JP4221064B2 - 銅層の電解析出方法 - Google Patents
銅層の電解析出方法 Download PDFInfo
- Publication number
- JP4221064B2 JP4221064B2 JP52618198A JP52618198A JP4221064B2 JP 4221064 B2 JP4221064 B2 JP 4221064B2 JP 52618198 A JP52618198 A JP 52618198A JP 52618198 A JP52618198 A JP 52618198A JP 4221064 B2 JP4221064 B2 JP 4221064B2
- Authority
- JP
- Japan
- Prior art keywords
- bath
- copper
- deposition
- copper layer
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 239000010949 copper Substances 0.000 title claims abstract description 68
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004070 electrodeposition Methods 0.000 title 1
- 230000008021 deposition Effects 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 16
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 3
- 239000011877 solvent mixture Substances 0.000 claims abstract description 3
- 230000002441 reversible effect Effects 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims description 28
- 238000001556 precipitation Methods 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 150000002898 organic sulfur compounds Chemical class 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000000654 additive Substances 0.000 abstract description 10
- 230000000007 visual effect Effects 0.000 abstract description 3
- 239000003788 bath preparation Substances 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 20
- -1 iron (III) ions Chemical class 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000005219 brazing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000009863 impact test Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N iron (II) ion Substances [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 3
- 150000002506 iron compounds Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical class [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- HQPMOXUTKURVDV-UHFFFAOYSA-L iron(2+);sulfate;pentahydrate Chemical compound O.O.O.O.O.[Fe+2].[O-]S([O-])(=O)=O HQPMOXUTKURVDV-UHFFFAOYSA-L 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000006259 organic additive Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- OBDVFOBWBHMJDG-UHFFFAOYSA-N 3-mercapto-1-propanesulfonic acid Chemical compound OS(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- IPCRBOOJBPETMF-UHFFFAOYSA-N N-acetylthiourea Chemical compound CC(=O)NC(N)=S IPCRBOOJBPETMF-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 241001424397 Paralucia pyrodiscus Species 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- VZCYOOQTPOCHFL-OWOJBTEDSA-L fumarate(2-) Chemical compound [O-]C(=O)\C=C\C([O-])=O VZCYOOQTPOCHFL-OWOJBTEDSA-L 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- NQXWGWZJXJUMQB-UHFFFAOYSA-K iron trichloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].Cl[Fe+]Cl NQXWGWZJXJUMQB-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010525 oxidative degradation reaction Methods 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrolytic Production Of Metals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19653681A DE19653681C2 (de) | 1996-12-13 | 1996-12-13 | Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens |
| DE19653681.2 | 1996-12-13 | ||
| PCT/EP1997/006786 WO1998026114A1 (de) | 1996-12-13 | 1997-12-04 | Verfahren zur elektrolytischen abscheidung von kupferschichten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001505955A JP2001505955A (ja) | 2001-05-08 |
| JP2001505955A5 JP2001505955A5 (enExample) | 2005-05-12 |
| JP4221064B2 true JP4221064B2 (ja) | 2009-02-12 |
Family
ID=7815786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52618198A Expired - Lifetime JP4221064B2 (ja) | 1996-12-13 | 1997-12-04 | 銅層の電解析出方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6129830A (enExample) |
| EP (1) | EP0944749B1 (enExample) |
| JP (1) | JP4221064B2 (enExample) |
| KR (1) | KR100546989B1 (enExample) |
| AT (1) | ATE204035T1 (enExample) |
| CA (1) | CA2275214C (enExample) |
| DE (2) | DE19653681C2 (enExample) |
| WO (1) | WO1998026114A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19915146C1 (de) * | 1999-01-21 | 2000-07-06 | Atotech Deutschland Gmbh | Verfahren zum galvanischen Bilden von Leiterstrukturen aus hochreinem Kupfer bei der Herstellung von integrierten Schaltungen |
| JP4394234B2 (ja) * | 2000-01-20 | 2010-01-06 | 日鉱金属株式会社 | 銅電気めっき液及び銅電気めっき方法 |
| US6503375B1 (en) * | 2000-02-11 | 2003-01-07 | Applied Materials, Inc | Electroplating apparatus using a perforated phosphorus doped consumable anode |
| JP2001267726A (ja) * | 2000-03-22 | 2001-09-28 | Toyota Autom Loom Works Ltd | 配線基板の電解メッキ方法及び配線基板の電解メッキ装置 |
| US6491806B1 (en) * | 2000-04-27 | 2002-12-10 | Intel Corporation | Electroplating bath composition |
| US6776893B1 (en) * | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
| JP4806498B2 (ja) * | 2001-08-01 | 2011-11-02 | 凸版印刷株式会社 | プリント配線基板の製造装置および製造方法 |
| EP1310582A1 (en) * | 2001-11-07 | 2003-05-14 | Shipley Company LLC | Process for electrolytic copper plating |
| US8002962B2 (en) | 2002-03-05 | 2011-08-23 | Enthone Inc. | Copper electrodeposition in microelectronics |
| US7316772B2 (en) * | 2002-03-05 | 2008-01-08 | Enthone Inc. | Defect reduction in electrodeposited copper for semiconductor applications |
| DE10259362A1 (de) * | 2002-12-18 | 2004-07-08 | Siemens Ag | Verfahren zum Abscheiden einer Legierung auf ein Substrat |
| KR20040073974A (ko) * | 2003-02-14 | 2004-08-21 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. | 전기도금 조성물 |
| DE602005022650D1 (de) * | 2004-04-26 | 2010-09-16 | Rohm & Haas Elect Mat | Verbessertes Plattierungsverfahren |
| TW200632147A (enExample) * | 2004-11-12 | 2006-09-16 | ||
| EP1717351A1 (de) * | 2005-04-27 | 2006-11-02 | Enthone Inc. | Galvanikbad |
| US20070158199A1 (en) * | 2005-12-30 | 2007-07-12 | Haight Scott M | Method to modulate the surface roughness of a plated deposit and create fine-grained flat bumps |
| US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
| KR101335480B1 (ko) * | 2006-03-30 | 2013-12-02 | 아토테크 도이칠란드 게엠베하 | 홀 및 캐비티를 금속으로 충전하기 위한 전기분해 방법 |
| US7887693B2 (en) * | 2007-06-22 | 2011-02-15 | Maria Nikolova | Acid copper electroplating bath composition |
| US7905994B2 (en) | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
| JP2009167506A (ja) * | 2008-01-21 | 2009-07-30 | Ebara Udylite Kk | 酸性電解銅めっき液およびこれを用いる微細配線回路の作製方法 |
| DE102008031003B4 (de) | 2008-06-30 | 2010-04-15 | Siemens Aktiengesellschaft | Verfahren zum Erzeugen einer CNT enthaltenen Schicht aus einer ionischen Flüssigkeit |
| US20100206737A1 (en) * | 2009-02-17 | 2010-08-19 | Preisser Robert F | Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) |
| US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
| EP2392694A1 (en) * | 2010-06-02 | 2011-12-07 | ATOTECH Deutschland GmbH | Method for etching of copper and copper alloys |
| EP2518187A1 (en) | 2011-04-26 | 2012-10-31 | Atotech Deutschland GmbH | Aqueous acidic bath for electrolytic deposition of copper |
| EP2620529B1 (en) * | 2012-01-25 | 2014-04-30 | Atotech Deutschland GmbH | Method for producing matt copper deposits |
| JP6216522B2 (ja) * | 2013-03-14 | 2017-10-18 | 大日本印刷株式会社 | インターポーザー基板の製造方法。 |
| ES2733771T3 (es) * | 2016-05-19 | 2019-12-02 | Atotech Deutschland Gmbh | Método para monitorizar la cantidad total de abrillantadores presentes en un baño de recubrimiento ácido de cobre o de una aleación de cobre y proceso controlado para el recubrimiento |
| JP6909582B2 (ja) * | 2017-01-18 | 2021-07-28 | 株式会社Ｊｃｕ | 着色用めっき液および着色方法 |
| KR20210062369A (ko) * | 2019-11-21 | 2021-05-31 | 에스케이넥실리스 주식회사 | 찢김 또는 주름 불량을 방지할 수 있는 전해동박, 그것을 포함하는 전극, 그것을 포함하는 이차전지, 및 그것의 제조방법 |
| TW202342827A (zh) * | 2022-03-31 | 2023-11-01 | 日商奧野製藥工業股份有限公司 | Pr脈衝電解用銅鍍敷液、及利用pr脈衝電解法之銅鍍敷方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB662217A (en) * | 1948-10-13 | 1951-12-05 | Westinghouse Electric Int Co | Improvements in or relating to the electrodeposition of copper |
| DD215589B5 (de) * | 1983-05-11 | 1994-06-01 | Heinz Dr Rer Nat Liebscher | Verfahren zur elektrolytischen Metallabscheidung bei erzwungener Konvektion |
| DD261613A1 (de) * | 1987-06-05 | 1988-11-02 | Leipzig Galvanotechnik | Verfahren zur elektrolytischen kupferabscheidung aus sauren elektrolyten mit dimensionsstabiler anode |
| GB8801827D0 (en) * | 1988-01-27 | 1988-02-24 | Jct Controls Ltd | Improvements in electrochemical processes |
| CN1045770A (zh) * | 1989-03-18 | 1990-10-03 | 王英 | 用膜法蒸馏技术分离浓缩醋酸铵与氢氧化铵的系统 |
| GB8913561D0 (en) * | 1989-06-13 | 1989-08-02 | Learonal Uk Plc | Method of stabilising an organic additive in an electroplating solution |
| DE4344387C2 (de) * | 1993-12-24 | 1996-09-05 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens |
| JP2866300B2 (ja) * | 1994-03-07 | 1999-03-08 | 生物系特定産業技術研究推進機構 | 運搬作業車 |
| JPH0967693A (ja) * | 1995-08-29 | 1997-03-11 | Nikko Gould Foil Kk | 電解銅箔の製造方法 |
-
1996
- 1996-12-13 DE DE19653681A patent/DE19653681C2/de not_active Expired - Fee Related
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1997
- 1997-12-04 KR KR1019997004258A patent/KR100546989B1/ko not_active Expired - Lifetime
- 1997-12-04 EP EP97952879A patent/EP0944749B1/de not_active Expired - Lifetime
- 1997-12-04 DE DE59704260T patent/DE59704260D1/de not_active Expired - Lifetime
- 1997-12-04 WO PCT/EP1997/006786 patent/WO1998026114A1/de not_active Ceased
- 1997-12-04 CA CA002275214A patent/CA2275214C/en not_active Expired - Fee Related
- 1997-12-04 US US09/319,423 patent/US6129830A/en not_active Expired - Lifetime
- 1997-12-04 AT AT97952879T patent/ATE204035T1/de active
- 1997-12-04 JP JP52618198A patent/JP4221064B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA2275214C (en) | 2007-10-02 |
| KR20000053278A (ko) | 2000-08-25 |
| US6129830A (en) | 2000-10-10 |
| DE59704260D1 (de) | 2001-09-13 |
| EP0944749A1 (de) | 1999-09-29 |
| JP2001505955A (ja) | 2001-05-08 |
| WO1998026114A1 (de) | 1998-06-18 |
| EP0944749B1 (de) | 2001-08-08 |
| ATE204035T1 (de) | 2001-08-15 |
| CA2275214A1 (en) | 1998-06-18 |
| KR100546989B1 (ko) | 2006-01-26 |
| DE19653681C2 (de) | 2000-04-06 |
| DE19653681A1 (de) | 1998-06-18 |
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