JP4694552B2 - 電気エネルギを蓄積する磁性コンデンサ - Google Patents
電気エネルギを蓄積する磁性コンデンサ Download PDFInfo
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- JP4694552B2 JP4694552B2 JP2007290306A JP2007290306A JP4694552B2 JP 4694552 B2 JP4694552 B2 JP 4694552B2 JP 2007290306 A JP2007290306 A JP 2007290306A JP 2007290306 A JP2007290306 A JP 2007290306A JP 4694552 B2 JP4694552 B2 JP 4694552B2
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- electrical energy
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- magnetic
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- 239000003990 capacitor Substances 0.000 title description 4
- 239000002184 metal Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims 2
- 238000004880 explosion Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004146 energy storage Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/015—Special provisions for self-healing
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Thin Magnetic Films (AREA)
- Semiconductor Integrated Circuits (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
110a 磁性セクション
110b 磁性セクション
110c 磁性セクション
110d 磁性セクション
115 ダイポール
115a ダイポール
115b ダイポール
115c ダイポール
115d ダイポール
120 第2の磁性セクション
125 ダイポール
130 誘電体セクション
130a 誘電体セクション
130b 誘電体セクション
130c 誘電体セクション
140 第1の金属デバイス
150 第2の金属デバイス
260 電源
370 負荷デバイス
Claims (15)
- 第1の磁性セクションと、
第2の磁性セクションと、
前記第1の磁性セクションと前記第2の磁性セクションとの間に配置された誘電体セクションと、を備え、
前記誘電体セクションにより電気エネルギを蓄積し、ダイポールをそれぞれに有する前記第1の磁性セクションおよび前記第2の磁性セクションにより電流リークを防ぎ、
電気エネルギを蓄積するとき、前記第1の磁性セクションの前記ダイポールと前記第2の磁性セクションの前記ダイポールとが同じ向きであることを特徴とする電気エネルギを蓄積する装置。 - 前記誘電体セクションは薄膜であることを特徴とする請求項1に記載の電気エネルギを蓄積する装置。
- 前記誘電体セクションは誘電体材料からなることを特徴とする請求項1に記載の電気エネルギを蓄積する装置。
- 前記第1の磁性セクションまたは前記第2の磁性セクションは薄膜であることを特徴とする請求項1に記載の電気エネルギを蓄積する装置。
- 前記第1の磁性セクションに隣接して配置され、前記第1の磁性セクションの前記ダイポールを制御する第1の金属デバイスをさらに備えることを特徴とする請求項1に記載の電気エネルギを蓄積する装置。
- 前記第2の磁性セクションに隣接して配置され、前記第2の磁性セクションの前記ダイポールを制御する第2の金属デバイスをさらに備えることを特徴とする請求項1に記載の電気エネルギを蓄積する装置。
- 前記電気エネルギを蓄積する装置を充電するときに、前記第1の磁性セクションおよび前記第2の磁性セクションが電源に接続されることを特徴とする請求項1に記載の電気エネルギを蓄積する装置。
- 前記電気エネルギを蓄積する装置を放電するときに、前記第1の磁性セクションおよび前記第2の磁性セクションが負荷デバイスに接続されることを特徴とする請求項1に記載の電気エネルギを蓄積する装置。
- 複数の磁性セクションと、
2つの隣接する前記磁性セクション間にそれぞれ配置された複数の誘電体セクションと、を備え、
前記誘電体セクションにより電気エネルギを蓄積し、ダイポールをそれぞれに有する前記磁性セクションにより電流リークを防ぎ、
電気エネルギを蓄積するとき、前記磁性セクションの前記ダイポール同士が同じ向きであることを特徴とする電気エネルギを蓄積する装置。 - 前記誘電体セクションは薄膜であることを特徴とする請求項9に記載の電気エネルギを蓄積する装置。
- 前記誘電体セクションは誘電体材料からなることを特徴とする請求項9に記載の電気エネルギを蓄積する装置。
- 前記磁性セクションは薄膜であることを特徴とする請求項9に記載の電気エネルギを蓄積する装置。
- 前記磁性セクションに隣接して配置され、各磁性セクションの前記ダイポールをそれぞれ制御する複数の金属デバイスをさらに備えることを特徴とする請求項9に記載の電気エネルギを蓄積する装置。
- 前記電気エネルギを蓄積する装置を充電するときに、前記磁性セクションの一部が電源に接続されることを特徴とする請求項9に記載の電気エネルギを蓄積する装置。
- 前記電気エネルギを蓄積する装置を放電するときに、前記磁性セクションの一部が負荷デバイスに接続されることを特徴とする請求項9に記載の電気エネルギを蓄積する装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/624,738 US20080174936A1 (en) | 2007-01-19 | 2007-01-19 | Apparatus and Method to Store Electrical Energy |
US11/624,738 | 2007-01-19 |
Publications (2)
Publication Number | Publication Date |
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JP2008177536A JP2008177536A (ja) | 2008-07-31 |
JP4694552B2 true JP4694552B2 (ja) | 2011-06-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007290306A Expired - Fee Related JP4694552B2 (ja) | 2007-01-19 | 2007-11-08 | 電気エネルギを蓄積する磁性コンデンサ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080174936A1 (ja) |
JP (1) | JP4694552B2 (ja) |
CN (1) | CN101227103B (ja) |
DE (1) | DE102007033252A1 (ja) |
FR (1) | FR2913282A1 (ja) |
GB (1) | GB2445811B (ja) |
TW (1) | TWI395241B (ja) |
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US20100193906A1 (en) * | 2009-02-05 | 2010-08-05 | Northern Lights Semiconductor Corp. | Integrated Circuit Package for Magnetic Capacitor |
US20100194331A1 (en) * | 2009-02-05 | 2010-08-05 | James Chyi Lai | electrical device having a power source with a magnetic capacitor as an energy storage device |
JP2011003892A (ja) * | 2009-06-18 | 2011-01-06 | Northern Lights Semiconductor Corp | Dramセル |
TW201135766A (en) * | 2010-04-01 | 2011-10-16 | Chien-Chiang Chan | Energy storage device |
US9607764B2 (en) * | 2010-10-20 | 2017-03-28 | Chun-Yen Chang | Method of fabricating high energy density and low leakage electronic devices |
CN102683007A (zh) * | 2011-03-07 | 2012-09-19 | 詹前疆 | 储电元件 |
CN103890885A (zh) | 2011-08-18 | 2014-06-25 | Enzo设计株式会社 | 薄膜电容器装置 |
US9263189B2 (en) | 2013-04-23 | 2016-02-16 | Alexander Mikhailovich Shukh | Magnetic capacitor |
JP2016537827A (ja) | 2013-10-01 | 2016-12-01 | イー1023 コーポレイションE1023 Corporation | 磁気強化型エネルギー貯蔵システムおよび方法 |
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US20080174933A1 (en) * | 2007-01-19 | 2008-07-24 | Western Lights Semiconductor Corp. | Apparatus and Method to Store Electrical Energy |
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2007
- 2007-01-19 US US11/624,738 patent/US20080174936A1/en not_active Abandoned
- 2007-07-16 GB GB0713771A patent/GB2445811B/en not_active Expired - Fee Related
- 2007-07-17 DE DE102007033252A patent/DE102007033252A1/de not_active Withdrawn
- 2007-09-07 TW TW096133528A patent/TWI395241B/zh not_active IP Right Cessation
- 2007-09-28 CN CN200710151597XA patent/CN101227103B/zh not_active Expired - Fee Related
- 2007-11-08 JP JP2007290306A patent/JP4694552B2/ja not_active Expired - Fee Related
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2008
- 2008-01-07 FR FR0800066A patent/FR2913282A1/fr not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002359356A (ja) * | 2001-03-29 | 2002-12-13 | Toshiba Corp | 半導体記憶装置 |
US20050052902A1 (en) * | 2003-09-08 | 2005-03-10 | Smith Kenneth K. | Memory device with a thermally assisted write |
JP2006352147A (ja) * | 2006-07-11 | 2006-12-28 | Toshiba Corp | 磁気記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
GB0713771D0 (en) | 2007-08-22 |
US20080174936A1 (en) | 2008-07-24 |
DE102007033252A1 (de) | 2008-07-31 |
CN101227103B (zh) | 2011-04-06 |
JP2008177536A (ja) | 2008-07-31 |
TWI395241B (zh) | 2013-05-01 |
TW200832464A (en) | 2008-08-01 |
GB2445811B (en) | 2009-01-07 |
FR2913282A1 (fr) | 2008-09-05 |
GB2445811A (en) | 2008-07-23 |
CN101227103A (zh) | 2008-07-23 |
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