JP4196675B2 - 保持装置、保持方法、露光装置、およびデバイス製造方法 - Google Patents

保持装置、保持方法、露光装置、およびデバイス製造方法 Download PDF

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Publication number
JP4196675B2
JP4196675B2 JP2002565351A JP2002565351A JP4196675B2 JP 4196675 B2 JP4196675 B2 JP 4196675B2 JP 2002565351 A JP2002565351 A JP 2002565351A JP 2002565351 A JP2002565351 A JP 2002565351A JP 4196675 B2 JP4196675 B2 JP 4196675B2
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JP
Japan
Prior art keywords
holding
suction
reticle
region
mask
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Expired - Fee Related
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JP2002565351A
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English (en)
Japanese (ja)
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JPWO2002065519A1 (ja
Inventor
恒幸 萩原
宏充 吉元
浩人 堀川
英夫 水谷
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Nikon Corp
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Nikon Corp
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Publication date
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Publication of JPWO2002065519A1 publication Critical patent/JPWO2002065519A1/ja
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Publication of JP4196675B2 publication Critical patent/JP4196675B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
JP2002565351A 2001-02-13 2002-02-13 保持装置、保持方法、露光装置、およびデバイス製造方法 Expired - Fee Related JP4196675B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001036130 2001-02-13
JP2001036130 2001-02-13
PCT/JP2002/001200 WO2002065519A1 (fr) 2001-02-13 2002-02-13 Dispositif de support, procede de support, dispositif d'exposition et procede de production des dispositifs

Publications (2)

Publication Number Publication Date
JPWO2002065519A1 JPWO2002065519A1 (ja) 2004-06-17
JP4196675B2 true JP4196675B2 (ja) 2008-12-17

Family

ID=18899450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002565351A Expired - Fee Related JP4196675B2 (ja) 2001-02-13 2002-02-13 保持装置、保持方法、露光装置、およびデバイス製造方法

Country Status (5)

Country Link
US (2) US7081946B2 (US20040100624A1-20040527-M00007.png)
JP (1) JP4196675B2 (US20040100624A1-20040527-M00007.png)
KR (1) KR100855527B1 (US20040100624A1-20040527-M00007.png)
CN (1) CN1507649A (US20040100624A1-20040527-M00007.png)
WO (1) WO2002065519A1 (US20040100624A1-20040527-M00007.png)

Cited By (1)

* Cited by examiner, † Cited by third party
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US8610980B2 (en) 2007-06-29 2013-12-17 Canon Kabushiki Kaisha Table generating apparatus, table generating method, image processing apparatus, and image processing method

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US7239370B2 (en) * 2002-12-23 2007-07-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2004296939A (ja) * 2003-03-27 2004-10-21 Toshiba Corp 位置歪み補正装置、露光システム、露光方法及び位置歪み補正プログラム
NL1023717C2 (nl) * 2003-06-20 2004-12-21 Fei Co Preparaatdrager voor het dragen van een met een elektronenbundel te doorstralen preparaat.
JP4232018B2 (ja) * 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
TWI329779B (en) * 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
JP2005043836A (ja) * 2003-07-25 2005-02-17 Shin Etsu Chem Co Ltd フォトマスクブランク用基板の選定方法
JP4314462B2 (ja) * 2003-07-25 2009-08-19 信越化学工業株式会社 フォトマスクブランク用基板の製造方法
JP4411100B2 (ja) * 2004-02-18 2010-02-10 キヤノン株式会社 露光装置
JP4411158B2 (ja) * 2004-07-29 2010-02-10 キヤノン株式会社 露光装置
US7196775B2 (en) * 2004-08-23 2007-03-27 Asml Holding N.V. Patterned mask holding device and method using two holding systems
JP4803576B2 (ja) * 2004-09-29 2011-10-26 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランク、露光用マスク、半導体デバイスの製造方法、及びマスクブランク用基板の製造方法
DE102005046135B4 (de) * 2004-09-29 2017-04-13 Hoya Corp. Substrat für Maskenrohling, Maskenrohling, Belichtungsmaske und Herstellungsverfahren für Maskenrohlingssubstrat
JP2006261156A (ja) * 2005-03-15 2006-09-28 Canon Inc 原版保持装置およびそれを用いた露光装置
TWI408506B (zh) * 2005-03-29 2013-09-11 尼康股份有限公司 曝光裝置、曝光裝置的製造方法以及微元件的製造方法
WO2006133800A1 (en) 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
KR100819556B1 (ko) * 2006-02-20 2008-04-07 삼성전자주식회사 웨이퍼 스테이지, 이를 갖는 노광설비 및 이를 사용한 웨이퍼 평평도 보정 방법
US20070268476A1 (en) * 2006-05-19 2007-11-22 Nikon Corporation Kinematic chucks for reticles and other planar bodies
US7675607B2 (en) * 2006-07-14 2010-03-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2009136697A2 (ko) * 2008-05-07 2009-11-12 엘지전자(주) 기록매체의 틸트 조정방법 및 조정장치
US8159654B2 (en) * 2009-06-03 2012-04-17 Matsushita Seiki Co., Ltd. Pressure body and pellicle mounting apparatus
NL2006536A (en) * 2010-05-13 2011-11-15 Asml Netherlands Bv A substrate table, a lithographic apparatus, a method of flattening an edge of a substrate and a device manufacturing method.
NL2006565A (en) 2010-06-30 2012-01-02 Asml Holding Nv Reticle clamping system.
US9746787B2 (en) * 2011-02-22 2017-08-29 Nikon Corporation Holding apparatus, exposure apparatus and manufacturing method of device
CN113035768A (zh) 2012-11-30 2021-06-25 株式会社尼康 搬送系统
KR102502727B1 (ko) * 2015-11-09 2023-02-23 삼성전자주식회사 레티클 및 그를 포함하는 노광 장치
CN105826211B (zh) * 2016-05-11 2018-10-19 苏州日月新半导体有限公司 半导体产品、制造该半导体产品的治具及方法
KR20190116413A (ko) 2017-02-10 2019-10-14 에이에스엠엘 홀딩 엔.브이. 레티클 클램핑 디바이스
JP7419030B2 (ja) * 2019-11-18 2024-01-22 キヤノン株式会社 保持装置、露光装置、及び物品の製造方法

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NL8300220A (nl) * 1983-01-21 1984-08-16 Philips Nv Inrichting voor het stralingslithografisch behandelen van een dun substraat.
JPH04289864A (ja) * 1991-03-19 1992-10-14 Fujitsu Ltd レチクルステージ
JPH0851143A (ja) * 1992-07-20 1996-02-20 Nikon Corp 基板保持装置
JPH06244269A (ja) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
JPH0758191A (ja) * 1993-08-13 1995-03-03 Toshiba Corp ウェハステージ装置
JPH0982606A (ja) * 1995-09-13 1997-03-28 Nikon Corp レチクルホルダ
JP3524295B2 (ja) * 1996-09-24 2004-05-10 キヤノン株式会社 走査型露光装置およびデバイス製造方法
JPH1140657A (ja) * 1997-07-23 1999-02-12 Nikon Corp 試料保持装置および走査型露光装置
JPH11135412A (ja) * 1997-10-28 1999-05-21 Nikon Corp 投影露光装置及びレチクル保持方法
EP1031877A4 (en) * 1997-11-11 2001-05-09 Nikon Corp PHOTOMASK, ABERRATION CORRECTION PLATE, AND EXPOSURE DEVICE AND METHOD FOR PRODUCING A MICROSTRUCTURE
US6032997A (en) * 1998-04-16 2000-03-07 Excimer Laser Systems Vacuum chuck
KR20010009997A (ko) * 1999-07-15 2001-02-05 김영환 레티클 스테이지
US6537844B1 (en) * 2001-05-31 2003-03-25 Kabushiki Kaisha Toshiba Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610980B2 (en) 2007-06-29 2013-12-17 Canon Kabushiki Kaisha Table generating apparatus, table generating method, image processing apparatus, and image processing method

Also Published As

Publication number Publication date
CN1507649A (zh) 2004-06-23
KR100855527B1 (ko) 2008-09-01
WO2002065519A1 (fr) 2002-08-22
KR20040007448A (ko) 2004-01-24
US20040100624A1 (en) 2004-05-27
US20060146312A1 (en) 2006-07-06
US7081946B2 (en) 2006-07-25
JPWO2002065519A1 (ja) 2004-06-17

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