JP3987046B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP3987046B2 JP3987046B2 JP2004047510A JP2004047510A JP3987046B2 JP 3987046 B2 JP3987046 B2 JP 3987046B2 JP 2004047510 A JP2004047510 A JP 2004047510A JP 2004047510 A JP2004047510 A JP 2004047510A JP 3987046 B2 JP3987046 B2 JP 3987046B2
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- Prior art keywords
- film
- layer
- forming
- gate insulating
- silicon
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- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000012535 impurity Substances 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 3
- 239000010408 film Substances 0.000 description 164
- 239000010410 layer Substances 0.000 description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 239000007789 gas Substances 0.000 description 18
- 238000000231 atomic layer deposition Methods 0.000 description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
(a)半導体基板上にゲート絶縁膜を形成する工程、
(b)前記ゲート絶縁膜上に第1不純物層を形成する工程、
(c)前記第1不純物層上にシリコン膜を形成する工程、
(d)前記シリコン膜上に金属膜を形成する工程、
(e)前記金属膜、前記シリコン膜および前記第1不純物層をパターニングする工程、
(f)前記(e)工程後、前記金属膜と前記シリコン膜とを反応させてゲート電極となる金属化合物膜を形成する工程、
を含むものである。
2 素子分離溝
3 酸化シリコン膜
4 p型ウエル
6 ゲート絶縁膜
7 不純物層(第1不純物層)
8 多結晶シリコン膜
9 金属膜
10 ゲート電極
11 n−型半導体領域
13 サイドウォールスペーサ
14 n+型半導体領域
15 酸化シリコン膜
16 コンタクトホール
17 プラグ
18 配線
Claims (3)
- MISFETを有する半導体装置の製造方法であって、
(a)半導体基板上に酸化シリコン膜より比誘電率の大きい材料からなるゲート絶縁膜を形成する工程、
(b)前記ゲート絶縁膜上にAs層、P層、Sb層、またはB層からなる第1不純物層を形成する工程、
(c)前記第1不純物層上にシリコン膜を形成する工程、
(d)前記シリコン膜上に金属膜を形成する工程、
(e)前記金属膜、前記シリコン膜および前記第1不純物層をパターニングする工程、
(f)前記(e)工程後、600℃以下の加熱処理により、前記シリコン膜を前記金属膜と完全に反応させて、ゲート電極となるフルシリサイド化膜を形成する工程、
を含むことを特徴とする半導体装置の製造方法。 - MISFETを有する半導体装置の製造方法であって、
(a)半導体基板上に酸化シリコン膜より比誘電率の大きい材料からなるゲート絶縁膜を形成する工程、
(b)前記ゲート絶縁膜上にAs層、P層、Sb層、またはB層からなる第1不純物層を形成する工程、
(c)前記第1不純物層上にシリコン膜を形成する工程、
(d)前記シリコン膜上に金属膜を形成する工程、
(e)前記金属膜、前記シリコン膜および前記第1不純物層をパターニングする工程、
(f)前記(e)工程後、600℃以下の加熱処理により、前記シリコン膜を前記金属膜と完全に反応させて、ゲート電極となるフルシリサイド化膜を形成する工程、
を含み、
前記金属膜はTi、W、Ta、Ni、Pt、Ruのうちいずれかひとつを主成分とすることを特徴とする半導体装置の製造方法。 - MISFETを有する半導体装置の製造方法であって、
(a)半導体基板上に酸化シリコン膜より比誘電率の大きい材料からなるゲート絶縁膜を形成する工程、
(b)前記ゲート絶縁膜上にAs層、P層、Sb層、またはB層からなる第1不純物層を形成する工程、
(c)前記第1不純物層上にシリコン膜を形成する工程、
(d)前記シリコン膜上に金属膜を形成する工程、
(e)前記金属膜、前記シリコン膜および前記第1不純物層をパターニングする工程、
(f)前記(e)工程後、600℃以下の加熱処理により、前記シリコン膜を前記金属膜と完全に反応させて、ゲート電極となるフルシリサイド化膜を形成する工程、
を含み、
前記第1不純物層はALD法によって形成することを特徴とする半導体装置の製造方法。
Priority Applications (1)
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JP2004047510A JP3987046B2 (ja) | 2004-02-24 | 2004-02-24 | 半導体装置の製造方法 |
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JP2004047510A JP3987046B2 (ja) | 2004-02-24 | 2004-02-24 | 半導体装置の製造方法 |
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JP2005243678A JP2005243678A (ja) | 2005-09-08 |
JP3987046B2 true JP3987046B2 (ja) | 2007-10-03 |
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JP2004047510A Expired - Lifetime JP3987046B2 (ja) | 2004-02-24 | 2004-02-24 | 半導体装置の製造方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007281453A (ja) * | 2006-03-17 | 2007-10-25 | Sumitomo Chemical Co Ltd | 半導体電界効果トランジスタ及びその製造方法 |
KR100823707B1 (ko) | 2006-07-21 | 2008-04-21 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
JP5042006B2 (ja) * | 2007-12-25 | 2012-10-03 | 日本電信電話株式会社 | ダイヤモンド電界効果トランジスタ |
JP6528366B2 (ja) * | 2014-07-08 | 2019-06-12 | 豊田合成株式会社 | 縦型トレンチmosfetの製造方法 |
-
2004
- 2004-02-24 JP JP2004047510A patent/JP3987046B2/ja not_active Expired - Lifetime
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