JP4743294B2 - 裏面照射型撮像素子および撮像装置 - Google Patents
裏面照射型撮像素子および撮像装置 Download PDFInfo
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- JP4743294B2 JP4743294B2 JP2009034106A JP2009034106A JP4743294B2 JP 4743294 B2 JP4743294 B2 JP 4743294B2 JP 2009034106 A JP2009034106 A JP 2009034106A JP 2009034106 A JP2009034106 A JP 2009034106A JP 4743294 B2 JP4743294 B2 JP 4743294B2
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- 238000003384 imaging method Methods 0.000 title claims description 55
- 238000001514 detection method Methods 0.000 claims description 62
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Description
(1)撮像画素210および焦点検出画素211は、一方の面に光電変換部15aを形成するとともに他方の面を受光面とする半導体層16と、光電変換部15aからの信号を読み出す配線を有する配線層17とを備え、撮像画素210の配線層17および焦点検出画素211の配線層17は、それぞれの半導体層16の一方の面側に形成され、撮像画素210は、半導体層16の他方の面側に、特定の波長域の光を通す色フィルタ12を備え、焦点検出画素211は、撮像用画素210の色フィルタ12に対応する層に、半導体層16の他方の面に入射する光の一部を遮蔽する遮光膜18を備えるようにした。これにより、マクロレンズ10と光電変換部15aとの間に光電変換部からの信号を読み出すための配線が形成されず、また、遮光膜18が色フィルタ12と重なって形成されることはないので、マイクロレンズ10から光電変換部15aまでの距離を短く(浅く)することができ、焦点の検出精度を向上させることができる。
(1)遮光膜18の厚みは色フィルタ12の厚みと異なるようにしてもよい。これにより、焦点検出画素211の焦点位置の調整が可能になる。
11 マイクロレンズ固定層
12 色フィルタ
13 平坦化層
15a,33 光電変換部
15b チャンネルストップ部
16 半導体層
17 配線層
18 遮光膜
31 リセットトランジスタ
32 転送ゲートトランジスタ
34 電荷電圧変換部
35 ソースホロアトランジスタ
36 行選択トランジスタ
60 半導体基板
61 P型エピタキシャル層
62 支持基板
101 電子カメラ
102 交換レンズ
111 撮像素子
210 撮像用画素
211,211a,211b 焦点検出用画素
300 基本画素
Claims (5)
- 複数の画素を二次元的に並べて配置した裏面照射型撮像素子において、
前記複数の画素には、撮像用の画素とともに焦点検出用の画素が含まれ、
前記撮像用の画素および前記焦点検出用の画素は、一方の面に光電変換部を形成するとともに他方の面を受光面とする半導体層と、前記光電変換部からの信号を読み出す配線を有する配線層と、平坦化層とを備え、
前記撮像用の画素の配線層および前記焦点検出用の画素の配線層は、それぞれの前記半導体層の前記一方の面側に形成され、
前記撮像用の画素の平坦化層および前記焦点検出用の画素の平坦化層は、それぞれの前記半導体層の前記他方の面側に形成され、
前記撮像用の画素は、自身の前記平坦化層に積層された、特定の波長域の光を通す色フィルタを備え、
前記焦点検出用の画素は、自身の前記平坦化層に積層された、前記半導体層の他方の面に入射する光の一部を遮蔽する遮光膜を備えることを特徴とする裏面照射型撮像素子。 - 請求項1に記載の裏面照射型撮像素子において、
前記遮光膜の厚みは前記色フィルタの厚みと異なることを特徴とする裏面照射型撮像素子。 - 請求項1または2に記載の裏面照射型撮像素子において、
前記焦点検出用の画素は、前記半導体層の前記一方の面側に、前記光電変換部からの信号を読み出す配線と、隣接する焦点検出用の画素における光電変換部からの信号を読み出す配線と、を備えることを特徴とする裏面照射型撮像素子。 - 請求項1乃至3のいずれか1項に記載の裏面照射型撮像素子において、
前記配線は、前記裏面照射型撮像素子の受光面側から前記光電変換部の受光領域を投影したときの投影と重なることを特徴とする裏面照射型撮像素子。 - 請求項1乃至4のいずれか1項に記載の裏面照射型撮像素子を備えることを特徴とする撮像装置。
Priority Applications (20)
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JP2009034106A JP4743294B2 (ja) | 2009-02-17 | 2009-02-17 | 裏面照射型撮像素子および撮像装置 |
KR1020100011458A KR101786069B1 (ko) | 2009-02-17 | 2010-02-08 | 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치 |
US12/702,456 US8638381B2 (en) | 2009-02-17 | 2010-02-09 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
US14/135,144 US9036074B2 (en) | 2009-02-17 | 2013-12-19 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
US14/690,886 US9258500B2 (en) | 2009-02-17 | 2015-04-20 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
US14/989,205 US9609248B2 (en) | 2009-02-17 | 2016-01-06 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
US15/439,103 US9894305B2 (en) | 2009-02-17 | 2017-02-22 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
KR1020170024072A KR101832094B1 (ko) | 2009-02-17 | 2017-02-23 | 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치 |
US15/861,917 US10382713B2 (en) | 2009-02-17 | 2018-01-04 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
KR1020180017723A KR102004647B1 (ko) | 2009-02-17 | 2018-02-13 | 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치 |
US16/249,409 US10924699B2 (en) | 2009-02-17 | 2019-01-16 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
KR1020190087394A KR102139007B1 (ko) | 2009-02-17 | 2019-07-19 | 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치 |
KR1020200090073A KR102206218B1 (ko) | 2009-02-17 | 2020-07-21 | 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치 |
US17/150,284 US11272131B2 (en) | 2009-02-17 | 2021-01-15 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
KR1020210005679A KR102390672B1 (ko) | 2009-02-17 | 2021-01-15 | 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치 |
US17/585,808 US11632511B2 (en) | 2009-02-17 | 2022-01-27 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
KR1020220049246A KR102562402B1 (ko) | 2009-02-17 | 2022-04-21 | 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치 |
US18/121,692 US11910118B2 (en) | 2009-02-17 | 2023-03-15 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
KR1020230098291A KR20230119616A (ko) | 2009-02-17 | 2023-07-27 | 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치 |
US18/411,223 US20240163584A1 (en) | 2009-02-17 | 2024-01-12 | Backside illumination image sensor, manufacturing method thereof and image-capturing device |
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JP6053505B2 (ja) * | 2012-01-18 | 2016-12-27 | キヤノン株式会社 | 固体撮像装置 |
JP6320272B2 (ja) | 2013-11-29 | 2018-05-09 | キヤノン株式会社 | 撮像素子、撮像装置及び携帯電話機 |
JP6574655B2 (ja) * | 2015-09-16 | 2019-09-11 | キヤノン株式会社 | 撮像装置および撮像装置における符号化方法 |
JP6393293B2 (ja) * | 2016-06-15 | 2018-09-19 | キヤノン株式会社 | 撮像素子及び撮像装置 |
Citations (4)
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JPS62258404A (ja) * | 1986-05-02 | 1987-11-10 | Seiko Epson Corp | カラ−フイルタ−の製造方法 |
JP2008103668A (ja) * | 2006-09-20 | 2008-05-01 | Fujifilm Corp | 裏面照射型撮像素子及びこれを備えた撮像装置 |
JP2008311413A (ja) * | 2007-06-14 | 2008-12-25 | Fujifilm Corp | 裏面照射型撮像素子及びその製造方法 |
JP2009017152A (ja) * | 2007-07-04 | 2009-01-22 | Nikon Corp | 固体撮像素子及びこれを用いた撮像装置 |
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JPS62258404A (ja) * | 1986-05-02 | 1987-11-10 | Seiko Epson Corp | カラ−フイルタ−の製造方法 |
JP2008103668A (ja) * | 2006-09-20 | 2008-05-01 | Fujifilm Corp | 裏面照射型撮像素子及びこれを備えた撮像装置 |
JP2008311413A (ja) * | 2007-06-14 | 2008-12-25 | Fujifilm Corp | 裏面照射型撮像素子及びその製造方法 |
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