JP4106811B2 - 半導体記憶装置及び電子装置 - Google Patents

半導体記憶装置及び電子装置 Download PDF

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Publication number
JP4106811B2
JP4106811B2 JP16346199A JP16346199A JP4106811B2 JP 4106811 B2 JP4106811 B2 JP 4106811B2 JP 16346199 A JP16346199 A JP 16346199A JP 16346199 A JP16346199 A JP 16346199A JP 4106811 B2 JP4106811 B2 JP 4106811B2
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Japan
Prior art keywords
refresh
signal
output
semiconductor memory
memory device
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Expired - Fee Related
Application number
JP16346199A
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English (en)
Japanese (ja)
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JP2000353382A5 (cg-RX-API-DMAC7.html
JP2000353382A (ja
Inventor
明裕 舩生
伸也 藤岡
仁史 池田
孝章 鈴木
眞男 田口
公昭 佐藤
光徳 佐藤
康郎 松崎
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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16346199A priority Critical patent/JP4106811B2/ja
Priority to US09/536,988 priority patent/US6535950B1/en
Priority to DE60043326T priority patent/DE60043326D1/de
Priority to EP00302717A priority patent/EP1061523B1/en
Priority to TW089107437A priority patent/TW468184B/zh
Priority to KR1020000020942A priority patent/KR100607918B1/ko
Publication of JP2000353382A publication Critical patent/JP2000353382A/ja
Priority to US10/352,985 priority patent/US6724675B2/en
Publication of JP2000353382A5 publication Critical patent/JP2000353382A5/ja
Priority to KR1020060037623A priority patent/KR100609677B1/ko
Application granted granted Critical
Publication of JP4106811B2 publication Critical patent/JP4106811B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/109—Control signal input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Memory System (AREA)
JP16346199A 1999-06-10 1999-06-10 半導体記憶装置及び電子装置 Expired - Fee Related JP4106811B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP16346199A JP4106811B2 (ja) 1999-06-10 1999-06-10 半導体記憶装置及び電子装置
US09/536,988 US6535950B1 (en) 1999-06-10 2000-03-29 Semiconductor memory device having a refresh operation
EP00302717A EP1061523B1 (en) 1999-06-10 2000-03-31 Semiconductor memory device and electronic apparatus
DE60043326T DE60043326D1 (de) 1999-06-10 2000-03-31 Halbleiterspeicheranordnung und elektronisches Gerät
TW089107437A TW468184B (en) 1999-06-10 2000-04-20 Semiconductor memory device and electronic apparatus
KR1020000020942A KR100607918B1 (ko) 1999-06-10 2000-04-20 반도체 기억 장치 및 전자 장치
US10/352,985 US6724675B2 (en) 1999-06-10 2003-01-29 Semiconductor memory device and electronic apparatus
KR1020060037623A KR100609677B1 (ko) 1999-06-10 2006-04-26 반도체 기억 장치 및 전자 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16346199A JP4106811B2 (ja) 1999-06-10 1999-06-10 半導体記憶装置及び電子装置

Publications (3)

Publication Number Publication Date
JP2000353382A JP2000353382A (ja) 2000-12-19
JP2000353382A5 JP2000353382A5 (cg-RX-API-DMAC7.html) 2004-12-09
JP4106811B2 true JP4106811B2 (ja) 2008-06-25

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JP16346199A Expired - Fee Related JP4106811B2 (ja) 1999-06-10 1999-06-10 半導体記憶装置及び電子装置

Country Status (6)

Country Link
US (2) US6535950B1 (cg-RX-API-DMAC7.html)
EP (1) EP1061523B1 (cg-RX-API-DMAC7.html)
JP (1) JP4106811B2 (cg-RX-API-DMAC7.html)
KR (2) KR100607918B1 (cg-RX-API-DMAC7.html)
DE (1) DE60043326D1 (cg-RX-API-DMAC7.html)
TW (1) TW468184B (cg-RX-API-DMAC7.html)

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EP1061523A1 (en) 2000-12-20
KR100609677B1 (ko) 2006-08-08
KR100607918B1 (ko) 2006-08-04
US6535950B1 (en) 2003-03-18
KR20060080559A (ko) 2006-07-10
KR20010006998A (ko) 2001-01-26
JP2000353382A (ja) 2000-12-19
US6724675B2 (en) 2004-04-20
TW468184B (en) 2001-12-11
EP1061523B1 (en) 2009-11-18
DE60043326D1 (de) 2009-12-31

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