JP4050028B2 - 面発光型半導体発光素子 - Google Patents

面発光型半導体発光素子 Download PDF

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Publication number
JP4050028B2
JP4050028B2 JP2001302640A JP2001302640A JP4050028B2 JP 4050028 B2 JP4050028 B2 JP 4050028B2 JP 2001302640 A JP2001302640 A JP 2001302640A JP 2001302640 A JP2001302640 A JP 2001302640A JP 4050028 B2 JP4050028 B2 JP 4050028B2
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Prior art keywords
light emitting
semiconductor
region
film
layer
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Expired - Fee Related
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JP2001302640A
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English (en)
Japanese (ja)
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JP2003110196A (ja
JP2003110196A5 (cg-RX-API-DMAC10.html
Inventor
瑞仙 江崎
圭児 高岡
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Toshiba Corp
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Toshiba Corp
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Priority to JP2001302640A priority Critical patent/JP4050028B2/ja
Priority to US10/254,624 priority patent/US6678307B2/en
Publication of JP2003110196A publication Critical patent/JP2003110196A/ja
Publication of JP2003110196A5 publication Critical patent/JP2003110196A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2001302640A 2001-09-28 2001-09-28 面発光型半導体発光素子 Expired - Fee Related JP4050028B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001302640A JP4050028B2 (ja) 2001-09-28 2001-09-28 面発光型半導体発光素子
US10/254,624 US6678307B2 (en) 2001-09-28 2002-09-26 Semiconductor surface light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001302640A JP4050028B2 (ja) 2001-09-28 2001-09-28 面発光型半導体発光素子

Related Child Applications (1)

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JP2007119708A Division JP2007243213A (ja) 2007-04-27 2007-04-27 面発光型半導体発光素子

Publications (3)

Publication Number Publication Date
JP2003110196A JP2003110196A (ja) 2003-04-11
JP2003110196A5 JP2003110196A5 (cg-RX-API-DMAC10.html) 2004-12-16
JP4050028B2 true JP4050028B2 (ja) 2008-02-20

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US (1) US6678307B2 (cg-RX-API-DMAC10.html)
JP (1) JP4050028B2 (cg-RX-API-DMAC10.html)

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JP4537658B2 (ja) * 2002-02-22 2010-09-01 株式会社リコー 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
JP4184769B2 (ja) * 2002-11-26 2008-11-19 株式会社東芝 面発光型半導体レーザ及びその製造方法
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JP4641736B2 (ja) * 2003-10-28 2011-03-02 ソニー株式会社 面発光半導体レーザーとその製造方法及び光学装置
JP4138629B2 (ja) * 2003-11-06 2008-08-27 株式会社東芝 面発光型半導体素子及びその製造方法
CN101471540B (zh) * 2003-12-22 2010-12-22 松下电器产业株式会社 面发光激光器和激光投射装置
CN1315234C (zh) * 2004-02-17 2007-05-09 长春理工大学 垂直腔面发射半导体激光器制作中刻蚀环形分布孔法
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JP4677825B2 (ja) * 2005-05-16 2011-04-27 住友電気工業株式会社 面発光型半導体素子の製造方法及び面発光型半導体素子
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US7952172B2 (en) 2005-12-26 2011-05-31 Nec Corporation Semiconductor optical element
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
WO2007116659A1 (ja) 2006-03-23 2007-10-18 Nec Corporation 面発光レーザ
CN100456584C (zh) * 2006-08-02 2009-01-28 长春理工大学 大出光孔垂直腔面发射半导体激光器的多芯电注入结构
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JP5228363B2 (ja) 2007-04-18 2013-07-03 ソニー株式会社 発光素子
JP5092533B2 (ja) * 2007-05-11 2012-12-05 富士ゼロックス株式会社 面発光型半導体レーザ、光学装置、光照射装置、情報処理装置、光送信装置、光空間伝送装置および光伝送システム
JP4973940B2 (ja) * 2007-10-15 2012-07-11 ソニー株式会社 半導体発光素子の製造方法
JP5100316B2 (ja) * 2007-11-05 2012-12-19 古河電気工業株式会社 面発光型レーザ素子
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JP2010034035A (ja) * 2008-06-27 2010-02-12 Canon Inc 有機ｅｌ表示装置及びその製造方法
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JP6672721B2 (ja) * 2015-11-09 2020-03-25 三菱電機株式会社 半導体レーザーおよびその製造方法
JP7077500B2 (ja) * 2017-01-12 2022-05-31 ローム株式会社 面発光レーザ素子、光学装置
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JP2021022613A (ja) 2019-07-25 2021-02-18 住友電気工業株式会社 面発光レーザおよびその製造方法
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JP7823350B2 (ja) * 2021-09-14 2026-03-04 富士フイルムビジネスイノベーション株式会社 発光装置及び光測定装置
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US6678307B2 (en) 2004-01-13
US20030063649A1 (en) 2003-04-03

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