TW452877B - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof Download PDF

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Publication number
TW452877B
TW452877B TW088117081A TW88117081A TW452877B TW 452877 B TW452877 B TW 452877B TW 088117081 A TW088117081 A TW 088117081A TW 88117081 A TW88117081 A TW 88117081A TW 452877 B TW452877 B TW 452877B
Authority
TW
Taiwan
Prior art keywords
honing
conductive film
film
agent
manufacturing
Prior art date
Application number
TW088117081A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshio Homma
Seiichi Kondo
Noriyuki Sakuma
Naofumi Ohashi
Toshinori Imai
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW452877B publication Critical patent/TW452877B/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Semiconductor Memories (AREA)
TW088117081A 1998-11-09 1999-10-04 Semiconductor device and manufacture thereof TW452877B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31723398A JP4095731B2 (ja) 1998-11-09 1998-11-09 半導体装置の製造方法及び半導体装置

Publications (1)

Publication Number Publication Date
TW452877B true TW452877B (en) 2001-09-01

Family

ID=18085974

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088117081A TW452877B (en) 1998-11-09 1999-10-04 Semiconductor device and manufacture thereof

Country Status (4)

Country Link
US (3) US6326299B1 (https=)
JP (1) JP4095731B2 (https=)
KR (1) KR100653797B1 (https=)
TW (1) TW452877B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7906422B2 (en) 1998-12-21 2011-03-15 Megica Corporation Chip structure and process for forming the same
US7915734B2 (en) 2001-12-13 2011-03-29 Megica Corporation Chip structure and process for forming the same
TWI585846B (zh) * 2015-06-01 2017-06-01 日立國際電氣股份有限公司 A semiconductor device manufacturing method, a substrate processing system, a substrate processing apparatus, and a program

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JP4554011B2 (ja) * 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
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JP2001345297A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
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US6756309B1 (en) * 2003-01-30 2004-06-29 Taiwan Semiconductor Manufacturing Co., Ltd Feed forward process control method for adjusting metal line Rs
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US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
KR100672940B1 (ko) 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
JP2006049912A (ja) * 2004-08-03 2006-02-16 Samsung Electronics Co Ltd Cmpスラリー、前記cmpスラリーを使用する化学機械的研磨方法、及び前記cmpスラリーを使用する金属配線の形成方法
JP2006066851A (ja) * 2004-08-30 2006-03-09 Matsumura Sekiyu Kenkyusho:Kk 化学的機械研磨用組成物
CN101044602A (zh) * 2004-09-17 2007-09-26 Fsi国际公司 使用臭氧处理类晶片物体
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
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JP2007066990A (ja) * 2005-08-29 2007-03-15 Fujifilm Holdings Corp 研磨液及びそれを用いる研磨方法
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JP5115573B2 (ja) * 2010-03-03 2013-01-09 オムロン株式会社 接続用パッドの製造方法
US8575000B2 (en) * 2011-07-19 2013-11-05 SanDisk Technologies, Inc. Copper interconnects separated by air gaps and method of making thereof
US9099396B2 (en) * 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
KR20150013508A (ko) * 2012-04-26 2015-02-05 도레이 카부시키가이샤 요철 구조를 갖는 결정 기판의 제조 방법
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7906422B2 (en) 1998-12-21 2011-03-15 Megica Corporation Chip structure and process for forming the same
US7906849B2 (en) 1998-12-21 2011-03-15 Megica Corporation Chip structure and process for forming the same
US7915157B2 (en) 1998-12-21 2011-03-29 Megica Corporation Chip structure and process for forming the same
US7915734B2 (en) 2001-12-13 2011-03-29 Megica Corporation Chip structure and process for forming the same
US7919867B2 (en) 2001-12-13 2011-04-05 Megica Corporation Chip structure and process for forming the same
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
US8008776B2 (en) 2001-12-13 2011-08-30 Megica Corporation Chip structure and process for forming the same
US8546947B2 (en) 2001-12-13 2013-10-01 Megica Corporation Chip structure and process for forming the same
TWI585846B (zh) * 2015-06-01 2017-06-01 日立國際電氣股份有限公司 A semiconductor device manufacturing method, a substrate processing system, a substrate processing apparatus, and a program

Also Published As

Publication number Publication date
KR20000035287A (ko) 2000-06-26
JP2000150435A (ja) 2000-05-30
KR100653797B1 (ko) 2006-12-05
US6638854B2 (en) 2003-10-28
US20030003713A1 (en) 2003-01-02
JP4095731B2 (ja) 2008-06-04
US20020025605A1 (en) 2002-02-28
US6326299B1 (en) 2001-12-04

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