TWI288845B - Array substrate, liquid crystal display, and method of manufacturing array substrate - Google Patents
Array substrate, liquid crystal display, and method of manufacturing array substrate Download PDFInfo
- Publication number
- TWI288845B TWI288845B TW93124851A TW93124851A TWI288845B TW I288845 B TWI288845 B TW I288845B TW 93124851 A TW93124851 A TW 93124851A TW 93124851 A TW93124851 A TW 93124851A TW I288845 B TWI288845 B TW I288845B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- gate
- conductive layer
- array substrate
- layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims description 161
- 239000003990 capacitor Substances 0.000 claims description 85
- 239000011229 interlayer Substances 0.000 claims description 57
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 29
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 4
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 183
- 239000010409 thin film Substances 0.000 abstract description 87
- 229910052751 metal Inorganic materials 0.000 abstract description 47
- 239000002184 metal Substances 0.000 abstract description 47
- 239000011521 glass Substances 0.000 abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 12
- 229920005591 polysilicon Polymers 0.000 abstract description 11
- 238000000059 patterning Methods 0.000 abstract description 5
- 238000000206 photolithography Methods 0.000 description 16
- 238000000605 extraction Methods 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 15
- 239000010936 titanium Substances 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 229910052732 germanium Inorganic materials 0.000 description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- -1 for example Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000007725 thermal activation Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical group [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003294583A JP4723800B2 (ja) | 2003-08-18 | 2003-08-18 | アレイ基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200510851A TW200510851A (en) | 2005-03-16 |
| TWI288845B true TWI288845B (en) | 2007-10-21 |
Family
ID=34191046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93124851A TWI288845B (en) | 2003-08-18 | 2004-08-18 | Array substrate, liquid crystal display, and method of manufacturing array substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4723800B2 (ja) |
| KR (1) | KR20060036372A (ja) |
| CN (1) | CN1745480A (ja) |
| TW (1) | TWI288845B (ja) |
| WO (1) | WO2005018006A1 (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5060738B2 (ja) * | 2006-04-28 | 2012-10-31 | 株式会社ジャパンディスプレイイースト | 画像表示装置 |
| TWI297548B (en) | 2006-06-19 | 2008-06-01 | Au Optronics Corp | Pixel structure for flat panel display and method for fabricating the same |
| CN100414367C (zh) * | 2006-11-01 | 2008-08-27 | 友达光电股份有限公司 | 液晶显示结构及其制造方法 |
| JP2010039444A (ja) * | 2008-08-08 | 2010-02-18 | Toshiba Mobile Display Co Ltd | 表示装置 |
| JP5330124B2 (ja) * | 2009-07-02 | 2013-10-30 | 株式会社ジャパンディスプレイ | 光センサ内蔵画像表示装置 |
| US9305939B2 (en) | 2012-06-08 | 2016-04-05 | Sharp Kabushiki Kaisha | Semiconductor device with oxide layer as transparent electrode |
| KR102285384B1 (ko) * | 2014-09-15 | 2021-08-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 그 제조방법 및 표시 장치 |
| KR101724278B1 (ko) * | 2014-12-02 | 2017-04-10 | 엘지디스플레이 주식회사 | 인셀 터치 액정 디스플레이 장치 |
| KR20180079503A (ko) * | 2016-12-30 | 2018-07-11 | 삼성디스플레이 주식회사 | 도전 패턴 및 이를 구비하는 표시 장치 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613615A (ja) * | 1992-04-10 | 1994-01-21 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH07104312A (ja) * | 1993-09-30 | 1995-04-21 | Sanyo Electric Co Ltd | 液晶表示装置の製造方法 |
| JPH07318978A (ja) * | 1994-05-20 | 1995-12-08 | Sony Corp | 表示素子用薄膜トランジスタアレイ |
| JPH08213626A (ja) * | 1995-01-31 | 1996-08-20 | Sony Corp | 薄膜半導体装置及びその製造方法 |
| JPH1096956A (ja) * | 1996-09-24 | 1998-04-14 | Toshiba Corp | 液晶表示装置及びその製造方法 |
-
2003
- 2003-08-18 JP JP2003294583A patent/JP4723800B2/ja not_active Expired - Lifetime
-
2004
- 2004-08-12 KR KR1020057014038A patent/KR20060036372A/ko not_active Application Discontinuation
- 2004-08-12 WO PCT/JP2004/011610 patent/WO2005018006A1/ja active Application Filing
- 2004-08-12 CN CN 200480003008 patent/CN1745480A/zh active Pending
- 2004-08-18 TW TW93124851A patent/TWI288845B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005064337A (ja) | 2005-03-10 |
| CN1745480A (zh) | 2006-03-08 |
| TW200510851A (en) | 2005-03-16 |
| WO2005018006A1 (ja) | 2005-02-24 |
| JP4723800B2 (ja) | 2011-07-13 |
| KR20060036372A (ko) | 2006-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI227565B (en) | Low temperature poly-Si thin film transistor and method of manufacturing the same | |
| EP2579237A1 (en) | Thin film transistor substrate and method for producing same | |
| TW200820445A (en) | Display device and method of manufacturing the display device | |
| JP2009124159A (ja) | 薄膜トランジスタ | |
| TWI297548B (en) | Pixel structure for flat panel display and method for fabricating the same | |
| US7642141B2 (en) | Manufacturing method for display device | |
| KR102169014B1 (ko) | 박막트랜지스터 어레이 기판 및 그 제조방법 | |
| TWI237892B (en) | Method of forming thin-film transistor devices with electro-static discharge protection | |
| TWI288845B (en) | Array substrate, liquid crystal display, and method of manufacturing array substrate | |
| KR100644122B1 (ko) | 박막 반도체 소자 및 박막 반도체 소자의 제조방법 | |
| US20050218407A1 (en) | Array substrate, liquid crystal display device and method of manufacturing array substrate | |
| JP3799915B2 (ja) | 電気光学装置の製造方法並びに半導体基板及び電気光学装置 | |
| JP3105408B2 (ja) | 液晶表示素子 | |
| JP4507546B2 (ja) | 半導体装置の製造方法 | |
| US20060267015A1 (en) | Thin film transistor, production method thereof and liquid crystal display device | |
| JP4537610B2 (ja) | 液晶表示装置及びその製造方法 | |
| JP4442189B2 (ja) | 半導体装置、平面表示装置およびそれらの製造方法 | |
| JPH10209452A (ja) | 薄膜トランジスタ及びその製造方法 | |
| JPH10133231A (ja) | 多層配線構造およびその製造方法と薄膜トランジスタアレイおよびその製造方法と液晶表示装置 | |
| JP3868735B2 (ja) | 半導体装置 | |
| KR20070002778A (ko) | 박막 트랜지스터 기판 및 그 제조 방법 | |
| JP2005158935A (ja) | 電気光学装置用基板、電気光学装置用基板の製造方法、電気光学装置および電子機器 | |
| JP2004071590A (ja) | 薄膜トランジスタを備えた装置およびその製造方法 | |
| JP2004119923A (ja) | 半導体装置およびその製造方法 | |
| JP3375915B2 (ja) | 半導体装置の作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |