JP4250325B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4250325B2
JP4250325B2 JP2000335180A JP2000335180A JP4250325B2 JP 4250325 B2 JP4250325 B2 JP 4250325B2 JP 2000335180 A JP2000335180 A JP 2000335180A JP 2000335180 A JP2000335180 A JP 2000335180A JP 4250325 B2 JP4250325 B2 JP 4250325B2
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JP
Japan
Prior art keywords
current
circuit
cell array
memory cell
latch circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000335180A
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English (en)
Japanese (ja)
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JP2002140899A5 (enExample
JP2002140899A (ja
Inventor
浩司 細野
民雄 池橋
智晴 田中
賢一 今宮
寛 中村
健 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000335180A priority Critical patent/JP4250325B2/ja
Priority to KR10-2001-0067359A priority patent/KR100483640B1/ko
Priority to US09/985,017 priority patent/US6507518B2/en
Publication of JP2002140899A publication Critical patent/JP2002140899A/ja
Priority to US10/315,050 priority patent/US6657896B2/en
Priority to US10/674,404 priority patent/US6859401B2/en
Publication of JP2002140899A5 publication Critical patent/JP2002140899A5/ja
Application granted granted Critical
Publication of JP4250325B2 publication Critical patent/JP4250325B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

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  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2000335180A 2000-11-01 2000-11-01 半導体記憶装置 Expired - Lifetime JP4250325B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000335180A JP4250325B2 (ja) 2000-11-01 2000-11-01 半導体記憶装置
KR10-2001-0067359A KR100483640B1 (ko) 2000-11-01 2001-10-31 반도체 기억 장치
US09/985,017 US6507518B2 (en) 2000-11-01 2001-11-01 Fail number detecting circuit of flash memory
US10/315,050 US6657896B2 (en) 2000-11-01 2002-12-10 Fail number detecting circuit of flash memory
US10/674,404 US6859401B2 (en) 2000-11-01 2003-10-01 Fail number detecting circuit of flash memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000335180A JP4250325B2 (ja) 2000-11-01 2000-11-01 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2002140899A JP2002140899A (ja) 2002-05-17
JP2002140899A5 JP2002140899A5 (enExample) 2005-07-21
JP4250325B2 true JP4250325B2 (ja) 2009-04-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000335180A Expired - Lifetime JP4250325B2 (ja) 2000-11-01 2000-11-01 半導体記憶装置

Country Status (3)

Country Link
US (3) US6507518B2 (enExample)
JP (1) JP4250325B2 (enExample)
KR (1) KR100483640B1 (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4250325B2 (ja) * 2000-11-01 2009-04-08 株式会社東芝 半導体記憶装置
US6480419B2 (en) * 2001-02-22 2002-11-12 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory
KR100437461B1 (ko) * 2002-01-12 2004-06-23 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 소거, 프로그램,그리고 카피백 프로그램 방법
KR100512178B1 (ko) * 2003-05-28 2005-09-02 삼성전자주식회사 플렉서블한 열 리던던시 스킴을 갖는 반도체 메모리 장치
JP2005056394A (ja) * 2003-07-18 2005-03-03 Toshiba Corp 記憶装置及びメモリカード
JP4424952B2 (ja) * 2003-09-16 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR100568107B1 (ko) * 2003-10-24 2006-04-05 삼성전자주식회사 고속 및 저전력 전압 레벨 변환 회로
KR100528483B1 (ko) * 2004-01-02 2005-11-15 삼성전자주식회사 패스/페일 점검이 가능한 불휘발성 반도체 메모리장치
JP2005353242A (ja) 2004-06-14 2005-12-22 Toshiba Corp 不揮発性半導体記憶装置及びそのデータ書き込み方法
JP2006012367A (ja) 2004-06-29 2006-01-12 Toshiba Corp 不揮発性半導体記憶装置
EP1617438B1 (en) * 2004-07-14 2006-10-25 STMicroelectronics S.r.l. Redundancy based NAND flash memory
JP4703148B2 (ja) * 2004-09-08 2011-06-15 株式会社東芝 不揮発性半導体記憶装置
FR2875352B1 (fr) * 2004-09-10 2007-05-11 St Microelectronics Sa Procede de detection et de correction d'erreurs pour une memoire et circuit integre correspondant
JP4261462B2 (ja) * 2004-11-05 2009-04-30 株式会社東芝 不揮発性メモリシステム
JP4261461B2 (ja) 2004-11-05 2009-04-30 株式会社東芝 半導体集積回路装置、及びそれを用いた不揮発性メモリシステム
KR100648277B1 (ko) * 2004-12-30 2006-11-23 삼성전자주식회사 프로그램 시간을 줄일 수 있는 플래시 메모리 장치
KR100666172B1 (ko) 2005-01-04 2007-01-09 삼성전자주식회사 로드 공급 와이어드 오어 구조를 가지는 불휘발성 반도체메모리 장치와, 이에 대한 구동방법
KR100666171B1 (ko) * 2005-01-10 2007-01-09 삼성전자주식회사 로드 프리 타입의 와이어드 오어 구조를 가지는 불휘발성반도체 메모리 장치와, 이에 대한 구동방법
KR100567158B1 (ko) * 2005-01-10 2006-04-03 삼성전자주식회사 캐쉬기능을 가지는 와이어드 오어 타입의 페이지 버퍼 및이를 포함하는 불휘발성 반도체 메모리 장치, 그리고,이를 이용한 프로그램 방법
KR100666170B1 (ko) 2005-01-17 2007-01-09 삼성전자주식회사 결함 페이지 버퍼로부터의 데이터 전송이 차단되는와이어드 오어 구조의 불휘발성 반도체 메모리 장치
JP4664804B2 (ja) * 2005-04-28 2011-04-06 株式会社東芝 不揮発性半導体記憶装置
US7239557B2 (en) * 2005-06-17 2007-07-03 Micron Technology, Inc. Program method with optimized voltage level for flash memory
DE602005006791D1 (de) * 2005-07-28 2008-06-26 St Microelectronics Srl Halbleiterspeicher und sein Seitenpufferspeicher mit verbessertem Layout
JP2007102848A (ja) * 2005-09-30 2007-04-19 Toshiba Corp 半導体集積回路装置
JP4761910B2 (ja) 2005-10-05 2011-08-31 株式会社東芝 不揮発性半導体記憶装置及びそれを用いた不揮発性メモリシステム
JP4864006B2 (ja) * 2006-04-06 2012-01-25 株式会社アドバンテスト 試験装置および試験方法
JP4874721B2 (ja) * 2006-06-23 2012-02-15 株式会社東芝 半導体記憶装置
US7355892B2 (en) * 2006-06-30 2008-04-08 Sandisk Corporation Partial page fail bit detection in flash memory devices
US20080072119A1 (en) * 2006-08-31 2008-03-20 Rodney Rozman Allowable bit errors per sector in memory devices
JP2008077766A (ja) 2006-09-21 2008-04-03 Renesas Technology Corp 半導体装置
CN101589437B (zh) * 2006-11-27 2012-08-29 桑迪士克股份有限公司 用于验证编程的分段位扫描
DE102006061060B4 (de) * 2006-12-22 2012-12-20 Bauerfeind Ag Kniegelenkbandage
KR101095639B1 (ko) * 2006-12-26 2011-12-19 가부시키가이샤 어드밴티스트 시험 장치 및 시험 방법
US7577030B2 (en) 2007-01-17 2009-08-18 Kabushiki Kaisha Toshiba Semiconductor storage device
JP5032155B2 (ja) 2007-03-02 2012-09-26 株式会社東芝 不揮発性半導体記憶装置、及び不揮発性半導体記憶システム
US7738296B2 (en) * 2007-12-13 2010-06-15 Macronix International Co., Ltd. Method for reading nonvolatile memory at power-on stage
US7864578B2 (en) 2008-06-30 2011-01-04 Kabushiki Kaisha Toshiba Semiconductor memory repairing a defective bit and semiconductor memory system
JP2010020843A (ja) * 2008-07-10 2010-01-28 Toshiba Corp 半導体記憶装置
JP5172555B2 (ja) 2008-09-08 2013-03-27 株式会社東芝 半導体記憶装置
JP5284737B2 (ja) * 2008-09-19 2013-09-11 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とそのフェイルビット数計数方法
JP2010244668A (ja) * 2009-03-18 2010-10-28 Toshiba Corp 不揮発性半導体記憶装置
JP5039079B2 (ja) * 2009-03-23 2012-10-03 株式会社東芝 不揮発性半導体記憶装置
JP2011170927A (ja) * 2010-02-19 2011-09-01 Toshiba Corp 半導体記憶装置
JP2011198414A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 半導体記憶装置
US8208314B2 (en) * 2010-06-01 2012-06-26 Aptina Imaging Corporation Sequential access memory elements
JP5330425B2 (ja) 2011-02-09 2013-10-30 株式会社東芝 不揮発性半導体メモリ
JP2012203965A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体記憶装置
JP5259765B2 (ja) * 2011-03-29 2013-08-07 株式会社東芝 不揮発性半導体メモリ
JP5542737B2 (ja) 2011-05-12 2014-07-09 株式会社東芝 不揮発性半導体記憶装置
TWI476775B (zh) * 2012-07-27 2015-03-11 Eon Silicon Solution Inc Acquisition Method of Damaged Bit Line in Nonvolatile Memory Device
JP2014053060A (ja) 2012-09-07 2014-03-20 Toshiba Corp 半導体記憶装置及びその制御方法
JP2014063551A (ja) 2012-09-21 2014-04-10 Toshiba Corp 半導体記憶装置
KR102342849B1 (ko) * 2015-03-04 2021-12-23 삼성전자주식회사 비휘발성 메모리 장치, 메모리 시스템, 상기 비휘발성 메모리 장치의 동작 방법 및 상기 메모리 시스템의 동작 방법
KR20170091925A (ko) * 2016-02-02 2017-08-10 에스케이하이닉스 주식회사 전류 센싱 회로 및 이를 포함하는 메모리 장치
JP6371423B2 (ja) * 2017-01-17 2018-08-08 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
JP6757447B1 (ja) 2019-06-12 2020-09-16 力晶積成電子製造股▲ふん▼有限公司Ｐｏｗｅｒｃｈｉｐ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ フェイルビット数計数回路及び不揮発性半導体記憶装置
CN111445943B (zh) * 2020-04-15 2022-02-11 武汉金汤信安科技有限公司 一种片上一次可编程电路

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JP2002063793A (ja) * 2000-08-18 2002-02-28 Fujitsu Ltd 半導体記憶装置の読み出し装置および読み出し方法
JP4250325B2 (ja) * 2000-11-01 2009-04-08 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
KR20020042750A (ko) 2002-06-07
US20040062099A1 (en) 2004-04-01
KR100483640B1 (ko) 2005-04-18
JP2002140899A (ja) 2002-05-17
US20020051385A1 (en) 2002-05-02
US6657896B2 (en) 2003-12-02
US20030081459A1 (en) 2003-05-01
US6859401B2 (en) 2005-02-22
US6507518B2 (en) 2003-01-14

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