JP4056785B2 - Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶の製造装置 - Google Patents

Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶の製造装置 Download PDF

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Publication number
JP4056785B2
JP4056785B2 JP2002119442A JP2002119442A JP4056785B2 JP 4056785 B2 JP4056785 B2 JP 4056785B2 JP 2002119442 A JP2002119442 A JP 2002119442A JP 2002119442 A JP2002119442 A JP 2002119442A JP 4056785 B2 JP4056785 B2 JP 4056785B2
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group iii
alkali metal
iii nitride
mixed melt
nitride crystal
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JP2003313098A5 (enExample
JP2003313098A (ja
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正二 皿山
浩和 岩田
久典 山根
昌彦 島田
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Ricoh Co Ltd
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Ricoh Co Ltd
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JP2002119442A 2002-04-22 2002-04-22 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶の製造装置 Expired - Fee Related JP4056785B2 (ja)

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JP2002119442A JP4056785B2 (ja) 2002-04-22 2002-04-22 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶の製造装置

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JP2002119442A JP4056785B2 (ja) 2002-04-22 2002-04-22 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶の製造装置

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JP2003313098A5 JP2003313098A5 (enExample) 2006-06-22
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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4562398B2 (ja) * 2004-01-26 2010-10-13 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4722471B2 (ja) * 2004-12-15 2011-07-13 株式会社リコー Ｉｉｉ族窒化物結晶製造方法およびｉｉｉ族窒化物結晶成長装置
JP4615327B2 (ja) * 2005-02-03 2011-01-19 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
TW200706710A (en) * 2005-05-12 2007-02-16 Ricoh Co Ltd Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal
JP5516635B2 (ja) * 2005-05-12 2014-06-11 株式会社リコー Ｉｉｉ族窒化物結晶の製造装置
JP4878793B2 (ja) * 2005-08-10 2012-02-15 株式会社リコー 結晶成長装置および製造方法
JP4878794B2 (ja) * 2005-08-10 2012-02-15 株式会社リコー 結晶成長装置および製造方法
JP4192220B2 (ja) 2005-08-10 2008-12-10 株式会社リコー 結晶成長装置および製造方法
JP4732146B2 (ja) * 2005-11-21 2011-07-27 株式会社リコー 結晶成長装置および製造方法
EP1775356A3 (en) 2005-10-14 2009-12-16 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP5053555B2 (ja) * 2006-03-22 2012-10-17 株式会社リコー 結晶製造装置および製造方法
JP4921855B2 (ja) * 2006-06-02 2012-04-25 株式会社リコー 製造方法
JP5129527B2 (ja) 2006-10-02 2013-01-30 株式会社リコー 結晶製造方法及び基板製造方法
JP4932545B2 (ja) 2007-03-06 2012-05-16 株式会社リコー 電子写真感光体およびそれを用いた画像形成方法、画像形成装置並びに画像形成用プロセスカートリッジ
US7718002B2 (en) 2007-03-07 2010-05-18 Ricoh Company, Ltd. Crystal manufacturing apparatus
JP4926996B2 (ja) * 2007-03-13 2012-05-09 豊田合成株式会社 結晶成長装置
JP4702324B2 (ja) * 2007-05-30 2011-06-15 豊田合成株式会社 Ｉｉｉ族窒化物半導体製造装置、およびｉｉｉ族窒化物半導体の製造方法
JP5113097B2 (ja) * 2009-01-23 2013-01-09 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP5644637B2 (ja) * 2011-03-31 2014-12-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
JP5589997B2 (ja) * 2011-09-12 2014-09-17 株式会社リコー 結晶製造装置

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