JP4642349B2 - 縦型熱処理装置及びその低温域温度収束方法 - Google Patents
縦型熱処理装置及びその低温域温度収束方法 Download PDFInfo
- Publication number
- JP4642349B2 JP4642349B2 JP2003432596A JP2003432596A JP4642349B2 JP 4642349 B2 JP4642349 B2 JP 4642349B2 JP 2003432596 A JP2003432596 A JP 2003432596A JP 2003432596 A JP2003432596 A JP 2003432596A JP 4642349 B2 JP4642349 B2 JP 4642349B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- heater
- processing container
- blower
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 24
- 238000001816 cooling Methods 0.000 claims description 12
- 230000000630 rising effect Effects 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000011084 recovery Methods 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 18
- 239000007789 gas Substances 0.000 description 9
- 238000004904 shortening Methods 0.000 description 5
- 238000007664 blowing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/18—Arrangement of controlling, monitoring, alarm or like devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
Description
w 半導体ウエハ(被処理体)
2 開口部
3 ガス導入部
4 排気部
5 処理容器
5b 胴部
6 蓋体
7 保持具
8 ヒータ
16 送風機
21 温度センサ
22 温度コントローラ(制御装置)
Claims (1)
- 上下方向に所定の間隔で保持された複数枚の被処理体を収容する石英製の処理容器と、該処理容器の周囲に設けられ、処理容器内の被処理体を所定の熱処理温度に加熱するヒータと、該ヒータ内に空気を送風して処理容器を冷却する送風機と、前記処理容器内の温度を検知する温度センサと、被処理体を100〜500℃の低温域の所定温度で熱処理する際の昇温過程で所定温度に収束させるために前記ヒータ及び送風機を制御する制御装置とを備え、前記制御装置は、ヒータに所定温度の直前まで電力を加えた後、ヒータへの電力を0に落とすと同時に、前記送風機に電力を供給してヒータ及び処理容器を強制的に冷却し、所定温度の前後になったら送風機への電力を0に落とすと同時にヒータに所定温度を維持するために必要な電力を供給し、前記ヒータは、前記処理容器の周囲を覆う水冷ジャケットの内側に抵抗発熱体を配設して成り、前記処理容器は上部、胴部及び下部からなり、その胴部の肉厚が上部及び下部のそれぞれの肉厚よりも薄く形成されていることを特徴とする縦型熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003432596A JP4642349B2 (ja) | 2003-12-26 | 2003-12-26 | 縦型熱処理装置及びその低温域温度収束方法 |
US10/584,258 US7432475B2 (en) | 2003-12-26 | 2004-12-22 | Vertical heat treatment device and method controlling the same |
KR1020067006681A KR100907598B1 (ko) | 2003-12-26 | 2004-12-22 | 종형 열처리 장치 및 그 제어 방법 |
PCT/JP2004/019251 WO2005064254A1 (ja) | 2003-12-26 | 2004-12-22 | 縦型熱処理装置及びその制御方法 |
TW093140571A TW200527492A (en) | 2003-12-26 | 2004-12-24 | Vertical heat treatment device and method of controlling the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003432596A JP4642349B2 (ja) | 2003-12-26 | 2003-12-26 | 縦型熱処理装置及びその低温域温度収束方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010136939A Division JP5613471B2 (ja) | 2010-06-16 | 2010-06-16 | 縦型熱処理装置及びその制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005188869A JP2005188869A (ja) | 2005-07-14 |
JP4642349B2 true JP4642349B2 (ja) | 2011-03-02 |
Family
ID=34736482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003432596A Expired - Fee Related JP4642349B2 (ja) | 2003-12-26 | 2003-12-26 | 縦型熱処理装置及びその低温域温度収束方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7432475B2 (ja) |
JP (1) | JP4642349B2 (ja) |
KR (1) | KR100907598B1 (ja) |
TW (1) | TW200527492A (ja) |
WO (1) | WO2005064254A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
JP5312765B2 (ja) * | 2007-01-26 | 2013-10-09 | 株式会社日立国際電気 | 基板処理方法及び半導体製造装置 |
JP4870604B2 (ja) * | 2007-03-29 | 2012-02-08 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
JP2009010009A (ja) * | 2007-06-26 | 2009-01-15 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP5374061B2 (ja) * | 2008-03-25 | 2013-12-25 | 日本碍子株式会社 | 電子部品用焼成炉とその炉圧制御方法 |
JP5504793B2 (ja) | 2009-09-26 | 2014-05-28 | 東京エレクトロン株式会社 | 熱処理装置及び冷却方法 |
JP5613471B2 (ja) * | 2010-06-16 | 2014-10-22 | 東京エレクトロン株式会社 | 縦型熱処理装置及びその制御方法 |
US9513003B2 (en) * | 2010-08-16 | 2016-12-06 | Purpose Company Limited | Combustion apparatus, method for combustion control, board, combustion control system and water heater |
JP2012080080A (ja) * | 2010-09-07 | 2012-04-19 | Tokyo Electron Ltd | 縦型熱処理装置及びその制御方法 |
KR101512874B1 (ko) * | 2010-09-07 | 2015-04-16 | 도쿄엘렉트론가부시키가이샤 | 종형 열처리 장치 및 그 제어 방법 |
KR101509286B1 (ko) * | 2010-09-09 | 2015-04-06 | 도쿄엘렉트론가부시키가이샤 | 종형 열처리 장치 |
JP5893280B2 (ja) | 2010-09-09 | 2016-03-23 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP2012172871A (ja) | 2011-02-18 | 2012-09-10 | Tokyo Electron Ltd | 熱処理装置および熱処理装置の温度測定方法 |
JP5662845B2 (ja) | 2011-03-01 | 2015-02-04 | 東京エレクトロン株式会社 | 熱処理装置およびその制御方法 |
US20150370245A1 (en) * | 2012-12-07 | 2015-12-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program |
KR101676756B1 (ko) * | 2014-04-23 | 2016-11-18 | (주) 예스티 | 가동형 풍량 조절부재를 포함하는 열처리 장치 |
US20170207078A1 (en) * | 2016-01-15 | 2017-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition apparatus and semiconductor process |
CN106403630A (zh) * | 2016-09-14 | 2017-02-15 | 成都中光电科技有限公司 | 一种tft‑lcd液晶玻璃池壁冷却风机调温装置 |
JP6804309B2 (ja) * | 2017-01-12 | 2020-12-23 | 東京エレクトロン株式会社 | 熱処理装置及び温度制御方法 |
JP6964737B2 (ja) * | 2017-01-12 | 2021-11-10 | 東京エレクトロン株式会社 | 熱処理装置及び温度制御方法 |
US11913724B2 (en) | 2018-02-18 | 2024-02-27 | Markforged, Inc. | Sintering furnace |
JP7012585B2 (ja) * | 2018-04-12 | 2022-01-28 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
US20230060692A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Annealing apparatus and method of operating the same |
WO2023039286A1 (en) * | 2021-09-13 | 2023-03-16 | Desktop Metal, Inc. | Systems and methods for providing inert environments for additive manufacturing and processing |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0379985A (ja) * | 1989-08-22 | 1991-04-04 | Deisuko Haitetsuku:Kk | 電気炉の温度制御方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4365017B2 (ja) * | 2000-08-23 | 2009-11-18 | 東京エレクトロン株式会社 | 熱処理装置の降温レート制御方法および熱処理装置 |
-
2003
- 2003-12-26 JP JP2003432596A patent/JP4642349B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-22 US US10/584,258 patent/US7432475B2/en active Active
- 2004-12-22 WO PCT/JP2004/019251 patent/WO2005064254A1/ja active Application Filing
- 2004-12-22 KR KR1020067006681A patent/KR100907598B1/ko active IP Right Grant
- 2004-12-24 TW TW093140571A patent/TW200527492A/zh unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0379985A (ja) * | 1989-08-22 | 1991-04-04 | Deisuko Haitetsuku:Kk | 電気炉の温度制御方法 |
Also Published As
Publication number | Publication date |
---|---|
US7432475B2 (en) | 2008-10-07 |
WO2005064254A1 (ja) | 2005-07-14 |
JP2005188869A (ja) | 2005-07-14 |
KR100907598B1 (ko) | 2009-07-14 |
US20070148606A1 (en) | 2007-06-28 |
TW200527492A (en) | 2005-08-16 |
KR20060107740A (ko) | 2006-10-16 |
TWI364786B (ja) | 2012-05-21 |
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