CN101523593B - 半导体装置制造方法以及半导体装置 - Google Patents
半导体装置制造方法以及半导体装置 Download PDFInfo
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- CN101523593B CN101523593B CN2007800363643A CN200780036364A CN101523593B CN 101523593 B CN101523593 B CN 101523593B CN 2007800363643 A CN2007800363643 A CN 2007800363643A CN 200780036364 A CN200780036364 A CN 200780036364A CN 101523593 B CN101523593 B CN 101523593B
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- silicide
- grid
- silicide layer
- silication
- metal
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 108
- 239000004065 semiconductor Substances 0.000 title claims description 124
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 477
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 477
- 229910052751 metal Inorganic materials 0.000 claims abstract description 198
- 239000002184 metal Substances 0.000 claims abstract description 192
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 124
- 229920005591 polysilicon Polymers 0.000 claims abstract description 90
- 239000010410 layer Substances 0.000 claims description 403
- 239000007789 gas Substances 0.000 claims description 220
- 230000015572 biosynthetic process Effects 0.000 claims description 121
- 238000000034 method Methods 0.000 claims description 89
- 229910005883 NiSi Inorganic materials 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 68
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 238000013459 approach Methods 0.000 claims description 43
- 229910052759 nickel Inorganic materials 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 40
- 239000012535 impurity Substances 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 31
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- 238000005979 thermal decomposition reaction Methods 0.000 claims description 26
- 229910005881 NiSi 2 Inorganic materials 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 claims description 17
- 238000000354 decomposition reaction Methods 0.000 claims description 16
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- 229910052697 platinum Inorganic materials 0.000 claims description 6
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- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
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- 229910052757 nitrogen Inorganic materials 0.000 description 6
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- 208000032750 Device leakage Diseases 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910008484 TiSi Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
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- 150000002739 metals Chemical class 0.000 description 4
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- 238000005546 reactive sputtering Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910021341 titanium silicide Inorganic materials 0.000 description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- 230000005540 biological transmission Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- -1 chloride free radical Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910005329 FeSi 2 Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
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- 238000002003 electron diffraction Methods 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000003284 homeostatic effect Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2006268017 | 2006-09-29 | ||
JP268017/2006 | 2006-09-29 | ||
PCT/JP2007/068890 WO2008047564A1 (fr) | 2006-09-29 | 2007-09-27 | Procédé de fabrication de dispositif semi-conducteur et dispositif semi-conducteur |
Publications (2)
Publication Number | Publication Date |
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CN101523593A CN101523593A (zh) | 2009-09-02 |
CN101523593B true CN101523593B (zh) | 2012-05-23 |
Family
ID=39313811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007800363643A Expired - Fee Related CN101523593B (zh) | 2006-09-29 | 2007-09-27 | 半导体装置制造方法以及半导体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100084713A1 (zh) |
JP (1) | JPWO2008047564A1 (zh) |
CN (1) | CN101523593B (zh) |
WO (1) | WO2008047564A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102187447B (zh) * | 2008-10-20 | 2013-03-27 | 创意科技股份有限公司 | 静电吸盘的检查方法以及静电吸盘装置 |
US8993393B2 (en) | 2010-02-11 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple silicide integration structure and method |
JP5660055B2 (ja) * | 2010-02-12 | 2015-01-28 | Jsr株式会社 | ルテニウム膜形成用材料及びルテニウム膜形成方法 |
JP5725454B2 (ja) * | 2011-03-25 | 2015-05-27 | 株式会社アルバック | NiSi膜の形成方法、シリサイド膜の形成方法、シリサイドアニール用金属膜の形成方法、真空処理装置、及び成膜装置 |
CN102760640B (zh) * | 2011-04-25 | 2015-06-17 | 中国科学院微电子研究所 | 防止积留水液的热氧化系统和方法 |
KR101658483B1 (ko) | 2012-08-21 | 2016-09-22 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
JP6101141B2 (ja) * | 2013-04-18 | 2017-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US9252014B2 (en) | 2013-09-04 | 2016-02-02 | Globalfoundries Inc. | Trench sidewall protection for selective epitaxial semiconductor material formation |
CN109804253B (zh) * | 2016-10-31 | 2022-03-08 | 京瓷株式会社 | 探针卡用基板、探针卡和检测装置 |
JP6921799B2 (ja) * | 2018-11-30 | 2021-08-18 | 東京エレクトロン株式会社 | 基板処理方法および基板処理システム |
CN115193277A (zh) * | 2022-06-17 | 2022-10-18 | 深圳市德明利光电有限公司 | 一种用于氧化制程的气体混合装置及处理设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5937315A (en) * | 1997-11-07 | 1999-08-10 | Advanced Micro Devices, Inc. | Self-aligned silicide gate technology for advanced submicron MOS devices |
US6406743B1 (en) * | 1997-07-10 | 2002-06-18 | Industrial Technology Research Institute | Nickel-silicide formation by electroless Ni deposition on polysilicon |
CN1627502A (zh) * | 2003-10-17 | 2005-06-15 | Imec公司 | 制造具有硅化电极的半导体器件的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS635567A (ja) * | 1986-06-25 | 1988-01-11 | Nec Corp | 半導体装置の製造方法 |
US5420067A (en) * | 1990-09-28 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricatring sub-half-micron trenches and holes |
JPH06318563A (ja) * | 1993-05-10 | 1994-11-15 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3629326B2 (ja) * | 1996-02-20 | 2005-03-16 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JPH1167688A (ja) * | 1997-08-22 | 1999-03-09 | Nec Corp | シリサイド材料とその薄膜およびシリサイド薄膜の製造方法 |
JP2001203352A (ja) * | 2000-01-21 | 2001-07-27 | Nec Corp | 半導体装置の製造方法 |
US7592674B2 (en) * | 2004-06-23 | 2009-09-22 | Nec Corporation | Semiconductor device with silicide-containing gate electrode and method of fabricating the same |
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JP2006045469A (ja) * | 2004-08-09 | 2006-02-16 | Tama Tlo Kk | アンモニア含有水溶液による含ハロゲン高分子の脱ハロゲン化方法 |
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2007
- 2007-09-27 CN CN2007800363643A patent/CN101523593B/zh not_active Expired - Fee Related
- 2007-09-27 US US12/311,428 patent/US20100084713A1/en not_active Abandoned
- 2007-09-27 JP JP2008539721A patent/JPWO2008047564A1/ja active Pending
- 2007-09-27 WO PCT/JP2007/068890 patent/WO2008047564A1/ja active Application Filing
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US6406743B1 (en) * | 1997-07-10 | 2002-06-18 | Industrial Technology Research Institute | Nickel-silicide formation by electroless Ni deposition on polysilicon |
US5937315A (en) * | 1997-11-07 | 1999-08-10 | Advanced Micro Devices, Inc. | Self-aligned silicide gate technology for advanced submicron MOS devices |
CN1627502A (zh) * | 2003-10-17 | 2005-06-15 | Imec公司 | 制造具有硅化电极的半导体器件的方法 |
Also Published As
Publication number | Publication date |
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JPWO2008047564A1 (ja) | 2010-02-25 |
CN101523593A (zh) | 2009-09-02 |
WO2008047564A1 (fr) | 2008-04-24 |
US20100084713A1 (en) | 2010-04-08 |
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