FR2875352B1 - Procede de detection et de correction d'erreurs pour une memoire et circuit integre correspondant - Google Patents

Procede de detection et de correction d'erreurs pour une memoire et circuit integre correspondant

Info

Publication number
FR2875352B1
FR2875352B1 FR0409650A FR0409650A FR2875352B1 FR 2875352 B1 FR2875352 B1 FR 2875352B1 FR 0409650 A FR0409650 A FR 0409650A FR 0409650 A FR0409650 A FR 0409650A FR 2875352 B1 FR2875352 B1 FR 2875352B1
Authority
FR
France
Prior art keywords
detecting
memory
integrated circuit
correcting errors
corresponding integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0409650A
Other languages
English (en)
Other versions
FR2875352A1 (fr
Inventor
Philippe Gendrier
Philippe Candelier
Richard Fournel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0409650A priority Critical patent/FR2875352B1/fr
Priority to US11/220,515 priority patent/US7502985B2/en
Publication of FR2875352A1 publication Critical patent/FR2875352A1/fr
Application granted granted Critical
Publication of FR2875352B1 publication Critical patent/FR2875352B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/37Decoding methods or techniques, not specific to the particular type of coding provided for in groups H03M13/03 - H03M13/35
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/03Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
    • H03M13/05Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
    • H03M13/09Error detection only, e.g. using cyclic redundancy check [CRC] codes or single parity bit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/03Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
    • H03M13/05Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
    • H03M13/13Linear codes
    • H03M13/19Single error correction without using particular properties of the cyclic codes, e.g. Hamming codes, extended or generalised Hamming codes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/35Unequal or adaptive error protection, e.g. by providing a different level of protection according to significance of source information or by adapting the coding according to the change of transmission channel characteristics
FR0409650A 2004-09-10 2004-09-10 Procede de detection et de correction d'erreurs pour une memoire et circuit integre correspondant Expired - Fee Related FR2875352B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0409650A FR2875352B1 (fr) 2004-09-10 2004-09-10 Procede de detection et de correction d'erreurs pour une memoire et circuit integre correspondant
US11/220,515 US7502985B2 (en) 2004-09-10 2005-09-07 Method of detecting and correcting errors for a memory and corresponding integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0409650A FR2875352B1 (fr) 2004-09-10 2004-09-10 Procede de detection et de correction d'erreurs pour une memoire et circuit integre correspondant

Publications (2)

Publication Number Publication Date
FR2875352A1 FR2875352A1 (fr) 2006-03-17
FR2875352B1 true FR2875352B1 (fr) 2007-05-11

Family

ID=34949632

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0409650A Expired - Fee Related FR2875352B1 (fr) 2004-09-10 2004-09-10 Procede de detection et de correction d'erreurs pour une memoire et circuit integre correspondant

Country Status (2)

Country Link
US (1) US7502985B2 (fr)
FR (1) FR2875352B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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KR100707200B1 (ko) * 2005-07-22 2007-04-13 삼성전자주식회사 핀-타입 채널 영역을 갖는 비휘발성 메모리 소자 및 그제조 방법
KR100802059B1 (ko) * 2006-09-06 2008-02-12 삼성전자주식회사 읽기 디스터브로 인한 배드 블록의 생성을 억제할 수 있는메모리 시스템 및 그것의 동작 방법
KR100826500B1 (ko) * 2006-10-23 2008-05-02 삼성전자주식회사 비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 데이터 복구 방법
KR101403314B1 (ko) 2008-05-23 2014-06-05 삼성전자주식회사 메모리 장치 및 데이터 비트 저장 방법
KR101423052B1 (ko) * 2008-06-12 2014-07-25 삼성전자주식회사 메모리 장치 및 읽기 레벨 제어 방법
TW201212035A (en) * 2010-09-10 2012-03-16 Jmicron Technology Corp Access method of volatile memory and access apparatus of volatile memory
CN106571167B (zh) * 2016-11-09 2020-01-10 上海华虹集成电路有限责任公司 嵌入式eeprom的“读”测试基准建立方法
US10158380B2 (en) 2016-12-06 2018-12-18 Sandisk Technologies Llc ECC and read adjustment based on dynamic memory error model estimation
US10374639B2 (en) 2016-12-06 2019-08-06 Western Digital Technologies, Inc. Adaptive bit-flipping decoder based on dynamic error information
US10284233B2 (en) * 2016-12-06 2019-05-07 Western Digital Technologies, Inc. ECC adjustment based on dynamic error information
US11838127B2 (en) * 2022-03-11 2023-12-05 Hughes Network Systems, Llc Adaptive satellite communications

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US3623155A (en) * 1969-12-24 1971-11-23 Ibm Optimum apparatus and method for check bit generation and error detection, location and correction
JP3542002B2 (ja) * 1996-09-24 2004-07-14 株式会社ルネサステクノロジ システム
US6505305B1 (en) * 1998-07-16 2003-01-07 Compaq Information Technologies Group, L.P. Fail-over of multiple memory blocks in multiple memory modules in computer system
US6604222B1 (en) * 1999-04-30 2003-08-05 Rockwell Collins, Inc. Block code to efficiently correct adjacent data and/or check bit errors
WO2001076077A2 (fr) * 2000-03-31 2001-10-11 Ted Szymanski Emetteur, recepteur et schema de codage concus pour augmenter le debit de donnees et diminuer le taux d'erreur sur les bits d'une liaison de donnees optique
JP4250325B2 (ja) * 2000-11-01 2009-04-08 株式会社東芝 半導体記憶装置
US6691252B2 (en) * 2001-02-23 2004-02-10 Hewlett-Packard Development Company, L.P. Cache test sequence for single-ported row repair CAM
US6373758B1 (en) * 2001-02-23 2002-04-16 Hewlett-Packard Company System and method of operating a programmable column fail counter for redundancy allocation
US7036068B2 (en) * 2001-07-25 2006-04-25 Hewlett-Packard Development Company, L.P. Error correction coding and decoding in a solid-state storage device
US20030023922A1 (en) * 2001-07-25 2003-01-30 Davis James A. Fault tolerant magnetoresistive solid-state storage device
US6961890B2 (en) * 2001-08-16 2005-11-01 Hewlett-Packard Development Company, L.P. Dynamic variable-length error correction code
US7171594B2 (en) * 2002-03-06 2007-01-30 Hewlett-Packard Development Company, L.P. Pausing a transfer of data
US6829167B2 (en) * 2002-12-12 2004-12-07 Sandisk Corporation Error recovery for nonvolatile memory
JP4299558B2 (ja) * 2003-03-17 2009-07-22 株式会社ルネサステクノロジ 情報記憶装置および情報処理システム
JP2004288311A (ja) * 2003-03-24 2004-10-14 Toshiba Corp 半導体記憶装置及びその制御方法
US6868022B2 (en) * 2003-03-28 2005-03-15 Matrix Semiconductor, Inc. Redundant memory structure using bad bit pointers
US6704230B1 (en) * 2003-06-12 2004-03-09 International Business Machines Corporation Error detection and correction method and apparatus in a magnetoresistive random access memory
US6751147B1 (en) * 2003-08-05 2004-06-15 Hewlett-Packard Development Company, L.P. Method for adaptively writing a magnetic random access memory
US7006388B2 (en) * 2003-08-28 2006-02-28 Hewlett-Packard Development Company, L.P. Memory with reference-initiated sequential sensing
US7210077B2 (en) * 2004-01-29 2007-04-24 Hewlett-Packard Development Company, L.P. System and method for configuring a solid-state storage device with error correction coding

Also Published As

Publication number Publication date
US20060075320A1 (en) 2006-04-06
US7502985B2 (en) 2009-03-10
FR2875352A1 (fr) 2006-03-17

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Effective date: 20090529