JP4659783B2 - 裏面照射型撮像素子の製造方法 - Google Patents

裏面照射型撮像素子の製造方法 Download PDF

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Publication number
JP4659783B2
JP4659783B2 JP2007157460A JP2007157460A JP4659783B2 JP 4659783 B2 JP4659783 B2 JP 4659783B2 JP 2007157460 A JP2007157460 A JP 2007157460A JP 2007157460 A JP2007157460 A JP 2007157460A JP 4659783 B2 JP4659783 B2 JP 4659783B2
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semiconductor substrate
manufacturing
forming step
image sensor
backside
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JP2007157460A
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Japanese (ja)
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JP2008311413A (ja
JP2008311413A5 (enExample
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眞司 宇家
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2007157460A priority Critical patent/JP4659783B2/ja
Priority to US12/138,294 priority patent/US20080308890A1/en
Publication of JP2008311413A publication Critical patent/JP2008311413A/ja
Publication of JP2008311413A5 publication Critical patent/JP2008311413A5/ja
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Priority to US13/100,475 priority patent/US8216873B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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JP2007157460A 2007-06-14 2007-06-14 裏面照射型撮像素子の製造方法 Expired - Fee Related JP4659783B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007157460A JP4659783B2 (ja) 2007-06-14 2007-06-14 裏面照射型撮像素子の製造方法
US12/138,294 US20080308890A1 (en) 2007-06-14 2008-06-12 Back-illuminated type imaging device and fabrication method thereof
US13/100,475 US8216873B2 (en) 2007-06-14 2011-05-04 Back-illuminated type imaging device and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007157460A JP4659783B2 (ja) 2007-06-14 2007-06-14 裏面照射型撮像素子の製造方法

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JP2008311413A5 JP2008311413A5 (enExample) 2010-08-26
JP4659783B2 true JP4659783B2 (ja) 2011-03-30

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US (2) US20080308890A1 (enExample)
JP (1) JP4659783B2 (enExample)

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US8233066B2 (en) * 2010-02-18 2012-07-31 Omnivision Technologies, Inc. Image sensor with improved black level calibration
JP5663925B2 (ja) * 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
KR101688084B1 (ko) * 2010-06-30 2016-12-20 삼성전자주식회사 이미지 센서 및 이를 포함하는 패키지
US8338856B2 (en) 2010-08-10 2012-12-25 Omnivision Technologies, Inc. Backside illuminated image sensor with stressed film
JP5640630B2 (ja) * 2010-10-12 2014-12-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
US9165970B2 (en) * 2011-02-16 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Back side illuminated image sensor having isolated bonding pads
JP5333493B2 (ja) * 2011-03-22 2013-11-06 株式会社ニコン 裏面照射型撮像素子および撮像装置
JP5826511B2 (ja) 2011-04-26 2015-12-02 株式会社東芝 固体撮像装置及びその製造方法
KR20120135627A (ko) * 2011-06-07 2012-12-17 삼성전자주식회사 이미지 센서 및 그 제조 방법
US8846494B2 (en) * 2011-07-07 2014-09-30 Aptina Imaging Corporation Alignment marks and alignment methods for aligning backside components to frontside components in integrated circuits
JP2012019228A (ja) * 2011-09-05 2012-01-26 Toshiba Corp 半導体装置
US9219092B2 (en) 2012-02-14 2015-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Grids in backside illumination image sensor chips and methods for forming the same
KR20130106619A (ko) * 2012-03-20 2013-09-30 삼성전자주식회사 이미지 센서 및 그 제조 방법
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US9455288B2 (en) * 2012-05-21 2016-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor structure to reduce cross-talk and improve quantum efficiency
JP2014135326A (ja) * 2013-01-08 2014-07-24 Toshiba Corp 固体撮像装置
US9591242B2 (en) * 2013-01-31 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Black level control for image sensors
JP6076123B2 (ja) 2013-02-14 2017-02-08 オリンパス株式会社 半導体基板、撮像素子、および撮像装置
TWI570873B (zh) * 2013-02-20 2017-02-11 聯華電子股份有限公司 半導體結構及其製造方法
CN103594479B (zh) * 2013-11-27 2016-06-01 豪威科技(上海)有限公司 背照式cmos影像传感器及其制造方法
US9614000B2 (en) * 2014-05-15 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Biased backside illuminated sensor shield structure
FR3030113A1 (fr) * 2014-12-15 2016-06-17 St Microelectronics Crolles 2 Sas Capteur d'image eclaire et connecte par sa face arriere
JP6879919B2 (ja) * 2015-09-17 2021-06-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子機器、及び、固体撮像素子の製造方法
US9917121B2 (en) * 2016-03-24 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. BSI image sensor and method of forming same
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Publication number Publication date
JP2008311413A (ja) 2008-12-25
US20080308890A1 (en) 2008-12-18
US8216873B2 (en) 2012-07-10
US20110207250A1 (en) 2011-08-25

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