WO2008023635A1 - SiC À CRISTAL UNIQUE ET SON PROCÉDÉ DE PRODUCTION - Google Patents

SiC À CRISTAL UNIQUE ET SON PROCÉDÉ DE PRODUCTION Download PDF

Info

Publication number
WO2008023635A1
WO2008023635A1 PCT/JP2007/066005 JP2007066005W WO2008023635A1 WO 2008023635 A1 WO2008023635 A1 WO 2008023635A1 JP 2007066005 W JP2007066005 W JP 2007066005W WO 2008023635 A1 WO2008023635 A1 WO 2008023635A1
Authority
WO
WIPO (PCT)
Prior art keywords
sic
single crystal
crystal sic
raw material
particles
Prior art date
Application number
PCT/JP2007/066005
Other languages
English (en)
Japanese (ja)
Inventor
Shoji Akiyama
Masanori Ikari
Takao Abe
Original Assignee
Shin-Etsu Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Chemical Co., Ltd. filed Critical Shin-Etsu Chemical Co., Ltd.
Publication of WO2008023635A1 publication Critical patent/WO2008023635A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types

Definitions

  • the present invention relates to a single crystal SiC used as a semiconductor device material or LED material and a method for manufacturing the same.
  • Single-crystal SiC is useful as a material for harsh environment-resistant devices and power devices because of its large crystal bond energy, large dielectric breakdown electric field, and high thermal conductivity. Its lattice constant force is close to the lattice constant of SGaN, so it is useful as a substrate material for GaN LED.
  • this single crystal SiC is manufactured by using the Rayleigh method in which SiC powder is sublimated in a graphite crucible, and the single crystal SiC is recrystallized on the inner wall of the graphite crucible.
  • An improved Rayleigh method in which the SiC seed single crystal is placed at the part to be recrystallized by optimizing the temperature distribution and epitaxially recrystallized, and the gas source is transported onto the SiC seed single crystal heated by the carrier gas and crystallized.
  • Non-Patent Document 1 CVD method for epitaxial growth while chemically reacting on the surface, sublimation proximity method for epitaxially recrystallizing SiC powder on SiC seed single crystal with SiC powder and SiC seed single crystal in proximity in a graphite crucible (Refer to Chapter 4 of Non-Patent Document 1).
  • each of these single crystal SiC manufacturing methods is considered to have problems.
  • the Rayleigh method can produce single-crystal SiC with good crystallinity, crystal growth is based on spontaneous nucleation, so shape control and crystal surface control are difficult, and large-diameter wafers can be obtained. There is no problem.
  • the improved Rayleigh method can obtain a large-diameter single-crystal SiC ingot at a high speed of several lOO ⁇ m / h, it has a problem that a large number of micropipes are generated in the crystal because it grows in a spiral shape. There is.
  • the CVD method can produce high-quality single crystal SiC with high purity and low defect density, but due to the epitaxial growth with a dilute gas source, the growth rate is slow, about 10 ⁇ m / h. There is a problem that a crystalline SiC ingot cannot be obtained. In the sublimation proximity method, The ability to achieve high-purity SiC epitaxial growth with a relatively simple structure There is a problem that it is impossible to obtain a long single-crystal SiC ingot due to structural constraints.
  • Patent Document 1 Japanese Patent No. 3505597
  • Non-patent document 1 edited by Hiroyuki Matsunami, “Semiconductor SiC technology and application”, Nikkan Kogyo Shimbun (published in the first edition in March 2003)
  • the problem to be solved by the present invention is to provide an improved method for growing single crystal SiC epitaxially stably for a long time and to provide a high-quality single crystal SiC obtained as a result.
  • the method for producing single-crystal SiC according to the present invention includes a susceptor to which an SiC seed crystal is fixed, and a raw material supply pipe for supplying SiO particles and carbon (C) particles, which are raw materials for producing single-crystal SiC, in a crucible. And a step of growing the single crystal SiC by supplying the raw material for producing the single crystal SiC together with an inert carrier gas onto the SiC seed crystal through the raw material supply pipe in the crucible having a high temperature atmosphere.
  • Molar specific force of SiO and C SiO: C 1. 05: 3. 0 2. 0: 3.0.
  • the present inventors deliberately shift the ratio of raw material SiO and C from the stoichiometric molar ratio 13 and actually react with C by supplying excessive SiO. It has been found that the composition ratio of SiO or SiOx can be optimized, and the present invention has been completed. Actually, taking into account the amount of evaporation, the molar ratio of SiO raw material to 1.000 mol of C raw material is set to 1.05-2.00, so that a shortage of SiO does not occur during the reaction. It became possible to grow single crystals stably over a wide range.
  • the inert gas at this time is preferably Ar gas.
  • high-quality single crystal SiC can be stabilized for a long time by supplying SiO in excess of the composition ratio based on the simple stoichiometry in the supply composition of the raw material composed of silica particles and carbon particles.
  • the raw material composed of silica particles and carbon particles.
  • FIG. 1 is a conceptual cross-sectional view showing an example of an apparatus for producing single crystal SiC of the present invention.
  • a mixture of silica particles and carbon black particles mixed so as to be in the above molar ratio range is used.
  • a mixture of solid particles composed of silica particles and carbon particles having a uniform particle diameter can be suitably used.
  • the type, particle size, particle shape, etc. of these silica particles and carbon particles are not particularly limited.
  • high-purity silica obtained by flame hydrolysis method or high-purity carbon black is preferably used. it can.
  • any of the above silica particles and carbon particles may be used in admixture of two or more.
  • the silica particles and carbon particles may be pretreated or other components may be added in small amounts as necessary. These raw materials are mixed so that the molar ratio of SiO: C is 1.05: 3.00 to 2.00: 3.00 and supplied to the seed crystal.
  • the supply of the silica particles and the carbon particles onto the SiC seed single crystal wafer is a method that can be continuously supplied without interruption.
  • a method that can be continuously supplied without interruption Is not particularly limited.
  • a commercially available powder feeder that can transport powder continuously can be used.
  • the supply line of the raw material for producing single crystal SiC and the inside of the single crystal SiC production apparatus have a hermetic structure that is replaced with an inert gas such as argon or helium, preferably with argon gas, in order to prevent oxygen contamination. It is preferable to keep it.
  • the raw materials for producing the single crystal SiC are supplied in a mixed state on the SiC seed single crystal wafer.
  • the raw materials for producing the single crystal SiC may be mixed or supplied separately and mixed on the SiC seed single crystal wafer.
  • doping When doping is performed in single crystal SiC, it may be mixed as a solid source with the raw material for manufacturing single crystal SiC, or the doping component may be used as a gas source in the atmosphere in the single crystal SiC manufacturing apparatus. May be mixed.
  • the SiC seed crystal used in the production method of the present invention is preferably a SiC seed single crystal wafer, and the type, size, and shape of the SiC seed crystal are not particularly limited, and the type, size, and shape of the target single crystal SiC are not particularly limited. Can be selected as appropriate.
  • a SiC seed single crystal wafer obtained by pretreating a SiC single crystal obtained by the modified Rayleigh method if necessary can be suitably used.
  • the seed crystal may be a just substrate or an off-angle substrate.
  • the production temperature of the single crystal SiC is not particularly limited, and can be appropriately set according to the size, shape, type, etc. of the target single crystal SiC, and the preferred production temperature is in the range of 1, 600-2, 400 ° C. For example, this temperature can be measured as the temperature outside the crucible.
  • the configuration of the single crystal SiC manufacturing apparatus used in the method for manufacturing single crystal SiC of the present invention is not particularly limited. That is, seed crystal size, crucible heating method, crucible material, raw material supply method, atmosphere adjustment method, growth pressure, temperature control method, etc., target single crystal SiC size, shape, type, type of raw material for single crystal SiC production It can be appropriately selected according to the amount and the like.
  • PID temperature control technology can be used for temperature measurement and temperature control.
  • the shape of the crucible used in the present invention is not particularly limited as to the outer shape, and can be appropriately selected according to the size and shape of the target single crystal SiC.
  • the material of the crucible is preferably made of graphite in consideration of the operating temperature range.
  • the shape of the susceptor holding the SiC seed single crystal wafer is not particularly limited, and can be appropriately selected according to the size and shape of the target single crystal SiC. However, the material of the susceptor is preferably made of graphite in consideration of the operating temperature range.
  • the shape of the raw material supply pipe for continuously supplying the raw material for producing single crystal SiC is not particularly limited, and can be appropriately selected according to the size and shape of the target single crystal SiC.
  • the material of the supply pipe is preferably made of graphite in consideration of the operating temperature range.
  • FIG. 1 is a conceptual cross-sectional view showing an example of an apparatus for producing the single crystal SiC of the present invention.
  • a high frequency induction furnace 10 is used.
  • a carbon-made cylindrical crucible 2 (diameter: 100 mm, height: 150 mm) is disposed in the water-cooled chamber 1, and a high-frequency induction heating coil 3 is disposed outside the water-cooled chamber 1.
  • a susceptor 5 for holding the SiC seed single crystal wafer 4 is inserted through the upper portion of the cylindrical crucible 2.
  • the susceptor 5 extends to the inside of the cylindrical crucible, and can be rotated about the central axis of the susceptor by a rotation mechanism (not shown).
  • a controllable heat exchanging function is given to the upper end (not shown) of the susceptor, and a heat flow can be generated in the vertical direction (longitudinal direction) of the susceptor. Moreover, the heat flow rate can be adjusted! /.
  • the normal direction of the surface holding the SiC seed single crystal wafer at the lower end of the susceptor can be freely set from approximately parallel to the vertical direction of the susceptor to a maximum inclination of 45 °.
  • a (SiC single crystal) growth layer 9 is grown on the seed crystal 4.
  • a raw material supply pipe 6 for supplying raw material powder particles for producing single crystal SiC is inserted through. Further, the supply pipe 6 is extended outside the high-frequency induction heating furnace in the previous period, and a plurality of raw material storage tanks 7 and 7 ′ whose supply amount can be adjusted independently by the control valves 8 and 8 ′, and the flow rate control. Each is connected to a possible source of inert carrier gas A (not shown).
  • the supplied inert carrier gas A is discharged from a duct (not shown) provided in the chamber 1.
  • Example 1 in which SiO particles and C particles are supplied so as to be within the molar ratio range defined in the present invention.
  • Comparative Example 2 ⁇ .7
  • 2 ⁇ 10: 3.00 SiC was manufactured and the single crystal growth was compared.
  • the SiO particles and C particles may be mixed in advance so as to have a set supply molar ratio, and then supplied from one storage tank to the inside of the cylindrical crucible.
  • SiO particles and C particles are mixed in the inert carrier gas A in the raw material supply pipe and mixed with the cylinder.
  • the ability to continuously supply the material inside the crucible as a raw material for producing single-crystal SiC is S.
  • the high-frequency induction heating furnace can control the pressure by a vacuum exhaust system and a pressure control system (not shown), and includes an inert gas replacement mechanism (not shown).
  • a vacuum exhaust system and a pressure control system not shown
  • an inert gas replacement mechanism not shown.
  • FIG. 1 it is possible to arrange the supply pipe upside down within the range in which the action of the present invention does not change, as the supply pipe is arranged on the lower side of the crucible and the susceptor is arranged on the upper side of the crucible. It is also possible to arrange the supply pipe obliquely or laterally with respect to the susceptor.
  • single crystal SiC was manufactured under the following conditions.
  • An SiC seed single crystal wafer was fixed to the lower end of the susceptor.
  • the SiC seed single crystal wafer used here was single crystal SiC manufactured by the Rayleigh method.
  • Carbon and SiO, which are raw materials for producing single-crystal SiC, were carbon black MA600 manufactured by Mitsubishi Chemical Corporation and Aerosil 380 manufactured by Nippon Aerosil Co., Ltd., respectively.
  • the inside of the high frequency induction heating furnace was replaced with an inert gas (high purity argon).
  • the carbon cylindrical crucible was heated by the high-frequency induction heating coil, and the surface temperature of the SiC seed single crystal wafer was adjusted to be in the range of 1600 to 2400 ° C.
  • the susceptor on which the SiC crystal single crystal wafer was fixed was rotated at a rotation speed of 0 to 20 rpm.
  • the inert carrier gas high purity argon
  • the single crystal SiC production raw material is passed through the raw material supply pipe to the cylinder.
  • Single-crystal SiC was manufactured by continuously supplying the surface of the SiC seed single-crystal wafer disposed in the upper part of the crucible. The production results are summarized in Table 1.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

La présente invention concerne un procédé amélioré pour la croissance épitaxiale stable d'un SiC à cristal unique pendant une période prolongée, ainsi qu'un SiC à cristal unique de grande qualité obtenu en conséquence. L'invention concerne un procédé pour produire un SiC à cristal unique, comprenant les étapes de disposition dans un creuset d'un suscepteur avec un cristal de semence SiC fixé dessus et une conduite d'alimentation des matières premières pour fournir des particules de carbone (C) et des particules de SiO2 comme matières premières pour la production de SiC à cristal unique, ainsi que la fourniture de matières premières pour la production d'un SiC à cristal unique avec un gaz vecteur inerte via la conduite d'alimentation en matières premières sur le cristal de semence SiC dans le creuset avec une atmosphère à température élevée pour atteindre ainsi une croissance d'un SiC à cristal unique, caractérisé en ce que le rapport molaire d'alimentation de SiO2 par rapport à C de la matière première soit tel que SiO2:C = 1,05:3,0 à 2,0:3,0. L'invention concerne également un SiC à cristal unique produit par le procédé.
PCT/JP2007/066005 2006-08-22 2007-08-17 SiC À CRISTAL UNIQUE ET SON PROCÉDÉ DE PRODUCTION WO2008023635A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006224837A JP2008050174A (ja) 2006-08-22 2006-08-22 単結晶ＳｉＣ及びその製造方法
JP2006-224837 2006-08-22

Publications (1)

Publication Number Publication Date
WO2008023635A1 true WO2008023635A1 (fr) 2008-02-28

Family

ID=39106720

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/066005 WO2008023635A1 (fr) 2006-08-22 2007-08-17 SiC À CRISTAL UNIQUE ET SON PROCÉDÉ DE PRODUCTION

Country Status (4)

Country Link
JP (1) JP2008050174A (fr)
KR (1) KR20090042202A (fr)
TW (1) TW200811320A (fr)
WO (1) WO2008023635A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120012343A (ko) * 2010-07-30 2012-02-09 엘지이노텍 주식회사 탄화 규소 및 이의 제조 방법
KR20120012345A (ko) * 2010-07-30 2012-02-09 엘지이노텍 주식회사 탄화 규소 및 이의 제조 방법
WO2013073534A1 (fr) * 2011-11-17 2013-05-23 イビデン株式会社 Procédé de production de monocristaux de carbure de silicium

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62212213A (ja) * 1985-10-23 1987-09-18 Bridgestone Corp β型炭化珪素の製造方法
JPS63147812A (ja) * 1986-12-10 1988-06-20 Nippon Sheet Glass Co Ltd 炭化珪素粉末の製造方法
JPH0380197A (ja) * 1989-08-21 1991-04-04 Showa Denko Kk 半導体ＳｉＣ単結晶の製造法
JP2001233697A (ja) * 2000-02-23 2001-08-28 Nippon Pillar Packing Co Ltd 炭化珪素単結晶
JP2005154247A (ja) * 2003-10-27 2005-06-16 Ngk Insulators Ltd 単結晶炭化珪素の製造方法および単結晶炭化珪素

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62212213A (ja) * 1985-10-23 1987-09-18 Bridgestone Corp β型炭化珪素の製造方法
JPS63147812A (ja) * 1986-12-10 1988-06-20 Nippon Sheet Glass Co Ltd 炭化珪素粉末の製造方法
JPH0380197A (ja) * 1989-08-21 1991-04-04 Showa Denko Kk 半導体ＳｉＣ単結晶の製造法
JP2001233697A (ja) * 2000-02-23 2001-08-28 Nippon Pillar Packing Co Ltd 炭化珪素単結晶
JP2005154247A (ja) * 2003-10-27 2005-06-16 Ngk Insulators Ltd 単結晶炭化珪素の製造方法および単結晶炭化珪素

Also Published As

Publication number Publication date
KR20090042202A (ko) 2009-04-29
TW200811320A (en) 2008-03-01
JP2008050174A (ja) 2008-03-06

Similar Documents

Publication Publication Date Title
JP5093974B2 (ja) 気相成長法による単結晶の製造装置および製造法
JP6606638B2 (ja) Ｆｅ−Ｇａ基合金単結晶の育成方法及び育成装置
EP2630278B1 (fr) Procédé de croissance d'un monocristal de carbure de silicium et dispositif afférent
JPH05208900A (ja) 炭化ケイ素単結晶の成長装置
JP2008001569A (ja) 単結晶ＳｉＣ及びその製造方法並びに単結晶ＳｉＣの製造装置
WO2008023635A1 (fr) SiC À CRISTAL UNIQUE ET SON PROCÉDÉ DE PRODUCTION
JP3505597B2 (ja) 炭化珪素単結晶
JP4505202B2 (ja) 炭化珪素単結晶の製造方法および製造装置
JP4670002B2 (ja) 窒化物単結晶の製造方法
EP1158077A1 (fr) Procede et appareil utiles pour produire un monocristal de carbure de silicium
JP2007145679A (ja) 窒化アルミニウム単結晶の製造装置及びその製造方法
JP2008115045A (ja) 単結晶ＳｉＣ及びその製造方法
WO2008018322A1 (fr) Monocristal de carbure de silicium et son procédé de production
JP4347325B2 (ja) 単結晶ＳｉＣ、その製造方法及び単結晶ＳｉＣの製造装置
JP2008308369A (ja) 単結晶ＳｉＣ、その製造方法及びその製造装置
JP4691815B2 (ja) ＳｉＣ単結晶の製造方法
JP2009057265A (ja) 単結晶ＳｉＣ及びその製造方法
JP2009073696A (ja) 単結晶ＳｉＣ及びその製造方法
WO2008018319A1 (fr) MONOCRISTAL SiC, SON PROCÉDÉ DE FABRICATION, ET MATÉRIEL DE FABRICATION POUR MONOCRISTAL SiC
JP2009023846A (ja) 炭化ケイ素単結晶の製造方法及びその製造装置
JP2011201756A (ja) 単結晶炭化珪素の製造方法
JP2009029664A (ja) 単結晶ＳｉＣ及びその製造方法
JP2008254945A (ja) 単結晶ＳｉＣ及びその製造方法
JP2008273819A (ja) 炭化珪素単結晶の製造方法および該製造方法により得られる炭化珪素単結晶
JP2009057221A (ja) 単結晶炭化珪素及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07805943

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1020087023660

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 07805943

Country of ref document: EP

Kind code of ref document: A1