JP4095731B2 - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置 Download PDFInfo
- Publication number
- JP4095731B2 JP4095731B2 JP31723398A JP31723398A JP4095731B2 JP 4095731 B2 JP4095731 B2 JP 4095731B2 JP 31723398 A JP31723398 A JP 31723398A JP 31723398 A JP31723398 A JP 31723398A JP 4095731 B2 JP4095731 B2 JP 4095731B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- metal layer
- abrasive
- acid
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Semiconductor Memories (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31723398A JP4095731B2 (ja) | 1998-11-09 | 1998-11-09 | 半導体装置の製造方法及び半導体装置 |
| US09/361,989 US6326299B1 (en) | 1998-11-09 | 1999-07-28 | Method for manufacturing a semiconductor device |
| TW088117081A TW452877B (en) | 1998-11-09 | 1999-10-04 | Semiconductor device and manufacture thereof |
| KR1019990049144A KR100653797B1 (ko) | 1998-11-09 | 1999-11-08 | 반도체 장치의 제조 방법 |
| US09/978,068 US20020025605A1 (en) | 1998-11-09 | 2001-10-17 | Semiconductor device and method for manufacturing the same |
| US10/227,284 US6638854B2 (en) | 1998-11-09 | 2002-08-26 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31723398A JP4095731B2 (ja) | 1998-11-09 | 1998-11-09 | 半導体装置の製造方法及び半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000150435A JP2000150435A (ja) | 2000-05-30 |
| JP2000150435A5 JP2000150435A5 (https=) | 2005-04-07 |
| JP4095731B2 true JP4095731B2 (ja) | 2008-06-04 |
Family
ID=18085974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31723398A Expired - Lifetime JP4095731B2 (ja) | 1998-11-09 | 1998-11-09 | 半導体装置の製造方法及び半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6326299B1 (https=) |
| JP (1) | JP4095731B2 (https=) |
| KR (1) | KR100653797B1 (https=) |
| TW (1) | TW452877B (https=) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1137056B1 (en) | 1998-08-31 | 2013-07-31 | Hitachi Chemical Company, Ltd. | Abrasive liquid for metal and method for polishing |
| US6936531B2 (en) | 1998-12-21 | 2005-08-30 | Megic Corporation | Process of fabricating a chip structure |
| KR100797218B1 (ko) * | 1998-12-25 | 2008-01-23 | 히다치 가세고교 가부시끼가이샤 | Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법 |
| JP2000311876A (ja) * | 1999-04-27 | 2000-11-07 | Hitachi Ltd | 配線基板の製造方法および製造装置 |
| JP3760064B2 (ja) * | 1999-08-09 | 2006-03-29 | 株式会社日立製作所 | 半導体装置の製造方法及び半導体装置の平坦化加工装置 |
| JP4554011B2 (ja) * | 1999-08-10 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| TW501197B (en) * | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
| US6635943B1 (en) * | 1999-11-30 | 2003-10-21 | Advanced Micro Devices, Inc. | Method and system for reducing charge gain and charge loss in interlayer dielectric formation |
| JP2001185651A (ja) * | 1999-12-27 | 2001-07-06 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
| KR20010076353A (ko) * | 2000-01-18 | 2001-08-11 | 조셉 제이. 스위니 | 2단계 화학 기계적 연마공정의 광학적 모니터링 방법 |
| JP2001345297A (ja) * | 2000-05-30 | 2001-12-14 | Hitachi Ltd | 半導体集積回路装置の製造方法及び研磨装置 |
| JP2002050595A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
| US6605537B2 (en) | 2000-10-27 | 2003-08-12 | Rodel Holdings, Inc. | Polishing of metal substrates |
| US20020042199A1 (en) * | 2000-09-20 | 2002-04-11 | Jinru Bian | Polishing by CMP for optimized planarization |
| US6936541B2 (en) * | 2000-09-20 | 2005-08-30 | Rohn And Haas Electronic Materials Cmp Holdings, Inc. | Method for planarizing metal interconnects |
| US6649523B2 (en) * | 2000-09-29 | 2003-11-18 | Nutool, Inc. | Method and system to provide material removal and planarization employing a reactive pad |
| JP2002151451A (ja) * | 2000-11-14 | 2002-05-24 | Jsr Corp | 研磨速度比の調整方法ならびに化学機械研磨用水系分散体およびこの化学機械研磨用水系分散体を用いた半導体装置の製造方法 |
| US6478659B2 (en) * | 2000-12-13 | 2002-11-12 | Promos Technologies, Inc. | Chemical mechanical polishing method for slurry free fixed abrasive pads |
| US6566242B1 (en) * | 2001-03-23 | 2003-05-20 | International Business Machines Corporation | Dual damascene copper interconnect to a damascene tungsten wiring level |
| US6632259B2 (en) * | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| JP2002367996A (ja) * | 2001-06-06 | 2002-12-20 | Nec Corp | 半導体装置の製造方法 |
| JP2002368084A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
| JP2003051481A (ja) * | 2001-08-07 | 2003-02-21 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP2003077921A (ja) * | 2001-09-04 | 2003-03-14 | Nec Corp | 半導体装置の製造方法 |
| US7932603B2 (en) | 2001-12-13 | 2011-04-26 | Megica Corporation | Chip structure and process for forming the same |
| WO2003071592A1 (en) * | 2002-02-20 | 2003-08-28 | Ebara Corporation | Method and device for polishing |
| TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| JP2004039867A (ja) * | 2002-07-03 | 2004-02-05 | Sony Corp | 多層配線回路モジュール及びその製造方法 |
| AU2003255986A1 (en) * | 2002-09-13 | 2004-04-30 | Koninklijke Philips Electronics N.V. | Manufacturing an ic |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| JP4267331B2 (ja) * | 2003-01-14 | 2009-05-27 | 株式会社荏原製作所 | 基板の処理方法及びエッチング液 |
| US6756309B1 (en) * | 2003-01-30 | 2004-06-29 | Taiwan Semiconductor Manufacturing Co., Ltd | Feed forward process control method for adjusting metal line Rs |
| US7709387B2 (en) * | 2003-02-11 | 2010-05-04 | Nxp B.V. | Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US7300480B2 (en) | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
| US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
| US20050097825A1 (en) * | 2003-11-06 | 2005-05-12 | Jinru Bian | Compositions and methods for a barrier removal |
| US7497967B2 (en) * | 2004-03-24 | 2009-03-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Compositions and methods for polishing copper |
| US7303993B2 (en) * | 2004-07-01 | 2007-12-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| US7384871B2 (en) * | 2004-07-01 | 2008-06-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| KR100672940B1 (ko) | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
| JP2006049912A (ja) * | 2004-08-03 | 2006-02-16 | Samsung Electronics Co Ltd | Cmpスラリー、前記cmpスラリーを使用する化学機械的研磨方法、及び前記cmpスラリーを使用する金属配線の形成方法 |
| JP2006066851A (ja) * | 2004-08-30 | 2006-03-09 | Matsumura Sekiyu Kenkyusho:Kk | 化学的機械研磨用組成物 |
| CN101044602A (zh) * | 2004-09-17 | 2007-09-26 | Fsi国际公司 | 使用臭氧处理类晶片物体 |
| US7435356B2 (en) * | 2004-11-24 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Abrasive-free chemical mechanical polishing compositions and methods relating thereto |
| US7086935B2 (en) * | 2004-11-24 | 2006-08-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cellulose-containing polishing compositions and methods relating thereto |
| WO2006116770A2 (en) * | 2005-04-28 | 2006-11-02 | Advanced Technology Materials, Inc. | Method of passivating chemical mechanical polishing compositions for copper film planarization processes |
| JP2007066990A (ja) * | 2005-08-29 | 2007-03-15 | Fujifilm Holdings Corp | 研磨液及びそれを用いる研磨方法 |
| US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
| FR2900587B1 (fr) * | 2006-05-02 | 2008-12-26 | Kemesys | Procede de polissage mecano-chimique (cmp) en continu d'un materiau multicouche |
| US20080152812A1 (en) * | 2006-12-22 | 2008-06-26 | Ming Fang | Methods of corrosion prevention and cleaning of copper structures |
| US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| JP5115573B2 (ja) * | 2010-03-03 | 2013-01-09 | オムロン株式会社 | 接続用パッドの製造方法 |
| US8575000B2 (en) * | 2011-07-19 | 2013-11-05 | SanDisk Technologies, Inc. | Copper interconnects separated by air gaps and method of making thereof |
| US9099396B2 (en) * | 2011-11-08 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-passivation interconnect structure and method of forming the same |
| KR20150013508A (ko) * | 2012-04-26 | 2015-02-05 | 도레이 카부시키가이샤 | 요철 구조를 갖는 결정 기판의 제조 방법 |
| KR101965256B1 (ko) * | 2012-10-17 | 2019-04-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| US9962801B2 (en) * | 2014-01-07 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for performing chemical mechanical planarization |
| JP6321579B2 (ja) * | 2015-06-01 | 2018-05-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム |
| JP2019165088A (ja) | 2018-03-19 | 2019-09-26 | 東芝メモリ株式会社 | 半導体装置およびその製造方法 |
| JP2020017668A (ja) * | 2018-07-26 | 2020-01-30 | キオクシア株式会社 | 半導体装置の製造方法 |
| US10692732B2 (en) * | 2018-09-21 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP slurry and CMP method |
| CN116811043B (zh) * | 2023-07-05 | 2026-02-27 | 北京晶格领域半导体有限公司 | 一种p型碳化硅晶片及其加工方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4944836A (en) | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| FR2630588A1 (fr) | 1988-04-22 | 1989-10-27 | Philips Nv | Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee |
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| JP2934353B2 (ja) * | 1992-06-24 | 1999-08-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5397741A (en) * | 1993-03-29 | 1995-03-14 | International Business Machines Corporation | Process for metallized vias in polyimide |
| US5380546A (en) * | 1993-06-09 | 1995-01-10 | Microelectronics And Computer Technology Corporation | Multilevel metallization process for electronic components |
| JP3297220B2 (ja) | 1993-10-29 | 2002-07-02 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
| JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| JP3487051B2 (ja) | 1995-12-15 | 2004-01-13 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6100196A (en) * | 1996-04-08 | 2000-08-08 | Chartered Semiconductor Manufacturing Ltd. | Method of making a copper interconnect with top barrier layer |
| JP3304754B2 (ja) | 1996-04-11 | 2002-07-22 | 三菱電機株式会社 | 集積回路の多段埋め込み配線構造 |
| US6093639A (en) * | 1996-10-30 | 2000-07-25 | United Microelectronics Corp. | Process for making contact plug |
| US5854140A (en) * | 1996-12-13 | 1998-12-29 | Siemens Aktiengesellschaft | Method of making an aluminum contact |
| KR100238220B1 (en) * | 1996-12-17 | 2000-01-15 | Samsung Electronics Co Ltd | Plattening method of semiconductor device |
| JP3160545B2 (ja) | 1997-01-28 | 2001-04-25 | 松下電器産業株式会社 | 埋め込み配線の形成方法 |
| TW319906B (en) * | 1997-06-02 | 1997-11-11 | Winbond Electronics Corp | Borderless via process |
| US6025264A (en) * | 1998-02-09 | 2000-02-15 | United Microelectronics Corp. | Fabricating method of a barrier layer |
| JP3374901B2 (ja) * | 1998-02-27 | 2003-02-10 | 日本電気株式会社 | 半導体装置 |
| US6143656A (en) * | 1998-10-22 | 2000-11-07 | Advanced Micro Devices, Inc. | Slurry for chemical mechanical polishing of copper |
| US6383928B1 (en) * | 1999-09-02 | 2002-05-07 | Texas Instruments Incorporated | Post copper CMP clean |
| US6350678B1 (en) * | 1999-09-17 | 2002-02-26 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing of semiconductors |
| US6380069B1 (en) * | 2000-01-14 | 2002-04-30 | United Microelectronics Corp. | Method of removing micro-scratch on metal layer |
| US6294472B1 (en) * | 2000-05-23 | 2001-09-25 | Advanced Micro Devices, Inc. | Dual slurry particle sizes for reducing microscratching of wafers |
| US6555477B1 (en) * | 2002-05-22 | 2003-04-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing Cu CMP corrosion |
-
1998
- 1998-11-09 JP JP31723398A patent/JP4095731B2/ja not_active Expired - Lifetime
-
1999
- 1999-07-28 US US09/361,989 patent/US6326299B1/en not_active Expired - Lifetime
- 1999-10-04 TW TW088117081A patent/TW452877B/zh active
- 1999-11-08 KR KR1019990049144A patent/KR100653797B1/ko not_active Expired - Fee Related
-
2001
- 2001-10-17 US US09/978,068 patent/US20020025605A1/en not_active Abandoned
-
2002
- 2002-08-26 US US10/227,284 patent/US6638854B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000035287A (ko) | 2000-06-26 |
| JP2000150435A (ja) | 2000-05-30 |
| KR100653797B1 (ko) | 2006-12-05 |
| US6638854B2 (en) | 2003-10-28 |
| US20030003713A1 (en) | 2003-01-02 |
| TW452877B (en) | 2001-09-01 |
| US20020025605A1 (en) | 2002-02-28 |
| US6326299B1 (en) | 2001-12-04 |
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