JP4755961B2 - 窒化物半導体装置及びその製造方法 - Google Patents

窒化物半導体装置及びその製造方法 Download PDF

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JP4755961B2
JP4755961B2 JP2006267476A JP2006267476A JP4755961B2 JP 4755961 B2 JP4755961 B2 JP 4755961B2 JP 2006267476 A JP2006267476 A JP 2006267476A JP 2006267476 A JP2006267476 A JP 2006267476A JP 4755961 B2 JP4755961 B2 JP 4755961B2
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nitride semiconductor
semiconductor layer
layer
gate electrode
type
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JP2008091392A5 (enExample
JP2008091392A (ja
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正洋 引田
哲三 上田
学 柳原
康裕 上本
毅 田中
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2006267476A priority Critical patent/JP4755961B2/ja
Priority to US11/890,480 priority patent/US7898002B2/en
Publication of JP2008091392A publication Critical patent/JP2008091392A/ja
Priority to US13/010,238 priority patent/US8164115B2/en
Publication of JP2008091392A5 publication Critical patent/JP2008091392A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts

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  • Junction Field-Effect Transistors (AREA)
JP2006267476A 2006-09-29 2006-09-29 窒化物半導体装置及びその製造方法 Active JP4755961B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006267476A JP4755961B2 (ja) 2006-09-29 2006-09-29 窒化物半導体装置及びその製造方法
US11/890,480 US7898002B2 (en) 2006-09-29 2007-08-07 Nitride semiconductor device and method for fabricating the same
US13/010,238 US8164115B2 (en) 2006-09-29 2011-01-20 Nitride semiconductor device

Applications Claiming Priority (1)

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JP2006267476A JP4755961B2 (ja) 2006-09-29 2006-09-29 窒化物半導体装置及びその製造方法

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JP2011020627A Division JP4815020B2 (ja) 2011-02-02 2011-02-02 窒化物半導体装置
JP2011095622A Division JP2011142358A (ja) 2011-04-22 2011-04-22 窒化物半導体装置

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JP2008091392A JP2008091392A (ja) 2008-04-17
JP2008091392A5 JP2008091392A5 (enExample) 2011-03-17
JP4755961B2 true JP4755961B2 (ja) 2011-08-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269577B2 (en) 2012-10-26 2016-02-23 Furukawa Electric Co., Ltd. Method for manufacturing nitride semiconductor device

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Publication number Priority date Publication date Assignee Title
US9269577B2 (en) 2012-10-26 2016-02-23 Furukawa Electric Co., Ltd. Method for manufacturing nitride semiconductor device

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US7898002B2 (en) 2011-03-01
JP2008091392A (ja) 2008-04-17
US20080079023A1 (en) 2008-04-03
US20110114967A1 (en) 2011-05-19
US8164115B2 (en) 2012-04-24

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