008-01-14 학교법인 포항공과대학교 저전압 구동의 플렉서블 유기 박막 트랜지스터 및 이의제조방법
JP5092306B2 (ja) 2006-08-02 2012-12-05 ソニー株式会社 表示装置および画素回路のレイアウト方法
US7820497B2 (en) * 2007-01-29 2010-10-26 Board Of Regents, The University Of Texas System Electronic textiles with electronic devices on ribbons
US7941919B2 (en) * 2007-01-29 2011-05-17 Board Of Regents, The University Of Texas System Method of assembling an electronic textile
JP2009070861A (ja) * 2007-09-11 2009-04-02 Hitachi Displays Ltd 表示装置
JP4953166B2 (ja) * 2007-11-29 2012-06-13 カシオ計算機株式会社 表示パネルの製造方法
KR100965260B1 (ko) 2008-01-25 2010-06-22 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR102413263B1 (ko) 2008-09-19 2022-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101041141B1 (ko) 2009-03-03 2011-06-13 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR101049801B1 (ko) 2009-03-05 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치
KR101056428B1 (ko) * 2009-03-27 2011-08-11 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치
KR101094295B1 (ko) 2009-11-13 2011-12-19 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법
KR20110090408A (ko) * 2010-02-03 2011-08-10 삼성전자주식회사 박막 형성 방법, 표시판용 금속 배선 및 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
US10083781B2 (en) 2015-10-30 2018-09-25 Vishay Dale Electronics, Llc Surface mount resistors and methods of manufacturing same
US10438729B2 (en) 2017-11-10 2019-10-08 Vishay Dale Electronics, Llc Resistor with upper surface heat dissipation

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688317A (en) * 1979-12-20 1981-07-17 Fujitsu Ltd Manufacture of semiconductor device
JPH0814668B2 (ja) * 1988-02-16 1996-02-14 シャープ株式会社 マトリックス型液晶表示パネル
JPH07131030A (ja) * 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
JP3358284B2 (ja) * 1994-03-31 2002-12-16 カシオ計算機株式会社 薄膜トランジスタの製造方法
US6433361B1 (en) * 1994-04-29 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and method for forming the same
JPH08201851A (ja) * 1995-01-31 1996-08-09 Sharp Corp アクティブマトリクス基板
JPH08279618A (ja) 1995-04-04 1996-10-22 Sony Corp 薄膜半導体装置の製造方法
JPH0945930A (ja) * 1995-07-28 1997-02-14 Sony Corp 薄膜トランジスタ及びその製造方法
US6063654A (en) * 1996-02-20 2000-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor involving laser treatment
JP3657371B2 (ja) * 1996-11-06 2005-06-08 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP3463971B2 (ja) * 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブｅｌ発光装置
US6582837B1 (en) * 1997-07-14 2003-06-24 Nec Corporation Organic electroluminescence device
JP3599972B2 (ja) * 1997-09-30 2004-12-08 三洋電機株式会社 薄膜トランジスタの製造方法
JP3203227B2 (ja) 1998-02-27 2001-08-27 三洋電機株式会社 表示装置の製造方法
JP4458563B2 (ja) * 1998-03-31 2010-04-28 三菱電機株式会社 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法
JP3702096B2 (ja) * 1998-06-08 2005-10-05 三洋電機株式会社 薄膜トランジスタ及び表示装置
JP3592535B2 (ja) * 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4472061B2 (ja) * 1998-08-21 2010-06-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
US6297519B1 (en) * 1998-08-28 2001-10-02 Fujitsu Limited TFT substrate with low contact resistance and damage resistant terminals
US6420758B1 (en) * 1998-11-17 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity region overlapping a gate electrode
US6281552B1 (en) * 1999-03-23 2001-08-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having ldd regions
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4307635B2 (ja) * 1999-06-22 2009-08-05 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
KR20010098463A (ko) 2001-11-08
KR100772347B1 (ko) 2007-11-02
US20020063254A1 (en) 2002-05-30
US6933180B2 (en) 2005-08-23
US20010028057A1 (en) 2001-10-11
US6952021B2 (en) 2005-10-04
JP2001291870A (ja) 2001-10-19

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