JP4718463B2 - パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体 - Google Patents

パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体 Download PDF

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Publication number
JP4718463B2
JP4718463B2 JP2006523841A JP2006523841A JP4718463B2 JP 4718463 B2 JP4718463 B2 JP 4718463B2 JP 2006523841 A JP2006523841 A JP 2006523841A JP 2006523841 A JP2006523841 A JP 2006523841A JP 4718463 B2 JP4718463 B2 JP 4718463B2
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alkyl
group
formula
hydrogen
combinations
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Japanese (ja)
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JP2007502814A (ja
JP2007502814A5 (enExample
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エム. フライン,リチャード
ジェイ. ペルリート,マーク
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/28Phosphorus compounds with one or more P—C bonds
    • C07F9/38Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/28Phosphorus compounds with one or more P—C bonds
    • C07F9/38Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3808Acyclic saturated acids which can have further substituents on alkyl
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02Phosphorus compounds
    • C07F9/28Phosphorus compounds with one or more P—C bonds
    • C07F9/38Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3882Arylalkanephosphonic acids
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Paints Or Removers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Detergent Compositions (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
JP2006523841A 2003-08-21 2004-07-07 パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体 Expired - Fee Related JP4718463B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49683703P 2003-08-21 2003-08-21
US60/496,837 2003-08-21
PCT/US2004/021713 WO2005023822A1 (en) 2003-08-21 2004-07-07 Perfluoropolyether amide-linked phosphonates, phosphates, and derivatives thereof

Publications (3)

Publication Number Publication Date
JP2007502814A JP2007502814A (ja) 2007-02-15
JP2007502814A5 JP2007502814A5 (enExample) 2007-08-09
JP4718463B2 true JP4718463B2 (ja) 2011-07-06

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JP2006523841A Expired - Fee Related JP4718463B2 (ja) 2003-08-21 2004-07-07 パーフルオロポリエーテルアミド連結ホスホネート、ホスフェートおよびそれらの誘導体

Country Status (8)

Country Link
US (1) US7678426B2 (enExample)
EP (1) EP1656385B1 (enExample)
JP (1) JP4718463B2 (enExample)
KR (1) KR20060080920A (enExample)
CN (1) CN100558735C (enExample)
AT (1) ATE346852T1 (enExample)
DE (1) DE602004003506T2 (enExample)
WO (1) WO2005023822A1 (enExample)

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ITMI20051533A1 (it) * 2005-08-04 2007-02-05 Solvay Solexis Spa Usi di composti fluororurati per il trattamento protettivo di superfici in titanio
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US7824755B2 (en) * 2006-06-29 2010-11-02 3M Innovative Properties Company Fluorinated leveling agents
CN101528975B (zh) * 2006-10-20 2012-05-23 3M创新有限公司 用于易于清洁的基底的方法以及由其制得的制品
US7825272B2 (en) * 2006-12-20 2010-11-02 3M Innovative Properties Company Fluorochemical urethane compounds having pendent silyl groups
WO2008147796A1 (en) * 2007-05-23 2008-12-04 3M Innovative Properties Company Aqueous compositions of fluorinated surfactants and methods of using the same
CN101679569A (zh) * 2007-06-06 2010-03-24 3M创新有限公司 氟化醚组合物以及使用该组合物的方法
WO2008154278A2 (en) * 2007-06-06 2008-12-18 3M Innovative Properties Company Fluorinated compositions and surface treatments made therefrom
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US20090041986A1 (en) * 2007-06-21 2009-02-12 3M Innovative Properties Company Method of making hierarchical articles
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US8071277B2 (en) * 2007-12-21 2011-12-06 3M Innovative Properties Company Method and system for fabricating three-dimensional structures with sub-micron and micron features
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JP2011528659A (ja) * 2008-07-18 2011-11-24 スリーエム イノベイティブ プロパティズ カンパニー フッ素化エーテル化合物及びその使用方法
WO2010062843A1 (en) * 2008-11-25 2010-06-03 3M Innovative Properties Company Fluorinated ether urethanes and methods of using the same
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US9096712B2 (en) 2009-07-21 2015-08-04 3M Innovative Properties Company Curable compositions, method of coating a phototool, and coated phototool
WO2011034845A1 (en) 2009-09-16 2011-03-24 3M Innovative Properties Company Fluorinated coating and phototools made therewith
US8268067B2 (en) 2009-10-06 2012-09-18 3M Innovative Properties Company Perfluoropolyether coating composition for hard surfaces
JP6345935B2 (ja) 2010-10-28 2018-06-20 スリーエム イノベイティブ プロパティズ カンパニー 細菌付着を低減するための加工表面
EP2635622A4 (en) 2010-11-02 2014-04-16 3M Innovative Properties Co SILOXANPROPOPOPOLYMERS FOR FORMING SOLUTION
EP2635614B1 (en) 2010-11-04 2015-08-12 3M Innovative Properties Company Fluorinated composition comprising phosphorus containing acid group and alkoxy silane group
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JP6488890B2 (ja) * 2015-06-03 2019-03-27 信越化学工業株式会社 フルオロオキシアルキレン基含有ポリマー変性ホスホン酸誘導体、該誘導体を含む表面処理剤、該表面処理剤で処理された物品及び光学物品
JP6520419B2 (ja) * 2015-06-04 2019-05-29 信越化学工業株式会社 フルオロオキシアルキレン基含有ポリマー変性ホスホン酸誘導体及び該誘導体を含む表面処理剤、該表面処理剤で処理された物品及び光学物品
CN108137798B (zh) * 2015-10-09 2020-06-09 信越化学工业株式会社 含有氟代氧化亚烷基的聚合物改性膦酸衍生物、以及对应的表面处理剂和表面处理方法
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Also Published As

Publication number Publication date
US20050048288A1 (en) 2005-03-03
KR20060080920A (ko) 2006-07-11
DE602004003506T2 (de) 2007-09-20
DE602004003506D1 (de) 2007-01-11
CN1839141A (zh) 2006-09-27
ATE346852T1 (de) 2006-12-15
EP1656385B1 (en) 2006-11-29
JP2007502814A (ja) 2007-02-15
CN100558735C (zh) 2009-11-11
EP1656385A1 (en) 2006-05-17
US7678426B2 (en) 2010-03-16
WO2005023822A1 (en) 2005-03-17

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