TW200510851A - Array substrate, liquid crystal display, and method of manufacturing array substrate - Google Patents

Array substrate, liquid crystal display, and method of manufacturing array substrate

Info

Publication number
TW200510851A
TW200510851A TW093124851A TW93124851A TW200510851A TW 200510851 A TW200510851 A TW 200510851A TW 093124851 A TW093124851 A TW 093124851A TW 93124851 A TW93124851 A TW 93124851A TW 200510851 A TW200510851 A TW 200510851A
Authority
TW
Taiwan
Prior art keywords
array substrate
liquid crystal
crystal display
insulating film
gate insulating
Prior art date
Application number
TW093124851A
Other languages
Chinese (zh)
Other versions
TWI288845B (en
Inventor
Yuki Matsuura
Arichika Ishida
Original Assignee
Toshiba Matsushita Display Tec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Matsushita Display Tec filed Critical Toshiba Matsushita Display Tec
Publication of TW200510851A publication Critical patent/TW200510851A/en
Application granted granted Critical
Publication of TWI288845B publication Critical patent/TWI288845B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Abstract

The present invention forms a gate insulating film (15) on a glass substrate (3) having a plurality of island-like polysilicon films (71) formed thereon. By patterning a first metal layer (72) formed on the gate insulating film (15), a gate electrode (16) is formed on the gate insulating film in a position opposing to a part of the polysilicon layer (11) that is to be a thin film transistor (4, 5). A second metal layer (73) is formed on the gate insulating film (15) that comprises the gate electrode (16). A wiring portion (17) is laminated on the gate electrode (16) of the thin film transistor (4, 5).
TW93124851A 2003-08-18 2004-08-18 Array substrate, liquid crystal display, and method of manufacturing array substrate TWI288845B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003294583A JP4723800B2 (en) 2003-08-18 2003-08-18 Method for manufacturing array substrate

Publications (2)

Publication Number Publication Date
TW200510851A true TW200510851A (en) 2005-03-16
TWI288845B TWI288845B (en) 2007-10-21

Family

ID=34191046

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93124851A TWI288845B (en) 2003-08-18 2004-08-18 Array substrate, liquid crystal display, and method of manufacturing array substrate

Country Status (5)

Country Link
JP (1) JP4723800B2 (en)
KR (1) KR20060036372A (en)
CN (1) CN1745480A (en)
TW (1) TWI288845B (en)
WO (1) WO2005018006A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5060738B2 (en) * 2006-04-28 2012-10-31 株式会社ジャパンディスプレイイースト Image display device
TWI297548B (en) 2006-06-19 2008-06-01 Au Optronics Corp Pixel structure for flat panel display and method for fabricating the same
CN100414367C (en) * 2006-11-01 2008-08-27 友达光电股份有限公司 Liquid crystal display structure and its producing method
JP2010039444A (en) * 2008-08-08 2010-02-18 Toshiba Mobile Display Co Ltd Display
JP5330124B2 (en) * 2009-07-02 2013-10-30 株式会社ジャパンディスプレイ Image display device with built-in optical sensor
US9305939B2 (en) 2012-06-08 2016-04-05 Sharp Kabushiki Kaisha Semiconductor device with oxide layer as transparent electrode
KR102285384B1 (en) * 2014-09-15 2021-08-04 삼성디스플레이 주식회사 Thin film transistor array substrate and manufacturing method for the same and display
KR101724278B1 (en) * 2014-12-02 2017-04-10 엘지디스플레이 주식회사 In Cell touch Liquid Crystal Display Device
KR20180079503A (en) * 2016-12-30 2018-07-11 삼성디스플레이 주식회사 Conductive pattern and display device having the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0613615A (en) * 1992-04-10 1994-01-21 Fujitsu Ltd Manufacture of semiconductor device
JPH07104312A (en) * 1993-09-30 1995-04-21 Sanyo Electric Co Ltd Production of liquid crystal display device
JPH07318978A (en) * 1994-05-20 1995-12-08 Sony Corp Thin-film transistor array for display element
JPH08213626A (en) * 1995-01-31 1996-08-20 Sony Corp Thin film semiconductor device and its manufacture
JPH1096956A (en) * 1996-09-24 1998-04-14 Toshiba Corp Liquid crystal display device and its production

Also Published As

Publication number Publication date
WO2005018006A1 (en) 2005-02-24
KR20060036372A (en) 2006-04-28
CN1745480A (en) 2006-03-08
TWI288845B (en) 2007-10-21
JP2005064337A (en) 2005-03-10
JP4723800B2 (en) 2011-07-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees