CN101227103B - 电能储存装置及方法 - Google Patents
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- 239000012212 insulator Substances 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
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Abstract
一种用以储存电能的装置,此种装置具有一第一磁性区,一第二磁性区以及配置于第一磁性区及第二磁性区之间的一介电区。其中本装置,是利用介电区来储存电能以及利用第一磁性区和第二磁性区的双极来防止电能的泄漏。本装置还具有一第一金属组件配置于该第一磁性区周围,用以控制该第一磁性区的双极;以及一第二金属组件配置于该第二磁性区周围,用以控制该第二磁性区的双极。
Description
技术领域
本发明涉及一种电能储存装置及方法,特别涉及一种用以储存电能的磁性设备。
背景技术
能源的储存部件在我们的生活之中占了重要的一部分,例如用于电路中的电容以及用于可携式装置的电池的类的组件,电能储存部件影响了电子装置的执行效能以及作业时间。
然而,现有的能源储存部件具有一些问题。举例而言,电容具有因为漏电流而降低整体效能的问题,而电池则具有因为部分充/放电的记忆效应而降低整体效能的问题。
巨磁阻效应(Giant Magnetoresistance Effect,GMR)是一种能够自具有薄磁性或薄非磁性区的结构中,所观测到的量子物理效应。巨磁阻效应显现出了电阻对外加电场产生反应,从零场(zero-field)高阻抗状态至高场(high-field)低阻抗状态时的显着变化。
因此,可以利用巨磁阻效应来作成高效能绝缘体,如此具有巨磁阻效应的装置能够被用来储存电能。从上述理由看来,对于此种具有巨磁阻效应的电能储存装置是有着实际的需求。
发明内容
因此本发明的一目的在于提供一种电能储存装置及方法。
依据本发明的一种实施例,本装置具有一第一磁性区,一第二磁性区以及配置于第一磁性区及第二磁性区之间的一介电区。其中本装置是利用介电区来储存电能以及利用第一磁性区和第二磁性区的双极来防止电能的泄漏。本装置还具有一第一金属组件配置于该第一磁性区周围,用以控制该第一磁性区的双极;以及一第二金属组件配置于该第二磁性区周围,用以控制该第二磁性区的双极。
依据本发明的另一实施例,本电能储存装置具有多个磁性区以及多个分别配置于两相邻的磁性区之间的介电区,以及数个金属组件分别配置于该些磁性区周围,用以分别控制每一该些磁性区的双极,其中这些介电区被用来储存电能,而具有双极的磁性区则是被用来防止电能泄漏。
和一般所理解的相同,前述的概略性说明以及下述的细节性说明皆是以范例说明的方式进行,并且是用以对本发明中宣告申请专利范围的部分提供更进一步的解释。
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。
附图说明
图1为本发明的一实施例的一电能储存装置;
图2为本发明的装置在依据本发明的一实施例充电时的状态;
图3为本发明的装置在依据本发明的一实施例放电时的状态;
图4为本发明的另一实施例的一电能储存装置。
其中,附图标记
110、120:磁性区
115、125:双极
130:介电区
140、150:金属组件
260:电源
370:负载组件
110a、110b、110c、110d:磁性区
115a、115b、115c、115d:双极
130a、130b、130c:介电区
具体实施方式
下面参照本发明的较佳实施例的详细说明,其中所提到的范例会连同附图一同进行说明。在任何可能的情况之下,附图及说明中所使用的相同的参考数标都代表了相同的或类似的部件。
在本说明中,是以能够简明地解释本发明的基本原理作为出发点来绘示当中所有的附图,而自本说明中的附图,从用以组成本发明实施例的各个部件的数量、位置、关联性及尺寸等观点来看,所引伸而出的各种概念将会于本说明当中解释,或亦能在了解了本发明说明的内容之后,为本发明相关技术领域的技术人员所理解。
图1为本发明的一实施例的电能储存装置,此种电能储存装置具有一第一磁性区110、一第二磁性区120以及配置于第一磁性区110及第二磁性区120之间的一介电区130。介电区130具有储存电能的作用,而具有双极(如标记115及125所示)则具有防止电能泄漏的作用。
介电区130为一层薄膜,并且其由介电材料所构成,如钛酸钡(BaTiO3)或二氧化钛(TiO3)。然而,介电材料并非完美的绝缘体,所以此时仍会有少量的电流流经介电区130。
因此,必须利用第一磁性区110及第二磁性区120来产生能够防止电流流失(即电能泄漏)的绝缘效应。第一磁性区110和第二磁性区120都是一层薄膜,并且这两个具有双极的磁性区有着防止电能泄露的效用。
本装置更具有配置于第一磁性区110周围的一第一金属组件140,其中此第一金属组件140具有控制第一磁性区110的双极115的作用。另外本装置亦更具有配置于第二磁性区120周围的一第二金属组件150,其中此第二金属组件150具有控制第二磁性区120的双极125的作用。设计者或使用者可以利用这些第一金属组件140及第二金属组件150来施加外加电场以控制第一磁性区110及第二磁性区120的双极。
第一金属组件140及第二金属组件150于图1中所绘示的位置并非用以限制金属组件的实际位置,设计者可以依据实际的需求来配置这些金属组件。
上述内容可知,设计者可以利用第一金属组件140及第二金属组件150来控制第一磁性区110的双极115及第二磁性区120的双极125,并且在利用介电区130配合双极115及125之后,能够储存电能并且防止电能泄漏。当本装置储存着电能时,第一磁性区110的双极115及第二磁性区120的双极125是相同的。因此,第一磁性区110及第二磁性区120防止了电能的泄漏,并且介电区130亦储存着电能。
也就是说,当第一磁性区110的双极115和第二磁性区120的双极125为相同时,介电区130的电子的旋转方向会指向一个方向,为此也解决了电流泄漏的现象。在解决了电流泄漏的现象之后,电能的储存时间能够更长,电能的损失也能够更少。
图2为本装置在依据本发明的一实施例进行充电时的状态。当本装置在充电时,第一磁性区110和第二磁性区120会耦接至一电源260,此时电能会自电源260输入介电区130。
图3为本装置在依据本发明的一实施例进行放电时的状态。当本装置在放电时,第一磁性区110和第二磁性区120会耦接至一负载组件370,此时电能会自介电区130往负载组件370输出。
电源或负载组件能够容易地对磁性区110及120的双极造成影响,使得磁性区110及120无法具有很好的绝缘效应,让电流能够穿透这些磁性区。
本发明的装置可被视为具有大容量的电容,甚至可将本装置当做一个电池来使用,而且本装置虽具有电池的功能但却没有电池的记忆效应的问题。也就是说,在对本装置进行完整性或部分性充电/放电时,不会有效能上的损失。
除此之外,亦可以利用本装置来建立一个大型的平行组件数组以得到一个更加庞大的能量储存体。进一步来说,可将多个本发明的装置如图4所示一般堆栈起来以得到一个更加庞大的能量储存体。
图4所示的实施例中使用了四个磁性区110a、110b、110c、110d以及三个介电区130a、130b和130c。本电能储存装置具有数个磁性区110a、110b、110c、110d以及分别配置于两个邻近的磁性区中间的数个介电区130a、130b和130c。举例来说,介电区130a会被配置在磁性区110a及110b之间,而介电区130b则会被配置在磁性区110b及110c之间。这些介电区130a、130b及130c是被设计用来储存电能,而具有双极115a、115b、115c及115d的磁性区110a、110b、110c及110d则是被设计用来防止电能泄漏。
本装置更具有分别被配置在磁性区周围,用以控制磁性区的双极的数个金属组件(未绘示于图式中)。
当本装置中储存着电能的时候,磁性区110a、110b、110c及110d的双极115a、115b、115c及115d都会是相同的。
当对本装置进行充电的时候,会有部分的磁性区与一电源耦接,而当对本装置进行放电的时候,则会有部分的磁性区与一负载组件耦接。也就是说,当对本装置进行充电或放电的时候,磁性区110a及110d会与电源或负载组件耦接,或是所有的磁性区110a、110b、110c及110d皆与电源或负载组件耦接。
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。
Claims (11)
1.一种电能储存装置,其特征在于,包含:
一第一磁性区;
一第二磁性区;以及
一介电区配置于该第一磁性区及该第二磁性区之间,
其中该介电区被用以储存电能,以及具有数个双极的该第一磁性区及该第二磁性区被用以防止电能泄漏;
一第一金属组件配置于该第一磁性区周围,用以控制该第一磁性区的双极;以及
一第二金属组件配置于该第二磁性区周围,用以控制该第二磁性区的双极。
2.根据权利要求1所述的电能储存装置,其特征在于,该第一磁性区为一薄膜。
3.根据权利要求1所述的电能储存装置,其特征在于,该第二磁性区为一薄膜。
4.根据权利要求1所述的电能储存装置,其特征在于,当该电能储存装置储存着电能时,该第一磁性区及该第二磁性区的双极相同。
5.根据权利要求1所述的电能储存装置,其特征在于,当该电能储存装置于充电时,该第一磁性区及第二磁性区与一电源耦接。
6.根据权利要求1所述的电能储存装置,其特征在于,当该电能储存装置于放电时,该第一磁性区及第二磁性区与一负载组件耦接。
7.一种电能储存装置,其特征在于,包含:
数个磁性区;以及
数个介电区分别配置于两相邻的该些磁性区之间;以及
数个金属组件分别配置于该些磁性区周围,用以分别控制每一该些磁性区的双极,
其中该些介电区被用以储存电能,以及具有数个双极的该些磁性区被用以防止电能泄漏。
8.根据权利要求7所述的电能储存装置,其特征在于,该些磁性区为数个薄膜。
9.根据权利要求7所述的电能储存装置,其特征在于,当该电能储存装置储存着电能时,该些磁性区的双极相同。
10.根据权利要求7所述的电能储存装置,其特征在于,当该电能储存装置于充电时,部分的该些磁性区与一电源耦接。
11.根据权利要求7所述的电能储存装置,其特征在于,当该电能储存装置于放电时,部分的该些磁性区与一负载组件耦接。
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US11/624,738 US20080174936A1 (en) | 2007-01-19 | 2007-01-19 | Apparatus and Method to Store Electrical Energy |
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GB2466840B (en) * | 2009-01-12 | 2011-02-23 | Northern Lights Semiconductor | A parallel plate magnetic capacitor and electric energy storage device |
US20090095338A1 (en) * | 2007-10-11 | 2009-04-16 | James Chyl Lai | Solar power source |
US20090257168A1 (en) * | 2008-04-11 | 2009-10-15 | Northern Lights Semiconductor Corp. | Apparatus for Storing Electrical Energy |
US20100193906A1 (en) * | 2009-02-05 | 2010-08-05 | Northern Lights Semiconductor Corp. | Integrated Circuit Package for Magnetic Capacitor |
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JP2011003892A (ja) * | 2009-06-18 | 2011-01-06 | Northern Lights Semiconductor Corp | Dramセル |
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- 2007-07-17 DE DE102007033252A patent/DE102007033252A1/de not_active Withdrawn
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Also Published As
Publication number | Publication date |
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US20080174936A1 (en) | 2008-07-24 |
GB2445811A (en) | 2008-07-23 |
GB2445811B (en) | 2009-01-07 |
FR2913282A1 (fr) | 2008-09-05 |
GB0713771D0 (en) | 2007-08-22 |
JP2008177536A (ja) | 2008-07-31 |
JP4694552B2 (ja) | 2011-06-08 |
DE102007033252A1 (de) | 2008-07-31 |
TW200832464A (en) | 2008-08-01 |
TWI395241B (zh) | 2013-05-01 |
CN101227103A (zh) | 2008-07-23 |
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