US20080308890A1 - Back-illuminated type imaging device and fabrication method thereof - Google Patents

Back-illuminated type imaging device and fabrication method thereof Download PDF

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Publication number
US20080308890A1
US20080308890A1 US12/138,294 US13829408A US2008308890A1 US 20080308890 A1 US20080308890 A1 US 20080308890A1 US 13829408 A US13829408 A US 13829408A US 2008308890 A1 US2008308890 A1 US 2008308890A1
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semiconductor substrate
imaging device
type imaging
illuminated type
portions
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Abandoned
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US12/138,294
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English (en)
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Shinji Uya
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Fujifilm Corp
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Fujifilm Corp
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Assigned to FUJIFILM CORPORATION reassignment FUJIFILM CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: UYA, SHINJI
Publication of US20080308890A1 publication Critical patent/US20080308890A1/en
Priority to US13/100,475 priority Critical patent/US8216873B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Definitions

  • FIG. 6 is a schematic sectional view showing the back-illuminated type imaging device 100 during the fabrication process steps.
  • the back-illuminated type imaging device 100 includes the silicon substrate 4 , an insulating film 5 that is made, for example, Of SiO 2 and is formed on the front surface of the silicon substrate 4 , an insulating film 14 formed on the insulating film 5 , and a supporting substrate 16 formed on the insulating film 14 via an adhesive film 15 .

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  • Solid State Image Pick-Up Elements (AREA)
US12/138,294 2007-06-14 2008-06-12 Back-illuminated type imaging device and fabrication method thereof Abandoned US20080308890A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/100,475 US8216873B2 (en) 2007-06-14 2011-05-04 Back-illuminated type imaging device and fabrication method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007157460A JP4659783B2 (ja) 2007-06-14 2007-06-14 裏面照射型撮像素子の製造方法
JPP2007-157460 2007-06-14

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US20080308890A1 true US20080308890A1 (en) 2008-12-18

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US12/138,294 Abandoned US20080308890A1 (en) 2007-06-14 2008-06-12 Back-illuminated type imaging device and fabrication method thereof
US13/100,475 Expired - Fee Related US8216873B2 (en) 2007-06-14 2011-05-04 Back-illuminated type imaging device and fabrication method thereof

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JP (1) JP4659783B2 (enExample)

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US20100213560A1 (en) * 2009-02-24 2010-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for backside illuminated image sensor
US20100214453A1 (en) * 2009-02-17 2010-08-26 Nikon Corporation Backside illumination image sensor, manufacturing method thereof and image-capturing device
US20100220226A1 (en) * 2009-02-24 2010-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Front side implanted guard ring structure for backside illuminated image sensor
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US20100244173A1 (en) * 2009-03-30 2010-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor and method of fabricating same
US20110090383A1 (en) * 2009-10-19 2011-04-21 Tetsuya Yamaguchi Solid-state image sensing device and method of manufacturing the same
CN102082156A (zh) * 2009-11-30 2011-06-01 索尼公司 固体摄像器件、固体摄像器件制造方法以及电子装置
US20110241148A1 (en) * 2010-03-31 2011-10-06 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic equipment
US20120001286A1 (en) * 2010-06-30 2012-01-05 Junho Yoon Image sensor and package including the image sensor
US20120313208A1 (en) * 2011-06-07 2012-12-13 Sang-Hoon Kim Image sensor and method of forming the same
CN103325800A (zh) * 2012-03-20 2013-09-25 三星电子株式会社 图像传感器及其制造方法
TWI425605B (zh) * 2009-03-18 2014-02-01 東芝股份有限公司 A semiconductor device and a back-illuminated solid-state imaging device
US20140038337A1 (en) * 2008-06-11 2014-02-06 Intellectual Ventures Ii Llc Backside illuminated image sensor and manufacturing method thereof
CN103594479A (zh) * 2013-11-27 2014-02-19 豪威科技(上海)有限公司 背照式cmos影像传感器及其制造方法
CN103915456A (zh) * 2013-01-08 2014-07-09 株式会社东芝 固体拍摄装置
US20140211057A1 (en) * 2013-01-31 2014-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Black Level Control for Image Sensors
US9006807B2 (en) 2012-03-23 2015-04-14 Kabushiki Kaisha Toshiba Solid-state image sensing device and camera
US20150333093A1 (en) * 2014-05-15 2015-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Biased backside illuminated sensor shield structure
CN105702690A (zh) * 2014-12-15 2016-06-22 意法半导体有限公司 背侧照射和连接的图像传感器
US9716069B2 (en) 2013-02-14 2017-07-25 Olympus Corporation Semiconductor substrate, image pickup element, and image pickup apparatus
US10475831B2 (en) * 2015-09-17 2019-11-12 Sony Semiconductor Solutions Corporation Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device
US11476295B2 (en) * 2011-02-16 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Back side illuminated image sensor with reduced sidewall-induced leakage
US20230369380A1 (en) * 2022-05-10 2023-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Image Sensor with Extension Pad
CN117423714A (zh) * 2023-12-18 2024-01-19 合肥晶合集成电路股份有限公司 半导体结构的制备方法及半导体结构

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JP4743294B2 (ja) * 2009-02-17 2011-08-10 株式会社ニコン 裏面照射型撮像素子および撮像装置
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JP5333493B2 (ja) * 2011-03-22 2013-11-06 株式会社ニコン 裏面照射型撮像素子および撮像装置
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US9219092B2 (en) 2012-02-14 2015-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Grids in backside illumination image sensor chips and methods for forming the same
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TWI570873B (zh) * 2013-02-20 2017-02-11 聯華電子股份有限公司 半導體結構及其製造方法
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US20140038337A1 (en) * 2008-06-11 2014-02-06 Intellectual Ventures Ii Llc Backside illuminated image sensor and manufacturing method thereof
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US10290671B2 (en) 2009-02-24 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method of forming same
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US20110207250A1 (en) 2011-08-25
JP2008311413A (ja) 2008-12-25
US8216873B2 (en) 2012-07-10
JP4659783B2 (ja) 2011-03-30

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