JP4406535B2 - ショットキーダイオード付きトランジスタ - Google Patents

ショットキーダイオード付きトランジスタ Download PDF

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Publication number
JP4406535B2
JP4406535B2 JP2003005271A JP2003005271A JP4406535B2 JP 4406535 B2 JP4406535 B2 JP 4406535B2 JP 2003005271 A JP2003005271 A JP 2003005271A JP 2003005271 A JP2003005271 A JP 2003005271A JP 4406535 B2 JP4406535 B2 JP 4406535B2
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JP
Japan
Prior art keywords
region
diffusion region
groove
reverse blocking
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003005271A
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English (en)
Japanese (ja)
Other versions
JP2004221218A5 (enrdf_load_stackoverflow
JP2004221218A (ja
Inventor
徹 黒崎
寛明 宍戸
伸治 九里
宏介 大島
瑞枝 北田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP2003005271A priority Critical patent/JP4406535B2/ja
Publication of JP2004221218A publication Critical patent/JP2004221218A/ja
Publication of JP2004221218A5 publication Critical patent/JP2004221218A5/ja
Application granted granted Critical
Publication of JP4406535B2 publication Critical patent/JP4406535B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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  • Electrodes Of Semiconductors (AREA)
JP2003005271A 2003-01-14 2003-01-14 ショットキーダイオード付きトランジスタ Expired - Fee Related JP4406535B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003005271A JP4406535B2 (ja) 2003-01-14 2003-01-14 ショットキーダイオード付きトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003005271A JP4406535B2 (ja) 2003-01-14 2003-01-14 ショットキーダイオード付きトランジスタ

Publications (3)

Publication Number Publication Date
JP2004221218A JP2004221218A (ja) 2004-08-05
JP2004221218A5 JP2004221218A5 (enrdf_load_stackoverflow) 2005-10-27
JP4406535B2 true JP4406535B2 (ja) 2010-01-27

Family

ID=32895962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003005271A Expired - Fee Related JP4406535B2 (ja) 2003-01-14 2003-01-14 ショットキーダイオード付きトランジスタ

Country Status (1)

Country Link
JP (1) JP4406535B2 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107293601A (zh) * 2016-04-12 2017-10-24 朱江 一种肖特基半导体装置及其制备方法
WO2025106311A1 (en) * 2023-11-14 2025-05-22 Wolfspeed, Inc. Split support shield structures for trenched semiconductor devices with integrated schottky diodes

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4292427B2 (ja) 2006-12-04 2009-07-08 サンケン電気株式会社 絶縁ゲート型電界効果トランジスタ及びその製造方法
JP5526496B2 (ja) * 2008-06-02 2014-06-18 サンケン電気株式会社 電界効果半導体装置及びその製造方法
DE102009028240A1 (de) * 2009-08-05 2011-02-10 Robert Bosch Gmbh Feldeffekttransistor mit integrierter TJBS-Diode
JP2012248686A (ja) * 2011-05-27 2012-12-13 Elpida Memory Inc 半導体装置及びその製造方法
JP6036765B2 (ja) * 2014-08-22 2016-11-30 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107293601A (zh) * 2016-04-12 2017-10-24 朱江 一种肖特基半导体装置及其制备方法
CN107293601B (zh) * 2016-04-12 2021-10-22 朱江 一种肖特基半导体装置及其制备方法
WO2025106311A1 (en) * 2023-11-14 2025-05-22 Wolfspeed, Inc. Split support shield structures for trenched semiconductor devices with integrated schottky diodes

Also Published As

Publication number Publication date
JP2004221218A (ja) 2004-08-05

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