JP4723800B2 - アレイ基板の製造方法 - Google Patents
アレイ基板の製造方法 Download PDFInfo
- Publication number
- JP4723800B2 JP4723800B2 JP2003294583A JP2003294583A JP4723800B2 JP 4723800 B2 JP4723800 B2 JP 4723800B2 JP 2003294583 A JP2003294583 A JP 2003294583A JP 2003294583 A JP2003294583 A JP 2003294583A JP 4723800 B2 JP4723800 B2 JP 4723800B2
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- Prior art keywords
- insulating film
- gate
- thin film
- pair
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- Expired - Lifetime
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- 238000000034 method Methods 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims description 133
- 239000003990 capacitor Substances 0.000 claims description 75
- 239000011229 interlayer Substances 0.000 claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000000059 patterning Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 160
- 239000010409 thin film Substances 0.000 description 87
- 229910052751 metal Inorganic materials 0.000 description 47
- 239000002184 metal Substances 0.000 description 47
- 239000004973 liquid crystal related substance Substances 0.000 description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 229920005591 polysilicon Polymers 0.000 description 27
- 238000000206 photolithography Methods 0.000 description 16
- 238000009413 insulation Methods 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 14
- 239000011521 glass Substances 0.000 description 12
- 238000000605 extraction Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000007725 thermal activation Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
2 アレイ基板
3 透光性基板としてのガラス基板
4 n型スイッチング素子としてのnチャネル型の薄膜トランジスタ
5 p型スイッチング素子としてのpチャネル型の薄膜トランジスタ
6 補助容量としての画素補助容量
13 ソース領域
14 ドレイン領域
15 ゲート絶縁膜
16 ゲート電極
17 配線部
22 容量部
23 容量配線部
61 対向基板
65 液晶
71 多結晶半導体層としてのポリシリコン膜
72 第1の導電層としての第1の金属層
73 第2の導電層としての第2の金属層
81 層間絶縁膜としての第1の層間絶縁膜
82,83 導通部としてのコンタクトホール
Claims (1)
- 透光性基板の一主面に複数の多結晶半導体層を設け、
これら複数の多結晶半導体層を含む前記透光性基板の一主面にゲート絶縁膜を設け、
このゲート絶縁膜の一主面に第1の導電層を設け、
この第1の導電層をパターニングして前記複数の多結晶半導体層のいずれかに対向する一対のゲート電極を形成し、
これら一対のゲート電極のいずれか一をマスクとして、このゲート電極に対向した前記多結晶半導体層をドープしてp型スイッチング素子のソース領域およびドレイン領域とし、
これら一対のゲート電極のいずれか他をマスクとして、このゲート電極に対向した前記多結晶半導体層と、前記一対のゲート電極が対向して設けられていない多結晶半導体層とのそれぞれをドープして、n型スイッチング素子のソース領域およびドレイン領域と、補助容量の容量部とを形成し、
前記一対のゲート電極を含む前記ゲート絶縁膜の一主面に層間絶縁膜を形成し、
この層間絶縁膜に前記一対のゲート電極に連通する複数の導通部を形成し、
これら複数の導通部を含む前記層間絶縁膜上に第2の導電層を形成して、この第2の導電層を前記一対のゲート電極に電気的に接続させ、
前記第2の導電層をパターニングして、前記一対のゲート電極に対向する一対の配線部と、これら一対のゲート電極が対向して設けられていない前記多結晶半導体層に対向する容量配線部とのそれぞれを形成する
ことを特徴としたアレイ基板の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003294583A JP4723800B2 (ja) | 2003-08-18 | 2003-08-18 | アレイ基板の製造方法 |
KR1020057014038A KR20060036372A (ko) | 2003-08-18 | 2004-08-12 | 어레이 기판, 액정 표시 장치 및 어레이 기판의 제조 방법 |
CN 200480003008 CN1745480A (zh) | 2003-08-18 | 2004-08-12 | 阵列基底液晶显示装置和制作阵列基底的方法 |
PCT/JP2004/011610 WO2005018006A1 (ja) | 2003-08-18 | 2004-08-12 | アレイ基板、液晶表示装置およびアレイ基板の製造方法 |
TW93124851A TWI288845B (en) | 2003-08-18 | 2004-08-18 | Array substrate, liquid crystal display, and method of manufacturing array substrate |
US11/141,025 US20050218407A1 (en) | 2003-08-18 | 2005-06-01 | Array substrate, liquid crystal display device and method of manufacturing array substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003294583A JP4723800B2 (ja) | 2003-08-18 | 2003-08-18 | アレイ基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005064337A JP2005064337A (ja) | 2005-03-10 |
JP4723800B2 true JP4723800B2 (ja) | 2011-07-13 |
Family
ID=34191046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003294583A Expired - Lifetime JP4723800B2 (ja) | 2003-08-18 | 2003-08-18 | アレイ基板の製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4723800B2 (ja) |
KR (1) | KR20060036372A (ja) |
CN (1) | CN1745480A (ja) |
TW (1) | TWI288845B (ja) |
WO (1) | WO2005018006A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5060738B2 (ja) * | 2006-04-28 | 2012-10-31 | 株式会社ジャパンディスプレイイースト | 画像表示装置 |
TWI297548B (en) | 2006-06-19 | 2008-06-01 | Au Optronics Corp | Pixel structure for flat panel display and method for fabricating the same |
CN100414367C (zh) * | 2006-11-01 | 2008-08-27 | 友达光电股份有限公司 | 液晶显示结构及其制造方法 |
JP2010039444A (ja) * | 2008-08-08 | 2010-02-18 | Toshiba Mobile Display Co Ltd | 表示装置 |
JP5330124B2 (ja) * | 2009-07-02 | 2013-10-30 | 株式会社ジャパンディスプレイ | 光センサ内蔵画像表示装置 |
US9305939B2 (en) | 2012-06-08 | 2016-04-05 | Sharp Kabushiki Kaisha | Semiconductor device with oxide layer as transparent electrode |
KR102285384B1 (ko) * | 2014-09-15 | 2021-08-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 그 제조방법 및 표시 장치 |
KR101724278B1 (ko) * | 2014-12-02 | 2017-04-10 | 엘지디스플레이 주식회사 | 인셀 터치 액정 디스플레이 장치 |
KR20180079503A (ko) * | 2016-12-30 | 2018-07-11 | 삼성디스플레이 주식회사 | 도전 패턴 및 이를 구비하는 표시 장치 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0613615A (ja) * | 1992-04-10 | 1994-01-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH07104312A (ja) * | 1993-09-30 | 1995-04-21 | Sanyo Electric Co Ltd | 液晶表示装置の製造方法 |
JPH07318978A (ja) * | 1994-05-20 | 1995-12-08 | Sony Corp | 表示素子用薄膜トランジスタアレイ |
JPH08213626A (ja) * | 1995-01-31 | 1996-08-20 | Sony Corp | 薄膜半導体装置及びその製造方法 |
JPH1096956A (ja) * | 1996-09-24 | 1998-04-14 | Toshiba Corp | 液晶表示装置及びその製造方法 |
-
2003
- 2003-08-18 JP JP2003294583A patent/JP4723800B2/ja not_active Expired - Lifetime
-
2004
- 2004-08-12 KR KR1020057014038A patent/KR20060036372A/ko not_active Application Discontinuation
- 2004-08-12 WO PCT/JP2004/011610 patent/WO2005018006A1/ja active Application Filing
- 2004-08-12 CN CN 200480003008 patent/CN1745480A/zh active Pending
- 2004-08-18 TW TW93124851A patent/TWI288845B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2005064337A (ja) | 2005-03-10 |
CN1745480A (zh) | 2006-03-08 |
TW200510851A (en) | 2005-03-16 |
TWI288845B (en) | 2007-10-21 |
WO2005018006A1 (ja) | 2005-02-24 |
KR20060036372A (ko) | 2006-04-28 |
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EXPY | Cancellation because of completion of term |