CN1664953B - 相变存储器件和写相变存储器件的方法 - Google Patents

相变存储器件和写相变存储器件的方法 Download PDF

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Publication number
CN1664953B
CN1664953B CN2005100062460A CN200510006246A CN1664953B CN 1664953 B CN1664953 B CN 1664953B CN 2005100062460 A CN2005100062460 A CN 2005100062460A CN 200510006246 A CN200510006246 A CN 200510006246A CN 1664953 B CN1664953 B CN 1664953B
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China
Prior art keywords
pulse
write driver
pulse current
memory
memory cell
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Expired - Fee Related
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CN2005100062460A
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English (en)
Chinese (zh)
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CN1664953A (zh
Inventor
崔炳吉
郭忠根
金杜应
赵柏衡
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR10-2004-0007112A external-priority patent/KR100520228B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
CN2005100062460A 2004-02-04 2005-02-02 相变存储器件和写相变存储器件的方法 Expired - Fee Related CN1664953B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR7112/2004 2004-02-04
KR10-2004-0007112 2004-02-04
KR10-2004-0007112A KR100520228B1 (ko) 2004-02-04 2004-02-04 상변화 메모리 장치 및 그에 따른 데이터 라이팅 방법
US10/919,371 US7110286B2 (en) 2004-02-04 2004-08-17 Phase-change memory device and method of writing a phase-change memory device
US10/919,371 2004-08-17

Publications (2)

Publication Number Publication Date
CN1664953A CN1664953A (zh) 2005-09-07
CN1664953B true CN1664953B (zh) 2011-09-28

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US (1) US7502251B2 (enExample)
JP (1) JP4768280B2 (enExample)
CN (1) CN1664953B (enExample)
DE (1) DE102005004338B4 (enExample)

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US9558817B2 (en) 2011-10-28 2017-01-31 International Business Machines Corporation Conditioning phase change memory cells

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KR101176503B1 (ko) * 2009-09-04 2012-08-24 에스케이하이닉스 주식회사 라이트 드라이버를 구비한 상변화 메모리 장치
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CN101770807B (zh) * 2009-12-29 2013-03-27 中国科学院上海微系统与信息技术研究所 相变存储器的写优化电路及其写优化方法
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KR102217243B1 (ko) * 2014-10-28 2021-02-18 삼성전자주식회사 저항성 메모리 장치, 저항성 메모리 시스템 및 저항성 메모리 장치의 동작방법
CN105810242A (zh) * 2016-03-02 2016-07-27 中国科学院上海微系统与信息技术研究所 一种相变存储器和提高其疲劳寿命的操作方法
CN105869671B (zh) * 2016-03-25 2018-09-25 中国科学院上海微系统与信息技术研究所 相变存储器单元的写初始化方法及其阵列的写初始化方法
KR20180032391A (ko) 2016-09-22 2018-03-30 에스케이하이닉스 주식회사 반도체 메모리 장치
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KR102449194B1 (ko) 2017-11-17 2022-09-29 삼성전자주식회사 공통 모드 추출기를 포함하는 메모리 장치
KR102749204B1 (ko) * 2019-04-22 2025-01-06 삼성전자주식회사 상이한 동작 모드들에서 동작하는 뱅크들을 포함하는 불휘발성 메모리 장치, 메모리 컨트롤러의 동작 방법, 및 불휘발성 메모리 장치 및 메모리 컨트롤러를 포함하는 저장 장치
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KR102778101B1 (ko) * 2019-08-21 2025-03-11 에스케이하이닉스 주식회사 반도체 메모리 장치, 이를 포함하는 반도체 메모리 시스템, 및 반도체 메모리 시스템의 구동방법
IT201900019976A1 (it) * 2019-10-29 2021-04-29 St Microelectronics Srl Metodo di programmazione di un dispositivo di memoria a cambiamento di fase di tipo differenziale, dispositivo di memoria a cambiamento di fase, e sistema elettronico
CN110797064A (zh) * 2019-10-31 2020-02-14 重庆邮电大学 一种低功耗的相变存储器初始化操作方法
CN115035933B (zh) * 2022-06-30 2025-04-01 长江先进存储产业创新中心有限责任公司 一种相变存储器的操作方法、相变存储器及存储器系统

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Publication number Priority date Publication date Assignee Title
US9558817B2 (en) 2011-10-28 2017-01-31 International Business Machines Corporation Conditioning phase change memory cells

Also Published As

Publication number Publication date
US20060274574A1 (en) 2006-12-07
JP2005222687A (ja) 2005-08-18
CN1664953A (zh) 2005-09-07
US7502251B2 (en) 2009-03-10
DE102005004338B4 (de) 2009-04-09
DE102005004338A1 (de) 2005-09-01
JP4768280B2 (ja) 2011-09-07

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