CN109804253B - 探针卡用基板、探针卡和检测装置 - Google Patents

探针卡用基板、探针卡和检测装置 Download PDF

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CN109804253B
CN109804253B CN201780062985.2A CN201780062985A CN109804253B CN 109804253 B CN109804253 B CN 109804253B CN 201780062985 A CN201780062985 A CN 201780062985A CN 109804253 B CN109804253 B CN 109804253B
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probe card
substrate
silicon nitride
card according
mass
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CN109804253A (zh
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今井寅浩
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Kyocera Corp
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Abstract

本公开的探针卡用基板具备多个为了配置与测定对象物抵接的探针的贯通孔。所述探针卡用基板包含氮化硅质陶瓷，具备与所述测定对象物相对的第一面、和位于该第一面的相反侧的第二面，包含多个金属硅化物的晶体相，构成所述金属硅化物的金属为选自钼、铬、铁、镍、锰、钒、铌、钽、钴和钨中的至少1种。

Description

探针卡用基板、探针卡和检测装置
技术领域
本公开涉及探针卡用基板、探针卡和检测装置。
背景技术
以往，在半导体晶片上形成的电路的检测中使用探针卡。专利文献1中公开了这样的探针卡的一例。探针卡通过与作为检测对象的半导体晶片的电路图案高精度地对位来使用。对位时使用利用了激光等光的光学对位方法。因此，探针卡要求不过度反射光(即为黑色)、反射不均少(即颜色不均少)等。
专利文献1中公开了一种探针卡，其为以氮化硅为主成分的烧结体，其中添加W、Mo等过渡金属而发生黑色化。
现有技术文献
专利文献
专利文献1：日本特开2010-150123号公报
发明内容
本公开的探针卡用基板具备多个为了配置与测定对象物抵接的探针的贯通孔，包含氮化硅质陶瓷，具备与上述测定对象物相对的第一面、和位于该第一面的相反侧的第二面，包含多个金属硅化物的晶体相，构成上述金属硅化物的金属为选自钼、铬、铁、镍、锰、钒、铌、钽、钴和钨中的至少1种。
本公开的探针卡具备上述探针卡用基板、和位于上述贯通孔的探针。
本公开的检测装置具备上述探针卡。
附图说明
图1为本公开的探针卡用基板的一个实施方式的俯视图。
图2为具备本公开的探针卡用基板的检测装置的一个实施方式的截面图。
图3的(a)是用电子显微镜拍摄探针卡用基板而得到的背散射电子(BEM)像，图3的(b)为基于EDS法的分析结果。
图4的(a)是探针卡用基板的表面的另一部位的电子显微镜照片，图4的(b)为基于EDS法的分析结果。
具体实施方式
以下参照附图详细地说明本公开的实施方式。图1和图2所示的探针卡用基板1为圆板状，具备配置于外周缘附近的安装孔2、和为了配置与测定对象物抵接的探针5的贯通孔3。
用于固定至检测装置的销等固定用部件(未图示)插通在安装孔2中。贯通孔3为用于插入探针5的孔，所述探针5与作为测定对象物的、例如排列于半导体芯片的电极、形成于半导体晶片的电路等的电气垫抵接。
本实施方式中示出了外形为圆板状的探针卡用基板l，但其形状能够根据排列于半导体芯片的电极的位置适当变更为方板状等。对于安装孔2和贯通孔3而言，其配置、数目、大小也能够根据固定部位、排列于半导体芯片的电极的位置进行适当变更。
探针卡用基板1包含氮化硅质陶瓷，如图2所示，具备与测定对象物相对的第一面1A、和位于第一面1A的相反侧的第二面1B。另外，探针卡用基板1包含多个金属硅化物的晶体相，构成金属硅化物的金属为选自钼、铬、铁、镍、锰、钒、铌、钽、钴和钨中的至少1种。在此，金属硅化物是指由MeSix(Me为金属原子。)表示的、金属与硅的化合物。
探针卡用基板1中，金属硅化物的晶体相呈黑色。探针卡用基板1包含多个黑色的金属硅化物的晶体相。探针卡用基板1整体呈黑色、并且以不过度反射光的程度包含多个黑色的金属硅化物的晶体相。金属硅化物由于共价键性高、与构成氮化硅陶瓷的其他成分的反应性低、化学稳定，因此，即使反复进行温度升高至某种程度的高温的使用方法，整体色调的经时变化也少。
探针卡用基板1中，在第一面4没有露出上述金属自身的粒状体时，能够在光学对位中抑制成为噪声的反射光的产生。在第一面4没有露出上述金属自身的粒状体是指，氮化硅质陶瓷中含有的上述金属仅以金属硅化物的晶体相的形式存在。
构成探针卡用基板1的各成分可以通过使用X射线衍射装置来鉴定。氮化硅质陶瓷是指，构成陶瓷的总成分100质量％中氮化硅的含量占50质量％以上的陶瓷。除氮化硅和由上述金属形成的硅化物以外，探针卡用基板也可以包含例如稀土金属、镁和铝的氧化物等。探针卡用基板1中，金属硅化物的含量的合计例如为0.3质量％以上且0.7质量％以下。
在第一面1A是否存在金属自身的粒状体的确认可以如下进行，即，使用例如电子射线微量分析仪(EPMA)进行第一面1A的面分析，确认上述金属的存在位置。接着，用EPMA测定在上述金属的存在位置是否存在有可能与上述金属形成化合物的硅(Si)、氧(O)、氮(N)、碳(C)等，来进行确认。若有可能与上述金属形成化合物的成分的存在位置与上述金属的存在位置不重合，则在第一面1A存在金属自身的粒状体。与此相对，若重合，则在第一面1A不存在金属自身的粒状体。
探针卡用基板1可以包含黄长石(Re2Si3O3N4)。
若晶界相内包含黄长石，则由容易变形的金属元素的氧化物构成的非晶相的存在比例在晶界相内相对减少，即使曝露于高温也可抑制晶界相的变形，探针卡用基板1的刚性提高。黄长石具有绿色系色调，但在黄长石的含量为5质量％以下时，能够抑制在光学对位中成为噪声的反射光的产生。
黄长石的含量使用X射线衍射装置利用Rietveld法求出即可。除黄长石以外的各成分的含量可以通过荧光X射线分析装置或ICP(Inductively Coupled Plasma，电感耦合等离子体)发光分光分析装置求出。在求出氮化硅(Si3N4)和稀土金属的氧化物(Re2O3)的各自含量的情况下，通过减去构成黄长石(Re2O3·Si3N4)的氮化硅(Si3N4)和稀土金属的氧化物(Re2O3：在此，Re为稀土金属原子。)的含量，可以求出除黄长石以外的各成分的含量。
对于探针卡用基板1而言，存在于第一面1A的空孔的最大长度为94μm以下时，金属成分、水分等导电性成分不易进入空孔，因此能够抑制绝缘耐力的降低。空孔是指与晶粒的空隙对应的部分。通过存在空孔，在探针卡用基板1本身达到高温而发生膨胀的情况下，晶粒之间相互挤压的力得以松弛从而内部应力降低，探针卡用基板1的耐热性提高。外观上，晶粒的空隙以白色点的形式(以白点的形式)被观察到，因此存在于第一面1A的空孔的最大长度为94μm以下时，能够抑制光学对位中的反射光的偏差。
空孔的最大长度可以通过如下方式测定，即，将在外观上观察到白点的部分(点区域)例如放大至100倍进行观察，使用所观察到的图像进行测定。更具体而言，使用所拍摄的图像，例如通过基于图像分析软件“A像くん”(注册商标，旭化成Engineering(株)制，后文中记作图像分析软件“A像くん”时，表示旭化成Engineering(株)制的图像分析软件。)的粒子分析方法进行分析，由此可以求出白点的最大长度。在此，作为粒子分析的设定条件，如下设定即可：将亮度设定为明，将2值化方法设为手动，将除去小图形的面积设为3μm2，将作为表示图像明暗的指标的阈值设为表示图像内各点(各像素)所具有的明暗度的直方图的峰值的1.2倍，具有降噪过滤器，将阴影大小(Shading Size)设为151。
本实施方式的探针卡用基板中，第一面1A的由粗糙度曲线求出的峰度(Rku)例如可以为2以上且16以下。峰度(Rku)为上述范围时，光在顶部不易发生反射，其结果是用于自动检测半导体晶片的规定位置的自动对准单元能够更准确地检测出半导体晶片的规定位置。
对于探针卡用基板1而言，由粗糙度曲线求出的斜度(Rsk)例如可以为-0.9以上且0.8以下。斜度(Rsk)为上述范围时，光在山的部分和谷的部分中的漫反射受到抑制，因此光变得不易发生反射。
探针卡用基板1中，第一面1A的粗糙度曲线中25％负载长度率与75％负载长度率之间的切断水平差(Rδc)可以为0.4μm以上且0.8μm以下。切断水平差(Rδc)为该范围时，在能够降低反射率的同时，也能够抑制颗粒的飞散。
第一面1A的由粗糙度曲线求出的峰度(Rku)、斜度(Rsk)和粗糙度曲线中25％负载长度率与75％负载长度率之间的切断水平差(Rδc)均基于JIS B 0601：2001使用激光显微镜(例如(株)Keyence公司制(VK-9510))求出即可。使用激光显微镜VK-9510时，例如将测定模式设定为彩色超深度、将测定倍率设定为400倍、将每1处的测定范围设定为112μm×84μm、将测定间距设定为0.05μm、将λs轮廓曲线过滤器设定为2.5μm、将λc轮廓曲线过滤器设定为0.08mm来求出即可。
接着，使用图2对探针卡和检测装置进行说明。图2所示的检测装置15具备：探针卡12、支撑探针卡12的支撑部件6、真空夹头8和支撑真空夹头8的平台9。真空夹头8中内置有加热半导体晶片7的加热器10。
探针卡12具备探针卡用基板1、和配置于贯通孔3的探针5。图2所示的探针卡12可以是多个探针卡用基板1(探针卡用基板1、1′、1″)层叠而成的探针卡用层叠基板。探针卡用基板1的贯通孔3与分别设置于探针卡用基板1′、1″的贯通孔3′、3″连通。
支撑部件6例如包含氧化铝质陶瓷、氮化铝质陶瓷或氮化硅质陶瓷等。支撑部件6在与探针卡12的探针5相对的表面部分具备垫14a。垫14a经由内部的电路14b与形成在相反一侧的表面的垫14c电连接。垫14a、14c例如通过光刻技术制作，具有导电性，电路14b例如由Cu、Au、Al、Ni和Pb-Sn合金的至少1种形成。
真空夹头8通过抽吸将半导体晶片7固定。检测装置15在用加热器10将半导体晶片7加热到规定的温度的状态下，使作为针状触针的探针5与在半导体晶片7的半导体元件7a上排列的电极垫13接触，从而可以检测电特性。真空夹头8是用于预先保持待检测的半导体晶片7的构件。因此，也可以将真空夹头8替换为例如静电夹头等其他保持单元。
对于检测装置15中的检测而言，需要电极垫13与探针5高精度对位地发生接触。检测装置15具备未图示的光学对位机构，使用该对位机构将电极垫13与探针5高精度对位。该光学对位机构如下地进行工作，即，通过向半导体晶片照射例如激光等光，从在半导体晶片的规定位置形成的对准图案产生反射光、散射光，同时基于这些反射光、散射光的测定结果测定对准图案的位置。
检测装置15具有具备探针卡用基板1的探针卡12。该探针卡用基板1整体呈黑色，成为不过度反射光的状态。另外，即使反复进行使探针卡用基板1的温度升高至某种程度的高温的使用方法，也可以抑制第一面1A的色调变化。因此，具备探针卡12的检测装置15不易产生由探针卡12中的局部反射等导致的对准错位，并且能够比较长期地没有变动地保持位置对准精度。
接着，对本实施方式的探针卡用基板的制造方法的一例进行说明。首先，使用辊磨机、旋转磨机、振动磨机、珠磨机、砂磨机和搅拌磨机等混合装置，将下述物质与水一起进行湿式混合并进行粉碎来制作浆料，所述物质为：β化率为20％以下的、纯度为98％以上的氮化硅的粉末、作为添加成分的氧化镁(MgO)、钼、铬、铁、镍、锰、钒、铌、钽、钴和钨的至少任1种形成的氧化物的粉末(以下将这些粉末简称为金属氧化物的粉末。)、以及稀土金属的氧化物(例如Sc2O3、Y2O3、La2O3、Ce2O3、Pr6O11、Nd2O3、Pm2O3、Sm2O3、Eu2O3、Gd2O3、Tb2O3、DY2O3、Ho2O3、Er2O3、Tm2O3、Yb2O3和Lu2O3的至少任1种)的各粉末。
在此，将氮化硅的粉末粉碎至粒径(d90)为1μm以下，所述粒径(d90)是指，将粒度分布曲线的累积体积的总和设为100％时的累积体积达到90％的粒径。
氧化镁、金属氧化物的粉末和稀土金属的氧化物的各粉末的添加量例如分别为1质量％以上且2质量％以下、0.3质量％以上且0.8质量％以下、2质量％以上且4质量％以下，其余为氮化硅的粉末。需要说明的是，金属氧化物被还原后，金属与硅键合而成为硅化物。
代替上述的粉末的添加量，将氧化镁、金属氧化物的粉末、稀土金属的氧化物和氧化铝(Al2O3)的粉末分别称量为2质量％以上且6质量％以下、0.3质量％以上且0.8质量％以下、12质量％以上且16质量％以下和0.1质量％以上且0.5质量％以下、其余为氮化硅即可。
在此，存在于探针卡用基板的空孔(即白点)的最大长度可以用钙的含量进行调整。具体地，为了得到第一面1A中的空孔的最大长度为94μm以下的探针卡用基板，以使烧结体中含有的钙的含量为2质量ppm以上且100质量ppm以下的方式添加钙粉末即可。
钙的含量为上述范围时，能够控制空孔的最大长度，同时另一方面，钙的一部分形成晶界相，将氮化硅晶粒之间的结合力提高。
对于氮化硅和添加成分的粉末的混合/粉碎中使用的微球而言，适合为包含不易混入杂质的材质、或相同材料组成的氮化硅烧结体的微球。对于氮化硅和添加成分的粉末的粉碎而言，从提高烧结性的观点出发，优选粉碎至粒径(d90)为3μm以下，所述粒径(d90)是指将粒度分布曲线的累积体积的总和设为100％时的累积体积为90％的粒径。通过混合/粉碎得到的粒度分布可以通过微球的外径、微球的量、浆料的粘度和粉碎时间等进行调整。
接着，向所得到的浆料中加入有机粘结剂并混合后，通过ASTM E 11-61中记载的粒度编号为200的网、或比该网更细的网的筛后进行干燥，得到以氮化硅为主成分的颗粒(以下称为氮化硅颗粒。)。干燥可以利用喷雾干燥机进行，也可以利用其他方法，没有任何问题。
使用粉末压延法将氮化硅颗粒成形为片状而得到陶瓷生坯片，将该陶瓷生坯片切断为规定的长度，得到以氮化硅为主成分的成形体(以下称为氮化硅成形体。)。或者，使用加压成形法代替粉末压延法将氮化硅颗粒填充到成形模具中后进行加压，由此得到氮化硅成形体。
接着，向相对密度为55％以上且95％以下的包含氮化硅烧结体的匣钵的内部放入所得到的氮化硅成形体，使用设置了石墨电阻发热体的烧结炉进行烧结。此时，将相对于氮化硅成形体的100质量份为2质量份以上且小于100质量份的量的、组成与氮化硅成形体近似的抑制剂配置于氮化硅成形体的周围进行烧结。由此，可以抑制氮化硅成形体的含有成分的挥发。
关于烧结条件，在真空气氛中从室温升温至300～1000℃。然后，导入氮气，将氮分压保持在15～900kPa。然后推进升温，由此在1000～1400℃附近，添加成分经过固相反应而形成液相成分，并且在1400℃以上的温区不可逆地发生氮化硅的从α型向β型的相变。
将烧结温度设为1640℃以上且1750℃以下并保持4小时以上且10小时以下后，以170℃/小时以上且230℃/小时以下的降温速度进行冷却，由此可以得到氮化硅质陶瓷。
在此，为了在将氮化硅质陶瓷研磨而得到的探针卡用基板中得到包含金属硅化物的晶体相，将粉碎氮化硅的粉末时的粒径(d90)、金属氧化物的粉末的含量、烧结温度和保持时间设为上述的范围即可。
对于探针卡用基板中的黄长石的含量而言，稀土金属的氧化物的粉末的含量和降温速度的影响较大，将稀土金属的氧化物的粉末的含量和降温速度设为上述的范围即可将其含量设为5质量％以下。
对所得到的氮化硅质陶瓷的两个主面用双面抛光机进行研磨。在此，将抛光盘的材质设为铸铁、将抛光盘的周速适当设定在1.4m/s以上且2.8m/s的范围即可。该研磨中，供给包含平均粒径(d50)为6μm以上且14μm以下的范围的金刚石磨粒的浆料即可。
用抛光盘的转速和金刚石磨粒的平均粒径(d50)进行调整即可将第一面4的由粗糙度曲线求出的峰度(Rku)、斜度(Rsk)和粗糙度曲线中25％负载长度率与75％负载长度率之间的切断水平差(Rδc)设为上述的范围。
在经研磨的氮化硅质陶瓷的厚度方向实施激光加工或机械加工，由此可以得到形成了安装孔和贯通孔的本实施方式的探针卡用基板。
根据本公开的探针卡用基板，能够抑制反射、并且也抑制整体色调的变化，能够比较长期地良好地保持光学对位的精度。
实施例
按照上述制造方法制造探针卡用基板1。作为氮化硅的粉末的添加成分，分别加入氧化镁的粉末2.5质量％、氧化钨的粉末0.7质量％、氧化镁的粉末2.5质量％、氧化铁的粉末1.4质量％、氧化铒的粉末14.6质量％。
图3(a)是用电子显微镜拍摄本实施例的探针卡用基板而得到的背散射电子(BEM)像。图3(b)是通过能量分散型X射线分光(EDS)法分析存在于图3(a)的(001)点处的元素的结果，是通过照射电子射线而得到的谱图。
与图3(b)相比可知，如图3(a)中显出白色所示的，探针卡用基板1中分散有钨(W)与硅(Si)的化合物即钨这样的金属的硅化物的晶体相。图3(a)的BEM像中虽然显出白色，但这些金属硅化物呈黑色，探针卡用基板1整体呈黑色。
图4(a)为本实施例的探针卡用基板的表面的另一部位的电子显微镜照片，图4(b)是由存在于图4(a)的四边形框内的元素得到的、基于能量分散型X射线分光(EDS)法的分析结果。从图4(a)可以确认，探针卡用基板1中，在特征性氮化硅的柱状晶体处分散有与氮化硅不同的晶体相。从图4(b)可以确认，该晶体相含有大量硅(Si)和铁(Fe)，可以判断是铁(Fe)的硅化物(Si)。探针卡用基板1中这样地分散有大量金属硅化物的晶体相。
本公开并不限于前述的实施方式，能够在技术方案中记载的范围内进行各种变更、改良。
符号说明
1 探针卡用基板
1A 第一面
1B 第二面
2 安装孔
3 贯通孔
5 探针
6 支撑部件
8 真空夹头
9 平台
12 探针卡。

Claims (11)

1.一种探针卡用基板，其特征在于，
具备多个为了配置与测定对象物抵接的探针的贯通孔，
包含氮化硅质陶瓷，
具备与所述测定对象物相对的第一面、和位于该第一面的相反侧的第二面，
包含多个金属硅化物的晶体相，
构成所述金属硅化物的金属为选自钼、铬、铁、镍、锰、钒、铌、钽、钴和钨中的至少1种，所述金属硅化物的晶体相存在于所述氮化硅质陶瓷中，
所述探针卡用基板中，所述金属硅化物的含量的合计为0.3质量％以上且0.7质量％以下。
2.根据权利要求1所述的探针卡用基板，其中，
在所述第一面没有露出构成所述金属硅化物的金属自身的粒状体。
3.根据权利要求1或2所述的探针卡用基板，其中，
所述第一面包含含量为5质量％以下的黄长石。
4.根据权利要求1或2所述的探针卡用基板，其中，
所述第一面具备最大长度为94μm以下的空孔。
5.根据权利要求1或2所述的探针卡用基板，其中，
构成陶瓷的总成分100质量％中，所述氮化硅质陶瓷含有至少50质量％以上的氮化硅。
6.根据权利要求1或2所述的探针卡用基板，其中，
所述第一面的由粗糙度曲线求出的峰度Rku为2以上且16以下。
7.根据权利要求1或2所述的探针卡用基板，其中，
所述第一面的由粗糙度曲线求出的斜度Rsk为-0.9以上且0.8以下。
8.根据权利要求1或2所述的探针卡用基板，其中，
所述第一面的、粗糙度曲线中25％负载长度率与75％负载长度率之间的切断水平差Rδc为0.4μm以上且0.8μm以下。
9.根据权利要求1或2所述的探针卡用基板，其中，
所述金属硅化物的晶体相在所述第一面的表面露出。
10.一种探针卡，其特征在于，具备
权利要求1～9中任一项所述的探针卡用基板、和
位于所述贯通孔的探针。
11.一种检测装置，其具备权利要求10所述的探针卡。
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KR20190052067A (ko) 2019-05-15
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