JP4144726B2 - 架橋形成ポジ型ホトレジスト組成物 - Google Patents
架橋形成ポジ型ホトレジスト組成物 Download PDFInfo
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- JP4144726B2 JP4144726B2 JP2000250175A JP2000250175A JP4144726B2 JP 4144726 B2 JP4144726 B2 JP 4144726B2 JP 2000250175 A JP2000250175 A JP 2000250175A JP 2000250175 A JP2000250175 A JP 2000250175A JP 4144726 B2 JP4144726 B2 JP 4144726B2
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- 229940116333 ethyl lactate Drugs 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- ZZJNLOGMYQURDL-UHFFFAOYSA-M trifluoromethanesulfonate;tris(4-methylphenyl)sulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(C)=CC=C1[S+](C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZZJNLOGMYQURDL-UHFFFAOYSA-M 0.000 description 1
- RKBCYCFRFCNLTO-UHFFFAOYSA-N triisopropylamine Chemical compound CC(C)N(C(C)C)C(C)C RKBCYCFRFCNLTO-UHFFFAOYSA-N 0.000 description 1
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- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
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- Materials For Photolithography (AREA)
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000250175A JP4144726B2 (ja) | 2000-08-21 | 2000-08-21 | 架橋形成ポジ型ホトレジスト組成物 |
| AT01306923T ATE486301T1 (de) | 2000-08-21 | 2001-08-14 | Vernetzte, positiv arbeitende photoresist- zusammensetzung |
| US09/928,399 US6630282B2 (en) | 2000-08-21 | 2001-08-14 | Crosslinked positive-working photoresist composition |
| EP01306923A EP1182506B1 (en) | 2000-08-21 | 2001-08-14 | Crosslinked positive-working photoresist composition |
| DE60143334T DE60143334D1 (de) | 2000-08-21 | 2001-08-14 | Vernetzte, positiv arbeitende Photoresist-Zusammensetzung |
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| JP2000250175A JP4144726B2 (ja) | 2000-08-21 | 2000-08-21 | 架橋形成ポジ型ホトレジスト組成物 |
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| JP2002062656A JP2002062656A (ja) | 2002-02-28 |
| JP2002062656A5 JP2002062656A5 (enExample) | 2006-11-09 |
| JP4144726B2 true JP4144726B2 (ja) | 2008-09-03 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2004059392A1 (ja) | 2002-12-26 | 2004-07-15 | Tokyo Ohka Kogyo Co., Ltd. | ポジ型レジスト組成物およびレジストパターン形成方法 |
| JP2004333548A (ja) | 2003-04-30 | 2004-11-25 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物およびレジストパターン形成方法 |
| KR100813458B1 (ko) * | 2003-05-20 | 2008-03-13 | 도오꾜오까고오교 가부시끼가이샤 | 화학증폭형 포지티브형 포토레지스트 조성물 및 레지스트패턴형성방법 |
| TWI465467B (zh) * | 2004-03-08 | 2014-12-21 | 三菱麗陽股份有限公司 | 光阻用聚合物、光阻組成物及圖案製造方法與光阻用聚合物用原料化合物 |
| JP4979477B2 (ja) * | 2004-03-08 | 2012-07-18 | 三菱レイヨン株式会社 | レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物 |
| JP4694153B2 (ja) * | 2004-04-13 | 2011-06-08 | 東京応化工業株式会社 | 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法 |
| KR100848031B1 (ko) * | 2004-04-13 | 2008-07-23 | 도오꾜오까고오교 가부시끼가이샤 | 고분자 화합물, 이 고분자 화합물을 함유하는 포토레지스트조성물, 및 레지스트 패턴 형성 방법 |
| KR100833839B1 (ko) * | 2004-07-01 | 2008-06-02 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
| JP4198648B2 (ja) * | 2004-07-01 | 2008-12-17 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| JP4767552B2 (ja) * | 2005-02-21 | 2011-09-07 | 日本曹達株式会社 | フェノール系スターポリマー |
| JP4536546B2 (ja) * | 2005-02-21 | 2010-09-01 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
| JP4756925B2 (ja) * | 2005-06-15 | 2011-08-24 | 関西ペイント株式会社 | 不飽和化合物、硬化性不飽和組成物、それを用いた硬化物及びその硬化物の除去方法 |
| JP4715671B2 (ja) * | 2005-08-03 | 2011-07-06 | Ｊｓｒ株式会社 | メッキ造形物製造用ポジ型感放射線性樹脂組成物、転写フィルムおよびメッキ造形物の製造方法 |
| JP4851140B2 (ja) * | 2005-08-09 | 2012-01-11 | 三菱レイヨン株式会社 | （メタ）アクリル酸エステル、重合体、レジスト組成物、およびパターンが形成された基板の製造方法 |
| US7497789B2 (en) | 2006-10-25 | 2009-03-03 | Acushnet Company | Metal wood club with improved moment of inertia |
| US8715918B2 (en) | 2007-09-25 | 2014-05-06 | Az Electronic Materials Usa Corp. | Thick film resists |
| CN109844641B (zh) | 2016-08-09 | 2022-10-11 | 默克专利有限公司 | 环境稳定的厚膜的化学放大抗蚀剂 |
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