JP4768280B2 - 相変化メモリ装置及びそのライティング方法 - Google Patents

相変化メモリ装置及びそのライティング方法 Download PDF

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Publication number
JP4768280B2
JP4768280B2 JP2005029813A JP2005029813A JP4768280B2 JP 4768280 B2 JP4768280 B2 JP 4768280B2 JP 2005029813 A JP2005029813 A JP 2005029813A JP 2005029813 A JP2005029813 A JP 2005029813A JP 4768280 B2 JP4768280 B2 JP 4768280B2
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Japan
Prior art keywords
pulse
write driver
memory cell
memory
phase change
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Expired - Fee Related
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JP2005029813A
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English (en)
Japanese (ja)
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JP2005222687A (ja
JP2005222687A5 (enExample
Inventor
崔炳吉
郭忠根
金杜応
趙柏衡
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR10-2004-0007112A external-priority patent/KR100520228B1/ko
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Publication of JP2005222687A5 publication Critical patent/JP2005222687A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2005029813A 2004-02-04 2005-02-04 相変化メモリ装置及びそのライティング方法 Expired - Fee Related JP4768280B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2004-0007112A KR100520228B1 (ko) 2004-02-04 2004-02-04 상변화 메모리 장치 및 그에 따른 데이터 라이팅 방법
KR2004-007112 2004-02-04
US10/919,371 US7110286B2 (en) 2004-02-04 2004-08-17 Phase-change memory device and method of writing a phase-change memory device
US10/919371 2004-08-17

Publications (3)

Publication Number Publication Date
JP2005222687A JP2005222687A (ja) 2005-08-18
JP2005222687A5 JP2005222687A5 (enExample) 2008-03-13
JP4768280B2 true JP4768280B2 (ja) 2011-09-07

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US (1) US7502251B2 (enExample)
JP (1) JP4768280B2 (enExample)
CN (1) CN1664953B (enExample)
DE (1) DE102005004338B4 (enExample)

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KR102749204B1 (ko) * 2019-04-22 2025-01-06 삼성전자주식회사 상이한 동작 모드들에서 동작하는 뱅크들을 포함하는 불휘발성 메모리 장치, 메모리 컨트롤러의 동작 방법, 및 불휘발성 메모리 장치 및 메모리 컨트롤러를 포함하는 저장 장치
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Publication number Publication date
US20060274574A1 (en) 2006-12-07
JP2005222687A (ja) 2005-08-18
CN1664953A (zh) 2005-09-07
US7502251B2 (en) 2009-03-10
DE102005004338B4 (de) 2009-04-09
DE102005004338A1 (de) 2005-09-01
CN1664953B (zh) 2011-09-28

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