JP4642349B2 - 縦型熱処理装置及びその低温域温度収束方法 - Google Patents

縦型熱処理装置及びその低温域温度収束方法 Download PDF

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Publication number
JP4642349B2
JP4642349B2 JP2003432596A JP2003432596A JP4642349B2 JP 4642349 B2 JP4642349 B2 JP 4642349B2 JP 2003432596 A JP2003432596 A JP 2003432596A JP 2003432596 A JP2003432596 A JP 2003432596A JP 4642349 B2 JP4642349 B2 JP 4642349B2
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JP
Japan
Prior art keywords
temperature
heater
processing container
blower
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003432596A
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English (en)
Japanese (ja)
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JP2005188869A (ja
Inventor
誠 中島
孝規 斉藤
剛 滝澤
学 本間
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003432596A priority Critical patent/JP4642349B2/ja
Priority to US10/584,258 priority patent/US7432475B2/en
Priority to PCT/JP2004/019251 priority patent/WO2005064254A1/ja
Priority to KR1020067006681A priority patent/KR100907598B1/ko
Priority to TW093140571A priority patent/TW200527492A/zh
Publication of JP2005188869A publication Critical patent/JP2005188869A/ja
Application granted granted Critical
Publication of JP4642349B2 publication Critical patent/JP4642349B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/18—Arrangement of controlling, monitoring, alarm or like devices

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
JP2003432596A 2003-12-26 2003-12-26 縦型熱処理装置及びその低温域温度収束方法 Expired - Fee Related JP4642349B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003432596A JP4642349B2 (ja) 2003-12-26 2003-12-26 縦型熱処理装置及びその低温域温度収束方法
US10/584,258 US7432475B2 (en) 2003-12-26 2004-12-22 Vertical heat treatment device and method controlling the same
PCT/JP2004/019251 WO2005064254A1 (ja) 2003-12-26 2004-12-22 縦型熱処理装置及びその制御方法
KR1020067006681A KR100907598B1 (ko) 2003-12-26 2004-12-22 종형 열처리 장치 및 그 제어 방법
TW093140571A TW200527492A (en) 2003-12-26 2004-12-24 Vertical heat treatment device and method of controlling the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003432596A JP4642349B2 (ja) 2003-12-26 2003-12-26 縦型熱処理装置及びその低温域温度収束方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010136939A Division JP5613471B2 (ja) 2010-06-16 2010-06-16 縦型熱処理装置及びその制御方法

Publications (2)

Publication Number Publication Date
JP2005188869A JP2005188869A (ja) 2005-07-14
JP4642349B2 true JP4642349B2 (ja) 2011-03-02

Family

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Family Applications (1)

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JP2003432596A Expired - Fee Related JP4642349B2 (ja) 2003-12-26 2003-12-26 縦型熱処理装置及びその低温域温度収束方法

Country Status (5)

Country Link
US (1) US7432475B2 (enExample)
JP (1) JP4642349B2 (enExample)
KR (1) KR100907598B1 (enExample)
TW (1) TW200527492A (enExample)
WO (1) WO2005064254A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
JP5312765B2 (ja) * 2007-01-26 2013-10-09 株式会社日立国際電気 基板処理方法及び半導体製造装置
JP4870604B2 (ja) * 2007-03-29 2012-02-08 株式会社ニューフレアテクノロジー 気相成長装置
JP2009010009A (ja) * 2007-06-26 2009-01-15 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP5374061B2 (ja) * 2008-03-25 2013-12-25 日本碍子株式会社 電子部品用焼成炉とその炉圧制御方法
JP5504793B2 (ja) 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
JP5613471B2 (ja) * 2010-06-16 2014-10-22 東京エレクトロン株式会社 縦型熱処理装置及びその制御方法
US9513003B2 (en) * 2010-08-16 2016-12-06 Purpose Company Limited Combustion apparatus, method for combustion control, board, combustion control system and water heater
KR101512874B1 (ko) * 2010-09-07 2015-04-16 도쿄엘렉트론가부시키가이샤 종형 열처리 장치 및 그 제어 방법
JP2012080080A (ja) * 2010-09-07 2012-04-19 Tokyo Electron Ltd 縦型熱処理装置及びその制御方法
KR101509286B1 (ko) * 2010-09-09 2015-04-06 도쿄엘렉트론가부시키가이샤 종형 열처리 장치
JP5893280B2 (ja) 2010-09-09 2016-03-23 東京エレクトロン株式会社 縦型熱処理装置
JP2012172871A (ja) 2011-02-18 2012-09-10 Tokyo Electron Ltd 熱処理装置および熱処理装置の温度測定方法
JP5662845B2 (ja) 2011-03-01 2015-02-04 東京エレクトロン株式会社 熱処理装置およびその制御方法
JP6262148B2 (ja) * 2012-12-07 2018-01-17 株式会社日立国際電気 基板処理装置、基板処理方法、半導体装置の製造方法および制御プログラム
KR101676756B1 (ko) * 2014-04-23 2016-11-18 (주) 예스티 가동형 풍량 조절부재를 포함하는 열처리 장치
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
CN106403630A (zh) * 2016-09-14 2017-02-15 成都中光电科技有限公司 一种tft‑lcd液晶玻璃池壁冷却风机调温装置
JP6964737B2 (ja) * 2017-01-12 2021-11-10 東京エレクトロン株式会社 熱処理装置及び温度制御方法
JP6804309B2 (ja) * 2017-01-12 2020-12-23 東京エレクトロン株式会社 熱処理装置及び温度制御方法
EP3752307A4 (en) * 2018-02-18 2021-11-17 Markforged, Inc. FRITTING OVEN
JP6905634B2 (ja) * 2018-02-23 2021-07-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、及びプログラム
JP7012585B2 (ja) * 2018-04-12 2022-01-28 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US12489002B2 (en) * 2021-08-30 2025-12-02 Taiwan Semiconductor Manufacturing Company Ltd. Annealing apparatus and method of operating the same
US20240424572A1 (en) * 2021-09-13 2024-12-26 Desktop Metal, Inc. Systems and methods for providing inert environments for additive manufacturing and processing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0379985A (ja) * 1989-08-22 1991-04-04 Deisuko Haitetsuku:Kk 電気炉の温度制御方法
JP4365017B2 (ja) * 2000-08-23 2009-11-18 東京エレクトロン株式会社 熱処理装置の降温レート制御方法および熱処理装置

Also Published As

Publication number Publication date
JP2005188869A (ja) 2005-07-14
TW200527492A (en) 2005-08-16
TWI364786B (enExample) 2012-05-21
WO2005064254A1 (ja) 2005-07-14
US20070148606A1 (en) 2007-06-28
US7432475B2 (en) 2008-10-07
KR100907598B1 (ko) 2009-07-14
KR20060107740A (ko) 2006-10-16

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