JP4647682B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP4647682B2 JP4647682B2 JP2008289773A JP2008289773A JP4647682B2 JP 4647682 B2 JP4647682 B2 JP 4647682B2 JP 2008289773 A JP2008289773 A JP 2008289773A JP 2008289773 A JP2008289773 A JP 2008289773A JP 4647682 B2 JP4647682 B2 JP 4647682B2
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- 239000004065 semiconductor Substances 0.000 title claims description 112
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 238
- 239000013078 crystal Substances 0.000 claims description 57
- 238000005204 segregation Methods 0.000 claims description 42
- 239000012535 impurity Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 300
- 239000010410 layer Substances 0.000 description 148
- 239000007789 gas Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 34
- 230000015572 biosynthetic process Effects 0.000 description 28
- 239000010936 titanium Substances 0.000 description 24
- 238000000151 deposition Methods 0.000 description 22
- 230000008021 deposition Effects 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 229920005591 polysilicon Polymers 0.000 description 20
- 238000000231 atomic layer deposition Methods 0.000 description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Description
以下、本発明の第1の実施形態に係る半導体製造装置及び、それを用いた半導体装置の製造方法について、図面を参照しながら説明する。
図10は、本発明の第2の実施形態に係る半導体装置の概略構成を示す断面図である。同図では、図1と同一部分には同一符号を付与し、詳細説明は省略する。
図13は、本発明の第3の実施形態に係る半導体装置の概略構成を示す断面図である。同図では、図10と同一部分には同一符号を付与し、詳細説明は省略する。
102 n型ウェル領域
103 p型ウェル領域
104 素子分離層
105 PMOS
106 NMOS
107 p型不純物拡散層
108 p型エクステンション層
109 第2のゲート絶縁膜
109a 高誘電体膜
110 第2のゲート電極
110a、116a TiN膜
111 第2の上部ゲート電極
112 第2のサイドウォール
113 n型不純物拡散層
114 n型エクステンション層
115 第1のゲート絶縁膜
116 第1のゲート電極
117 第1の上部ゲート電極
118 第1のサイドウォール
201、202 ガス供給口
203 シャワープレート
204 ステージヒータ
205 ウェハ
206 間隔
208、207 マスフローコントローラー
209 液体ガスバブラーキャビネット
301 下層ゲート電極
301a 第1のTiN膜
302 上層ゲート電極
302a 第2のTiN膜
303 第1のTiN電極
401 第2の元素偏析層
401a 第2の偏析層
402 第1の元素偏析層
402a 第1の偏析層
Claims (10)
- 上部にp型層とn型層が設けられた半導体基板と、
前記p型層上に設けられた第1のゲート絶縁膜と、前記第1のゲート絶縁膜上に設けられ、TiNからなる第1のゲート電極と、前記第1のゲート電極上に設けられ、不純物を含む半導体からなる第1の上部ゲート電極とを有するNチャネル型MOSトランジスタと、
前記n型層上に設けられた第2のゲート絶縁膜と、前記第2のゲート絶縁膜上に設けられ、柱状結晶のTiN結晶からなり、(111)配向/(200)配向が1.5以上となるTiN層からなる第2のゲート電極と、前記第2のゲート電極上に設けられ、不純物を含む半導体からなる第2の上部ゲート電極とを有するPチャネル型MOSトランジスタとを備え、
前記第2のゲート電極の膜厚は5nm以上25nm以下であって、前記第2のゲート絶縁膜の電気的膜厚(EOT)が1.4nm以下である半導体装置。 - 前記第2のゲート電極の全体が(111)配向/(200)配向が1.5以上となるTiN結晶で構成されており、
前記第1のゲート電極は、(111)配向/(200)配向が1.5以上で、前記第2のゲート電極よりも膜厚が薄いTiN結晶で構成されていることを特徴とする請求項1に記載の半導体装置。 - 前記第1のゲート電極は(111)配向/(200)配向が0.8以上1.2以下のTiN結晶で構成されており、前記第1のゲート電極の膜厚は4nm以上10nm以下であることを特徴とする請求項1に記載の半導体装置。
- 前記第2のゲート電極は、(111)配向/(200)配向が0.8以上1.2以下のTiN結晶からなる第1のTiN層と、(111)配向/(200)配向が1.5以上のTiN結晶からなる第2のTiN層とで構成されていることを特徴とする請求項1または3に記載の半導体装置。
- 前記第1のゲート絶縁膜の内部または前記第1のゲート絶縁膜と前記第1のゲート電極との界面にLaまたはMgが偏析され、
前記第2のゲート絶縁膜の内部または前記第2のゲート絶縁膜と前記第2のゲート電極との界面にAlまたはTaが偏析されていることを特徴とする請求項1〜4のうちいずれか1つに記載の半導体装置。 - 前記第1のゲート絶縁膜及び前記第2のゲート絶縁膜は、高誘電体で構成されていることを特徴とする請求項1〜5のうちいずれか1つに記載の半導体装置。
- 半導体基板の上部にp型層及びn型層を形成する工程(a)と、
前記p型層上に、下から順に第1のゲート絶縁膜、柱状結晶のTiNからなる第1のゲート電極、及び不純物を含む半導体からなる第1の上部ゲート電極を有するNチャネル型MOSトランジスタを形成するとともに、前記n型層上に、下から順に第2のゲート絶縁膜、柱状結晶のTiN結晶からなり、(111)配向/(200)配向が1.5以上となるTiN層からなる第2のゲート電極、及び不純物を含む半導体からなる第2の上部ゲート電極を有するPチャネル型MOSトランジスタを形成する工程(b)とを備え、
前記第2のゲート電極の膜厚は5nm以上25nm以下であって、前記第2のゲート絶縁膜の電気的膜厚(EOT)が1.4nm以下である半導体装置の製造方法。 - 前記工程(b)は、
前記半導体基板上に絶縁膜を形成する工程(b1)と、
ガス供給口と前記半導体基板との間隔を25mm以上にし、66.7Pa以下でTiの原料ガスとNの原料ガスとを交互に供給することで前記絶縁膜上に(111)配向/(200)配向が1.5以上となるTiN層を形成する工程(b2)と、
前記TiN層のうち前記p型層の上方に位置する部分の一部を選択的に除去し、前記p型層の上方における前記TiN層の膜厚を、前記n型層の上方における前記TiN層の膜厚より薄くする工程(b3)と、
前記TiN層の上に半導体膜を形成する工程(b4)と、
前記半導体層、前記TiN層、前記絶縁膜をパターニングして前記p型層上に前記絶縁膜の一部からなる前記第1のゲート絶縁膜、前記TiN層の一部からなる前記第1のゲート電極、及び前記半導体膜の一部からなる前記第1の上部ゲート電極を形成するとともに、前記n型層上に前記絶縁膜の一部からなる前記第2のゲート絶縁膜、前記TiN層からなる前記第2のゲート電極、及び前記半導体膜の一部からなる前記第2の上部ゲート電極を形成する工程(b5)とを含んでいることを特徴とする請求項7に記載の半導体装置の製造方法。 - 前記第2のゲート電極は下層ゲート電極と、前記下層ゲート電極上に設けられた上層ゲート電極とを有しており、
前記工程(b)は、
前記半導体基板上に絶縁膜を形成する工程(b6)と、
ガス供給口と前記半導体基板との間隔を20mm以下にし、400Pa以上でTiの原料ガスとNの原料ガスとを交互に供給することで前記絶縁膜上に(111)配向/(200)配向が0.8以上1.2以下となる第1のTiN層を形成する工程(b7)と、
前記ガス供給口と前記半導体基板との間隔を25mm以上にし、66.7Pa以下でTiの原料ガスとNの原料ガスとを交互に供給することで前記第1のTiN層上に(111)配向/(200)配向が1.5以上となる第2のTiN層を形成する工程(b8)と、
前記第2のTiN層のうち前記p型層の上方に形成された部分を選択的に除去する工程(b9)と、
前記第1のTiN層及び前記第2のTiN層の上に半導体膜を形成する工程(b10)と、
前記半導体層、前記第2のTiN層、前記第1のTiN層、前記絶縁膜をパターニングして前記p型層上に前記絶縁膜の一部からなる前記第1のゲート絶縁膜、前記第1のTiN層の一部からなる前記第1のゲート電極、及び前記半導体膜の一部からなる前記第1の上部ゲート電極を形成するとともに、前記n型層上に前記絶縁膜の一部からなる前記第2のゲート絶縁膜、前記第1のTiN層の一部からなる前記下層ゲート電極、前記第2のTiN層の一部からなる前記上層ゲート電極、及び前記半導体膜の一部からなる前記第2の上部ゲート電極を形成する工程(b11)とを含んでいることを特徴とする請求項7に記載の半導体装置の製造方法。 - 前記第2のゲート電極は下層ゲート電極と、前記下層ゲート電極上に設けられた上層ゲート電極とを有しており、
前記工程(b)は、
前記半導体基板上に絶縁膜を形成する工程(b12)と、
前記絶縁膜上にAl酸化物、Ta酸化物、Al窒化物、及びTa窒化物のうちいずれかからなる第1の偏析層を形成する工程(b13)と、
ガス供給口と前記半導体基板との間隔を20mm以下にし、400Pa以上でTiの原料ガスとNの原料ガスとを交互に供給することで前記第1の偏析層の上に(111)配向/(200)配向が0.8以上1.2以下となる第1のTiN層を形成する工程(b14)と、
前記第1のTiN層のうち前記p型層の上方に形成された部分を除去する工程(b15)と、
前記工程(b15)の後、前記絶縁膜及び前記第1のTiN層の上にLa酸化物、Mg酸化物、La窒化物、及びMg窒化物のうちいずれかからなる第2の偏析層を前記p型層の上方に選択的に形成する工程(b16)と、
熱処理によって前記絶縁膜の内部、または前記絶縁膜の上面のうち前記p型層の上方に形成された部分にLaまたはMgを偏析させ、前記絶縁膜の内部、または前記絶縁膜の上面のうち前記n型層の上方に形成された部分にAlまたはTaを偏析させる工程(b17)と、
前記ガス供給口と前記半導体基板との間隔を25mm以上にし、66.7Pa以下でTiの原料ガスとNの原料ガスとを交互に供給することで前記第2の偏析層及び前記第1のTiN層上に(111)配向/(200)配向が1.5以上となる第2のTiN層を形成する工程(b18)と、
前記第2のTiN層の上に半導体膜を形成する工程(b19)と、
前記半導体層、前記第2のTiN層、前記第1のTiN層、前記第2の偏析層、前記第1の偏析層、及び前記絶縁膜をパターニングして前記p型層上に前記絶縁膜の一部からなる前記第1のゲート絶縁膜、前記第2の偏析層の一部からなる第2の元素偏析層、前記第2のTiN層の一部からなる前記第1のゲート電極、及び前記半導体膜の一部からなる前記第1の上部ゲート電極を形成するとともに、前記n型層上に前記絶縁膜の一部からなる前記第2のゲート絶縁膜、前記第1の偏析層の一部からなる第1の元素偏析層、前記第1のTiN層の一部からなる前記下層ゲート電極、前記第2のTiN層の一部からなる前記上層ゲート電極、及び前記半導体膜の一部からなる前記第2の上部ゲート電極を形成する工程(b20)とを含んでいることを特徴とする請求項7に記載の半導体装置の製造方法。
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