JP4727422B2 - 半導体光検出素子及び放射線検出装置 - Google Patents
半導体光検出素子及び放射線検出装置 Download PDFInfo
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- JP4727422B2 JP4727422B2 JP2005514718A JP2005514718A JP4727422B2 JP 4727422 B2 JP4727422 B2 JP 4727422B2 JP 2005514718 A JP2005514718 A JP 2005514718A JP 2005514718 A JP2005514718 A JP 2005514718A JP 4727422 B2 JP4727422 B2 JP 4727422B2
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- 239000004065 semiconductor Substances 0.000 title claims description 125
- 238000001514 detection method Methods 0.000 title claims description 27
- 230000005855 radiation Effects 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 74
- 239000012535 impurity Substances 0.000 claims description 25
- 239000000969 carrier Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 238000003491 array Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
Description
Claims (6)
- 被検出光の入射面の反対面側にpn接合型の複数のホトダイオードが形成された半導体基板を備え、
前記半導体基板の前記入射面の反対面側において、前記複数のホトダイオードのうち隣接するホトダイオード間にpn接合領域が形成されており、
前記半導体基板の前記反対面側において、前記pn接合領域と前記ホトダイオードとの間に、前記半導体基板と同一導電型の高濃度不純物半導体領域が形成されており、
前記高濃度不純物半導体領域は、前記反対面側から見て、前記ホトダイオードを取り囲むように形成されているとともに、
前記半導体基板の前記反対面側に、前記pn接合領域と前記高濃度不純物半導体領域とに電気的に接続される電極が形成されており、
前記電極が接地電位に接続されることを特徴とする半導体光検出素子。 - 被検出光の入射面の反対面側にpn接合型の複数のホトダイオードが形成された半導体基板を備え、
前記半導体基板の前記入射面の反対面側において、前記複数のホトダイオードのうち隣接するホトダイオード間にpn接合領域が形成されており、
前記半導体基板の前記反対面側において、前記pn接合領域と前記ホトダイオードとの間に、前記半導体基板と同一導電型の高濃度不純物半導体領域が形成されており、
前記高濃度不純物半導体領域は、前記反対面側から見て、前記ホトダイオードを取り囲むように形成されているとともに、
前記半導体基板の前記反対面側に、前記pn接合領域に電気的に接続される第1電極と前記高濃度不純物半導体領域に電気的に接続される第2電極とが形成されており、
前記第1電極と前記第2電極とは、互いに電気的に絶縁された状態で各々が接地電位に接続されることを特徴とする半導体光検出素子。 - 前記pn接合領域は、前記反対面側から見て、前記ホトダイオードを取り囲むように形成されていることを特徴とする請求項1または2に記載の半導体光検出素子。
- 前記半導体基板及び前記高濃度不純物半導体領域は第1導電型であって、前記複数のホトダイオード及び前記pn接合領域は第2導電型不純物半導体領域と前記半導体基板とで構成されることを特徴とする請求項1〜3のいずれか一項に記載の半導体光検出素子。
- 前記半導体基板の前記反対面側に、前記複数のホトダイオードのそれぞれに電気的に接続され、バンプ電極を含む電極が形成されているとともに、
前記半導体基板に対向する面側に前記複数のホトダイオードのそれぞれと対応するように電極パッドが形成された支持部材を備え、前記複数のホトダイオードのそれぞれは、前記バンプ電極を介して前記支持部材の対応する前記電極パッドに電気的に接続されることを特徴とする請求項1〜4のいずれか一項に記載の半導体光検出素子。 - 請求項1〜5のいずれか一項に記載の半導体光検出素子と、
前記半導体基板の前記入射面側に位置し、放射線の入射により発光するシンチレータとを備えることを特徴とする放射線検出装置。
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JP2005514718A JP4727422B2 (ja) | 2003-10-20 | 2004-09-07 | 半導体光検出素子及び放射線検出装置 |
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JP2005514718A JP4727422B2 (ja) | 2003-10-20 | 2004-09-07 | 半導体光検出素子及び放射線検出装置 |
PCT/JP2004/012988 WO2005038923A1 (ja) | 2003-10-20 | 2004-09-07 | 半導体光検出素子及び放射線検出装置 |
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EP (1) | EP1677353B1 (ja) |
JP (2) | JP4727422B2 (ja) |
CN (1) | CN100433345C (ja) |
IL (1) | IL175082A (ja) |
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JP3963760B2 (ja) | 2002-04-03 | 2007-08-22 | 浜松ホトニクス株式会社 | エネルギー線弁別器 |
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US7170143B2 (en) * | 2003-10-20 | 2007-01-30 | Hamamatsu Photonics K.K. | Semiconductor photo-detection device and radiation apparatus |
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2004
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- 2004-09-07 JP JP2005514718A patent/JP4727422B2/ja active Active
- 2004-09-07 EP EP04787692A patent/EP1677353B1/en active Active
- 2004-09-07 CN CNB2004800234757A patent/CN100433345C/zh active Active
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011159984A (ja) * | 2003-10-20 | 2011-08-18 | Hamamatsu Photonics Kk | 半導体光検出素子及び放射線検出装置 |
US9099599B2 (en) | 2003-10-20 | 2015-08-04 | Hamamatsu Photonics K.K. | Semiconductor photo-detection device and radiation detection apparatus |
US9431567B2 (en) | 2003-10-20 | 2016-08-30 | Hamamatsu Photonics K.K. | Semiconductor photo-detection device and radiation detection apparatus |
US10908302B2 (en) | 2003-10-20 | 2021-02-02 | Hamamatsu Photonics K.K. | Semiconductor photo-detection device and radiation detection apparatus |
Also Published As
Publication number | Publication date |
---|---|
WO2005038923A1 (ja) | 2005-04-28 |
TWI355092B (en) | 2011-12-21 |
EP1677353A1 (en) | 2006-07-05 |
IL175082A0 (en) | 2006-08-20 |
US20140084172A1 (en) | 2014-03-27 |
TW200515609A (en) | 2005-05-01 |
IL175082A (en) | 2013-07-31 |
US10908302B2 (en) | 2021-02-02 |
US20160334518A1 (en) | 2016-11-17 |
EP1677353B1 (en) | 2012-02-08 |
CN1836331A (zh) | 2006-09-20 |
US20050082630A1 (en) | 2005-04-21 |
US9099599B2 (en) | 2015-08-04 |
US7170143B2 (en) | 2007-01-30 |
EP1677353A4 (en) | 2007-08-01 |
US20140084173A1 (en) | 2014-03-27 |
JP5405512B2 (ja) | 2014-02-05 |
JP2011159984A (ja) | 2011-08-18 |
JPWO2005038923A1 (ja) | 2007-11-22 |
CN100433345C (zh) | 2008-11-12 |
US8592934B2 (en) | 2013-11-26 |
US20070075344A1 (en) | 2007-04-05 |
US9431567B2 (en) | 2016-08-30 |
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